IR_LED_Xmit-QED233

8/6/2019 IR_LED_Xmit-QED233

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FEATURES

= 940 nm

• Chip material =GaAs with AlGaAs window

• Package type: T-1 3/4 (5mm lens diameter)

• Matched Photosensor: QSD122/123/124

• Medium Emission Angle, 40°

• High Output Power

• Package material and color: Clear, untinted, plastic

• Ideal for remote control applications

ANODE

CATHODE

SCHEMATIC

0.195 (4.95)

0.040 (1.02)NOM

0.100 (2.54)NOM

0.050 (1.25)

0.800 (20.3)MIN

0.305 (7.75)

0.240 (6.10)0.215 (5.45)

0.020 (0.51)

SQ. (2X)

REFERENCE

SURFACE

CATHODE

QED233 QED234

2001 Fairchild Semiconductor CorporationDS300338 10/31/01 1 OF 4 www.fairchildsemi.com

NOTES:

1. Dimensions for all drawings are in inches (mm).2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

DESCRIPTIONThe QED233 / QED234 is a 940 nm GaAs / AlGaAs LED encapsulated in a clear untinted, plastic T-1 3/4 package.

PLASTIC INFRARED

LIGHT EMITTING DIODE

PACKAGE DIMENSIONS



1. Derate power dissipation linearly 2.67 mW/ °C above 25°C.2. RMA flux is recommended.3. Methanol or isopropyl alcohols are recommended as cleaning agents.4. Soldering iron 1/16” (1.6mm) minimum from housing.5. Pulse conditions; tp = 100 µs, T = 10 ms.

PARAMETER TEST CONDITIONS DEVICE SYMBOL MIN TYP MAX UNITS

Peak Emission Wavelength IF = 20 mA ALL PE — 940 — nm

Spectral Bandwidth IF = 20 mA ALL — 50 — nm

Temp. Coefficient of PE IF = 100 mA ALL TC — 0.2 — nm/K

Emission Angle IF = 100 mA ALL 21/ 2 — 40 — Deg.

Forward Voltage IF = 100 mA, tp = 20 ms ALL VF — — 1.6 V

Temp. Coefficient of VF IF = 100 mA ALL TCV — -1.5 — mV/K

Reverse Current VR = 5 V ALL IR — — 10 µA

Radiant Intensity IF = 100 mA, tp = 20 msQED233

IE10 — 50

mW/sr

QED234 27 — —Temp. Coefficient of IE IF = 20 mA ALL TCI — -0.6 — %/K

Rise TimeIF = 100 mA

ALL tr — 1000 —ns

Fall Time ALL tf — 1000 —

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)

Parameter Symbol Rating Unit

Operating Temperature TOPR -40 to +100 °C

Storage Temperature TSTG -40 to +100 °C

Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C

Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C

Continuous Forward Current IF 100 mA

Reverse Voltage VR 5 V

Power Dissipation(1) PD 200 mW

Peak Forward Current IFP 1.5 A

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

QED233 QED234

PLASTIC INFRARED


www.fairchildsemi.com 2 OF 4 10/31/01 DS300338



TYPICAL PERFORMANCE CURVES TBD

QED233 QED234

PLASTIC INFRARED


Fig. 2 Forward Voltage Vs. Ambient TemperatureFig. 1 Normalized Radiant Intensity vs. Forward Current

TA - AMBIENT TEMPERATURE (˚ C)IF - FORWARD CURRENT (mA)

V F - F O R W A R D V O L T A G E ( V )

I e - N O R M A

L I Z E D R A D I A N T I N T E N S I T Y

-40 -20 0 20 40 60 80 1000.0

0.5

1.0

1.5

2.0

IF =100mA

IF =10mA

IF = 50mA

IF =20mA

IF Pulsed

tpw = 100 µs

Duty Cycle = 0.1%

Fig. 4 Radiation DiagramFig. 3 Normalized Radiant Intensity vs. Wavelength

N O R M A L I Z E D I

N T E N S I T Y

λ (nm)

800 850 900 950 1000 1050

0

0.2

0.4

0.6

0.8

1.0

1000 1500100101

0.01

0.1

1

10

I F -

F O R W A R D C U R R E N T ( m

A )

Fig. 5 Forward Current vs. Forward Voltage

VF - FORWARD VOLTAGE (V)

1 2 3 4

1

10

100

1000TA = 25˚C

Normalized to:

IF = 100 mA

TA = 25˚C

tpw = 100 µs

0.0 0.2 0.4 0.6 0.8 1.00.00.20.40.60.81.0

0

10

20

30

40

50

60

708090100

110

120

130

140

150

160

170

180

DS300338 10/31/01 3 OF 4 www.fairchildsemi.com



DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICETO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT

ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgicalimplant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properlyused in accordance with instructions for use provided

in labeling, can be reasonably expected to result in asignificant injury of the user.

2. A critical component in any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life

support device or system, or to affect its safety oreffectiveness.

www.fairchildsemi.com 4 OF 4 10/31/01 DS300338

QED233 QED234

PLASTIC INFRARED


IR_LED_Xmit-QED233

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