Influence of MOSFET Model Form on Boost Converter Characteristics at the Steady State
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Influence of MOSFET Model Influence of MOSFET Model Form on Boost Converter Form on Boost Converter Characteristics at the Characteristics at the Steady State Steady State Krzysztof Górecki and Janusz Krzysztof Górecki and Janusz Zarębski Zarębski Department of Marine Department of Marine Electronics Electronics Gdynia Maritime University, Gdynia Maritime University, POLAND POLAND D E P A R T M E N T F M A R I N E E LE C T R O N I C
description
Influence of MOSFET Model Form on Boost Converter Characteristics at the Steady State. Krzysztof Górecki and Janusz Zarębski Department of Marine Electronics Gdynia Maritime University, POLAND. Outline. Introduction The MOSFET models used in analyses Results of calculations Conclusions. - PowerPoint PPT Presentation
Transcript of Influence of MOSFET Model Form on Boost Converter Characteristics at the Steady State
Influence of MOSFET Model Form Influence of MOSFET Model Form on Boost Converter Characteristics on Boost Converter Characteristics
at the Steady Stateat the Steady State
Krzysztof Górecki and Janusz ZarębskiKrzysztof Górecki and Janusz Zarębski
Department of Marine Electronics Department of Marine Electronics
Gdynia Maritime University, POLANDGdynia Maritime University, POLAND
D EP A R T M E N T
F MARINE ELECTRONIC
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OutlineOutline
IntroductionIntroduction The The MOSFET models used in analysesMOSFET models used in analyses Results of Results of calculationscalculations ConclusionsConclusions
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IntroductionIntroduction Dc-dc converters are commonly used in power supply systems The analysis of dc-dc converters is typically realised with the
use of SPICE The accuracy and duration time of calculations depend on the
form of models of semiconductor devices Most important are the characteristics describing dc-dc
converters at the steady state These characteritics can be obtained using dc or transient
analyses Results obtained from the transient analysis fit better results of
measurements It is know from the literature, that the properties of the
switching transistor strongly influence the characteristics of dc-dc converters
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In the paperIn the paper The boost converter is considered
The analysis of this converter are performed using 5 kinds of MOSFET models: the model of the ideal switch the Dang’s model built-in in SPICE the two-value resistor model the electrothermal model of the two-value resistor the electrothermal hybrid model of the MOS transistor
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The The MOSFET models used in analysesMOSFET models used in analyses Transient analysis till the steady-stateTransient analysis till the steady-state Parameters of the MOS transistor correspond to IRF840 transistorParameters of the MOS transistor correspond to IRF840 transistor
a - the electrothermal hybrid model, b - the isothermal Dang’s model, c - the ideal switch model, d - the isothermal model of the two-value resistor , e - electrothermal model of the two-value resistor
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vDS [V]
i D [
A]
IRF840
a
bc
d
e
vGS = 15 V
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Results of Results of the boost converter investigations (1)the boost converter investigations (1)
• The influence of the pulse duty factor DThe influence of the pulse duty factor D
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0 0,2 0,4 0,6 0,8 1
D
Vou
t [V
]
BOOSTa)
a e
db
cR0 = 20 W
Vin = 6.2 Vf = 108.7 kHz
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0 0,2 0,4 0,6 0,8 1
Dh
[%]
b)
BOOST
R0 = 20 WVin = 6.2 Vf = 108.7 kHz
ab
cd
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a - the electrothermal hybrid model, b - the isothermal Dang’s model, c - the ideal switch model, d - the isothermal model of the two-value resistor , e - electrothermal model of the two-value resistor
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Results of Results of the boost converter investigations (2)the boost converter investigations (2)
• The influence of the load resistance RThe influence of the load resistance R00
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R0 [W]
Vou
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BOOST
D = 0.5Vin = 6 V
f = 100 kHz
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a
bcd
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0,1 1 10 100 1000
R0 [W]h
[%]
BOOSTb)
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d
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D = 0.5Vin = 6 V
f = 100 kHz
a - the electrothermal hybrid model, b - the isothermal Dang’s model, c - the ideal switch model, d - the isothermal model of the two-value resistor , e - electrothermal model of the two-value resistor
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Results of Results of the boost converter investigations (3)the boost converter investigations (3)
• The influence of the frequency fThe influence of the frequency f
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f [kHz]
Vou
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BOOST
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R0 = 20 W
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f [kHz]
h [%
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BOOSTb)
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D = 0.75Vin = 6 V
R0 = 20 W
a - the electrothermal hybrid model, b - the isothermal Dang’s model, c - the ideal switch model, d - the isothermal model of the two-value resistor , e - electrothermal model of the two-value resistor
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Results of Results of the boost converter investigations (4)the boost converter investigations (4)
• The duration time of calculationsThe duration time of calculations
Charac-teristic
Hybrid electro-thermal model
Isother-mal Dang’s model
Ideal switch
Two-value resistor
Electro-thermal two-value resistor
Vout(D) 161.77 125.83 70.28 67.11 87.17
Vout(R0) 366.05 289.55 148.10 126.06 165.24
Vout(f) 281.08 232.69 513.84 418.22 504.78
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ConclusionsConclusions
• The remarks resulting from the investigations performed by the authors:– Using the device electrothermal hybrid model ensures a good agreement
between the calculated and measured characteristics of the considered dc-dc converter in the wide range of changes of the load resistance, the duty-factor and the frequency of the control signal of the MOS transistor.
– For the control signal frequency less than 150 kHz the electrothermal model of the two-value resistor ensures a good agreement between the calculation and measurement results and moreover the analysis time is twice shorter than in the case of the use of the electrothermal hybrid model of the MOS transistor.
– For low values of the signal frequency controlling the MOS transistor and small values of the converter load resistance, selfheating has to be included in the model
– For the high values of the control signal frequency to take to account the MOS transistor inertia should be taken into account
