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IRF9530NHEXFETPower MOSFET

PD - 91482C

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.

Parameter Max. Units

ID @ TC = 25C Continuous Drain Current, VGS @ -10V -14

ID @ TC = 100C Continuous Drain Current, VGS @ -10V -10 A

IDM Pulsed Drain Current -56

PD @TC = 25C Power Dissipation 79 W

Linear Derating Factor 0.53 W/C

VGS Gate-to-Source Voltage 20 V

EAS Single Pulse Avalanche Energy 250 mJ

IAR Avalanche Current -8.4 A

EAR Repetitive Avalanche Energy 7.9 mJ

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJ Operating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C

Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

Absolute Maximum Ratings

Parameter Typ. Max. Units

RJC Junction-to-Case 1.9

RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W

RJA Junction-to-Ambient 62

Thermal Resistance

VDSS = -100V

RDS(on) = 0.20

ID = -14A

TO-220AB

l Advanced Process Technologyl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switchingl P-Channell Fully Avalanche Rated

Description

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Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current MOSFET symbol

(Body Diode)

showing the

ISM Pulsed Source Current integral reverse

(Body Diode)

p-n junction diode.

VSD Diode Forward Voltage -1.6 V TJ = 25C, IS = -8.4A, VGS = 0V

trr Reverse Recovery Time 130 190 ns TJ = 25C, IF = -8.4A

Qrr Reverse RecoveryCharge 650 970 nC di/dt = -100A/s

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -100 V VGS = 0V, ID = -250A

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.11 V/C Reference to 25C, ID = -1mA

RDS(on) Static Drain-to-Source On-Resistance 0.20 VGS = -10V, ID = -8.4A

VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250A

gfs Forward Transconductance 3.2 S VDS = -50V, ID = -8.4A

-25A

VDS = -100V, VGS = 0V

-250 VDS = -80V, VGS = 0V, TJ = 150C

Gate-to-Source Forward Leakage 100 VGS = 20V

Gate-to-Source Reverse Leakage -100nA

VGS = -20V

Qg Total Gate Charge 58 ID = -8.4A

Qgs Gate-to-Source Charge 8.3 nC VDS = -80V

Qgd Gate-to-Drain ("Miller") Charge 32 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time 15 VDD = -50V

tr Rise Time 58 ID = -8.4A

td(off) Turn-Off Delay Time 45 RG = 9.1

tf Fall Time 46 RD = 6.2, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance 760 VGS = 0V

Coss Output Capacitance 260 pF VDS = -25V

Crss Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ TJ = 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 ) ISD -8.4A, di/dt -490A/s, VDD V(BR)DSS,

TJ 175C

Notes:

Starting TJ = 25C, L = 7.0mH

RG = 25, IAS = -8.4A. (See Figure 12)

Pulse width 300s; duty cycle 2%.

-14

-56

A

S

D

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S

D

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Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0. 1

1

10

10 0

0.1 1 10 10 0

D

DS

2 0 s P U L S E W I D TH T = 25Cc A

-I

,D

rain-to-S

ource

C

urrent(A)

-V , Drain-to-Source Vol tage (V)

VGS

TOP - 15V

- 10V- 8.0V

- 7.0V- 6.0V

- 5.5V- 5.0V

BOTTOM - 4.5V

-4.5V

0. 1

1

10

10 0

0.1 1 10 100

D

D S

A

-I

,Drain-to-Source

Current(A)

-V , Dra in - to-Source Vo l tage (V)

VGS

TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

-4 .5V

2 0 s P U L S E W I D T HT = 175 CC

0. 1

1

10

10 0

4 5 6 7 8 9 10

T = 25CJ

G S

D

A

-I

,D

rain-to-Source

C

urrent(A)

-V , Gate- to-Source Vol tage (V)

V = -50V2 0 s P U L S E WID TH

T = 175C

DS

J

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R

,Drain-to-SourceOnResistanc

e

(Normalized)

J

DS(on)

V =

I =

GS

D

-10V

-14A

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Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

VDS

-10V

Pulse Width 1 sDuty Factor 0.1 %

RD

VGS

VDD

RG

D.U.T.

+

-

VDS

90%

10%

VGS

td(on) tr td(off) tf

25 50 75 100 125 150 1750

2

4

6

8

10

12

14

T , Case Temperature ( C)

-I

,DrainCurrent(A)

C

D

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

ThermalResponse

(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

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Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

QG

QGS QGD

VG

Charge

-10V

D.U.T.VDS

IDIG

-3mA

VGS

.3F

50K

.2F12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (BR)DSS

IA S

R G

IA S

0 . 01tp

D . U . T

LV D S

VD D

D R I V E RA

15 V

-20V

25 50 75 100 125 150 1750

100

200

300

400

500

600

700

Starting T , Junction Temperature ( C)

E

,SinglePulseAvalancheEnergy(mJ)

J

AS

IDTOP

BOTTOM

-3.4A-5.9A-8.4A

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Peak Diode Recovery dv/dt Test Circuit

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward Drop

Re-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =P.W.

Period

+

-

+

+

+-

-

-

RGVDD

dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations

Low Stray Inductance Ground Plane Low Leakage Inductance

Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For P-Channel HEXFETS

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L EAD ASSIGN MEN TS

1 - GATE

2 - DRAIN

3 - SOU R C E

4 - DRAIN

- B -

1 .32 ( .052)1.22 ( .048)

3X0.55 ( .022)0.46 ( .018)

2.92 ( .115)2.64 ( .104)

4.69 ( .185)4.20 ( .165)

3X0.93 ( .037)0.69 ( .027)

4.06 ( .160)3.55 ( .140)

1.15 ( .045)M IN

6.47 ( .255)6.10 ( .240)

3.78 ( .149)3.54 ( .139)

- A -

10.54 ( .415)10.29 ( .405)2.87 ( .113)

2.62 ( .103)

15.24 ( .600)14.84 ( .584)

14.09 ( .555)13.47 ( .530)

3X1.40 ( .055)1.15 ( .045)

2.54 ( .100)

2X

0.36 ( .014) M B A M

4

1 2 3

N O T E S :

1 D IMEN SION IN G & TOL ER AN C IN G PER AN SI Y1 4 .5 M, 1 9 8 2 . 3 OU TL IN E C ON FOR M S TO JED EC OU TL IN E TO-2 2 0 AB.

2 C ON TR OL L IN G D IMEN SION : IN C H 4 H EATSIN K & L EAD MEASU R E MEN TS D O N OT IN C L U D E BU R R S.

P A R T N U M B E RI N T E R N A T I O N A L

RECTIF IER

L O G O

EXAMP L E : THIS IS AN IRF1 0 1 0W I T H A S S E M B L Y

L O T C O D E 9 B 1 M

A S S E M B L Y

L O T C O D E

D A T E C O D E

( Y Y W W )

Y Y = Y E A R

W W = W E E K

9 2 4 6

IRF1 0 1 0

9 B 1 M

A

Part Marking InformationTO-220AB

Package OutlineTO-220AB OutlineDimensions are shown in millimeters (inches)

P A R T N U M B E RI N T E R N A T I O N A L

RECTIF IER

L O G O

EXAMP L E : THIS IS AN IRF1 0 1 0W I T H A S S E M B L YL O T C O D E 9 B 1 M

A S S E M B L Y

L O T C O D E

D A T E C O D E

( Y Y W W )

Y Y = Y E A R

W W = W E E K

9 2 4 6

IRF1 0 1 0

9 B 1 M

A

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371http://www.irf.com/ Data and specif icat ions subject to change without notice. 5/98

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