Innovative Embedded Technologies to Enable Thinner IoT ...€¦ · Innovative Embedded Technologies...

Innovative Embedded Technologies to Enable

Thinner IoT/Wearable/Mobile Devices

Jensen Tsai Deputy Director, SPIL

Wearable

Internet of Things

Automotive

Mobile Devices Building

a Smarter World

Building a Smarter World

2

Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT

Fan-Out WLP

Molded WLCSP

Partition EMI Coating

Two Side PKG

FC-MISBGA

Embedded Technologies

3

Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT

Fan-Out WLP

Molded WLCSP Two Side PKG

FC-MISBGA



4

MCU + BLE COB Size : 18x12mm

BLE Locker BLE Toy iRhytm

Hearing Aid Swimming Band Hand Band

Module Miniaturization

WiFi Speaker

MCU + WiFi COB Size : 22x19mm

WiFi Sensor Hub

WiFi Plug

WiFi Bulb WiFi Air Conditioner

10*10mm 6.5*6.5mm

Antenna in SiP

Die on CAP

1

2

Two Side PKG

EMI Coating 3

4

5

Antenna in SiP Modules

Sub. Baking

SMT (Comp & Ant)

D/B (DB1 & DB2)

W/B (WB1 & WB2)

MD

Singulation Laser Marking

FT

De-flux Cleaning

SMT

D/B & W/B

MK, FS & SF

• Status : MP from 2013/Dec Application : BLE (2.4GHz),

• HVM > 10 M Units, Yield > 99.5%

QUAL Test Result

Test Item

Pre-Con

TCT Hast uHast TST HTSL

Cycles

300/500 1000 1500 2000

96 96 300 500

500 1000 1500 2000

Result Pass Pass Pass Pass Pass Pass

Status : Mass Production

1

6

One-Piece metal frame is assembled by SMT

EMI partition shielding wall

Antenna Frame Antenna routing on substrate

One-piece metal frame assembly, having 2 function devices (antenna & EMI partition shielding wall ) after sinulation.

Arrange support pin out of package to optimize design area in package

Singulation

Sputter coating

• Status : Qualification

Antenna in Package with EMI Shield 1

7

Stack Die on Passives

QUAL Test Result

Test Item

Pre-Con

TCT Hast uHast TST HTSL

Cycles

300/500 1000 1500 2000

96 96 300 500

500 1000 1500 2000


SMT (Passives Attach)

D/B & W/B MD Singulation

2

8

• Status : Mass Production

EMI Coating Process Flow

F/C RLC X’tal

RLC X’tal F/C

RLC X’tal

Saw

F/C

RLC X’tal F/C

Prior Assembly

Pre-baking

Molding

PMC

Laser Marking

Singulation

Baking

Sputter Coating

VM

QUAL Test Result

Test Item Pre-Con

TCT uHast HTSL

Cycles 500x 1000x 96 500 1000


• Sputtering machine : LINCO SERIES

• Coating Material : SUS+Cu+ SUS

• Min Top Cu Thickness : 2um min.

• Top SUS Thickness : 0.1um min.

3

9


10


• Application :

(1) Multi-Band RF SiP Modules (CDMA / LTE / Dual Band WiFi)

(2) EMI sensitivity SiP Modules (AP + PMIC + 802.11ac, ..)

• Advantage:

(1) Light & Compact Module Size

(2) Flexible Shielding Design

(3) Miniaturization, higher performance, lower cost and higher integration

EMI Metal Frame Shielding

EMI Coating w/ Partition

3


Double Side Package for PMIC Module

- PKG size: 16*14mm

- Top side WLCSP : 5.97mm*4.82mm, function : PMIC

QFN : 3 mm *3 mm, function : LCD Driver

Passive : 48 ea

- Bottom side WLCSP : 4.5 mm *4.5mm , function : RGB Converter

Passive : 115 ea

PKG Information:

Top Side Bottom Side

LCD Driver

(DC/DC Booster)

RGB Converter

Pre-con MSL3 /260 ℃

TCT (-55C~115°C)

TCT (-55C~115°C)

HAST (130°C, 85%RH)

HTST (150 ℃)

(w/o precon)

HTST (150 ℃)

(w/o precon)

Reflow 3X 500X 1000X 96hrs 500hrs 1000hrs

Pass Pass Pass Pass Pass Pass

4

11


Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT


Two Side PKG

FC-MISBGA


Fan-Out WLP

Molded WLCSP

12

TDK PMIC modules with EDS

Key process : EDS (Embedded Die Substrate)

13

PMIC Modules for smart phone

13

EDS (Embedded Die Substrate, for PMIC)

Base Information:

•Package size / IO: 5.8*5.8/145

• Max package height: 1.4mm

• Capacitor:

• 0603_2P/X5R/10UF/6.3V/+/-20%_T=0.55MM

• 0603_2P/X5R/4.7UF/10V/+/-10%_T=0.55MM

• 0402_2P/X5R/1UF/16V/+/-10%_T=0.55MM

•Substrate vendor: IBIDEN / Kinsus /TDK

No any abnormal be found by X-Ray

IPQC & RT Status All acceptable !

STATION IN Q'TY DEF. Q'TY OUT Q'TY YIELD

( PCS ) ( PCS ) ( PCS ) ( % )

SMT 365 0 365 100.00%

LASER MARKING 365 0 365 100.00%

SINGULATION 365 0 365 100.00%

OS 365 0 365 100.00%

FINAL VISUAL 365 0 365 100.00%

No delam be found by X-section

Lid adhesion

By solder paste

14

• Major Concern : Mass Production Yield Loss

Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT


Two Side PKG

FC-MISBGA


Fan-Out WLP

Molded WLCSP

15

IO Count Flip Chip Package Segment (Sweet Spot)

3x3

7x7

11x11

15x15

19x19

23x23

27x27

31x31

35x35

40x40

45x45

50x50

55x55

60x60

65x65

100 200 300 400 500

1000

2000

3000

4000

PKG Size (mm)

FCCSP

PoP

FCBGA

Large

FCBGA FO-PoP / HBW-PoP / PoP

(High I/O density & Low PKG profile)

Si Interposer / FO-MCM + FCBGA Large FCBGA

(High I/O density)

Si Interposer

FO-PoP HBW-PoP

FO-MCM + FCBGA

Substrate

IC IC

Si Interposer

FC-ETS FO-SD

16

FC-MISBGA

4

Source:

CORE

Normal Sub.

Embedded Sub.

PP

Embedded Trace Substrate (ETS) L/S < 20/20 um

17

• PKG type: FC-ETS (MUF)

• PKG size: 12x12x 0.75 mm

• Die size: 6.6x6.2x0.15 mm

• Bump pitch: 110 um

• Bump Height: 58 um (Cu 33/SiAg 25)

• Mold cavity : 0.45 mm

• Substrate thickness: 0.126 mm w/ 2L ETS

• Ball pitch/ diameter: 0.4mm /0.25mm

• IO count: 488

Package Information:

Reliability Test:

O/S Yield Pre-con MSL2aa/3 /260 ℃

HTST (150 ℃)

TCT (-65~150 ℃)

HAST

>99% Reflow 3X 1000hrs 1000X 192hrs

PASS PASS PASS PASS

X-ray top view

X-Section

SAT

Void Free (MUF)

2L FC-ETS L/S=15/15 um

18


• PKG type: FC-ETS (CUF & MUF)

• PKG size: 14x14x 0.9 mm

• Die size: 11x11x0.1 mm

• Bump pitch: 65um/80 um

• Bump Height: 58 um (Cu 35/Ni 3/SiAg 25)

• Mold cavity : 0.45 mm

• Substrate thickness: 0.188 mm w/ 3L ETS

• Ball pitch/ diameter: 0.4mm /0.25mm

• IO count: 976

Pkg Information:

Reliability Test:

O/S Yield Pre-con MSL2aa/3 /260 ℃

HTST (150 ℃)

TCT (-65~150 ℃)

HAST

>99.5% Reflow 3X 1000hrs 1000X 192hrs

PASS PASS PASS PASS

X-ray top view

X-Section

SAT

80um pitch / 2 escape 65um pitch / 1 escape

Void Free (CUF) Void Free (MUF)

3L FC-ETS with fine pitch L/S=8/10 um

19


Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT


Two Side PKG

FC-MISBGA


Fan-Out WLP

Molded WLCSP

20

Substrate via is formed by photolithography and Cu plating rather than laser drilling

Embedded trace, L/S >= 10/10um

NPL design

(Cu trace + Pre-Mold)

Mold Compound

MIS Substrate (Lower cost, Small form factor)

Metal Carrier Pre-treatment

(Cu plating) Image transfer (For top trace)

Cu plating (1st layer)

Image transfer (For ball pad)

Cu plating (2nd Cu layer)

Dry Film Stripping Molding Window Etching/Detach

and OSP coating

Topside View Bottom View

21

• PKG type: FC-MISBGA (MUF)

• PKG size: 12*12 mm2

• Die size: 6.2*6.8 mm2

• Bump pitch: 55/110um

• Bump Height: 58 um (Cu pillar)

• Wafer thickness : 150 um

• Mold cavity : 0.45mm

• Substrate thickness: 0.12 mm

• Trace Line/Space: 20/20um

• Ball pitch: 0.4 mm

• Ball Size: 0.25 mm

• IO count: 400

Base Information:

1L FC-MISBGA Readiness L/S=20/20 um

Reliability Test:

Pre-con MSL2a /260 ℃

TCT (-65~150 ℃)

HAST HTSL

Post reflow 3X 500X 1000X 192hrs 1000hrs

PASS PASS PASS PASS PASS

X-ray top view

X-Section SAT

22 Confidenti

al


22

• Package size: 12*12 mm

• Max. Package thickness: 0.9mm

• Mold thickness: 0.45mm

• Die size: 7*5 mm

• Die thickness : 8mil (200um)

• Bump pitch : 150um with 2 escaping traces

• Trace Line/Space: 15/15um

• Ball stand off height: 0.18mm

• Substrate thickness: 0.11mm

• Ball size /ball pitch : 0.25 / 0.4mm

Base Information:

In-line Process Quality:

Process Checking Item Criteria Sample

Size Result

Die Bond Non-wetting Not allow 100% Pass

Accuracy ±15um 100% Pass

Molding Incomplete fill

<250um

<1% die area 100% Pass

De-lamination Not allow 100% Pass

X-ray top view

X-Section X-ray top view

SPEC: <100um, Actual: <60um Shadow Moire

Crying (+) Smiling (-)

2L FC-MISBGA Readiness L/S=15/15 um

23


Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT

Fan-Out WLP

Molded WLCSP


Two Side PKG

FC-MISBGA


24

WLCSP mWLCSP

Mold

Compound

WLCSP with Backside lamination

mWLCSP with Backside lamination

Mold

Compound

Backside

lamination

Backside

lamination

Silicon

Solder

Ball

Mold

Compound

Mold Compound on Sidewall and Ball Side

mWLCSP Construction

5 Sides mWLCSP vs WLCSP

6 Sides mWLCSP vs WLCSP

Solder

Ball

UBM

PSV1 PSV2

SiN

RDL Trace

C

D Molding

C: 10um

D: 70um

500um 330um

25

Die

Mold

Compound

Solder Ball

Top view Side view

Advantage : Enhance board level TC

Decrease ELK stress

Zero side wall crack dppm (same wafer sort as WLCSP)

LG + ½ Die Saw Molding 100% Wafer

Probing Grinding UBM & BP SG &TR

Sidewall crack check by FIB

BSL

(optional)

Process Flow

mWLCSP Purpose

26

Die Die

Wafer Scribe Line (80um)

45

(1st Saw)

Molding

45

Die Die

Grinding

45

EMC

Sidewall

EMC

Sidewall

(1st Saw)

(2nd Saw)

BSL

mWLCSP Brief Process Flow

27

Wafer form, top side molding After singulation, EMC left at side wall

4

Before Clean

Solder Ball Clean

Die

Mold Solder Ball

Blade/Laser Saw

tape

Die Die

Laser

Key Challenges of mWLCSP

Singulation

Warpage post Grinding Topside Mold Thickness

After Clean

28

SMT Confirmation

SMT Confirmation:=> Good wetting

SMT has Good wetting (no bridge & no non-wetting)

After reflow process

Ball

(Sample size, 120pcs)

Left side Right side Center Center

BLR SMT X-section result:

Package information: - Die size: 7x7mm

- Die thickness: 200um

- Ball Pitch/Size/Height: 0.4mm / 250um /190um

mWLCSP SMT

29 • Status : Small Volume Mass Production

Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT

Fan-Out WLP

Molded WLCSP


Two Side PKG

FC-MISBGA


30

Fan-Out Solutions & Its Potential Applications I/O

Density

RDL

L/S(um) PKG Solution Application

Ultra

High

0.1

↓

2

High

2

↓

10

Low

>10

>15

Middle variability

2.5D (COWOS)

FO-PoP

1L FC-MIS

FO-MCM

HBW-PoP

FO-SD

Die #1 Die #2

Heat Spreader

Die #1 Die #2

Heat Spreader

FO-SIP SIP Module

2L MIP (FCCSP) FO-MCM

Mobile Application: 1. Smart Phone & Tablet

2. High End AP/BB

High-End Application: 1. High performance computing

2. Networking

3. Data servers

Low Pin Count Application:

(PMIC/RF...)

IoT/Wearable Application: 1. Connectivity

2. PMIC Module

Memory Application:

(DRAM, mLPDRAM...)

Various FO technologies to fulfill potential product applications

31

31

5.64 x 4.1mm

7.4 x 5.8mm

360/405 (POD: 0.65mm)

PMIC

Layer 1L

L/S 10/10

0.25 mm

0.4 mm

200

Ball Size

Ball Pitch

I/O Count

Basic Information

Chip Dimension

Package Dimension

Application

RDL

Die/Mold THK (um)

Die

360um

Compound

405um

POD: 0.65mm

405 um

DIE

SOLDER BALL

PSV1

PSV2 RDL

MC

360 um

650 um

Reliability Result:

TEST LEVEL TEST ITEM SAMPLE

SIZE RESULT

PACAKGE

Level

PRECON 90pcs PASS

HTSL (1000 Hrs.) 45pcs PASS

uHAST (196 Hrs.) 45pcs PASS

TCB 1000 CYCLE 45pcs PASS

12” FO-SD (Single Die) 1 RDL Layer L/S=10/10 um

32


Drop Test (1500G, 0.5 ms, 30 drops) TCT (-40℃~125℃ , 500 cycles)

SAC_Q

TEST

LEVEL TEST ITEM SAMPLE SIZE Results First Failure

Board Level

Drop Test 30 units PASS 157x

TCT >500 30 units PASS 703x

SAC_Q(Cyclomax): Sn4Ag0.5Cu0.05Ni3Bi0.007Ge

12” FO-SD (Single Die) 1 RDL Layer L/S=10/10 um

33

FO-MCM(Multi-Chip Module) for AP/DDR L/S=2/2 um

5

Condition Criteria S/S

Precon Level 3 / 260 40/40 PASS

TCB -55°C ~ 125°C, 1000X 25/25 PASS

HTS 150°C, 1000Hrs 10/10 PASS

uHAST 130°C / 85%, 96Hrs 15/15 PASS

Basic Information:

15x14mm package

( THK 0.62mm w/ BGA ball)

Two top die 11x8mm,11x4.5mm

I/O: 1188

Application: Tablet BB

Top Die

2/2 RDL1

5/5 RDL2

10/10 RDL3

Via

MUF

u-bump MUF

34 Confidential 34

No delam. issue & Pass RA test Status : Engineering

FO_SiP Concept z-height 0.8mm

Multi Chips Module w/ EMI Shielding

800um

DSC (0201 & 01005) > 50pcs

CSP die

EMI

MUF Sidewall EMI

UBM

RDL1

RDL2

RDL3

PSV1

PSV2

PSV3

PSV4

BP 0603

MUF

No delam. issue & Pass RA test Status : Engineering 35

Summary

Antenna in SiP

Die on CAP

Embedded Die SBT

Embedded Trace SBT

Fan-Out WLP

Molded WLCSP


Two Side PKG

FC-MISBGA Building

a Smarter World

36

Various embedded technologies fulfilling product applications !!

Contact Information:

[email protected]

Solution Providing Innovative Leader

mailto:[email protected]

mailto:[email protected]

Innovative Embedded Technologies to Enable Thinner IoT ...€¦ · Innovative Embedded Technologies...

Documents

Transcript of Innovative Embedded Technologies to Enable Thinner IoT ...€¦ · Innovative Embedded Technologies...