TomDavinson

School of Physics & Astronomy

Fir

st

SP

ES

Sch

oo

l o

n E

xp

eri

men

tal T

ech

niq

ues

wit

h R

ad

ioacti

ve B

ea

ms

INF

N L

NS

Cata

nia

–N

ov

em

ber

2011

Ex

pe

rim

en

tal C

ha

lle

ng

es

Le

ctu

re 3

: F

utu

re S

ys

tem

s

THE

UNIVERS

I TY

OF

EDINBU

RGH

Outline

Applic

ation S

pecific

Inte

gra

ted C

ircuits (

AS

ICs)

AID

AM

US

T II

HIN

P16C

/32C

Ne

w e

xperim

enta

l te

chniq

ues

HE

LIO

S

Case for ASICs

•F

utu

re N

ucle

ar

Ph

ysic

s A

pplic

ations

dete

cto

r are

as 1

00-1

000s c

m2

str

ip p

itches ~

0.5

mm

1000s c

hann

els

of

instr

um

enta

tion r

eq

uire

d•V

LS

I IC

technolo

gy

(CM

OS

)lo

w n

ois

ehig

h d

ensity

low

po

we

rlo

w (

per

ch

ann

el) c

ost

…in

princip

le

•W

idely

use

dP

art

icle

Ph

ysic

sS

pace

X-r

ay

imagin

g•

Princip

al app

lications

Min

ima

lly io

nis

ing p

art

icle

s (

MIP

s),

X-r

ays

an

d lo

w e

nerg

y γ-

rays

Em

phasis

on p

ositio

n info

rmation (

e.g

. ~

10

µm

)E

xce

llent

S/N

ratios

hig

h e

ffic

iency

dete

ction

low

rate

‘fa

lse’hits …

import

ant

for

larg

esys

tem

s

ASICs: Reality Check

The B

ad N

ew

s (

and t

here

’s q

uite a

bit)…

•C

MO

S d

esig

n e

nviro

nm

ent

passiv

es t

em

pera

ture

& v

olta

ge d

ep

end

ent

are

a c

onstr

ain

s c

om

pone

nt

valu

es

para

sitic

eff

ects

poor

contr

ol of

absolu

te c

om

ponent

valu

es

•M

odelli

ng em

piric

al data

requir

ed

tim

e c

onsum

ing

•E

ntr

y costs

MP

W –

share

d N

RE

costs

, hig

her

pro

ductio

n c

osts

dedic

ate

d –

hig

h N

RE

costs

, lo

wer

pro

ductio

n c

osts

•R

isk

•C

MO

S p

roduction p

rocess lifetim

e•

Lim

ited d

ynam

ic r

ange ~

2,0

00:1

(cf.

RA

L108 ~

100,0

00:1

)•

AS

IC c

hannel pitch c

onstr

ain

s d

ete

cto

r str

ip p

itch

The r

ealit

y is t

hat

there

are

sig

nific

ant

desig

n a

nd e

ngin

eeri

ng

limitatio

ns

…com

pro

mis

e w

ill b

e n

ecessary

.

AID

A:

intr

od

ucti

on

Advance

d I

mpla

nta

tion D

ete

cto

r A

rra

y (A

IDA

)

UK

colla

bora

tio

n:

Univ

ers

ity o

f E

din

burg

h,

Un

ivers

ity o

f Liv

erp

ool,

ST

FC

Dare

sbu

ryLabora

tory

& S

TF

C R

uth

erf

ord

Apple

ton L

abora

tory

•S

uperF

RS

/FA

IR•

Exo

tic n

ucle

i ~

50 –

200M

eV

/u•

Impla

nt

–deca

y corr

ela

tions

•M

ulti-G

eV

imp

lanta

tio

n e

vents

•S

ubsequ

ent

low

-energ

y deca

ys•

Tag e

vents

for

gam

ma a

nd n

eutr

on d

ete

cto

r arr

ays

Dete

cto

r: m

ulti-

pla

ne S

i D

SS

D a

rra

yw

afe

r th

ickness 1

mm

8cm

x 8

cm

(1

28

x12

8 s

trip

s)

or

24cm

x 8

cm

(384

x12

8 s

trip

s)

Instr

um

enta

tio

n:

AS

IClo

w n

ois

e (

<12

keV

FW

HM

), low

thre

shold

(0.2

5%

FS

R)

20G

eV

FS

R p

lus

( 20M

eV

FS

R o

r1G

eV

FS

R)

fast

overload r

ecovery

(~

µs)

spectr

oscop

y p

erf

orm

ance

tim

e-s

tam

pin

g

ASIC Design Requirements

Sele

cta

ble

ga

in20

1000

2000

0M

eV

FS

RLo

w n

ois

e12

600

5000

0keV

FW

HM

energ

y m

easure

ment

of

impla

nta

tion a

nd d

ecay e

vents

Sele

cta

ble

thre

shold

< 0

.25 –

10%

FS

Robserv

e a

nd m

easure

low

ene

rgy β

, β

dete

ction e

ffic

iency

Inte

gra

l no

n-lin

earity

< 0

.1%

and d

iffe

rential non-l

ine

arity

< 2

% f

or

> 9

5%

FS

Rspectr

um

ana

lysis

, calib

ration,

thre

shold

dete

rmin

atio

n

Auto

nom

ous o

verloa

d d

ete

ction &

recovery

~ µ

sobserv

e a

nd m

easure

fast

impla

nta

tion –

de

cay c

orr

ela

tion

s

Nom

inal sig

nal pro

cessin

g t

ime <

10

µs

observ

e a

nd m

easure

fast

de

cay –

decay

co

rrela

tio

ns

Receiv

e (

transm

it)

tim

esta

mp d

ata

corr

ela

te e

vents

with d

ata

fro

m o

ther

dete

cto

r syste

ms

Tim

ing t

rigger

for

coin

cid

ence

s w

ith o

ther

dete

cto

r sys

tem

sD

AQ

rate

man

age

me

nt,

neutr

on T

oF

Schematic of ASIC Functionality

Note

–A

SIC

will

als

o e

valu

ate

use o

f dig

ital sig

na

l pro

cessin

g

Pote

ntial a

dva

nta

ges

•deca

y –

deca

ycorr

ela

tio

ns t

o ~

200ns

•puls

e s

ha

pe a

naly

sis

•balli

stic d

eficit c

orr

ection

•A

nalo

gue in

pu

ts left

edge

•C

ontr

ol/outp

uts

rig

ht

edge

•P

ow

er/

bia

s t

op a

nd b

ott

om

•16 c

hann

els

per

AS

IC

•P

roto

types d

eliv

ere

d M

ay

20

09

MP

W r

un

100 d

ies d

eliv

ere

d

•F

unctional te

sts

at

ST

FC

RA

L O

K

court

esy S

TF

C R

AL

AID

A A

SIC

: T

op

level d

esig

n

AID

A A

SIC

court

esy S

TF

C R

AL

AID

A A

SIC

sim

ula

tio

n:

exam

ple

01

23

45

67

89

10

11

12

13

14

15

I_LF

fdbk=

0

I_LF

fdbk=

6.4

I_LF

fdbk=

12.8

1.0

0E

-04

1.1

0E

-04

1.2

0E

-04

1.3

0E

-04

1.4

0E

-04

1.5

0E

-04

1.6

0E

-04

1.7

0E

-04

1.8

0E

-04

1.9

0E

-04

2.0

0E

-04

No

ise

[V

rm

s]

Sh

ap

ing

Tim

e (

fro

m 0

.5u

s to

8u

s)

AID

A r

ms N

OIS

E:

I_L

Ffd

bk v

s S

hap

ing

Tim

e (

Cd

et=

4.7

pF

, Ib

ias_p

reA

mp

=8)

1.9

0E

-04-2

.00E

-04

1.8

0E

-04-1

.90E

-04

1.7

0E

-04-1

.80E

-04

1.6

0E

-04-1

.70E

-04

1.5

0E

-04-1

.60E

-04

1.4

0E

-04-1

.50E

-04

1.3

0E

-04-1

.40E

-04

1.2

0E

-04-1

.30E

-04

1.1

0E

-04-1

.20E

-04

1.0

0E

-04-1

.10E

-04

Optim

um

AS

IC c

ontr

ol para

mete

rs identified b

y sim

ula

tion

court

esy

ST

FC

RA

L

AS

IC C

on

tro

ls

Fix

ed

hig

h-e

ne

rgy (

HE

C)

eve

nt

(61

0p

C/1

3.9

Ge

V)

follo

we

d b

y t

hre

e M

EC

eve

nts

(1

5p

C,

30

pC

, 4

5p

C):

th

e A

SIC

re

co

ve

rs a

uto

no

mo

usly

fro

m t

he

ove

rlo

ad

of

the

L-M

E c

ha

nn

el a

nd

th

e s

eco

nd

eve

nt

is r

ea

d c

orr

ectly.

Inp

ut

sig

nals

(vo

ltage s

tep

capaciti

ve-c

ouple

d)

Pre

am

p b

uff

ere

d o

utp

ut

(Low

-Med

ium

Energ

y C

hannel)

“R

an

ge”

sig

nal

Hig

h =

hig

h-e

nerg

y channel

activ

e

“D

ata

Read

y”

sig

nal

Hig

h E

nerg

y (

HE

C)

+ M

ed

ium

En

erg

y (

ME

C)

Fir

st

va

lue

(co

nsta

nt)

giv

en

by

the

hig

h-e

ne

rgy c

ha

nn

el (H

EC

), s

eco

nd

by t

he

me

diu

m

en

erg

y c

ha

nn

el (M

EC

)

Inp

ut

sig

nals

(vo

ltage s

tep

capaciti

ve-c

ouple

d)

“R

an

ge”

sig

nal

Hig

h =

hig

h-e

nerg

y channel

activ

e

“D

ata

Read

y”

sig

nal

An

alo

go

utp

ut

(peak-h

old

m

ulti

ple

xed o

utp

ut)

Hig

h E

nerg

y (

HE

C)

+ M

ed

ium

En

erg

y (

ME

C)

FE

E A

ss

em

bly

Seq

uen

ce

AID

A h

ard

ware

•S

yste

ms inte

gra

ted p

rod

uctio

n h

ard

wa

re a

vaila

ble

-bench &

in-b

eam

tests

in p

rogre

ss

Mezzanin

e:

4x

16 c

ha

nne

l A

SIC

sC

u c

over

EM

I/R

FI/lig

ht

scre

en

coolin

g

FE

E:

4x

16-b

it A

DC

MU

X r

ea

dout

(not

vis

ible

)8x

octa

l 50M

SP

S 1

4-b

it A

DC

sX

ilin

x V

irte

x5

FP

GA

550M

Hz P

ow

erP

C 4

40 C

PU

core

–Lin

ux

OS

Gbit

eth

ern

et,

clo

ck,

JT

AG

port

sP

ow

er

FE

E w

idth

: 8cm

Pro

toty

pe –

air c

oolin

gP

roduction –

recircula

ting

coola

nt

Pro

toty

pe A

IDA

En

clo

su

re

-D

esig

n d

raw

ings (

PD

F)

availa

ble

htt

p://w

ww

.eng.d

l.ac.u

k/s

ecure

/np-w

ork

/AID

A/

AIDA Mechanical

•M

echanic

al de

sig

n f

or

8cm

x 8

cm

and

24cm

x 8

cm

DS

SS

Ds

is c

om

ple

te

•E

valu

ate

perf

orm

ance o

f 8cm

x 8

cm

desig

n b

efo

re p

roceed

ing t

o m

anufa

ctu

reof

24cm

x 8

cm

desig

n

•D

esig

n c

om

pa

tible

with B

ELE

N, T

AS

, M

ON

ST

ER

, R

ISIN

G,

FA

TIM

A e

tc.

Ben

ch

Tests

of

Pro

toty

pe

Hard

ware

zero

inp

ut

load

(C

D=

I L=

0)

0.1

5m

V r

ms

~ 2

.5keV

rm

sS

i

INL <

0.1

% (

> 9

5%

FS

R )

Tests

with p

uls

er

dem

onstr

ating

inte

gra

l non-l

inearity

and n

ois

eperf

orm

ance o

f 20M

eV

rang

e (

LE

C)

Tests with AIDA ProductionHardware

•R

ealis

tic input

load

ing

CD

~ 6

0pF

, I L

~ 6

0nA

•E

xpecta

tion ~

12keV

FW

HM

High Energy Implantation Events

•S

IS 2

50M

eV

/u 2

09B

i +

degra

der

2m

m A

l +

~2m

air

•S

ignific

ant

balli

stic d

eficit e

ffects

•C

onfirm

s B

ard

elli

mo

del a

nd p

revio

us T

AM

U o

bserv

ations

•Im

plie

s p

ream

p r

isetim

efo

r h

igh e

nerg

y he

avy-

ions >

500ns

(cf.

intr

insic

pre

am

p r

isetim

e~

90ns)

AID

A:

sta

tus

•D

SS

SD

with s

ub-c

ontr

acto

r (M

SL)

-12+

8cm

x 8

cm

pro

ductio

n d

ete

cto

rs d

eliv

ery

Nove

mber

20

11

•P

roduction h

ard

ware

(A

SIC

, F

EE

Mezzanin

e P

CB

, F

EE

PC

B)

has b

ee

ndeliv

ere

d b

y sub-c

ontr

acto

rs

•A

SIC

+ F

EE

Mezzanin

e m

od

ule

assem

bly

-

12 c

om

ple

te

-65+

queued

•F

EE

PC

B Q

A a

ccepta

nce t

ests

-50 c

om

ple

te

-20 q

ueu

ed

-8 w

ith f

aults r

equir

ing f

urt

her

testing

•M

echanic

al de

sig

n a

nd infr

astr

uctu

re (

HV

, P

SU

s,

coolin

g e

tc.)

-dete

cto

r H

V,

FE

E P

SU

s,

coolin

g &

FE

E c

rate

s d

eliv

ere

d

-support

asse

mb

ly U

niv

ers

ity o

f Liv

erp

oo

l w

ork

shop

AID

A:

ou

tlo

ok

•A

IDA

pro

duction h

ard

wa

re w

as a

vaila

ble

for

com

mis

sio

nin

g o

n s

ched

ule

in 2

011/Q

3

•P

erf

orm

ance o

f 20G

eV

& 1

GeV

ranges m

ee

ts s

pecific

ation

-need t

o o

ptim

ise D

SS

SD

-FE

E c

ouplin

g f

or

20M

eV

ran

ge

-pro

gre

ss v

ery

encoura

gin

g

•B

asic

data

me

rge w

ith M

BS

successfu

lly d

em

onstr

ate

d d

uri

ng

AID

A+

LY

CC

A

test

May

20

11

-fu

rther

work

requir

ed

•C

ontinu

ing F

EE

develo

pm

ent

work

in p

rogre

ss

-D

SP

(e.g

. dig

ital C

FD

, M

WD

)

-tim

esta

mp d

istr

ibution h

ard

ware

•D

AQ

soft

ware

develo

pm

ent

work

in p

rogre

ss

-m

igra

ting inte

rface f

rom

Tcl/T

kto

XM

L/S

OA

P (

web-b

ase

d)

-contr

ol and m

anag

em

ent

of

mu

ltip

le F

EE

module

s

-tim

esta

mp-o

rdere

d d

ata

merg

e

Tra

nsla

tio

n –

AID

A is r

eady f

or

early s

cie

nce e

xperi

ments

MUST II

htt

p:/

/ipn

we

b.in

2p3.f

r/~

sep/p

roje

ts/e

xp/m

ust2

/must2

.htm

l

•N

ucle

ar

ph

ysic

s a

pplic

ation

•H

igh-e

nerg

y lig

ht

& h

eavy

ion d

ete

ction

•C

om

posite t

ele

scope (

PID

)S

i D

SS

D ∆

E-

Si(Li) E

1-

CsI(

Tl) E

2

•E

nerg

y &

tim

e s

pectr

oscop

y•

Vacuum

opera

tion

•T

oF

requirem

ents

…B

iCM

OS

technolo

gy

MUST II contd

E.P

olla

cco

et

al.,

EP

J A

25 (

2005)

287

Six

tele

scop

e a

rra

y

35keV

FW

HM

(128 c

h)

10M

eV

/u 5

8N

i +

CD

H t

arg

et

DS

SS

D +

Si(Li) o

nly

∆E

1keV

/ch,

E2keV

/ch

HiRa

G.L

.Engelet

al.,

NIM

A573 (

2007)

41

8M

.S.W

alla

ce

et

al.,

NIM

A583 (

2007)

302

•20x

65

µm

DS

SS

D ∆

E1 +

1500

µm

DS

SS

D ∆

E2

+ 4

cm

CsI(

Tl) E

part

icle

tele

scopes

are

a 6

.25cm

x 6

.25cm

•~

2000 c

hann

els

•hig

h e

nerg

y (~

65M

eV

/u)

tran

sfe

r re

actions

HIN

PC

16 (

Hea

vy

Ion N

ucle

ar

Ph

ysic

s 1

6 c

ha

nnels

) A

SIC

The Bottom Line

Pro

ject

tim

elin

e

•dom

inate

d b

y ‘d

esig

n’, s

imula

tion a

nd t

est

phases

‘if y

ou d

on

’t t

est

it,

it w

on

’t w

ork

’

Pro

ject

costs

•dom

inate

d b

y m

anpo

we

r costs

•A

SIC

cost

is a

fra

ction o

f syste

m/h

ard

ware

cost

rule

of

thu

mb

…2–3

x A

SIC

cost

…and d

id I

me

ntion d

ete

cto

rs?

ASIC Compatible Silicon Strip Detectors

•In

tegra

ted c

ou

plin

g c

apacitors

~100pF

/100V

•In

tegra

ted p

oly

-Si b

ias r

esis

tors

~1-5

0M

Ω•

Str

ip p

itch

AS

IC c

om

patib

le

•D

esig

n c

om

ple

xity

more

photo

ma

sks

hig

her

NR

E c

osts

~$40-6

0k

•P

roduction c

om

ple

xity

more

pro

cessin

g s

teps

low

er

yield

shig

her

costs

~$10-1

5k

•Larg

er

are

a (

6”

wafe

rs)

restr

icte

d r

ang

e o

f th

icknesse

s

from

MS

L t

ype H

HH

(DS

)

HELIOS

•<

2.8

5T

superc

onducting s

ole

noid

ma

gnet

•D

ete

cto

r ∆

ΩC

M~

0.5

sr

•F

urt

her

develo

pm

ents

-upstr

eam

PS

D a

rra

y -

cry

og

enic

gas c

ell

-do

wnstr

eam

Bra

gg d

ete

cto

rB

.P.K

ay

et

al.,

J.

Ph

ys.

312 (

2011)

09

203

4J.C

.Lig

hth

all

et

al.,

NIM

A622 (

2010)

97

htt

p:/

/ww

w.p

hy.a

nl.gov/a

tlas/h

elio

s/inde

x.htm

l4x

6x

~50m

m x

9m

m P

SD

HELIOS

B.P

.Ka

yet

al.,

J.

Ph

ys.

312 (

2011)

09

203

4

Measure

d q

ua

ntities:

Tflig

ht=

Tcyc

, positio

n z

, E

lab

Derive

d q

ua

ntities:

m/q

, E

CM,

θC

M

Eff

ectively

rem

oves k

inem

atic

angula

r re

solu

tion e

ffects

and

avoid

skin

em

atic

com

pre

ssio

n (

mea

sure

zn

ot

θ)

Targ

et

thic

kness r

em

ain

s a

n issue a

s w

ith m

ore

conve

ntion

al dete

cto

rsys

tem

s

12

3

HELIOS

~10

7/s

136X

e +

~150

µg/c

m2

(CD

2) n

B.P

.Ka

yet

al.,

J.

Ph

ys.

312 (

2011)

09

203

4

ASIC Summary

•S

ilicon s

trip

de

tecto

rsperv

asiv

e t

ech

nolo

gy

•A

SIC

sw

ide r

ange o

f applic

atio

ns

sophis

ticate

d d

esig

nhig

h p

erf

orm

an

ce

accessib

le a

nd

aff

ord

able

technolo

gy

•C

ritically

depe

ndent

on

engin

eeri

ng e

xpert

ise

sys

tem

s inte

gra

tion

Further Reading

VLS

I D

esig

n T

echniq

ues f

or

Analo

gand D

igital C

ircuits,

R.L

.Geig

er,

P.E

.Alle

nan

d N

.R.S

trader,

McG

raw

-Hill

, 199

9

Sem

icon

du

cto

r R

adia

tion D

ete

cto

rs,

Gerh

ard

Lutz

, S

pringer

Ve

rlag,

199

9

Sem

icond

ucto

r D

ete

cto

r S

yste

ms,

Helm

uth

Spie

ler,

Oxf

ord

, 2

005

http:/

/ww

w-p

hys

ics.lbl.g

ov/~

spie

ler/

AID

A A

ck

no

wle

dg

em

en

ts

My t

hanks t

o:

ST

FC

DL

P.

Cole

man-S

mith,

M.

Kogim

tzis

, I. L

azaru

s,

S.

Lett

s, P

. M

orr

all,

V.

Puckn

ell,

J.

Sim

pson &

J.

Str

achan

ST

FC

RA

L

D.

Bra

ga,

M.

Pry

dderc

h&

S.

Thom

as

Univ

ers

ity o

f Liv

erp

oo

l

T.

Gra

hn,

P. N

ola

n,

R.

Page,

S.

Ritta

-Antila

& D

. S

eddon

Univ

ers

ity o

f E

din

burg

h

Z.

Liu

, G

. Lota

y&

P.

Woods

Univ

ers

ity o

f B

righto

n

O.

Robert

s

GS

I

F.

Am

ek,

L. C

ort

es,

J. G

erl,

E. M

erc

han,

S.

Pie

triet

al.