Innovative approaches for CIGS Solar Cells · 2016-09-26 · Proof of concept of nanostructured...
Transcript of Innovative approaches for CIGS Solar Cells · 2016-09-26 · Proof of concept of nanostructured...
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Daniel LincotInstitut Photovoltaïque Ile de France (IPVF)
Institut de Recherche et Développement sur l’Energie Photovoltaïque IRDEP CNRS‐EDF‐CHIMIE PARISTECH, Chatou
Daniel‐[email protected]
Innovative approaches for CIGS Solar Cells
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Institut Phovoltaïque Ile de FranceInstitute for the Energy Transition
Both academic and industrial partners : CNRS, Ecole Polytechnique, EDF, TOTAL, Air Liquide, Horiba Jobin Yvon, Riber
Web site :www.ipvf.fr
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Associated laboratories
Research programs :Silicon, thin films, New Concepts, characterization and theory, economic and social aspects
« 30/30/30 for modules »
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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New building in construction (mid 2017 ‐ 8000 m2)
D Lincot IW‐CIGSTech 7 23‐06‐2016 EUPVSEC
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CIGS 22.6 %
Looking to the past for the future : An evolutionaryapproach- CIGS a case exemple !
potassium
gradientsCBD CdSSodiumtemperaturegallium
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Verre
Mo (0,5 m)
P CuInSe2 (2 m)
N+ CdS:In/Ga (1‐2 m)
Not to scale
N type layerEvaporation
P type layerEvaporation
Contacts
Back contact
Substrate
<1980
8%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Verre
Mo (0,5 m)
P Cu(In,Ga)Se2 (2 m)
N+
(Cd,Zn)S:In/Ga (1‐2 m)
6
Not to scale
N type layerEvaporation
P type layerEvaporation
Contacts
Back contact
Substrate
1985
12%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Verre
Mo (0,5 m)
P Cu(In,Ga)Se2
ZnO(Al)
6
Not to scale
ZnO(Al)By Sputtering
P type layerBy coEvaporation3 stage process
Contacts
Back contact
Substrate
1994
Ga Rich
In rich
Ga rich
CdS by Solution (CBD)
15%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Glass or metal/plastic foil
Mo (0,5 m)
P CuIn0.7 Ga0.3 Se2 (2 m)
N‐ CdS 10‐ 50nm
N++ ZnO : Al (1 m)
Not to scale
Window Layer
Buffer layer
Absorber layer
Contacts
Back contact
Substrate
N‐ ZnO (100 nm)
P+ Mo(S,Se)2 (10‐100 nm)
2010‐2015
N Cu(In,Ga)3Se5 (?)
Na+
Ga
Ga
In
20%
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Verre/polymère/métal
Mo (0,5 m)
P CuIn0.7 Ga0.3 Se2 (2 m)
N‐ CdS ou Zn(O,S) 10‐ 50nm
N++ ZnO : Al (1 m) Couche fenêtreconductrice
Couche tampon
Couche absorbante
Contacts
Contact arrière
Substrat
N‐ ZnO (100 nm)
P+ Mo(S,Se)2 (10‐100 nm)
2016
N GIGS + K
Na+
Ga
Ga
In
K+
22%
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Selected innovative approaches
‐ Low indium consumption with high efficiencies‐ Microcell concept‐ Ultrathin CIGS
‐ New deposition methods‐ Electrodeposition
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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New Concept : CIGS microcells under concentrationIntroduced by IRDEP in 2010
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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21,3 %
2013
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016,EUPVSEC
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Addressing the concept of separated microcells
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Good edge passivation
Edge recombination < 1.3 104 cm/s
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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16D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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S. Jutteau et al. (2015)
Design of the optical component
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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S. Jutteau et al. (2015)
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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‐ Last results presented at IEEE (2016) and EMRS, to be published)‐ studies of electrodeposited microcells(bottom up)
‐ HZB : Spatially controlled microcells by coevaporation (APL 2016)‐ ZSW : 23% from top down CIGS (poster this conference)
On going :
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Ultrathin Cu(In,Ga)Se2 based solar cells
N. Naghavi1,4, F. Mollica2,4, J. Gofard3,4, J. Possada1,4, A. Duchatelet2,4, M. Jubault2,4, F. Donsanti2,4, A. Cattoni3,4, S. Collin3,4, P.P. Grand2,4, J. J. Greffet5, D. Lincot1,4
1 CNRS, IRDEP – UMR 7174, 6 quai Watier, 78400 Chatou, France2 EDF R&D, IRDEP, 6 quai Watier, 78400 Chatou, France3 Laboratoire de Photonique et de Nanostructures (LPN,CNRS), Marcoussis, France4 IPVF, Institute Photovoltaïque d’Ile de France, 8 rue de la Renaissance, 92160 Antony, France5Institut d’Optique CNRS, Campus Polytechnique, RD 128, 91127 Palaiseau cedex, France
E‐MRS spring meeting 2016
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Influence of back contact on 0.1 micron thick cells
Conditions Voc Jsc FF Efficiency
W/O mirror 0.44 15.2 73.9 4.97
W mirror 0.45 21.6 74.2 7.24
W mirror + BSF 0.66 21.6 77.6 11.1
W mirror+ BSF + p++
0.77 20.8 77.3 11.9
With ligthtrapping*(Ref 2 micron)
0.77(0.6)
30(32.5)
77(79.6)
17(15.7)
* Estimated values
From: D. Lincot, 7th International Symposium on Innovative Solar CellsJanuary 19‐20, 2015
Tokyo, Japan
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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What is our goal ?
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To explore the possibility of reducing the thickness CIGS layer down to 0.2µm while maintaining a high efficiency level of solar cells.
Reducing the thickness by 10: Release of In shortage issues & faster Industrial processes
But : fundamental scientific challenges
To maintain high efficiencies : Deposition of hight quality ultrathin CIGS Absorption of light: optical management
Extraction of the charge carriers : electrical management
N. Naghavi ‐ EMRS – 08/05/2016
2‐2,5 µm0,1‐0,2 µm
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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0.4‐0.5 µm
0.3 µm
0.2 µm
2‐2.5 µm
What has been done ?
23
Can we really reach similarefficiencies with a thin CIGS absober<300 nm compared
to a thick one ?
N. Naghavi ‐ EMRS – 08/05/2016
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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0.4‐0.5 µm
0.3 µm
0.2 µm
2‐2.5 µm
What has been done ?
24
N. Naghavi ‐ EMRS – 08/05/2016
*Vermang & al; Prog. Photovolt: Res. Appl. (2014)DOI: 10.1002/pip.2527*Vermang & al; IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 6, NOVEMBER 2014
Introduction of Al2O3 rear surface passivation layer with nanosizedlocal point contacts to reduce recombination at the standardMo/CIGS rear interface
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Calculated Jsc as function of dCIGS for different BC
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Mo
Mo
CIGS
CdSi‐ZnO
ZnO:Al
50 nm70 nm
400 nm
Mo BC : Jsc with thickness
N. Naghavi ‐ EMRS – 08/05/2016N. Dahan & al., Optic express, OPTICS EXPRESS,21/3, 2563‐2580 (2013)
Use of the radiative transfer equation (RTE).
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Deposition process
High efficiencyLow cost
Co‐evaporation2 step process
Electrodeposition+ heat treatement
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Reactive sputtering1 step process:
Providing uniform coatings over large areas.
Comparaison of two CIGS thicknesses : 500 & 300 nm
N. Naghavi ‐ EMRS – 08/05/2016
P4.31.Posada & al. May 5, 2016, 16h
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Solar cell characterizations
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300 nm
370 nm
650 nm
280 nm
550 nm
470 nm
N. Naghavi ‐ EMRS – 08/05/2016
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Comparaison with the litterature
J. Peterson et al., IEEE J. Photovolt., Vol. 3, no. 4, 2013B. Vermang et al., Prog. Photovolt: Res. Appl. 2014K. Kim et al., IEEE J. Photovolt., vol. PP, no. 99, pp. 1 –5, 2012
N. Naghavi ‐ EMRS – 08/05/2016
Sample Process CGI/GGI Thickness(nm)
Efficiency(%)
Jsc(mA.cm‐2)
Voc(mV)
FF (%)
This studyED
+ Se annealing0.94/0.6 370 8.7 19 685 66.8
Petterson, 2013
Coevaporation 0.87/0.46 300 8.3 16.7 672 74.6
Vermang,2014
Coevaporation 0.85‐90 /0.3 400 9.1 23.2 576 67.7
Kim, 2013PVD
+H2Se/H2S annealing
0.87/0.22 250 9.1 21 612 71.1
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Proof of concept of nanostructured mirrors
29
1 µm1 µm
500 nm
Nanoimprint lithography Residual layer removing Au deposition
1 µm 1 µm
N. Naghavi ‐ EMRS – 08/05/2016
GlassGlue
ZnO:Al/iZnO/CdS300 nm CIGS
Spin coatedTiO2Au
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Flat versus nanostructured mirrors
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N. Naghavi ‐ EMRS – 08/05/2016
Jsc 2.3 mA/cm² (from 13.7 to 16 mA/cm²)
Efficiency 30% (from 5 to 6.5%)
dCIGS=300 nm
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Light management in ultra-thin CIGS solar cellsby substituting the back contact
with a TCO-based reflector
Fabien MOLLICA1,4, Marie JUBAULT1,4, Frederique DONSANTI1,4, Anaïs LOUBAS3,4, Muriel BOUTTEMY3,4, Arnaud ETCHEBERRY3,4, Negar NAGHAVI2,4
E‐MRS spring meeting 2016
1 EDF R&D, IRDEP, 6 quai Watier, 78400 Chatou, France2 IRDEP ‐ CNRS – UMR 7174, 6 quai Watier, 78400 Chatou, France3 Lavoisier Institute of Versailles (ILV) – UMR 8180 CNRS – UVSQ, 45 avenue des Etat‐Unis, 78035 Versailles, France4 IPVF, Institute Photovoltaïque d’Ile de France, 8 rue de la Renaissance, 92160 Antony, France
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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• CIGS/SnO2:F with CuMirror
300 nm thick CIGS
Fabien Mollica et al.32
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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What about unconventional deposition methods ?
• Historical view : Chemical bath deposition now a standard ALCVD becoming a standard?
• What about Printing, ElectrodepositionPrinting of CIGS : New results solar frontier (this conference 18.7%)Electrodeposition of CIGS : Nexcis (2015) 17.3 % cell and 14% modules
Emerging fields :
Electrodeposition of buffer and TCO (IRDEP)Electrodeposition of metallic grids (IRDEP)
33D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Zn2+ + ½ O2
ZnO
I
E
II IIII
The photoelectrochemical deposition approach of ZnO
Zone I : kinetic controlZone II: photocurrent generation control-CB injectZone III: Photocurrent + dark current control (defeDecomposition of CIGS)
distance
pote
ntia
l
ZnO
CIGS
I-E cuve
electrolyte
Darklight
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2015
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D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Starting industrial Transfert(2015)
D. Lincot,IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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38D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Process
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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40D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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41D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC
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Conclusions
Besides efficiency perpectivesthe CIGS technology offers wide range of innovative avenues
Two examples presented here :
‐ Low dimensionality solar cells , new paradigm‐ much less indium at higher efficiencies !
‐ Alternative deposition methods : electrodeposition
ThanksADEME, ANR, EU projectsZSW, EMPAIRDEP and IPVF teams
D. Lincot, IW‐CIGSTech 7 , 23‐06‐2016, EUPVSEC