Infineon IPD50R520CP DS v02 01 En

10
NjbW IPD50R520CP CoolMOS TM Power Transistor Package V*EL;HI <?=JG;E< C;G?I 0 IH M/ Y V3BIG7BEL=7I;9>7G=; V# MIG;C ;:K:I G7I;: V&?=>F;7A9JGG;DI 97F78?B?IN V.8<G;;B;7:FB7I?D=0E&19ECFB?7DI V/ J7B !<?;: 799EG :?D=IE(# "# ! +$ CoolMOS CP is designed for: V& 7G : 1E<IHL?I9>?D=1+.1IEFEBE=?;H V"!+ . $ !<EG *7CF87BB7HI V. 5 +<EG *7CF7BB7HI .".7D: *!"24 0 ;K F7=; Maximum ratings, 7I T \ Y!JDB;HHEI>;GL?H;HF;9?<?;: Parameter Symbol Conditions Unit !EDI?DJEJH:G7?D9JGG;DI I > T = Y! ; T = Y! .JBH;::G7?D9JGG;DI ,$ I >&bf^dW T = Y! K7B7D9>;;D;G=NH?D=B;FJBH; E ;M I > V >> 4 +00 _D K7B7D9>;;D;G=NG;F;I?I?K; t ;L ,$&-$ E ;L I > V >> 4 K7B7D9>;9JGG;DI G;F;I?I?K; t ;L ,$&-$ I ;L ; + - 1 $ # 2: v )Vt GJ==;: D;HH : v )Vt V >M 4 P)‘d %7I;HEJG9;KEBI7=; V AM deSe[U P ! f & O . EL;G :?HH?F7I?ED P eae T = Y! Q -F;G7I?D=7D:HIEG7=;I;CF;G7IJG; T \ T deY u= *&,/ ,&/ /* v,* Value 1&+ .&/ +/ v-* 00 V "1 9N \_Si //* P R >M#a‘$&_Si *(/,* " Q Y&ejb +- ‘= Product Summary Type Package Marking CJ>/*L/,*=J JA’NI,/, /L/,*J JA’NI,/, 0 ;K F7=;

description

as

Transcript of Infineon IPD50R520CP DS v02 01 En

Page 1: Infineon IPD50R520CP DS v02 01 En

NjbW

IPD50R520CP

CoolMOSTM Power Transistor

Package

V�*EL;HI�<?=JG;�E<�C ;G?I�0 IH�M�/ Y

V�3 BIG7�BEL�=7I;�9>7G=;

V�# MIG;C ;�: K : I�G7I;:

V�& ?=>�F;7A�9JGG;DI�97F78?B?IN

V�.8�<G;;�B;7: �FB7I?D=��0 E& 1�9EC FB?7DI

V�/ J7B!<?;: �� ��� � � � ���� �� �� � � �� � � ��� � ��� � �799EG: ?D=�IE�( # "# !+$

CoolMOS CP is designed for:

V�& 7G: ��� �1E<IHL?I9>?D=�1+ .1�IEFEBE=?;H

V�"!+ �.$ !�<EG��*7C F�87BB7HI

V�.5 + �<EG��*7C F� 7BB7HI�.".�7D: ��*!"�24

V"1�9N\_Si //* P

R>M#a`$&_Si *(/,* "

QY&ejb +- `=

Product Summary

Type Package Marking

CJ>/*L/,*=J JA'NI,/, /L/,*J

JA'NI,/,

0 ;K��� �� F7=;�� � � � � �� � �� �

Maximum ratings, 7I�T \� � � �Y!�JDB;HH�EI>;GL?H;�HF;9?<?;:

Parameter Symbol Conditions Unit

!EDI?DJEJH�: G7?D�9JGG;DI I > T =� � � �Y! ;

T =� � � � �Y!

.JBH;: �: G7?D�9JGG;DI,$ I >&bf^dW T =� � � �Y!

� K7B7D9>;�;D;G=N�H?D=B;�FJBH; E ;M I >� � �� �� �V >>� � � �4 +00 _D

� K7B7D9>;�;D;G=N�G;F;I?I?K;�t ;L,$&-$ E ;L I >� � �� �� �V >>� � � �4

� K7B7D9>;�9JGG;DI�G;F;I?I?K;�t ;L,$&-$ I ;L ;

+ - 1$ # 2�: v )Vt �GJ==;: D;HH : v )Vt V >M� � ���� � � �4 P)`d

% 7I;�HEJG9;�KEBI7=; V AM deSe[U P

� !��f � � �& O�

.EL;G�: ?HH?F7I?ED P eae T =� � � �Y! Q

- F;G7I?D=�7D: �HIEG7=;�I;C F;G7IJG; T \�T deY u=�� � ������ � �

*&,/

,&/

/*

v,*

Value

1&+

.&/

+/

v-*

00

V"1�9N\_Si //* P

R>M#a`$&_Si *(/,* "

QY&ejb +- `=

Product Summary

Type Package Marking

CJ>/*L/,*=J JA'NI,/, /L/,*J

JA'NI,/,

0 ;K��� �� F7=;�� � � � � �� � �� �

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; available in Halogen free mold compounda)
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a) non-Halogen free (OPN: IPD50R520CPBT); Halogen free (OPN: IPD50R520CPAT)
Page 2: Infineon IPD50R520CP DS v02 01 En

IPD50R520CP

Maximum ratings, 7I�T \� � � �Y!�JDB;HH�EI>;GL?H;�HF;9?<?;:

Parameter Symbol Conditions Unit

!EDI?DJEJH�: ?E: ;�<EGL7G: �9JGG;DI I M ;

"?E: ;�FJBH;�9JGG;DI,$ I M&bf^dW +/

0 ;K;GH;�: ?E: ;�: v )Vt .$ Vv )Vt +/ P)`d

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2>;GC 7B�G;H?HI7D9;�@JD9I?ED���97H; R eZD= ' ' +&3 E)Q

R eZD; ^WSVWV ' ' 0,

1EB: ;G?D=�I;C F;G7IJG;�

L7K;HEB: ;G?D=�EDBN�7BBEL;: �7I�B;7: HT da^V

� �� �C C ��� �� � � �?D���

<GEC �97H;�<EG�� � �H' ' ,0* u=

Electrical characteristics, 7I�T \� � � �Y!�JDB;HH�EI>;GL?H;�HF;9?<?;:

Static characteristics

> [ T ]V ^e V V * P I ,/* w; /** P

Value

T =� � � �Y!-&2

Values

2>;GC 7B�G;H?HI7D9;�@JD9I?ED���

S_T[W`e

0 ;K��� �� F7=;�� � � � � �� � �� �

"G7?D�HEJG9;�8G;7A: ELD�KEBI7=; V #<L$>MM V AM7* P�I >7,/*�[ ; /** ' ' P

% 7I;�I>G;H>EB: �KEBI7=; V AM#eZ$ V >M7V AM�I >� � �� � �C � ,&/ - -&/

6;GE�=7I;�KEBI7=;�: G7?D�9JGG;DI I >MM

V >M� � � � �4 �V AM� � �4 �

T \� � � �Y!' ' + w;

V >M� � � � �4 �V AM� � �4 �

T \� � � � �Y!' +* '

% 7I;�HEJG9;�B;7A7=;�9JGG;DI I AMM V AM� � � �4 �V >M� � �4 ' ' +** `;

"G7?D�HEJG9;�ED�HI7I;�G;H?HI7D9; R >M#a`$

V AM� � � �4 �I >� � �� �� �

T \� � � �Y!' *&.1 *&/, "

V AM� � � �4 �I >� � �� �� �

T \� � � � �Y!' +&, '

% 7I;�G;H?HI7D9; R A f � � �+ & O�EF;D�: G7?D ' ,&, ' "

0 ;K��� �� F7=;�� � � � � �� � �� �

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IPD50R520CP

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

'DFJI�97F79?I7D9; C [dd ' 02* ' b@

- JIFJI�97F79?I7D9; C add ' -+ '

# <<;9I?K;�EJIFJI�97F79?I7D9;�;D;G=N�

cW^SeWV0$ C a#Wc$ ' ,3 '

# <<;9I?K;�EJIFJI�97F79?I7D9;�I?C ;�

cW^SeWV1$ C a#ec$ ' 0- '

2JGD�ED�: ;B7N�I?C ; t V#a`$ ' -/ ' `d

0 ?H;�I?C ; t c ' +. '

2JGD�E<<�: ;B7N�I?C ; t V#aXX$ ' 2* '

$ 7BB�I?C ; t X ' +1 '

% 7I;�!>7G=;�!>7G79I;G?HI?9H

% 7I;�IE�HEJG9;�9>7G=; Q Yd ' - ' `=

% 7I;�IE�: G7?D�9>7G=; Q YV ' / '

Values

V AM� � �4 �V >M� � � � �4 �

f � � �+ & O

V >>� � � � �4 �

V AM� � � �4 �I >� � �� �� �

R A� � � �� �"

V >>� � � � �4 �I >� � �� �� �

V AM� � �4 �V >M� � �4 �

IE�� � � �4

0 ;K��� �� F7=;�� � � � � �� � �� �

% 7I;�9>7G=;�IEI7B Q Y ' +- +1

% 7I;�FB7I;7J�KEBI7=; V b^SeWSf ' /&, ' P

Reverse Diode

"?E: ;�<EGL7G: �KEBI7=; V M>

V AM� � �4 �I @� � �� �� �

T \� � � �Y!' *&3 +&, P

0 ;K;GH;�G;9EK;GN�I?C ; t cc ' ,.* ' `d

0 ;K;GH;�G;9EK;GN�9>7G=; Q cc ' +&0 ' w=

.;7A�G;K;GH;�G;9EK;GN�9JGG;DI I cc_ ' +- ' ;

+$�( �12"� � �7D: �( # 1"� �

,$�.JBH;�L?: I>�t b�B?C ?I;: �8N�T \&_Si

-$�0 ;F;I?I?K;�7K7B7D9>;�97JH;H�7: : ?I?ED7B�FEL;G�BEHH;H�I>7I�97D�8;�97B9JB7I;: �7H� P ;P7E ;L%f.

0$ C a#ec$�?H�7�<?M;: �97F79?I7D9;�I>7I�=?K;H�I>;�H7C ;�9>7G=?D=�I?C ;�7H� C add�L>?B;�V >M�?H�G?H?D=�<GEC �� �IE�� � � �V >MM(

.$ I M>"I >�: i )Vt "� � � � [ H�V >=^[`]� � � � 4 �V bWS]6V #<L$>MM�T \6T \_Si�?: ;DI?97B�BEL�7D: �>?=>�H?: ;�HL?I9>

V L� � � � �4 �I @7I M�

Vi @)Vt � � � � �� [ H

/$ C a#Wc$�?H�7�<?M;: �97F79?I7D9;�I>7I�=?K;H�I>;�H7C ;�HIEG;: �;D;G=N�7H� C add�L>?B;�V >M�?H�G?H?D=�<GEC �� �IE�� � � �V >MM(

>> ** & > - 2 &

V AM� � �IE�� � �4

0 ;K��� �� F7=;�� � � � � �� � �� �

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IPD50R520CP

1 Power dissipation 2 Safe operating area

P eae7X#T =$ I >7X#V >M���T =� � � �Y!��D 7*

F7G7C ;I;G��t b

0

10

20

30

40

50

60

70

0 25 50 75 100 125 150 175

Pto

t[W

]

TC [°C]

� �[ H

� � �[ H

� � � �[ H

� �C H

� � �C H

>=

100 101 102 103

10-1

100

101

102

I D[A

]

VDS [V]

B?C ?I;: �8N�ED�HI7I;cWd[deS`UW

0 ;K��� �� F7=;�� � � � � �� � �� �

3 Max. transient thermal impedance 4 Typ. output characteristics

R#eZD=$7X#eb��� I >7X#V >M���T \� � � �Y!

F7G7C ;I;G��D=t b)T F7G7C ;I;G��V AM

0

10

20

30

40

50

60

70

0 25 50 75 100 125 150 175

Pto

t[W

]

TC [°C]

� �[ H

� � �[ H

� � � �[ H

� �C H

� � �C H

>=

100 101 102 103

10-1

100

101

102

I D[A

]

VDS [V]

H?D=B;�FJBH;

*(*+

*(*,

*(*/

*(+

*(,

*(/

10-5 10-4 10-3 10-2 10-1 100

10-2

10-1

100

101

Zth

JC

[K/W

]

tp [s]

� �� �4

� �4

� �� �4

� �4

� �4

� �4

� � �4

� � �4

0

5

10

15

20

0 5 10 15 20

I D[A

]

VDS [V]

B?C ?I;: �8N�ED�HI7I;cWd[deS`UW

0 ;K��� �� F7=;�� � � � � �� � �� �

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IPD50R520CP

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I >7X#V >M���T \� � � � �Y! R >M#a`$7X#I >���T \� � � � �Y!

F7G7C ;I;G��V AM F7G7C ;I;G��V AM

� �� �4

� �4

� �� �4

� �4� �4

� �4

� � �4

� � �4

0

2

4

6

8

10

12

0 5 10 15 20 25

I D[A

]

VDS [V]

� �� �4

� �4

� �� �4

� �4

� � �4

1,1

1,2

1,3

1,4

1,5

1,6

1,7

1,8

1,9

2

0 2 4 6 8 10 12 14

RD

S(o

n)[

]

ID [A]

0 ;K��� �� F7=;�� � � � � �� � �� �

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R >M#a`$7X#T \���I >� � �� �� ��V AM� � � �4 I >7X#V AM���PV >Ml8,lI >lR >M#a`$_Si

F7G7C ;I;G��T \

ejb

� � ��

0,2

0,3

0,4

0,5

0,6

0,7

0,8

0,9

1

1,1

1,2

1,3

1,4

-60 -20 20 60 100 140 180

RD

S(o

n)[

]

Tj [°C]

� � �Y!

� � � �Y!

0

5

10

15

20

25

0 2 4 6 8 10

I D[A

]

VGS [V]

� �� �4

� �4

� �� �4

� �4� �4

� �4

� � �4

� � �4

0

2

4

6

8

10

12

0 5 10 15 20 25

I D[A

]

VDS [V]

� �� �4

� �4

� �� �4

� �4

� � �4

1,1

1,2

1,3

1,4

1,5

1,6

1,7

1,8

1,9

2

0 2 4 6 8 10 12 14

RD

S(o

n)[

]

ID [A]

0 ;K��� �� F7=;�� � � � � �� � �� �

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IPD50R520CP

9 Typ. gate charge 10 Forward characteristics of reverse diode

V AM7X#Q YSeW���I >� � �� �� �FJBH;: I @7X#V M>$

F7G7C ;I;G��V >> F7G7C ;I;G��T \

� � �Y!

� � � �Y!� � �Y!�� � �

� � � �Y!�� � �

10-1

100

101

102

0 0,5 1 1,5 2

I F[A

]

VSD [V]

� � � �4

� � � �4

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15

VG

S[V

]

Qgate [nC]

0 ;K��� �� F7=;�� � � � � �� � �� �

11 Avalanche energy 12 Drain-source breakdown voltage

E ;M7X#T \���I >� � �� �� ��V >>� � � �4 V <L#>MM$7X#T \���I >� � �� � �C �

� � �Y!

� � � �Y!� � �Y!�� � �

� � � �Y!�� � �

10-1

100

101

102

0 0,5 1 1,5 2

I F[A

]

VSD [V]

� � � �4

� � � �4

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15

VG

S[V

]

Qgate [nC]

440

460

480

500

520

540

560

580

-60 -20 20 60 100 140 180

VB

R(D

SS

)[V

]

Tj [°C]

0

25

50

75

100

125

150

175

25 75 125 175

EA

S[m

J]

Tj [°C]

0 ;K��� �� F7=;�� � � � � �� � �� �

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Page 7: Infineon IPD50R520CP DS v02 01 En

IPD50R520CP

13 Typ. capacitances 14 Typ. Coss stored energy

C 7X#V >M���V AM� � �4 ��f � � �+ & O E add= X(V >M)

0

1

2

3

4

0 100 200 300 400 500

Eo

ss

[µJ

]

VDS [V]

=add

=cdd

100

101

102

103

104

=[dd

0 100 200 300 400 500

C[p

F]

VDS [V]

0 ;K��� �� F7=;�� � � � � �� � �� �

0

1

2

3

4

0 100 200 300 400 500

Eo

ss

[µJ

]

VDS [V]

=add

=cdd

100

101

102

103

104

=[dd

0 100 200 300 400 500

C[p

F]

VDS [V]

0 ;K��� �� F7=;�� � � � � �� � �� �

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IPD50R520CP

Definition of diode switching characteristics

0 ;K��� �� F7=;�� � � � � �� � �� �0 ;K��� �� F7=;�� � � � � �� � �� �

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IPD50R520CP

PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK)

0 ;K��� �� F7=;�� � � � � �� � �� �0 ;K��� �� F7=;�� � � � � �� � �� �

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Page 10: Infineon IPD50R520CP DS v02 01 En

IPD50R520CP

Published by

Infineon Technologies AG

81726 Munich, Germany

© 2008 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office

#hhh([`X[`Wa`(Ua_$(

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

i t d d t b i l t d i th h b d t t d/ i t i d t i

0 ;K��� �� F7=;�� � � � � � �� � �� �

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

0 ;K��� �� F7=;�� � � � � � �� � �� �

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