IRHLUC7670Z4 RADIATION HARDENED 60V, · PDF fileIRHLUC7670Z4, 2N7632UC Pre-Irradiation 2 For...
Transcript of IRHLUC7670Z4 RADIATION HARDENED 60V, · PDF fileIRHLUC7670Z4, 2N7632UC Pre-Irradiation 2 For...
Absolute Maximum Ratings (Per Die)Parameter N-Channel P-Channel Units
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current 0.89 -0.65
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current 0.56 -0.41
IDM Pulsed Drain Current 3.56 -2.6
PD @ TC = 25°C Max. Power Dissipation 1.0 1.0 W
Linear Derating Factor 0.01 0.01 W/°C
VGS Gate-to-Source Voltage ±10 ±10 V
EAS Single Pulse Avalanche Energy 20 34 mJ
IAR Avalanche Current 0.89 -0.65 A
EAR Repetitive Avalanche Energy 0.1 0.1 mJ
dv/dt Peak Diode Recovery dv/dt 4.7 -5.6 V/nsTJ Operating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)Weight 0.2 (Typical) g
Pre-Irradiation
°C
A
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6)
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LCC-6
IRHLUC7670Z4 60V, Combination 1N-1P-CHANNEL
TECHNOLOGY
Features:5V CMOS and TTL Compatible Low RDS(on)
Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
2N7632UC
Product SummaryPart Number Radiation Level RDS(on) ID CHANNEL
0.75Ω 0.89A N1.60Ω -0.65A P 0.75Ω 0.89A N1.60Ω -0.65A P
IRHLUC7670Z4
IRHLUC7630Z4
100K Rads (Si)
300K Rads (Si)
PD-97268A
International Rectifier’s R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS and TTL controlcircuits to power devices in space and other radiationenvironments.The threshold voltage remains withinacceptable operating limits over the full operatingtemperature and post radiation.This is achieved whilemaintaining single event gate rupture and single eventburnout immunity.
The device is ideal when used to interface directly with mostlogic gates, linear IC’s, micro-controllers, and other devicetypes that operate from a 3.3-5V source. It may also beused to increase the output current of a PWM, voltagecomparator or an operational amplifier where the logic leveldrive signal is available.
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For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per N Channel Die)Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — 0.89ISM Pulse Source Current (Body Diode) — — 3.56VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 0.89A, VGS = 0V trr Reverse Recovery Time — — 65 ns Tj = 25°C, IF = 0.89A, di/dt ≤ 100A/µsQRR Reverse Recovery Charge — — 67 nC VDD ≤ 25V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Thermal Resistance (Per N Channel Die)Parameter Min Typ Max Units Test Conditions
RthJA Junction-to-Ambient — — 125 °C/W
Electrical Characteristics For N-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 250µA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.07 — V/°C Reference to 25°C, ID = 1.0mAVoltage
RDS(on) Static Drain-to-Source On-State — — 0.75 Ω VGS = 4.5V, ID = 0.56AResistance
VGS(th) Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -4.5 — mV/°C gfs Forward Transconductance 0.25 — — S VDS = 10V, IDS = 0.56A
IDSS Zero Gate Voltage Drain Current — — 1.0 VDS= 48V ,VGS= 0V— — 10 VDS = 48V,
VGS = 0V, TJ =125°CIGSS Gate-to-Source Leakage Forward — — 100 VGS = 10VIGSS Gate-to-Source Leakage Reverse — — -100 VGS = -10VQg Total Gate Charge — — 3.6 VGS = 4.5V, ID = 0.89AQgs Gate-to-Source Charge — — 1.5 nC VDS = 30VQgd Gate-to-Drain (‘Miller’) Charge — — 1.8td(on) Turn-On Delay Time — — 8.0 VDD = 30V, ID = 0.89A,tr Rise Time — — 15 VGS = 5.0V, RG = 24Ωtd(off) Turn-Off Delay Time — — 30tf Fall Time — — 12LS + LD Total Inductance — 33 —
Ciss Input Capacitance — 145 — VGS = 0V, VDS = 25VCoss Output Capacitance — 43 — pF f = 1.0MHzCrss Reverse Transfer Capacitance — 2.5 —
nA
nH
ns
µA
Rg Gate Resistance — 8.2 — Ω f = 1.0MHz, open drain
Measured from the center of drain pad to center of source pad
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Pre-Irradiation IRHLUC7670Z4, 2N7632UC
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per P Channel Die)Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — -0.65ISM Pulse Source Current (Body Diode) — — -2.6VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -0.65A, VGS = 0V trr Reverse Recovery Time — — 35 ns Tj = 25°C, IF = -0.65A, di/dt ≤ -100A/µsQRR Reverse Recovery Charge — — 9.8 nC VDD ≤ -25V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance (Per P Channel Die)Parameter Min Typ Max Units Test Conditions
RthJA Junction-to-Ambient — — 125 °C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Electrical Characteristics For P-Channel Die @Tj = 25°C (Unless Otherwise specified)
Parameter Min Typ Max Units Test ConditionsBVDSS Drain-to-Source Breakdown Voltage -60 — — V VGS = 0V, ID = -250µA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.06 — V/°C Reference to 25°C, ID = -1.0mAVoltage
RDS(on) Static Drain-to-Source On-State — — 1.60 Ω VGS = -4.5V, ID = -0.41AResistance
VGS(th) Gate Threshold Voltage -1.0 — -2.0 V VDS = VGS, ID = -250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — 3.6 — mV/°C gfs Forward Transconductance 0.5 — — S VDS = -10V, IDS = -0.41A
IDSS Zero Gate Voltage Drain Current — — -1.0 VDS= -48V ,VGS= 0V— — -10 VDS = -48V,
VGS = 0V, TJ =125°CIGSS Gate-to-Source Leakage Forward — — -100 VGS = -10VIGSS Gate-to-Source Leakage Reverse — — 100 VGS = 10VQg Total Gate Charge — — 3.6 VGS = -4.5V, ID = -0.65AQgs Gate-to-Source Charge — — 1.5 nC VDS = -30VQgd Gate-to-Drain (‘Miller’) Charge — — 1.8td(on) Turn-On Delay Time — — 23 VDD = -30V, ID = -0.65A,tr Rise Time — — 22 VGS = -5.0V, RG = 24Ωtd(off) Turn-Off Delay Time — — 32tf Fall Time — — 26LS + LD Total Inductance — 33 —
Ciss Input Capacitance — 147 — VGS = 0V, VDS = -25VCoss Output Capacitance — 46 — pF f = 1.0MHzCrss Reverse Transfer Capacitance — 8.1 —
nA
nH
ns
µA
Rg Gate Resistance — 52 — Ω f = 1.0MHz, open drain
Measured from the center of drain pad to center of source pad
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International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.The hardness assurance program at International Rectifier is comprised of two radiation environments.Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Bothpre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment forSingle Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Radiation Characteristics
Fig a. Typical Single Event Effect, Safe Operating Area
Table 1. Electrical Characteristics For N-Channel Device @Tj = 25°C, Post Total Dose Irradiation
Parameter Upto 300K Rads (Si)1 Units Test ConditionsMin Max
BVDSS Drain-to-Source Breakdown Voltage 60 — V VGS = 0V, ID = 250µAVGS(th) Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µAIGSS Gate-to-Source Leakage Forward — 100 nA VGS = 10VIGSS Gate-to-Source Leakage Reverse — -100 VGS = -10VIDSS Zero Gate Voltage Drain Current — 1.0 µA VDS= 48V, VGS= 0VRDS(on) Static Drain-to-Source
On-State Resistance (TO-39) — 0.60 Ω VGS = 4.5V, ID = 0.56ARDS(on) Static Drain-to-Source On-state
VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 0.89A
Resistance (LCC-6) — 0.75 Ω VGS = 4.5V, ID = 0.56A
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
Table 2. Typical Single Event Effect Safe Operating AreaLET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V
38 ± 5% 300 ± 7.5% 38 ± 7.5% 60 60 60 60 60 35
62 ± 5% 355 ± 7.5% 33 ± 7.5% 60 60 60 60 30 -
85 ± 5% 380 ± 7.5% 29 ± 7.5% 60 60 60 40 - -
010203040506070
-7-6-5-4-3-2-10
VGS
VD
S
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
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Pre-Irradiation IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.The hardness assurance program at International Rectifier is comprised of two radiation environments.Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Bothpre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Typical Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment forSingle Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation
Parameter Upto 300K Rads (Si)1 Units Test ConditionsMin Max
BVDSS Drain-to-Source Breakdown Voltage -60 — V VGS = 0V, ID = -250µAVGS(th) Gate Threshold Voltage -1.0 -2.0 VGS = VDS, ID = -250µAIGSS Gate-to-Source Leakage Forward — -100 nA VGS = -10VIGSS Gate-to-Source Leakage Reverse — 100 VGS = 10VIDSS Zero Gate Voltage Drain Current — -1.0 µA VDS= -48V, VGS= 0VRDS(on) Static Drain-to-Source
On-State Resistance (TO-39) — 1.40 Ω VGS = -4.5V, ID = -0.41ARDS(on) Static Drain-to-Source On-state
VSD Diode Forward Voltage — -5.0 V VGS = 0V, ID = -0.65A
Resistance (LCC-6) — 1.60 Ω VGS = -4.5V, ID = -0.41A
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
Table 2. Typical Single Event Effect Safe Operating AreaLET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V 2V 4V 5V 6V 7V
38 ± 5% 300 ± 7.5% 38 ± 7.5% -60 -60 -60 -60 -60 -50
62 ± 5% 355 ± 7.5% 33 ± 7.5% -60 -60 -60 -60 -60 -
85 ± 5% 380 ± 7.5% 29 ± 7.5% -60 -60 -60 -60 - -
-70-60-50-40-30-20-10
00 1 2 3 4 5 6 7
Bias VGS (V)
Bia
s V
DS
(V
)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
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N-Channel Die 1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
I D,
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
60µs PULSE WIDTH Tj = 25°C
VGSTOP 10V 7.0V 5.0V 4.0V 3.5V 3.0V 2.75VBOTTOM 2.5V
2.5V
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
0.1
1
10
I D,
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
60µs PULSE WIDTH Tj = 150°C
2.5V
VGSTOP 10V 7.0V 5.0V 4.0V 3.5V 3.0V 2.75VBOTTOM 2.5V
2 2.5 3 3.5 4 4.5 5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
I D, D
rain
-to-
Sou
rce
Cur
rent
(A
)
VDS = 25V
60µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
RD
S(o
n) ,
Dra
in-t
o-S
ourc
e O
n R
esis
tanc
e
(
Nor
mal
ized
)
VGS = 4.5V
ID = 0.89A
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Pre-Irradiation IRHLUC7670Z4, 2N7632UC
Fig 5. Typical On-Resistance VsGate Voltage
Fig 6. Typical On-Resistance VsDrain Current
Fig 7. Typical Drain-to-SourceBreakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage VsTemperature
0 0.5 1.0 1.5 2.0 2.5 3.0
ID, Drain Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RD
S(o
n),
Dra
in-t
o -S
ourc
e O
n R
esis
tanc
e (Ω
)
TJ = 25°C
TJ = 150°C
Vgs = 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
55
65
75
V(B
R)D
SS
, Dra
in-t
o-S
ourc
e B
reak
dow
n V
olta
ge (
V)
ID = 1.0mA
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VG
S(t
h) G
ate
thre
shol
d V
olta
ge (
V)
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
RD
S(o
n),
Dra
in-t
o -S
ourc
e O
n R
esis
tanc
e (
Ω)
ID = 0.89A
TJ = 25°C
TJ = 150°C
N-Channel Die 1
IRHLUC7670Z4, 2N7632UC Pre-Irradiation
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!
!
N-Channel Die 1
1 10 100
VDS, Drain-to-Source Voltage (V)
0
40
80
120
160
200
240
280
C, C
apac
itanc
e (p
F)
VGS = 0V, f = 1 MHzCiss = Cgs + Cgd, C ds SHORTED
Crss = Cgd Coss = Cds + Cgd
Coss
Crss
Ciss
0 0.5 1.0 1.5 2.0 2.5
VSD , Source-to-Drain Voltage (V)
0.01
0.1
1
10
I SD
, R
ever
se D
rain
Cur
rent
(A
)
VGS = 0V
TJ = 150°C
TJ = 25°C
Fig 11. Typical Source-to-Drain DiodeForward Voltage
0 0.5 1 1.5 2 2.5 3 3.5 4
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
S, G
ate-
to-S
ourc
e V
olta
ge (
V)
VDS = 48V
VDS = 30V
VDS = 12V
ID = 0.89A
FOR TEST CIRCUIT SEE FIGURE 17
25 50 75 100 125 150
TC , Case Temperature (°C)
0
0.2
0.4
0.6
0.8
1.0
I D,
Dra
in C
urre
nt (
A)
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Pre-Irradiation IRHLUC7670Z4, 2N7632UC
"# $ %& '(
N-Channel Die 1
1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
The
rmal
Res
pons
e (
Z th
JA )
0.20
0.10
D = 0.50
0.020.01
0.05 SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
! ' '# "
P
t
t
DM
1
2
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
I D,
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
Tc = 25°CTj = 150°CSingle Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED BY RDS(on)
100µs
DC
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
8
16
24
32
40
48
EA
S ,
Sin
gle
Pul
se A
vala
nche
Ene
rgy
(mJ) ID
TOP 0.40A 0.56ABOTTOM 0.89A
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N-Channel Die 1
Fig 16a. Unclamped Inductive Test Circuit
RG
IAS
0.01Ωtp
D.U.T
LVDS
+- VDD
DRIVER
A
15V
20V
VGS
Fig 16b. Unclamped Inductive Waveforms
tp
V(BR)DSS
IAS
QG
QGS QGD
VG
Charge
D.U.T.VDS
IDIG
3mA
VGS
.3µF
50KΩ
.2µF12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+
-
)*
Fig 17b. Gate Charge Test CircuitFig 17a. Basic Gate Charge Waveform
VDS
90%
10%VGS
td(on) tr td(off) tf
Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
≤ 1 ≤ 0.1 %
++-
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Pre-Irradiation IRHLUC7670Z4, 2N7632UC
P-Channel Die 2
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
-ID
, D
rain
-to-
Sou
rce
Cur
rent
(A
)
60µs PULSE WIDTH Tj = 25°C
VGSTOP -10V -5.0V -4.0V -3.5V -3.0V -2.5V -2.25VBOTTOM -2..0V
-2.0V
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
0.1
1
10
-ID
, D
rain
-to-
Sou
rce
Cur
rent
(A
)60µs PULSE WIDTH Tj = 150°C
VGSTOP -10V -5.0V -4.0V -3.5V -3.0V -2.5V -2.25VBOTTOM -2..0V
-2.0V
2 2.5 3 3.5 4 4.5
-VGS, Gate-to-Source Voltage (V)
0.1
1
10
-ID
, Dra
in-t
o-S
ourc
e C
urre
nt (
Α)
VDS = -25V
60µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RD
S(o
n) ,
Dra
in-t
o-S
ourc
e O
n R
esis
tanc
e
(
Nor
mal
ized
)
VGS = -4.5V
ID = -0.65A
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-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
-VG
S(t
h) G
ate
thre
shol
d V
olta
ge (
V)
ID = -50µA
ID = -250µA
ID = -1.0mA
ID = -150mA
P-Channel Die 2
Fig 23. Typical On-Resistance VsGate Voltage
Fig 24. Typical On-Resistance VsDrain Current
Fig 25. Typical Drain-to-SourceBreakdown Voltage Vs Temperature
Fig 26. Typical Threshold Voltage VsTemperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
50
60
70
80
-V(B
R)D
SS
, Dra
in-t
o-S
ourc
e B
reak
dow
n V
olta
ge (
V)
ID = -1.0mA
0 0.5 1.0 1.5 2.0 2.5 3.0
-ID, Drain Current (A)
0.8
1.2
1.6
2.0
2.4
2.8
3.2
RD
S(o
n),
Dra
in-t
o -S
ourc
e O
n R
esis
tanc
e (Ω
)TJ = 25°C
TJ = 150°C
Vgs = -4.5V
2 3 4 5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
RD
S(o
n),
Dra
in-t
o -S
ourc
e O
n R
esis
tanc
e (
Ω)
ID = -0.65A
TJ = 25°C
TJ = 150°C
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Pre-Irradiation IRHLUC7670Z4, 2N7632UC
!
!
P-ChannelDie 2
1 10 100
-VDS, Drain-to-Source Voltage (V)
0
40
80
120
160
200
240
C, C
apac
itanc
e (p
F)
VGS = 0V, f = 1 MHzCiss = Cgs + Cgd, C ds SHORTED
Crss = Cgd Coss = Cds + Cgd
Coss
Crss
Ciss
! ,-
25 50 75 100 125 150
TC , Case Temperature (°C)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-ID
, D
rain
Cur
rent
(A
)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5.0
-VSD , Source-to-Drain Voltage (V)
0.01
0.1
1
10
-IS
D,
Rev
erse
Dra
in C
urre
nt (
A)
VGS = 0V
TJ = 150°C
TJ = 25°C
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
-VG
S, G
ate-
to-S
ourc
e V
olta
ge (
V)
VDS= -48V
VDS= -30V
VDS= -12V
ID = -0.65A
FOR TEST CIRCUIT SEE FIGURE 35
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'# "
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P-Channel Die 2
! '
1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
The
rmal
Res
pons
e (
Z th
JA )
0.20
0.10
D = 0.50
0.020.01
0.05 SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
EA
S ,
Sin
gle
Pul
se A
vala
nche
Ene
rgy
(mJ) ID
TOP -0.29A -0.41ABOTTOM -0.65A
P
t
t
DM
1
2
1 10 100
-VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
-ID
, D
rain
-to-
Sou
rce
Cur
rent
(A
)
Tc = 25°CTj = 150°CSingle Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED BY RDS(on)
DC
www.irf.com 15
Pre-Irradiation IRHLUC7670Z4, 2N7632UC
P-Channel Die 2
+ $ #.#+ $ #
tp
V(BR)DSS
IAS
RG
IAS
0.01Ωtp
D.U.T
LVDS
VDD
DRIVERA
15V
-20V
VGS
/ .#
D.U.T.VDS
IDIG
-3mA
VGS
.3µF
50KΩ
.2µF12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+
-
QG
QGS QGD
VG
Charge
)*
VDS
90%
10%
VGS
td(on) tr td(off) tf
≤ 1
≤ 0.1 %
+-
VGS
!- !- .#
IRHLUC7670Z4, 2N7632UC Pre-Irradiation
16 www.irf.com
Total Dose Irradiation with VGS Bias.10 volt VGS applied and VDS = 0 duringirradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition AVDD = -25V, starting TJ = 25°C, L= 161mH,
Peak IL = -0.65A, VGS = -10V
ISD ≤ -0.65A, di/dt ≤ -150A/µs,VDD ≤ -60V, TJ ≤ 150°C
Repetitive Rating; Pulse width limited bymaximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 50.4mH,Peak IL = 0.89A, VGS = 10V
ISD ≤ 0.89A, di/dt ≤ 200A/µs,VDD ≤ 60V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — LCC-6
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2010
±
±
3. CONTROLLING DIMENSION: INCH.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].1. OUTLINE CONFORMS TO MIL-PRF-19500/255L
NOTES: DIE 1 ( N Ch ) DIE 2 ( P Ch )
PIN NAME PIN # PIN NAME PIN #DRAIN - 1 DRAIN - 4GATE - 2 GATE - 5SOURCE - 6 SOURCE - 3
0.170
0.245 0.080MAX.
3
5
4
2
6
1PIN 1 PIN 1
0.025
0.0900.065± 0.008
0.1000.050
± 0.010
± 0.010