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PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM

ON SILICON MATERIALS SCIENCE AND TECHNOLOGY

SEMICONDUCTOR SILICON/1994

Editors

H.R. Huff

SEMATECH

Austin, Texas

W. BergholzSiemens AG Components Division

Regemsburg, Germany

K. Sumino

Tohoku UniversitySendai, Japan

ELECTRONICS DIVISION

Proceedings Volume 94-10

THE ELECTROCHEMICAL SOCIETY, INC.,

10 South Main St., Pennington, NJ 08534-2896

CONTENTS

PREFACE iii

PART 1 - - ULSI OVERVIEW

CHAPTER 1 - - ULSI OVERVIEW 1

INVITED: OVERVIEW OP ULSI TRENDS

P. Chatterjee and G. Larrabee 3

INVITED: OVERVIEW OF ULSI TRENDS IN JAPAN

E. Takeda 20

INVITED: DEEP LEVELS IN SILICON AND SILICON-

GERMANIUM ALLOYS

H. G. Grimmeiss and M. Kleverman 37

PART II - - SILICON PROCESS

CHAPTER 2 - - SILICON CRYSTAL GROWTH 53

INTRODUCTORY REMARKS - SILICON CRYSTAL GROWTH

S. Takasu and W. Zulehner 55

INVITED: DOUBLE LAYERED CZ (DLCZ) SILICON

CRYSTAL GROWTH

S. Kobayashi, H. Fujiwara, T. Fujiwara,T. Kubo, S. Inami, M. Olcui, S. Miyahara,

Y. Akashi, K. Kuramochi, Y. Tsujimotoand S. Okamoto 58

DENSITY VARIATION OF MOLTEN SILICON AND INFLUENCE

ON CRYSTAL PERFECTION

H. Sasaki, K. Terashima, E. Tokizaki

and S. Kimura 70

k-E HYDUODYMVMIC INTEGRATED THERMAL-CAPILLARY

MODEL FOR PREDICTING TEMPERATURE FIELD AND DOPANT

CONCENTRATION IN CZOCHRALSKI GROWTH OF SILICON

T. K. Kinney, D. E. Bornside, W. Zhou,R. A. Brown and K. M. Kim 80

si

INFLUENCE OF THE ROTATION IN THE CZ FURNACE UPON

THE OXYGEN CONCENTRATION IN THE Si CRYSTAL

S. Togawa, A. Yokotani, S. Kimura,

Y. Shiraishi and M. Imai 90

INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON

THE MINORITY CARRIER RECOMBINATION LIFETIME OF

CZOCHRALSKI SILICON CRYSTALS

G. Borionetti, M. Porrini, P. Geranzani,

R. Orizio and R. Falster 104

SILICON FLOATING ZONE PROCESS: NUMERICAL MODELLING

OF RF FIELD, HEAT TRANSFER, THERMAL STRESS

AND EXPERIMENTAL PROOF FOR 4" CRYSTALS

H. Riemann, A. Ltldge, K. Bottcher, H-J. Rost,

B. Hallmann, W. Schrfider, W. Hensel

and B. Schleusener 111

EVALUATION OF FPDS AND COPS IN SILICON

SINGLE-CRYSTALS

H. Yamagishi, I. Fusegawa, K. Takano,

E. lino, N. Fujimaki, T. Ohta

and M. Sakurada 124

GATE OXIDE RELATED BULK PROPERTIES OF

OXYGEN DOPED FLOATING ZONE AND

CZOCHRALSKI SILICON

W. v. Ammon, A. Ehlert, U. Lambert,

D. Graf, M. Brohl and P. Wagner 136

FORMATION OF INTERSTITIAL OXYGEN STRIAT10NS IN

CZ GROWN SILICON SINGLE CRYSTALS

E. lino, K. Takano, I. Fusegawa and H. Yamagishi 148

OXYGEN PRECIPITATION BEHAVIOR IN SILICON DURING

CZOCHRALSKI CRYSTAL GROWTH

M. Hourai, T. Nagashima, E. Kajita, S. Miki,

S. Sumita, M. Sano and T. Shigematsu 156

DISTRIBUTION OF AS-GROWN DEFECTS IN A SILICON

SINGLE CRYSTAL

K. Nakajima, J. Furukawa, H. Furuyaand T. Shingyouji 168

THE GROWTH OF SILICON SINGLE CRYSTALS BY THE

MAGNECTIC FIELD APPLIED CONTINUOUS CZ (CMCZ)METHOD

Y. Arai, M. Kida, N. Ono, K. Abe, N. Machida,H. Furuya and K. Sahira 180

INVITED:

INVITED:

xU

CHAPTER 3 -- WAFER PREPARATION 193

INTRODUCTORY REMARKS - WAFER PREPARATION

R. Takiguichi and P. 0. Hahn 195

INVITED: MANUFACTURING PROCESSES FOR ADVANCEDSILICON ULSI WAFERS

E. Steffen, J. Schandl, H. Lundt

and J. Junge 197

INVITED: THE DUCTILE MODE GRINDING TECHNOLOGY

APPLIED TO SILICON WAFERING PROCESS

T. Abe, Y. Nakazato, M. Dalto,A. Kanai and M. Miyashita 207

SUBSURFACE DAMAGE OF ABRADED SILICON WAFERS

H. Lundt, M. Kerstan, A. Huber and P. 0. Hahn 218

PERFECT SILICON SURFACE BY HYDROGEN-ANNEALING

H. Kubota, M. Numano, T. Amai, M. Miyashita,S. Samata and Y. Matsushita 225

SURFACE CHARACTERIZATION OF HEAT TREATED SILICON

WAFERS

D. M. Lee, D. Ruprecht, D. Hymes and W. Huber 237

STUDY OF TRANSITION METAL CONTAMINATION CAUSED

BY SC-1 TREATMENT USING TRXRF

Y. Mori, K. Uemura, K. Shimanoe and T. Sakon 248

CHAPTER 4 -- THIN FILMS, INTERFACES AND EPITAXY 261

INTRODUCTORY REMARKS -- THIN FILMS, INTERFACES

AND EPITAXY

T- 0. Sedgwickand J. 0. Borland 2 63

INVITED: CLUSTER TOOLS -HARDWARE AND PROCESS

INTEGRATION

J. R. Hauser 265

INVITED: CHEMISTRY OF SiH2CL2 ON SILICON SUR¬

FACES: ADSORPTION SPECIES, ADSORPTION

AND DESORPTION KINETICS AND MODELING

OF Si CVD GROWTH

P. A. Coon, M. B. Robinson, M. L. Wise,A. C. Dillon and S. M. George 277

xiii

DECOMPOSITION OF POLY-Si/Si02 UNDER HYDROGEN PRE-

BAKE IN A REDUCED PRESSURE EPITAXIAL REACTOR

M. Y. Hong, N. D. Theodore, J. Steele

and Y-C. See 288

LOW TEMPERATURE ATMOSPHERIC PRESSURE CHEMICAL

VAPOR DEPOSITION FOR EPITAXIAL GROWTH OF SiGe

BIPOLAR TRANSISTORS

T. O. Sedgwick, J. N. Burghartzand D. A. Grtitzmacher 298

STRUCTURAL AND ELECTRICAL PROPERTIES OF POLY-

SILICON FILMS DEPOSITED AT 5 mbar IN A RTP

REACTORB. Semmaehe, S. Kaddour-Krieger, M. Lemiti,

D. Barbier, S. Fayeulle and A. Laugier 311

A TWO-STEP POLYSILICON DEPOSITION PROCESS FOR

GRADED DOPED GATES

E. Ibok, B. Moore and S. Garg 322

INVITED: THE LIMITATION OF EXTRINSIC DEFECT

DENSITY ON THIN GATE OXIDE SCALING

IN VLSI DEVICES

B. B. Triplett 333

DIELECTRIC DEGRADATION OF SILICON DIOXIDE FILMS

CAUSED BY METAL CONTAMINATIONS

M. Takiyama, S. Ohtsuka, S. Hayashiand M. Tachimori 346

MICROSTRUCTURE, ELECTRICAL PROPETIES AND PASSI¬

VATION OF DEFECTS AT THE SILICON-SILICON-DIOXIDEINTERFACE

A. Correia, D. Ballutaud and J.-L. Maurice 358

STRUCTURE AND MORPHOLOGY OF "D-DEFECTS" IN CZ Si

J-G. Park, H. Kirk, K-C. Cho, H-K. Lee, C-S. Lee

and G. A. Rozgonyi 370

A MODEL FOR ROOM-TEMPERATURE WET OXIDATION OFSILICON

G. F. Cerofolini, L. Meda and R. Falster 379

INVITED: SILICON-ON-INSULATOR TECHNOLOGY: OUTLOOKFOR BONDED WAFERS

S. S. Iyer, T. 0. Sedgwick, P. M. Pitnerand M. J. Tejwani 3 91

xlv

INTERFACIAL STRUCTURE OF BONDED SILICON WAFERSM. Reiche, U. G6sele and Q.-Y. Tong 4 08

VOID FORMATION AND ANNIHILATION IN SILICONDIRECT WAFER BONDING

F. Secoo d'Aragona and H-D. Chiou 420

CHARACTERIZATION OF THIN-FILM BESOI USING A CVD

Sil-X-y"Gex"BV ETCH STOP

C. A. Desmond, C. E. Hunt and T. Wetteroth 432

EPITAXIAL GROWTH ON POROUS Si FOR A NEW BOND AND

ETCH-BACK SOI

N. Sato, K. Sakaguchi, K. Yamagata,Y. Fujiyama and T. Yonehara 443

CHAPTER 5 -- SILICON-BASED MATERIALS FOR LIGHT

EMISSION 455

INTRODUCTION REMARKS: SILICON-BASED MATERIALS FOR

LIGHT EMISSION

D. L. Canham and N. Koshida 457

INVITED: LIGHT EMISSION IN SILICON

N. Matsumoto 460

INVITED: LUMINESCENCE OF SILICON MATERIALS

L. E. Brus 470

INVITED: LIGHT EMISSION FROM POROUS SILICONUNDER PHOTO-AND ELECTRO-EXCITATION

A. Bsiesy, J. C. Vial, F. Gaspard,R. H^rino, M. Ligeon, F. Muller

and R. Romestain 475

INVITED: ERBIUM-DOPED SILICON FOR INTEGRATED

OPTICAL INTERCONNECTSL. C. Kimerling, D. M. Koker, B. Zheng,

F. Y. G. Ren and J. Michel 486

INTENSE ROOM TEMPERATURE LIGHT EMISSION IN POROUS

SILICON: FROM LESS THAN 450 nm TO BEYOND 1.5 (im

P. M. Fauchet, C. Peng, L. Tsybeskov, J. Vandyshev,A. Dubois, A. Raisanen, T. E. Orlowski,

L. J. Brillson, J. E. Fouquet, S. L. Dexheimer,J. M. Rehm, G. L. McLendon, E. Ettedgui, Y. Gao,

F. Seiferth and S. K. Kurinec 499

ELECTRONIC AND OPTOELECTRONIC ANALYSES OF VISIBLE

LUMINESCENCE MECHANISM OF POROUS SILICON

H. Koyama, T. Oguro, T. Ozaki, Y. Suda

and N. Koshida 511

WHAT'S NEW WITH THERMALLY OXIDIZED POROUS SILICON?

V. Petrova-Koch, T. Muschik, D. Kovalev

and F. Koch 523

IN-SITU X-RAY STUDY OF THE WETTING OF POROUS SILICON

D. Bellet, G. Dolino, M. A. Hory, I. Mihalcescu

and R. Romestain 533

OPTICALLY INDUCED ABSORPTION IN POROUS SILICON AND

ITS APPLICATION TO LOGIC GATES

T. Matsumoto, T. Futagi, N. Hasegawa, H. Mimura,

and Y. Kanemitsu 545

THEORY OF SPIN AND PHONON STRUCTURES IN OPTICAL

SPECTRA OF Si NANOCRYSTALST. Takagahara 552

LIGHT EMISSION AND RELATED MATERIALS PROPERTIES OF

SILOXENE AND Si-BASED ZEOLITES

H. C. Mogul, J. Xu, A. J. Steckl, S. J. Clarson,and C. L. Hoffmann 563

PHYSICAL CHARACTERIZATION OF SILICON AND POROUS

SILICON BASED ELECTROLUMINESCENT DIODES

P. A. Badoz, L. Garchery and A. Halimaoui 569

CHAPTER 6 -- POINT AND EXTENDED DEFECTS 57 5

INTRODUCTORY REMARKS - POINT AND EXTEND DEFECTS

U. Gosele and W. Schr6Ler 577

INVITED: SIMULATION OF DIFFUSION PROCESSES IN

SILICON FOR ULSI APPLICATIONS

M. Orlowski 579

EQUILIBRIUM CONCENTRATIONS OF INTRINSIC POINT

DEFECTS IN SILICON DETERMINED BY ZINC DIFFUSION

H. Bracht, N. A. Stolwijk and H. Mehrer 593

DIRECT MEASUREMENT OF SELF-INTERSTITIAL CONCEN¬

TRATIONS IN GOLD DIFFUSED SILICON

A. DSller, M. Seibt and W. SohrSter 603

xvi

SIMULATION OF BURIED LAYER EXPERIMENTS CONTAIN¬ING ALL FOUR DOPANT SPECIES

K. Ghaderi, G. Hobler, M. Budil, H. PStzl,P. Pichler, H. Ryssel, W. Hansch, I. Eisele,

C. Tian and G. Stingeder 613

POINT DEFECT DYNAMICS IN SILICON AND THE CON¬

NECTION BETWEEN MICRODEFECT FORMATION AND

OPERATING CONDITIONS IN THE BULK GROWTH OF

SILICON

T. Sinno and R. A. Brown 625

DISTRIBUTION OF GROWN-IN CRYSTAL DEFECTS FORMED

BY POINT DEFECT DIFFUSION

R. Habu, A. Tomiura and H. Harada 635

INVITED: EBIC INVESTIGATIONS OF EXTENDED DEFECTS

AND THEIR INTERACTIONS WITH IMPURITIES

P. R. Wilshaw and T. S. Fell 647

CATHODOLUMINESCENCE AND EBIC STUDY ON DISLOCATIONS

IN Si CRYSTALS

T. Sekiguchi, S. Kusanagi, B. Shen and K. Sumino 659

ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED

EXTENDED DEFECTS IN SILICON

J. Vanhellemont, E. Simoen, G. Bosnian, C. Claeys,

A. Kaniava, E. Gaubas, A. Blondeel

and P. Clauws 670

OBSERVATION OF RING-OSF NUCLEI IN CZ-Si USING SHORT

TIME ANNEALING AND IR LIGHT SCATTERING TOMOGRAPHY

K. Marsden, S. Sadamitsu, M. Hourai,S. Sumita and T. Shigematsu 684

CHARACTERIZATION OF TRANSITION METAL-DOPED

SILICON CRYSTALS PREPARED BY FLOAT ZONE TECHNIQUEH. Lemke 695

KINETICS OF DOPANT PRECIPITATION IN SILICON

S. T. Dunham 711

SELF-INTERSTITIAL AGGLOMERATION IN ION-IMPLANTED

SILICON

M. Seibt, J. Imschweiler and H.-A. Hefner 720

MORPHOLOGY CHANGE OF OXIDE PRECIPITATES IN CZ

SILICON DURING TWO-STEP ANNEALING

K. Sueoka, N. Ikeda, T. Yamamoto and S. Kobayashi 732

xvil

INFLUENCE OF COOLING CONDITION DURING CRYSTAL

GROWTH OF CZ-Si ON OXIDE BREAKDOWN PROPERTY

T. Iwasaki, Y. Tsumori, K. Nakai, H. Haga,

K. Kojima and T. Nakashizu 744

INTERACTION OF POINT AND EXTENDED DEFECTS IN

SILICON: THEIR INFLUENCE ON THE POLYCRYSTALLINE

SILICON SUBSTRATE QUALITY FOR HIGH EFFICIENCY SOLAR

CELLS

S. Pizzini, M. Acciarri, S. Binetti, S. Acerboni

and C. Savigni 756

CHAPTER 7 -- GETTERING PHENOMENA 7 69

INTRODUCTORY REMARKS -- GETTERING PHENOMENA

E. R. Weber and H. Tsuya 771

INVITED: GETTERING PHENOMENA IN SILICON

D. Gilles and H. Ewe 77 2

INVITED: GETTERING TECHNIQUES OF HEAVY METAL

IMPURITIES IN SILICON

M. Sano, S. Sumita, T. Shigematsuand N. Fujino 784

BASIC MECHANISM OF INTERNAL GETTERING: HETEROGENEOUS

PRECIPITATION OF COBALT AND NICKEL IN CZ-SILICON

H. Ewe, D. Gilles, S. K. Hahn, M. Seibt

and W. Schrater 7 96

GETTERING OF METAL IMPURITIES BY CAVITIES IN SILICON

S. M. Myers, D. M. Follstaedt, D. M. Bishopand J. W. Medernach 808

IRON GETTERING EFFICIENCY BY A POLYSILICON LAYER

IN P-TYPE CZ SILICON

D. M. Lee, K. Mishra, W. Huber, S. Chevacharoenkul,S. P. Choi and I. H. Doh 820

INVITED: GETTERING PHENOMENA IN EPITAXIAL

SILICON STRUCTURES

F. G. Kirscht 831

ON THE ORIGIN OF INTERNAL GETTERING SUPPRESSIONIN LOW CARBON CZ SILICON BY RAPID THERMAL

ANNEALING

C. Maddalon-Vinante, J. p. Vallard and D. Barbier 844

ULTRASOUND TREATMENT OF CZ-Si WITH "RING DEFECTS"S. Ostapenko, N. Ikeda and F. Shimura 856

xviJi

INVITED: LOW TEMPERATURE IMPURITY GETTERING FORGIGA-SCALE INTEGRATED CIRCUIT TECHNOLOGY

G. A. Rozgonyi, S. Koveshnikov

and A. Agarwal 868

EFFECTS OF INTRINSIC GETTERING ON RAM CORRUPTION

AND DEVICE YIELD OF A CMOS PROCESS

L. A. Cerra and H-D. Chiou 884

COMPUTER SIMULATION OF THE INFLUENCE OF POINT

AND EXTENDED DEFECTS ON THE PRECIPITATION OF

OXYGEN DURING RAPID THERMAL PROCESSING

J. Esfandyari, S. Senkader, G. Hobler,H. Potzl and B. Murphy 896

CONTROLLING THE OXYGEN PRECIPITATION IN NON-EPI

WAFERS TO PREVENT CHARGE LEAKAGE FROM DRAM

TRENCH CAPACITORS

A. E. Stephens 908

DIFFUSION-SEGREGATION EQUATION AND SIMULATION

OF THE DIFFUSION-SEGREGATION PHENOMENA

T. Y. Tan, R. Gafiteanu and U. M. Gosele 920

CHAPTER 8 -- INTEGRATED CIRCUIT PROCESS INTEGRATION 931

INTRODUCTORY REMARKS -- INTEGRATED CIRCUIT PROCESS

INTEGRATION

R. Sivan and K. Yamabe 933

INVITED: MICRODEFECTS AND IMPACT ON IC PROCESS

INTEGRATION

A. Ohsawa, A. Hara, M. Aoki,M. Koizuka and T. Fukuda 93 6

INVITED: MATERIALS REQUIREMENTS FOR FUTURE

SEMICONDUCTOR TECHNOLOGY

T. E. Seidel, P. K. Vasudev

and T. Stanley 947

INVITED: REVIEW OF X-RAY LITHOGRAPHY

G. K. Celler 962

GATE OXIDE QUALITY RELATED TO BULK PROPERTIES AND

ITS INFLUENCE ON DRAM DEVICE PERFORMANCE

R. Winkler and G. Behnke 973

XlK

N+-P JUNCTION LEAKAGE CURRENT GENERATED BY MICRO-

DEFECTS IN DENUDED ZONE OF 64Mb DRAM SILICON

SUBSTRATESM. Horikawa, T. Mizutani, T. Suzuki and K. Arai 987

EVALUATION OF PN JUNCTION LEAKAGE CURRENT IN

VARIOUS IG PROCESSED Si WAFERS

H. Abe, Y. Murakami, H. Koya, I. Suzuki

and H. Suga 997

A DISLOCATION FORMATION MODEL OF TRENCH-INDUCED

DISLOCATIONS (TIDs) IN DYNAMIC RANDOM ACCESS

MEMORIES (DRAMs)M. Dellith, G. R. Booker, B. 0. Kolbesen,

W. Bergholz and F. Gelsdorf 1008

DEGRADATION OF SILICON NITRIDE INTEGRITY DURING

COBALT SILICIDE PROCESSING

G. R. Hueckel, T. Nguyen and II, L. Ho 1020

EFFECT OF OXYGEN ON POINT DEFECT INJECTION DURING

SILICIDATION OF TITANIUM

J, Chen, H. G. Robinson, S. B. Herner

and K. S. Jones 1029

EFFECTS OF LOW-DOSE SILICON, CARBON AND OXYGEN

IMPLANTATION DAMAGE ON DIFFUSION OF PHOSPHORUS

IN SILICON

S. Chaudhry and M. E. Law 1041

SIMULATION OF TEMPERATURE DISTRIBUTIONS DURING

FAST THERMAL PROCESSING

M. Schrems, A. Yamamoto, Y. Mikata, K. Usuda

and K. Nakao 1050

CHAPTER 9 -- DIAGNOSTIC ANALYSIS 10 65

INTRODUCTORY REMARKS - - DIAGNOSTIC ANALYSIST. J. Shaffner and S. Kawado 1067

INVITED: CONTACTLESS SEMICONDUCTOR MEASUREMENTS

D. K. Schroder 1071

NON-CONTACTING AND NON-DESTRUCTIVE MEASUREMENTS

OF PHOTOCONDUCTIVITY TRANSIENT USING UV Him-WAVE

TECHNIQUE---EVALUATION OF DZ WIDTH, EPITAXIAL LAYER

CONTAMINATION AND SURFACE PROPERTY OF Si WAFER

Y.-i. Ogita, K. Yakushiji and N. Tate 1083

XX

PHOTOLUMINESCENCE MEASUREMENTS OF TRACE AMOUNTS OF

TRANSITION METAL IMPURITIES IN SILICON CRYSTAL

M. Nakaitmra and T. Suzuki 1093

MAPPING OF DEFECT RELATED SILICON BULK AND

SURFACE PROPERTIES WITH THE ELYMAT TECHNIQUEJ. Carstensen, W- Lippik and H. Ffill 1105

DETECTION OF PROCESS INDUCED DISLOCATIONS IN SILICON

J. L. Benton, G. S. Higashi and T. Boone 1117

INVITED: DETECTION OF DEFECTS IN SILICON

USING SYNCHROTRON RADIATION

Y. Sugita, S. Iida and H. Kawata 1123

IMAGING-PLATE PLANE-WAVE X-RAY TOPOGRAPHY AND

ITS APPLICATION TO CHARACTERIZATION OF LATTICE

DISTORTION IN AS-GROWN SILICON

Y. Kudo, K. Y. Liu, S. Kojima, S. Kawado,and T. Ishikawa 1135

DISTRIBUTION OF MICROCRYSTALS IN AMORPHOUS

Si02 ON Si(001) SURFACE

I. Takahashi and J. Harada 1147

INVITED: MICROROUGHNESS OF SILICON WAFERS

W. M. Bullis 1156

THE EFFECT OF H2 ANNEALING ON THE Si SURFACE AND

ITS USE IN THE STUDY OF ROUGHENING DURING WET

CHEMICAL CLEANING

S. Verhaverbeke, T. Futatsuki, R. Messoussi

and T. Ohmi 1170

SURFACE ROUGHNESS OF Si WAFERS: CORRELATING AFM

AND HAZE MEASUREMENTS

I. J. Malik, K. Vepa, S. Pirooz, A. C. Martin

and L. W. Shive 1182

APPENDICES

APPENDIX 1 - AUTHOR INDEX

APPENDIX 2 - SUBJECT INDEX

x:ci