Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost...

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Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost Kick-off meeting, Madrid 7th February 2007 IBPOWER UNott HMI Project Review (Science) IES UPM

Transcript of Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost...

Page 1: Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost Kick-off meeting, Madrid 7th February 2007 IBPOWER.

Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

Kick-off meeting, Madrid 7th February 2007

IBPOWER

UNott HMI

Project Review

(Science)

IES UPM

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Agenda

Time Elapsed time (hrs) Topic Who10:00 0:05 Welcome to IES Luque10:05 0:15 Introductory presentation by the Commission Anderson

10:20 0:15 Project Review (Science-General overview) Marti

10:35 0:45Project Review (Reporting and Administrative structure, inmediate goals) Marti

11:20 0:30 Coffe-break All11:50 0:30 Questions All

12:20 0:15My view of the Project: the next six months (10 minutes + 5 minutes questions) UG

12:35 0:15My view of the Project: the next six months (10 minutes + 5 minutes questions) UNott

12:50 0:15My view of the Project: the next six months (10 minutes + 5 minutes questions) Riber

13:05 0:15My view of the Project: the next six months (10 minutes + 5 minutes questions) HMI

13:20 0:15My view of the Project: the next six months (10 minutes + 5 minutes questions) UPM-IES

13:35 1:00 Lunch All14:35 1:00 General discussion All

15:35 0:30Summary of the actions to be taken in the next six months All

16:05 0:05 Location of Nex Meeting All16:10 0:30 Coffe-break All16:40 1:00 Tour to the Institute All17:40 End of meeting

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Outline

• Background• The work-packages• Immediate actions overview

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Background

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Background

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P = I x V

I

V

Background

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P = I x V

I

V

I

V

Background

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P = I x V

I

VI

V

Background

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P = I x V

I

VI

V

optimum(~silicon)

Background

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P = I x V

I

VI

V

Background

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P = I x V

I

VI

V

Background

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P = I x V

I

VI

V

Background

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IES UPMA. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

n+ emitter

p+ emitter

IB material

Background

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IES UPMA. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

n+ emitter

p+ emitter

IB material

Background

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Sun

V=0

R=0

A. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

Background

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IES UPMA. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

V

Sun

Background

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IES UPMA. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

V

Sun

Background

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IES UPMA. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

V

Sun

eV

Background

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IES UPMA. Luque, and A. Martí, Physical Review Letters 78, 5014 (1997).A. Luque, and A. Martí, Progress in Photovoltaics: Res. Appl. 9, 73 (2001).

63.2 %

0.71 eV

1.24 eV 1.95 eV40.7 %

Background

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tandem of 2 IBSC:6 gaps only one tunnel junction

conventional 6 gaps tandem5 tunnel junctions

E. Antolín, A. Martí, and A. Luque, in Proc. of the 21st European Photovoltaic Energy Conference, 2006, pp. 412--415.

Background

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Background

FULLSPECTRUM

IBC QD-IBSC

TF-IBSC

GaInN-IBSC

XMetal-IBSC

solar cells !

CONFIDENTIAL

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Outline

• Background• The work-packages• Immediate actions overview

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WP1: QD-IBSC

QUANTUM DOT INTERMEDIATE BAND SOLAR CELL

A. Martí, L. Cuadra, and A. Luque, in NEXT GENERATION PHOTOVOLTAICS: High Efficiency through Full Spectrum Utilization (Institute of Physics Publishing, Bristol, 2003), pp. 140.

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IES UPMA. Martí, L. Cuadra, and A. Luque, in NEXT GENERATION PHOTOVOLTAICS: High Efficiency through Full Spectrum Utilization (Institute of Physics Publishing, Bristol, 2003), pp. 140.

WP1: QD-IBSC

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WP1: QD-IBSC

current is not increasedbecause dots do not absorb enough light

FULLSPECTRUM (first months) IBPOWER will take over

voltage recovery requires concentration

IBPOWER (concentration devices)

CONFIDENTIAL

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WP2: TF-IBSC

CONFIDENTIAL

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WP3: InGaN-IBSC

CONFIDENTIAL

• Mn in high concentration• Also As (arsenic)

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WP4: Xmetal-IBSC

CONFIDENTIAL

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WP5: Characterisation & Modelling

CONFIDENTIAL

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Objectives

4 intermediate band solar cells

4 objectives

•To manufacture XMetal-IBSCs•To manufacture Thin film-IBSCs•To manufacture InGaN-IBSCs•To manufacture QD-IBSCs

CONFIDENTIAL

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Outline

• Background• The work-packages• Immediate actions overview

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Inmediate actions

• Dedicated meetings, if neccesary, to TF-IBSC (HMI&UPM-IES) InGaN-IBSC (Unott&UPM-IES&UG) XMetal-IBSC (Riber&UPM-IES&UG)

6 months (August 1st) year 1

WP1 QD-structure grown +processed & characterised

WP2 TF cell manufactured + characterized

WP3 1st InGaN test structure + characterization

WP4 MBE assembly well advanced

+ first test samples

WP5 complete theoretical studies (mainly InGaN and X-Metal and TF-IBSC)

+characterization

CONFIDENTIAL

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Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

Kick-off meeting, Madrid 7th February 2007

IBPOWER

UNott HMI

Project Review

(Reporting and Administration)

IES UPM

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Logo

IBPOWER

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Gender issues

• a compulsory topic in the agenda

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Rules

• Rule 1: Make the Commission happy

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Rules

• Rule 1: Make the Commission happy ...by delivering the deliverables on timeCONFIDENTIAL

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Rules

• Rule 1: Make the Commission happy• Rule 2: Make the Commission happier

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Rules

• Rule 1: Make the Commission happy• Rule 2: Make the Commission happier

...by achieving milestones= “scientific excellence”

CONFIDENTIAL

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Rules

• Rule 1: Make the Commission happy• Rule 2: Make the Commission happier• Rule 3: Make the Commission happiest

...by providing financial reports

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A few words of dissemination

• For the general public

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A few words of dissemination

• For the general public• For the scientific community

International Journals

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A few words of dissemination

• For the general public• For the scientific community

Acknowledgment to EC

External reviewing

Deep thinkingPrecisse comunication

among partners

International prestigeEuropean Research

International Journals

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Acknowledging

This work has been supported by the European Commission through the Project IBPOWER, Grant Agreement 211640

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Guidance for reporting

• Will appear published in http://cordis.europa.eu/fp7/find-doc_en.html. Following Annex II.4, we preview:

1. The consortium shall submit a periodic report to the Commission for each reporting period within 60 days after the end of each respective period. The reporting shall comprise:

a) an overview, including a publishable summary, of the progress of work towards the objectives of the project, including achievements and attainment of any milestones and deliverables identified in Annex I. This report should include the differences between work expected to be carried out in accordance with Annex I and that actually carried out

b) an explanation of the use of the resources (we plan to send a template)c) a financial statement, from each beneficiary together with a summary financial report consolidating

the claimed Community contribution of all the beneficiaries in an aggregate form, based on the information provided in Form C (Annex VI) by each beneficiary. (Can be downloaded from: http://www.ies-def.upm.es/ibpower/downloads/annex6cp_en.pdf)

• Audit certificate on finantial statments (every 375000 €) Annex VII Form D (Can be downloaded from http://www.ies-def.upm.es/ibpower/downloads/fp7-ga-annex7d_en.pdf).

• Audit certificate on methodology (requested by beneficiary and if Accepted by EC, there is no need to submit Audit Certificate on finantial statments) Annex VII Form E (Can be downloaded from http://www.ies-def.upm.es/ibpower/downloads/fp7-ga-annex7e_en.pdf).

Can we get Word versions for Annex VI and VII?

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Semester Report Forms (internal forms)

• Let’s have a look to the form: link

• can be downloaded form www.ies-def.upm.es/ibpower http://www.ies-def.upm.es/ibpower/downloads/6monthsheet_IBPOWER_v10.doc

• serves to track publications• serves to collect presentations (mark as “confidential” confidential slides)• serves as check list for the meeting• reward: if you publish, only the presentation!

CONFIDENTIAL

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Reflection

• It is a project of Risk but also of oportunities, for example:

– Inplementing the IBSC with QDs and X-Metal IBSC application by themselves or in multistack systems.

– TF-IBSC.– All InGaN solar cell.

CONFIDENTIAL

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Next meeting

We plan to rent a room at some Hotel during the European PV conference:September 1-5th 2008 (http://www.photovoltaic-conference.com)

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Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost

Kick-off meeting, Madrid 7th February 2007

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UNott HMI

The next six months

IES UPM

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The next six months

Main guideline: To progress effectively towards complete solar cell manufacturing

• Define structures

CONFIDENTIAL

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Concentrator QD-IBSC

QD-IBSC reference

CONFIDENTIAL

Description Thickness Dop Repetition

p GaAs contact 5nm 5.00E+18p Al0.85Ga0.15As 50nm 2.00E+17p GaAs 0.9 mic 2.00E+18

n base 3 mic 2.00E+17n+ buffer 1 mic 2.00E+18

n+ GaAs substrate

n GaAs 0.27 mic 2.00E+17

Description Thickness Dop Repetition

p GaAs contact 5nm 5.00E+18p Al0.85Ga0.1As 50nm 2.00E+17p GaAs 0.9 mic 2.00E+18n damping 0.17mic 1.00E+17un GaAs cap 5 nmDelta Si-Dop - 2e10 cm-2un GaAs cap 5 nmInAs QD 2.7 MLun-GaAs 0.1 mic. -n base 3 mic 2.00E+17n+ buffer 1 mic 2.00E+18

n+ GaAs substrate

10 X

(includes figures revised during the kick-off)

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XMetal-IBSC

referenceXMetal-IBSC

CONFIDENTIAL

Description Thickness Dop Repetition

p GaAs contact 300nm 1.00E+19p Al0.85Ga0.15As 30nm 5.00E+18p GaAs 0.9 mic 2.00E+18

n base 2 mic 2.00E+17n+ buffer 1 mic 2.00E+18

n+ GaAs substrate

1 mic. -GaAs + Ti

Description Thickness Dop Repetition

p GaAs contact 300nm 1.00E+19p Al0.85Ga0.15As 30nm 5.00E+18p GaAs 0.9 mic 2.00E+18

n base 2 mic 2.00E+17n+ buffer 1 mic 2.00E+18

n+ GaAs substrate

n GaAs 1 mic 2.00E+17

(includes figures revised during the kick-off)

Page 53: Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost Kick-off meeting, Madrid 7th February 2007 IBPOWER.

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InGaN-IBSC

(Mn) In0.85?Ga0.15?N-IBSC reference

CONFIDENTIAL

Description Thickness Dop Repetition

p GaN 300 nm 2.00E+18

GaN n 300 nm 2.00E+17n+ buffer 300 nm 2.00E+18

n+ GaAs

0.5 mic.In0.85Ga0.15?N +

Mn

Description Thickness Dop Repetition

p GaN 300 nm 2.00E+18

GaN n 300 nm 2.00E+17n+ buffer 300 nm 2.00E+18

n+ GaAs

0.5 mic.In0.85Ga0.15?N

(includes figures revised during the kick-off)

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InGaN-IBSC

CONFIDENTIAL

C. T. Foxon, I. Harrison, S. V. Novikov, A. J. Winser, R. P. Campion, and T. Li, "The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy " Journal of Physics-Condensed Matter vol. 14, pp. 3383-3397, 2002.

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TF-IBSC

CONFIDENTIAL

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Summary next 6 months

3 months, public website operative. Quantum dot solar cell designed for concentration. CuGaS2 layer with 2 dopants tests (solar cells) Rich In GaN composition controlled + investigation of p

dopant. A picture of the MBE machine The energy levels (Mn in GaN, other options for TF-IBSC)

revisited by ab-initio calculations.