ISSUES TO ADDRESS - Home | College of Engineering and Computer
Transcript of ISSUES TO ADDRESS - Home | College of Engineering and Computer
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ISSUES TO ADDRESS...
• What types of defects arise in solids?
• Can the number and type of defects be varied
and controlled?
• How do defects affect material properties?
• Are defects desirable or undesirable?
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• Vacancy atoms
• Interstitial atoms
• Substitutional atoms
• Dislocations
• Grain Boundaries
Point defects
Line defects
Area defects
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• Vacancies: -vacant atomic sites in a structure.
Vacancydistortion of planes
• Self-Interstitials: -"extra" atoms positioned between atomic sites.
self-interstitialdistortion
of planes
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Vacancy: Missing Atom
Interstitial: Extra atom inside lattice
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Can be
•Substitutional (occupying lattice site)
•Interstitial
Often depends upon relative sizes
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Point Defects increase randomness in crystals, and therefore, “Entropy”.
To maximize entropy, all crystals will have an equilibrium concentration of point defects for thermodynamic reasons
This concentration can be deduced from thermodynamic principles
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Boltzmann's constant
(1.38 x 10-23 J/atom K)
(8.62 x 10-5 eV/atom K)
ND
Nexp
QD
kT
No. of defects
No. of potential defect sites.
Activation energy
Temperature
Each lattice site is a potential vacancy site
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• We can get Q from
an experiment.
• Measure this... • Replot it...
1/T
N
NDln
1
-QD/k
slope
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3 • Find the equil. # of vacancies in 1m of Cu at 1000C.
• Given:
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• Find the equil. # of vacancies in 1m of Cu at 1000C.
• Given:
3
8.62 x 10-5 eV/atom-K
0.9eV/atom
1273K
ND
Nexp
QD
kT
For 1m3, N =NA
ACu x x 1m3 = 8.0 x 1028 sites
= 2.7 · 10-4
• Answer:
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Two outcomes if impurity (B) added to host (A):
• Solid solution of B in A (i.e., random dist. of point defects)
• Solid solution of B in A plus particles of a new
phase (usually for a larger amount of B)
OR
Substitutional solid soln.
(e.g., Cu in Ni)
Interstitial solid soln.
(e.g., C in Fe)
Second phase particle
-- different composition
-- often different structure.
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Conditions for substitutional solid solution (S.S.)
W. Hume – Rothery rule ◦ 1. r (atomic radius) < 15% ◦ 2. Proximity in periodic table i.e., similar electronegativities
◦ 3. Same crystal structure for pure metals ◦ 4. Valency All else being equal, a metal will have a greater
tendency to dissolve a metal of higher valency than one of lower valency
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Application of Hume–Rothery rules – Solid Solutions
1. Would you predict more Al or Ag to dissolve in Zn?
2. More Zn or Al
in Cu?
Table on p. 118, Callister & Rethwisch 8e.
Element Atomic Crystal Electro- Valence
Radius Structure nega-
(nm) tivity
Cu 0.1278 FCC 1.9 +2
C 0.071
H 0.046
O 0.060
Ag 0.1445 FCC 1.9 +1
Al 0.1431 FCC 1.5 +3
Co 0.1253 HCP 1.8 +2
Cr 0.1249 BCC 1.6 +3
Fe 0.1241 BCC 1.8 +2
Ni 0.1246 FCC 1.8 +2
Pd 0.1376 FCC 2.2 +2
Zn 0.1332 HCP 1.6 +2
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Specification of composition
◦ weight percent
100x 21
11
mm
mC
m1 = mass of component 1
100x 21
1'
1
mm
m
nn
nC
nm1 = number of moles of component 1
– atom percent
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Definition: Amount of impurity (B) and host (A)
in the system.
• Weight %
Two descriptions:
• Atom %
• Conversion between wt % and at% in an A-B alloy:
CB = C'BAB
C'AAA + C'BABx 100
• Basis for conversion:
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A certain mass of alloy contains 33g of Cu and 47g of Zn
Atomic Wt. of Cu is 63.55 and Zn is 65.39
Calculate atomic composition.
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10
nmCu
= m
Cu'
ACu
= 33 g
63.55 g /mol = 0.519 m ol
Likewise, for Zn
nmZn
= 47 g
65.39 g /mol = 0.719 mol
Now, use of Equation (4.5) yields
CCu' =
nm
Cu
nm
Cun
mZn
x 100
= 0.519 mol
0.519 mol 0.719 mol x 100 = 41.9 at%
Also,
CZn' =
0.719 mol
0.519 mol 0.719 mol x 100 = 58.1 at%
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Alloy has 5 at% Cu and 95 at% Pt
Atomic weights are: Cu - 63.55; Pt – 195.08
Calculate wt% of this alloy
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CCu = C
Cu' A
Cu
CCu' A
CuC
Pt' A
Pt
x 100
= (5)(63.55 g /mol)
(5)(63.55 g /mol) (95)(195.08 g /mol) x 100
= 1.68 wt%
CPt = C
Pt' A
Pt
CCu' A
Cu C
Pt' A
Pt
x 100
= (95)(195.08 g /mol)
(5)(63.55 g /mol) (95)(195.08 g /mol) x 100
= 98.32 wt%
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• are line defects,
• cause slip between crystal plane when they move,
• produce permanent (plastic) deformation.
Schematic of a Zinc (HCP):
• before deformation • after tensile elongation
slip steps
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• Dislocations slip planes incrementally... • The dislocation line (the moving red dot)... ...separates slipped material on the left
from unslipped material on the right.
Simulation of dislocation
motion from left to right
as a crystal is sheared.
(Courtesy P.M. Anderson)
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• Dislocation motion requires the successive bumping
of a half plane of atoms (from left to right here). • Bonds across the slipping planes are broken and
remade in succession.
Atomic view of edge
dislocation motion from
left to right as a crystal
is sheared.
(Courtesy P.M. Anderson)
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• Structure: close-packed
planes & directions
are preferred.
view onto two
close-packed
planes.
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Identify the closest packed Plane in FCC How many such planes are there in a given
crystal?
Identify the closest packed direction in FCC How many such directions are on each plane? [These together determine how many “slip
systems” for dislocation to move]
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Identify the closest packed Plane in HCP How many such planes are there in a given
crystal?
Identify the closest packed direction in HCP How many such directions are on each plane?
[How many “slip systems” for dislocation to
move? Compare to FCC]
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• Comparison among crystal structures: FCC: many close-packed planes/directions;
HCP: only one plane, 3 directions;
BCC: none
Mg (HCP)
Al (FCC)
tensile direction
• Results of tensile
testing.
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Grain boundaries: • are boundaries between crystals.
• are produced by the solidification process, for example.
• have a change in crystal orientation across them.
• impede dislocation motion.
grain boundaries
heat flow
Schematic
Adapted from Fig. 4.7, Callister 6e.
~ 8cm Metal Ingot
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Point Defects are very subtle: Properties related to defects (such as electrical conductivity, density, optical properties etc.) need to be monitored.
Line Defects related to ductility and plastic deformation in metals. Directly observable by Transmission Electron Microscopy.
Grain Boundaries easier to observe by optical or scanning electron microscopy (discussed earlier).
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