Index [cds.cern.ch]...Index 803 electrochemical properties, 287 five-level model, 285, 286 ISA, 286...
Transcript of Index [cds.cern.ch]...Index 803 electrochemical properties, 287 five-level model, 285, 286 ISA, 286...
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Index
ab initio methods, 183, 305, 306, 457,759, 763, 765–773
GW approximation, 762
local density approximation, 766,769–770
self-consistency, 770–771
Abbe criterion, 619
acoustic phonon, 33
ADP, 741
adsorbate, 42
periodic growth, 42–53
AFM, see atomic force microscope
Airy disk, 714
aliasing, 535
alkanethiol, 372, 373
alloy, 55, 109, 334
copper–nickel, 539
FePd, 588, 591, 616
FePt, 588, 616
ferromagnetic, 510
for STM tip, 71
GeSbTe, 583
IV–IV, 409
L10, 616
magnetic, 260
magnetic anisotropy, 517
phase-change, 594, 595, 609
SiGe, 409
surface, 51
tellurium, 595
aluminium, 342
cluster, 214, 215
film, 340
interconnects, 399
aluminium oxide matrix, 335
AM-AFM, 101
amphiphile, 369, 375, 472, 490, 491
hydrophobic tail, 369
polar head, 369
self-assembly, 370, 371
annealing, 59, 60, 63, 248, 375, 388, 485
annihilation operator, 338
anti-bonding state, 190, 270
antibody/antigen recognition, 669, 687,688
antiferromagnetic interaction, 507, 532,536, 537, 588–590, 617
antiferromagnetism, 508, 509, 608
of bulk chromium, 539
aperture SNOM, 133–136
apertureless SNOM, 131–133
argon, 12
cluster, 189
Arrhenius law, 243, 547, 587
artificial atom, 641
artificial muscle, 368
aspect ratio, 160, 161
atomic chain, 342
atomic force microscope, 90–118, 123,133, 136, 173, 594
amplitude modulated, 101
applications, 115–118
approach–retract curve, 104
as nanoindenter, 112
atomic resolution, 107
cantilever, 91–93
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802 Index
contact mode, 94, 98–101diamond tip, 112electromagnetic measurement,
109–111finite size effects, 96for biology, 742force curve, 98–100, 107, 108, 112,
113force measurement, 107–109frequency modulated, 101friction mode, 94, 100–101imaging modes, 92–95in lithography, 20linear resonant mode, 102–103manipulation, 115phase image, 105resolution, 95–98resonant mode, 95, 101–107setup, 91–92shear-force mode, 132tapping mode, 95, 103–107, 132tip, 96, 97, 317tip apex, 105tip–sample interaction, 102, 104topography, 105, 106
ATP, 727hydrolysis, 741
Auger effect, 639autocorrelation function, 716avalanche photodiode, 709Aviram–Ratner model, 472
back-gate configuration, 479ballistic regime, 336, 419band
diagram, 81, 483, 657gap, 200, 261, 270, 409, 640, 762structure, 207, 758, 762, 765
Bardeen approximation, 73BCS mechanism, 216beam spreading, 31, 32benzene, 469, 709
absorption spectrum, 771dithiol, 470
binary coding, 782biological medium, 669, 670, 698, 724,
735–737biological vector, 262, 370biology, 670
biomimetic material, 691biomolecule, 448, 686, 688–691, 697
single, 737–743biophotochip, 669biophotonics, 682, 683, 686, 698–707biosensor, 165, 624–626, 669biotin, 687, 691blinking, 698, 715, 743Bloch
function, 293, 637, 647mode laser, 654theorem, 292wall, 521, 523, 524
block copolymer, 105Bohm–Aharonov effect, 437–439Bohr–Sommerfeld theory, 429Boltzmann
distribution, 755transport, 417
bond cutoff model, 183, 184bonded film, 59, 60bonding state, 190, 270Boolean logic, 782, 783Born–Oppenheimer approximation,
678, 772boron nitride, 301
nanotube, 301–303bottom-up approach, 41, 241, 326,
332–335, 349, 674, 688Bragg mirror, 79, 647–648break junction, 336, 339, 340, 342, 451,
469–471, 475Brillouin zone, 648, 762
first, 183, 294, 647graphene, 295K point, 655
Brownian motion, 727, 729Bruggeman model, 264buckminsterfullerene, 281buffer cell, 442, 443Burger circuit, 44buried dislocation, 59
C60 molecule, 87, 115, 189, 191, 192,261, 280, 282, 285–288, 313, 475,477
chemical properties, 287–288cycloaddition reactions, 289cyclopropanation, 288
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Index 803
electrochemical properties, 287five-level model, 285, 286ISA, 286nonlinear absorption, 285photophysical properties, 285–287solubility, 285structure, 283transport properties, 454–456
Camley–Barnas model, 565–567capillary electrophoresis, 165, 168capillary moulding, 328carbon nanotube, 110, 111, 115,
279–318, 449, 795, 796applications, 313–318armchair, 290, 291, 295–297, 753as probe, 316assembly, 492atomic structure, 280, 319chemical properties, 313chemistry, 317chiral, 290, 291, 298–300, 311, 753chiral angle, 291, 309, 315chiral vector, 291components, 479–489conductance, 312crystal structure, 289–291deposition, 494–496discovery, 281–282, 450doped, 313ductility, 755electron emission, 316electronic structure, 295–300, 319Fermi level, 313filled, 313functionalisation, 317, 318growth, 305–307, 493hardness, 755helicity, see carbon nanotube, chiral
angleinterconnects, 314, 785large scale production, 304, 305, 315matrix memory, 613mechanical properties, 312metallic, 297–299, 312, 487–489MWNT, 301, 303, 305, 308, 312, 316,
317, 753network, 497observation, 308–311properties, 311–313
roll-up vector, 291rope network, 496self-assembly, 300, 305, 315semiconducting, 298–300, 314, 479,
494, 785SET, 486–489sorting, 494stressed, 755, 756switch, 497SWNT, 301, 303–306, 309, 310, 479,
753synthesis, 302–305technology, 785transistors, 785zigzag, 290, 291, 297–298, 753
carborane, 364carotenoids, 469CARS, 714, 736, 737catenane, 355, 366, 476, 478
doubly-interlocked, 356catenate, 354, 356
trefoil knot, 355, 356cavity mode, 627CD, 583, 584, 634CD-R, 583CD-RW, 583, 595cell engineering, 165cellular automata, 498, 789–791, 797,
798game of Life, 789
centrosymmetry breaking, 701, 704,705, 735
charge transfer interaction, 354, 365,367
chemical vapour deposition, 54, 55, 304,306, 315, 493
cholesterol oxidase, 720, 721chromatic aberration, 32chromium, 539
film, 14chromophore, 674, 720chymotrypsin, 725, 727circuit speed, 383citrate, 247, 248, 253, 276, 689
as stabiliser, 251clathrate compound, 191Clausius–Mossotti polarisability, 153closing defect, 189cluster, 49, 57, 179–277, 750
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804 Index
absorption cross-section, 229, 233,235
absorption spectrum, 231, 238, 264,771
aluminium, 214, 215
array, 262–263
assemblies, 252–266
beam, 254–256
bimetallic, 261
cage, 261
chemical reactivity, 750
circular, 191
coalescence, 258–259, 754
cobalt, 250
collective excitations, 225–241
core–shell, 240, 248, 261, 696
covalent, 200, 261, 270–271
covalent binding, 190–191
cubic, 249
cubo-octahedral, 182
deposition, 254–256
diffusion, 257–259
divalent metal, 199
dynamic polarisability, 228, 773
dynamics, 755
electron shell structure, 207–217,221–225
electron supershell structure, 217–225
energy levels, 204
equilibrium shape, 180–193
extinction spectrum, 265
facetted, 249
finite-size effects, 206–241
fluctuations, 200–205, 215
functionalised, 251, 254, 262
gallium, 220, 221, 223
gold, 193, 195, 238–240, 251, 253,254, 256–258, 262, 263, 276
heat capacity, 205
in matrix, 750
ionic binding, 192–193
ionisation potential, 196–197
island, 256–259, 262
Lennard-Jones binding, 259
lithium, 231
magic, 211, 212, 220, 221, 232, 273
magnesium, 203
magnetic, 260–261, 531
mass spectrum, 210, 212–215, 220,223
melting temperature, 193–196,200–202, 215
memory effect, 230, 258metallic, 184, 196–200, 209, 213, 216,
225, 227, 232, 234, 264metallic binding, 184–189metastable, 248molybdenum, 255monovalent, 198multilayer, 248noble metal, 237, 238nucleation, 241–246optical properties, 225–241palladium, 453paramagnetic susceptibility, 202–205parity, 203photoionisation spectrum, 214potassium, 231preparation, 241–251radius, 193–200silicon, 261silver, 205, 238–240, 249, 265silver sulfide, 250size, 258, 269sodium, 209, 212, 215, 219–221, 233,
234soft ionisation, 214spherical, 191, 248stabilisation, 251static polarisability, 228, 230, 231,
234, 236transition metal, 199, 261, 766van der Waals binding, 189, 259
CMOS, 383, 385–391, 497inverter, 386–388, 390–391logic, 390technology, 783, 796transistor, 12
cobalt, 56, 261, 510, 515–517, 561, 586,588
as stabiliser, 305cluster, 182, 183, 250, 547dots, 57, 58, 163film, 526islands, 56, 531nanoparticle, 373, 547nanostructure, 58
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Index 805
ultrathin film, 526, 540coercive field, 588, 591, 608, 615coherence length, 193, 418, 433, 434,
437coherent anti-Stokes Raman scattering,
see CARScohesive energy, 180–181, 184, 186, 267colloid, 179–277
assemblies, 252–266metal, 246–251
colloidal suspension, 371complexation, 354
axial, 357, 358computer architecture, 776–798
2-bit adder, 782, 783binary code, 794bistable circuit, 783defect tolerance, 794–798FPGA, 788interconnects, 780, 782–783memory, 779–781NAND operator, 783, 794new ideas, 786–794NOT operator, 783, 794operator, 780, 782–783parallel processing, 789, 793processing unit, 779, 780, 785reconfigurable, 788–789, 797register, 780, 781von Neumann, 779, 780, 785, 795, 797
conductance, 335, 418, 431, 434drain, 385, 390–393Drude, 432electron gas, 432nanotube transistor channel, 485of carbon nanotube, 312of molecule, 374of nanowire, 335–343quantisation, 336, 432SET, 487single-molecule, 452, 453, 457, 469,
470universal fluctuations, 435–436
conducting multilayer, 532confinement model, 271confocal microscopy, 676, 691, 706, 709,
711–715conformation, 681
dynamics, 719, 724–726
coordination number, 56, 57, 183, 184,186, 187, 257, 269
copper, 45, 237, 529, 538, 539Fermi surface, 537, 538interconnects, 399surface, 56, 57, 86, 331
copper–oxygen stripes, 47core–shell cluster, 240, 248, 261, 696Coulomb
blockade, 342, 420–425, 427, 428, 454,464, 486, 487, 489, 612, 642
oscillations, 421–422, 428regime, 458, 465–469stairs, 454
CQED, 644, 646creation operator, 338cross-linking agent, 688, 689, 691crown ether, 707cryotron, 440crystal
bcc, 516cubic, 516defect, 543fcc, 516growth, 334ionic, 621lattice, 508, 515, 517, 518, 529, 535,
576, 637, 646structure, 751surface, 42–47
cube, 184, 185cubo-octahedron, 183, 185, 266Curie
susceptibility, 205temperature, 508, 617
cyclodextrin, 363, 364cyclophane, 363cytidine, 359cytosine, 359
dangling bond, 4, 190, 191, 200, 271silicon, 87
data processing, 777, 778data storage, 417, 443, 503, 583–618
antiferromagnetically coupling media,588–590
bit, 548, 587, 591, 595–596discrete media, 592–593error rate, 547–548, 599
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806 Index
GMR read head, 585–586grain boundary, 587, 589heat-assisted recording, 591local probe techniques, 584, 593–595longitudinal medium, 585magnetic grain, 586, 587, 592nanoscale bit, 585perpendicularly magnetised media,
590–591phase-change material, 595, 609retention time, 584, 597, 600, 603,
616, 780switching time, 587word, 595–596write time, 618
DDA model, 257de Broglie
relation, 761, 762wavelength, 418, 420
decision-making cell, 442, 443decoherence, 576defect, 656–661
as cavity, 657–660as wave guide, 660–661
delocalised electronic structure, 78demagnetising field, 512–515, 543, 576,
589, 591, 615dendrimer, 349–353, 364, 720
convergent synthesis, 352–353divergent synthesis, 350–352monodispersed, 352
dendron, 352, 353density functional theory, 208, 472, 474,
767–769time-dependent, 771
density of states, 218, 219, 424, 474,511, 538, 557, 560, 561
of single QD, 640semiclassical theory, 221–225
depolarisation factor, 622developer, 6, 8dextran, 108DFT, see density functional theorydiamond, 191, 280–281
AFM tip, 112film, 112, 113structure, 190
diblock copolymer, 371, 374, 375diffraction, 627
by two slits, 141grating, 121, 624, 626, 628, 629limit, 19, 20, 24, 137–142
diffusion, 433, 726–731diffusive regime, 336dimerisation, 343diode
current rectifying, 471laser, 659light-emitting, 639, 659, 674molecular, 449, 471–474NDR, 472
dipole approximation, 226, 228dipole radiation, 143–144, 147–155
near an object, 149–150near nanoparticle, 152–155near plane mirror, 151–152
dislocation, 639, 640network, 45
distributed feedback laser, 631, 654DLVO model, 108DNA, 105, 165, 168, 172, 251, 353, 449,
453, 687, 688, 690, 695, 720, 738computer, 798tile, 498transcription, 740, 742
dodecahedron, 185, 188dodecanethiol, 250DRAM, 584, 596, 604–605, 611, 781
1T-capacitorless, 609–610bit line, 604retention time, 604storage capacity, 605word line, 604
Drudeconductance, 432metal, 621transport theory, 429
Drude–Sommerfeld model, 228, 232,233
dry etching, 11–13DVD, 583, 584, 595, 609dye, 370, 695, 727, 736, 737dysprosium silicide nanowire, 334
Eccles–Jordan flip-flop circuit, 783EELS, 308EEPROM, 596, 601, 611
flash, 601, 602
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Index 807
EFISH, 701elastic energy, 52, 53elastic stress engineering, 58elastomer, 112
viscoelastic phase, 113electric force microscopy, 110electrodeposition, 158, 162, 453electroluminescent diode, 375electrolytic growth transfer, 15–18electron
back-scattered, 31, 32, 34coherence length, 418, 433, 434, 437coherent transport, 456confinement, 79, 532–540, 761delocalisation, 269, 283delocalised, 207, 209, 256, 264effective mass, 760elastically bound, 147energy levels, 209Fermi energy, 418gas, 761heat capacity, 205incoherent transport, 342indistinguishability, 507magnetic moment, 506magnetic susceptibility, 203mean free path, 418, 419, 554, 563,
567, 569mobility, 386, 409, 410numerical simulations, 757–773phase coherence length, 336quantum theory, 757–759spillout, 234–237, 240, 264spin, 203, 506spin diffusion length, 554, 563, 567,
569spin-dependent transport, 557,
559–568transport, 336, 429, 450, 454–470,
511, 773, 795wave function, 69, 72–74, 417–419,
428, 434, 533, 637, 758, 761, 772,773
wavelength, 28weak localisation, 432–434
electron beam lithography, seelithography, electron beam
electron microcolumn array, 29electron microscope, 30
electron–electron interaction, 341, 343,759, 771
electron–hole interaction, 270electron–ion interaction, 223, 225, 237,
759, 769, 771electron–magnon interaction, 560, 562electron–matter interaction, 31electron–phonon interaction, 80, 341,
343, 766Encyclopedia Universalis, 87endoreceptor, 365entangled photons, 628, 644enzyme, 690, 720, 726
detector, 489epitaxy, 15, 17, 257, 332, 591, 636, 639,
640coherent, 50condition, 257, 259incoherent, 50liquid phase, 55molecular beam, 53, 60vapour phase, 55
EPROM, 596, 601ergodic theorem, 436, 685etch mask, see lithography, maskEuler angles, 676, 677, 685Euler theorem, 191, 282evanescent wave, 122, 124–127, 137,
139, 142–143, 623, 624, 631, 651,667, 711
exchangeinteraction, 507, 514, 520–522, 540,
552, 559length, 521–523, 540
excimer laser, 25, 168, 406excitation transfer, 724–726exciton, 270, 677, 695, 766exoreceptor, 365exposure time, see lithography, dose
Fabry–Perot device, 532, 657factory roof structure, 555Faraday law, 17fcc lattice, 45, 46, 183, 187, 190FeRAM, 596, 606–607
bit line, 607Fermi
distribution, 337, 535gas, 758
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808 Index
golden rule, 150, 151, 422–424, 467,681, 683
level, 72, 74, 83, 197, 198, 202, 211,219, 237, 299, 300, 421, 458, 485,534, 557, 560, 610, 611
surface, 535–537, 539wavelength, 234, 240, 264, 336, 418,
419, 430, 433Fermi–Dirac distribution, 202, 273, 423,
565, 635fermion, 207, 273ferrimagnetism, 509ferrofluid, 371ferromagnetic
film, 523, 526interaction, 507, 532, 536, 537metals, 510–511, 517, 536, 542, 559semiconductor, 559
ferromagnetism, 508, 509, 514itinerant, 530
Fick law, 728finite-size effects, 206–241FISH, 694, 697flavin adenine dinucleotide, 720flocculation, 250, 688fluctuations in nanosystems, 200–205fluorescein isothiocyanate, 709fluorescence, 123, 253, 669, 697, 700
as biological marker, 691–695intensity, 682lifetime, 710, 725microscopy, 711multiphoton, 681one-photon, 681, 682, 711quantum yield, 693, 705, 706, 708,
725single-molecule, 137two-photon, 682, 732–734
fluorescence correlation spectroscopy,716–718
fluorescent proteingreen, 673, 720red, 673
fluoroionophore, 700fluorophore, 251, 709, 720, 730, 734fluxon, see magnetic flux quantumFM-AFM, 101force feedback nanomanipulator, 117four-wave mixing, 705
Fowler–Nordheim effect, 602FPGA, 788fractal, 253fractional charge transfer, 457FRAM, 584Franck–Condon approximation, 678Frank–van der Merwe growth, 49Fraunhofer diffraction, 20, 24free-electron model, 341Fresnel diffraction, 20FRET, 678, 724, 725, 727friction, 114friction force microscopy, 94fuel cell, 317fullerene, 261, 279–318, 370
C60, see C60 moleculeC70, 283discovery, 281doped, 752, 769isomers, 282, 283production, 284smallest, 282stability, 283structure, 282–284stuffed, 191
GaAs, 79, 80, 261, 638, 639, 652, 659band gap, 82cavity, 641components, 408mesa, 37nanowire, 334photonic crystal, 164substrate, 58, 59, 640wire, 434–436
gallium cluster, 220, 221, 223GaN, 640gas sensor, 489Gaussian
beam, 34, 35probe, 30
Ge quantum dots, 60gene, 353genetic engineering, 370geometrical optics, 24giant atom, 213giant magnetoresistance, see magne-
toresistance, giantGibbs pressure, 181, 194
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Index 809
Gibbs–Duhem relation, 193Gibbs–Thomson effect, 334GILD, 406glass surface, 134, 170, 372glass transition temperature, 158gold, 33, 45, 115, 196, 237, 330, 336,
538, 624, 697cluster, 193, 195, 238–240, 251, 253,
254, 256–258, 262, 263, 276dielectric function, 238electrode, 111, 469, 470film, 170, 340icosahedron, 190islands, 56, 57, 63, 64loop, 438nanoparticle, 134, 689nanostructure, 57, 63, 116, 117, 691nanowire, 333, 343, 375on AFM tip, 115particle, 632, 633pillars, 18reconstruction, 43, 44, 56, 58shell, 248silver, 238substrate, 173, 257, 258, 454, 456surface, 45, 56, 328, 330, 372, 373,
688vicinal surface, 48, 57wire, 454
golden section, 187GPS, 409grain boundary, 435graphene, 289–291, 319
electronic structure, 292–295first Brillouin zone, 295, 296, 298, 299K point, 298, 299lattice, 292, 293reciprocal lattice, 295transport properties, 293
graphite, 113, 280–281, 333structure, 280substrate, 262, 263surface, 256, 257vaporisation, 303
Green function, 341Green tensor, 150, 153, 154group theory, 681, 701growth modes, 48–52guanine, 359
guanosine, 359guest/host complex, 358, 359gyromagnetic factor, 541
hard disk, 110, 260, 503, 547, 584–593,616, 781
antiferromagnetically coupling media,588–590
capacity, 616discrete media, 592–593magnetic, 585–588perpendicularly magnetised media,
590–591read head, 553recording density, 616
hard-sphere potential, 751harmonic generation, 684, 691, 702, 706,
734–736second, 679, 714, 734–735third, 679, 705, 736
Hartree–Fock theory, 429hcp lattice, 183Hebb rule, 792, 794helicate, 355helium, 246
ion, 30Hellmann–Feynman theorem, 772Helmholtz
energy, 425equation, 138, 139
heteroatomic nanotube, 302heteroepitaxy, 53heterojunction, 336, 339, 408, 409heterostructure, 162, 409
double, 410III–V, 659semiconductor, 764Si/SiGe, 409–411SiGe/Si/SiGe, 409
high-k insulator, 404Hohenberg–Kohn theorem, 767–768hole, 758, 761, 762
mobility, 386, 409, 410holon, 343HOMO, 343, 457, 458, 473–475, 769
delocalised, 472HOPG, 256, 262, 263, 333
substrate, 257Hubbard model, 461
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810 Index
Hückel model, 196Hund rules, 507hybridisation, 190–191, 200, 261, 267,
270, 271, 280, 457, 528, 562hydrogen bond, 353, 354, 359–362, 367hydrophobic interaction, 354, 363–365hyper-Rayleigh scattering, 704hysteresis, 441, 442, 545, 546, 550, 551
icosahedron, 184, 185, 187–189gold, 190
immunoglobulin, 689impurity, 435, 436, 543, 562, 652InAs quantum dots, 58, 59, 79, 80,
636–641, 643, 644laser, 638
inclusion complex, 364, 365indium, 375, 624, 640inelastic electron tunneling spec-
troscopy, 85InP, 261, 408, 409, 638, 652, 659
membrane, 651, 653, 656microlaser, 659nanowire, 495, 496
insulator–metal transition, 264, 269integrated circuit, 383, 386, 783
BiCMOS, 409CMOS, see CMOSdesign parameters, 383design rule, IXhalf pitch, 395
integration density, 260, 263, 383, 410,616
memory, 600, 606, 609, 611molecular memory, 477of Josephson junctions, 445
interdigital electrode, 165interface dislocation, 60iodobenzene, 88ion
bombardment, 11, 54, 246, 263thinning, 36, 37
ion beam etching, 12ion–ion interaction, 772ion–matter interaction, 35iron, 261, 510, 515–517, 561
atoms, 86, 331whisker, 538
island, 419, 422, 531
formation, 49–51, 53, 334growth, 49hexagonal array, 57nucleation, 51, 52, 56periodic growth, 56polarised, 427ramified, 256size distribution, 52stressed, 761
isolated pentagon rule, 283itinerant magnetism, 510–511, 530, 542ITRS roadmap, IX, X, 395–397, 405,
440, 607
Jahn–Teller effect, 216–217jellium model, 208, 210, 211, 220, 221,
223, 225, 232–235Josephson
current, 442–444junction, 440–445
Joule effect, 62, 246, 595, 609
Kelvin force microscopy, 110Kerr effect, 540kinesin, 740, 741Kohn–Sham equations, 208, 768–770koiland, 365Krätschmer–Huffmann process, 284,
302Kretschmann prism, 624Kubo
criterion, 197–200, 202, 269–271model, 202–205, 341
Landau damping, 232, 233Landauer
four-wire formula, 431linear response, 339theory, 337, 430–432, 435
Langevin process, 685, 701Langmuir film, 376Langmuir–Blodgett technique, 375, 472,
490laser ablation, 246, 494latching logic, 440, 442lateral force microscopy, 94latex film, 100, 114lattice mismatch, 49, 50, 53, 258, 259,
332, 529
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Index 811
LCAO method, 292LDOS, see local density of stateslead
nanotube, 114nanowire, 333, 375
LECBD, 256–258, 262, 263Legendre polynomial, 130length scale, 671–673Lennard-Jones potential, 93, 189, 750,
751life, 674life sciences, 671, 674lift-off, 15–16, 33, 158, 162, 168, 328light storage, 648light-emitting components, 639light-emitting diode, 639, 659
GaN, 639organic, 674
lipid bilayer, 720, 726liposomes, 370liquid crystal, 364, 365, 736
display, 370liquid metal ion source, 35liquid-drop model, 180–181, 193–196,
245, 267, 682quantum, 207, 213
lithiumcluster, 231dielectric function, 232
lithography, 3–37, 42, 123, 327, 383additive transfer, 15–18AFM, 20contact, 21–22dip-pen, 115, 116, 491dose, 5, 32DUV, see lithography, EUVelectron beam, 4, 8, 30–35, 158, 168,
327, 452, 453, 493, 592, 593, 630,636, 640, 650, 669
electron projection, 28–29emerging techniques, 157–174, 326,
327EUV, 20, 28, 327, 627far-field techniques, 39FIB, 35–39field stitching, 31industrialisation, 34ion projection, 29mask, 9, 11, 12, 14, 19–21, 25–28, 30
nanoimprint, see nanoimprintingnear-field, 172–173, 328–332, 342next generation, 28parallel writing, 19pixel, 30proximity, 22resolution, 19, 21, 22, 24–26, 33, 38,
39sequential writing, 19, 30soft, 20, 40, 169–172, 327–328subtractive transfer, 9–14transfer, 8write speed, 19, 38X-ray, 18, 327
LLG equation, 541, 549local density approximation, 766,
769–770time-dependent, 232, 233, 238
local density of states, 73, 81, 457localised magnetism, 508–510lock-and-key mechanism, 370, 669, 686logic
circuit, 497gate, 483, 485, 497, 596, 606, 777,
782, 783, 794operator, 782
look-up table, 787–789Lorentz–Lorenz model, 679LTP, 406LUMO, 343, 457, 458, 473–475, 769
delocalised, 472Luttinger liquid, 343
macroscopic quantum tunnel effect, 548macrospin, 540, 576
LLG equation, 541precession, 541–544
Madelungconstant, 192energy, 192
magic cluster, 211, 212, 220, 221, 232,273
magnesium cluster, 203magnetic
alloy, 260anisotropy, 260–262, 515–518,
543–545, 616, 773cluster, 260–261, 531dipole anisotropy, 521
-
812 Index
dipole interaction, 520–522, 524, 589domain, 520, 523, 585domain wall, 520, 523–524dots, 163, 260, 592, 593film, 529, 572–576fingerprint, 436flux quantum, 417, 434, 441, 443hard disk, 585–588head-to-tail wall, 524induction, 504, 623interface anisotropy, 526–531liquid, 371molecule, 548moment, 504–508, 773multilayer, 532–540, 552–572nanostructure, 164, 261RAM, see MRAMrecording, 531recording head, 109semiconductor, 558shape anisotropy, 515, 524, 617storage, 547susceptibility, 271–272tape, 109thin film, 520, 522, 523, 595, 617tunnel junction, 557, 560, 568–572,
607ultrathin film, 523–524
magnetic force microscope, 109, 163magnetisation, 512, 514–516, 520
dynamics, 540–551easy axis, 260, 515, 516, 520, 523,
528, 544, 548, 549easy direction, 516hysteresis, 545, 546, 551LLG equation, 541, 549perpendicular, 590precession, 541–544, 576–578reversal, 544–551, 554, 576–578, 587saturation, 588spin transfer mechanism, 549–551vortex, 521, 522
magneto-opticaldisk, 109response, 123, 540
magnetoconductance, 434–436gold loop, 438
magnetocrystalline anisotropy, 260, 507,509, 510, 515–517, 521, 616
interface, 526–528, 574
uniaxial, 515, 520, 521, 576
magnetoelastic anisotropy, 517
interface, 529–530
magnetoelectronic device, 504
magnetoresistance, 550, 616
curve, 554, 556, 557
giant, 503, 533, 552–556, 560,562–568, 586, 615
tunnel, 556–559, 568–572
magnetoresistive device, 551
magnetoresistive read head, 585, 616
giant, 585–586, 616
magnetostatics, 504–505
magnetostriction, 518–519, 543
magnon, 543
manipulation
of adatoms, 85
of atoms, 41, 86, 87, 331, 369
of molecules, 41, 87, 115, 369
mass memory, 583–595, 781
local probe techniques, 584, 593–595
matrix memory, 584, 595–613
access transistor, 604–608, 611
addressing, 598, 600
atomic scale, 613
bit line, 596, 601, 602
detection transistor, 611, 612
floating gate, 601, 602, 604, 612
gain cell, 611–613
NAND architecture, 602, 603
nanoscale, 599–606
noise, 599
NOR architecture, 602, 603
redundancy, 599
repair, 599
word line, 596, 602
Maxwell’s equations, 647
Maxwell–Boltzmann distribution, 685
Maxwell–Garnett model, 264
MBE, see epitaxy, molecular beam
McCumber parameter, 444
mean field approximation, 759
membrane, 369
cell, 370, 686, 720, 726–731
lipid, 369
memory, 583–618
64-bit, 497
-
Index 813
access time, 584, 600, 604, 606, 615,780
cache, 781cell, 22, 314, 344, 375, 417, 476, 478,
595, 596, 777, 783central, 781computer, 780–781flash, 584, 601, 603, 604hierarchical structure, 780, 781mass, see mass memorymatrix, see matrix memorymicroprobe, 584, 594molecular, 163, 476, 477non-volatile, 477, 553, 598, 599,
601–604, 606NOVORAM, 606on-board, 599plane, 596, 598, 602, 605PLED, 612RAM, 598, 604–606register, 780, 781ROM, 596, 598, 601single-electron, 610–611stability, 584volatile, 604–605
mercury, 199, 200, 269, 270mesophase, 370
lyotrophic, 371mesoscale, 671mesoscopic
device, 417system, 335
metal–insulator transition, 198, 199metal–ligand bond, 354, 361metallic
binding, 184–189carbon nanotube, 113, 297–299, 312,
487–489cluster, 184, 196–200, 209, 213, 216,
225, 227, 232, 234, 253–254, 264magnetic multilayer, 552–572multilayer, 532nanoparticle, 372, 449, 451, 452, 689,
698MFM, see magnetic force microscopemicelle, 369, 370
reverse, 250micro–nano interconnects, 786micro-optics, 173
micro-phase separation, 371, 374micro-squid, 16microcanonical ensemble, 754microcavity, 642, 643, 645–662microcontact printing, 40, 170, 171, 491microdisk, 645microelectronics, IX, 162, 261, 383–413,
783, 784design, 615memory requirements, 600
microfluidicchannel, 165, 168, 495, 496chip, 165device, 170, 172, 627, 662network, 171, 172
microlaser, 646, 659micromagnetism, 173micropillar, 79, 643–645
GaAs/AlAs, 644microprocessor, 22
characteristics, 785micropump, 172microreactor, 370microscale, 671microsegregation, 371microtubule, 740, 741microvalve, 172Mie
classical theory, 226resonance, 226–228, 233, 236–239,
253, 771theory, 241, 265
Miller indices, 42, 45, 182, 187Millipede, 173, 594miniaturisation, IX, 314, 599, 600, 619,
646miscut angle, 46misorientation angle, 59MOCVD, 55molecular
abacus, 87amplifier, 474, 477assembly, 490–492bistable, 476, 478, 613circuit, 490–498components, 450–479, 497conductor, 457–469conformation, 470diode, 449, 471–474
-
814 Index
dipole, 678electronics, 447–499, 795energy levels, 455engineering, 698–707machine, 366–368magnet, 371memory, 163, 476, 477motor, 738, 740, 741nanocage, 361network, 362orbitals, 457–463orientation, 676photonics, 667recognition, 251, 360, 362, 364, 370,
688rectifier, 449rotor, 366, 367shuttle, 366, 367switch, 373tectonics, 362, 363transistor, 477–479triode, 449tweezer, 358, 359wire, 78, 469–471
molecular dynamics simulation, 202,255, 258, 305, 341, 751–755
ab initio, 773integration algorithm, 753–754thermostat, 754–755velocity renormalisation, 755
molecule–metal coupling, 454–456, 459molybdenum cluster, 255monolayer, 49Monte Carlo simulation, 31, 32, 202,
755–757selective sampling, 756
Moore’s law, IX, 383, 395, 784MOSFET, IX, 162, 383–386
bulk punch-through, 392–394, 404buried doping, 394, 404conduction channel, 385doping profile, 383, 393, 394, 405drain, 383electrical parameters, 396gate oxide layer, 383halo, 389, 394, 396, 404inversion layer, 384normally-off, 383–386ohmic regime, 385, 391
on SOI, 412pinch-off voltage, 385pocket, 389, 394, 396quantum effects, 406, 407retrograde doping, 388, 393, 394, 396,
397, 404saturation current, 385saturation regime, 385, 390scaling, 392–400short channel effects, 392–393, 404,
604silicon, 386, 483, 484source, 383space charge region, 384, 392superhalo, 405surface punch-through, 393, 411threshold voltage, 384, 393
Mott transition, 264MRAM, 371, 503, 504, 553, 596,
606–609, 613, 796bit line, 608
multi-quantum well, 656, 659multiphoton microscopy, 731–737multitwinned particle structure, 188,
191multiwalled nanotubes, see carbon
nanotube, MWNT
nano-antenna, 127nano-operator, 785nano-optics, 137, 144, 164nanoarray, 375nanobiophotonics, 667, 670, 686nanocage, 361nanochain, 375nanochannel, 165nanocluster, 186nanocomponents, 778nanocomputing, 776–798nanoconnection, 785nanocrater defect, 263nanodetector, 136nanoelectronics, 261, 383, 416–444
hybrid, 477, 497superconducting, 440–444
nanoembossing, 167–169, 328nanogap, 451, 456, 478, 479nanoimprinting, 20, 40, 158–166, 327,
328, 477, 593
-
Index 815
alignment, 162, 171UV, 166
nanoindentation, 112nanolaboratory, 660, 662nanolithography, 4, 38, 39, 136, 157–174,
329nanomagnet, 371, 551nanomagnetism, 163–164, 504–551
fundamental lengths, 525novel effects, 525–540numerical simulation, 766
nanomemory, 785nanoMOS devices, 400–412nanomoulding, 327, 328nanoparticle
assembly, 690core–shell, 696semiconductor, 697
nanophotonics, 665–745nanopillar, 165, 551, 555, 556nanopore, 335, 451, 453, 469, 471nanoscale, 671nanoscale light source, 136nanosensor, 669, 700nanostencil, 115nanowire, 45, 324–344, 449, 553, 555,
631, 796as electrical contact, 325array, 375as building block, 325assembly, 493bundle, 785electrical conductance, 335–343electrical contacts, 336–342encapsulated, 313fabrication, 326–327InAs/InP, 335InP, 495, 496molecular, 342, 343multilayer, 334self-assembly, 332–334semiconductor, 334silicon, 115, 116, 495ZnO, 336
near-field microscopy, 41, 121–155, 312,327, 328, 330, 332, 336, 627, 633
carbon nanotube tip, 317near-field optical microscope, 122, 123
apertureless, 123, 126–133
tip, 129–131, 135near-field optics, 121–155Néel pair model, 518–519, 528, 574Néel temperature, 508Néel wall, 524Néel–Brown model, 547negative refraction, 633Nernst–Einstein relation, 52neural networks, 791–794, 797
adaptive synapse, 794formal neuron, 791learning dynamics, 792relaxation dynamics, 792synapse, 791
neuron, 686nickel, 113, 247, 261, 510, 515–517, 529,
539, 561columns, 163deposition, 16, 17dots, 316pillars, 593
niobiumjunction, 442, 445layer, 553
nitride, 605nitrogen film, 57NMOS, 385–387, 389–391, 393, 394, 410NMR, see nuclear magnetic resonancenoble metal, 247, 537, 538
cluster, 237, 238non-covalent force, 354non-radiative
coupling, 147, 155recombination, 639transition, 681
nonlinear optical effects, 660normal hydrogen electrode, 247NOVORAM, 606nuclear magnetic resonance, 109, 773nucleotide, 688nucleus, 207numerical aperture, 24, 25numerical simulation, 341, 749–774
accuracy, 773computation time, 773conjugate gradients, 752effective mass method, 760–762electron, 757–773interatomic potential, 750–752
-
816 Index
nanomagnetism, 766Newton–Raphson method, 752potential energy surface, 752–753pseudopotential method, 760,
762–764, 766reliability, 773semi-empirical methods, 759–766steepest descent, 752
octahedron, 184–186, 266truncated, 184, 185
odd–even effect, 197, 205off-axis illumination, 25oligomer
phenyl, 469π-conjugated, 469, 470thiophene, 469
oligophenyleneethylene, 469, 470vinylene, 469
opal, 661, 662optical fibre, 123, 124, 627, 652, 667,
716, 736metal-coated, 133–135multimode, 627sensor, 630single-mode, 627unconditionally secure link, 642
optical multiplexing, 627optical tweezers, 737–740optoelectronic components, 22, 532,
641, 646optronics, 261, 619–662
optical addressing, 630, 631S3PS, 641–644subwavelength aperture, 627–629
orange peel coupling, 575organic
dye, 688nanostructure, 78, 79, 87nanotube, 362transistor, 163
organometalliccomplex, 450, 699compound, 55
organomineral, 699oxynitrides, 404, 605
palladium cluster, 453
parallel process, 19, 117, 161, 173paramagnetism, 587parameter mismatch, 50, 334parity, 681passivation layer, 14Pauli exclusion principle, 273, 429, 507,
758PBG, see photonic band gapPCRAM, 584, 596, 606–609, 613PDMS, 169–172, 327, 328
stamp, 169–171, 496Peierls transition, 343pentacene, 719perceptron, 792percolation threshold, 134, 258perturbation theory, 680, 770pH measurement, 707phase-shift mask, 25, 26, 30phonon, 437, 543, 755phospholipid, 370, 697phosphorescence, 693, 694photobleaching, 692, 709, 715, 716, 743photodepletion, 229photoemission spectroscopy, 458photoevaporation spectroscopy, 229–231photolithography, 20–28, 327
projection, 23–26X-ray, 26–27
photoluminescence, 261, 262, 640, 641,643, 644, 659
photomultiplier, 709photon
antibunching, 719bunching, 719
photon scanning tunneling microscope,123–126
photon sieve, 628–629photonic band gap, 630, 646, 655, 657,
6581D, 6482D, 649–650absolute, 650
photonic crystal, 164, 645–6621D, 647–6482D, 648–650, 652–655allowed bands, 646, 653–656coupling, 652defect engineering, 660dispersion relation, 647, 648, 651
-
Index 817
group velocity, 648, 654, 661laser, 654leaky mode, 652light cone, 651light line, 651mirror, 657optical confinement, 652–653, 656,
660strong confinement, 653vertical confinement, 652, 653weak confinement, 653with defects, 656–661
photopolymerisation, 706photoresist, see resistphotothermal detection, 698π interaction, 354, 365, 367picotechnology, 499plane wave expansion, 137–142, 647plasma, 620
dispersion relation, 622frequency, 622reaction, 246wavelength, 622
plasmon, 126, 226–228, 234, 238, 239,253, 276, 619–633, 698, 773
ATR coupling, 626biochemical sensor, 624–626bulk mode, 621chemical sensor, 624detection, 631, 632dispersion relations, 622–623fibre-optic sensor, 627frequency, 629, 630guide, 126in metal nanoparticle, 629–633light coupling, 622–627polariton, 620propagation length, 624, 633resonance, 624wave guide, 631–633
platinum, 45, 330, 528, 592acetylacetonate, 593nanoparticle array, 16nanowire, 331shell, 248sputtering, 453surface, 56, 57, 531vicinal surface, 333
plexiglass, 7
plumbago, 280PMMA, 7, 31–33, 36, 158, 160, 169,
327, 371, 375, 699bridge, 454resist, 636
PMOS, 385–387, 390–391, 410threshold voltage, 386
point spread function, 713polarisability, 680polarisation tensor, 678, 705polariton, 677polaron, 343polycarbonate, 158polydimethylsiloxane, see PDMSpolyhedron, 266, 282
compactness, 184, 185Euler theorem, 191regular, 185symmetry group, 185
polymer, 674contour length, 108dextran, 108elasticity, 109glass transition, 158luminescent, 720melt, 371molecular weight, 7, 159moulding, 40, 158–160, 166–168photosensitive, 706resist, 4, 158silicone oil, 169under irradiation, 7viscosity, 159wetting properties, 375
polymethylmethacrylate, see PMMApolymolecular assembly, 368–378polystyrene, 371, 375, 737, 738, 741porous matrix, 327, 335, 336porphyrin, 357–360post-exposure bake, 5potassium, 485
cluster, 231dielectric function, 232
prepatterned surface, 41–65, 332, 553,555
prestructured surface, see prepatternedsurface
programmablearchitecture, 497, 602
-
818 Index
ROM, see EPROM, EEPROMswitch, 497
protein, 673, 689, 695, 738, 741conformation, 725fluorescing, 719folding, 725–727
proximity effect, 31, 32proximity optical correction, 25pseudomorphic growth, 50pseudopotential method, 762–764, 766PSTM, see photon scanning tunneling
microscopePt/Co dots, 163Purcell effect, 643–645, 660pyrazine, 358pyridine, 253, 357, 358PZT, 606
quantum box, see quantum dotquantum cascade laser, 631quantum coherent conductor, 338quantum computer, 642, 798quantum confinement, 422, 532–540,
575, 635quantum corral, 86quantum cryptography, 79, 641, 642,
644quantum data processing, 627, 645quantum dot, 50, 58–61, 79, 465, 466,
498, 639, 652, 761, 791absorption spectrum, 640laser, 634, 636, 638plane, 635–637radiative cascade, 642semiconductor, 634–646, 660single, 640–646spectroscopy, 82–84transistor, 163
quantum interference, 428–439, 532, 534Bohm–Aharonov effect, 437–439
quantum size effects, 533, 537–540,575–576
quantum well, 635, 637, 639, 640, 642,652
components, 639laser, 634, 635, 638, 639, 761
quartz, 434template, 167, 168
qubit, 642
radiativecascade, 642coupling, 147, 155damping, 147–149lifetime, 148, 151, 152, 154, 643mode, 650, 651, 653, 654recombination, 639, 643
radiolytic effect, 33RAM, see memory, RAMRaman
microspectrometery, 630scattering, 708, 709, 714, 736spectroscopy, 310, 683, 708spectrum, 773
random walk, 433Rayleigh criterion, 24, 142, 619, 627,
713Rayleigh scattering, 708reactive ion etching, 13–14, 25, 36, 158,
162, 168, 389, 453, 636etch rate, 13
reciprocal lattice, 534, 536–538, 647,648
reconstructed surface, see surfacereconstruction
recording density, 260, 503, 547, 584,585, 588, 594, 595, 616, 780
reduction potential, 247refractive index, 123, 648
contrast, 652, 660, 661high, 652
reorientation transition, 528replication, 687resist, 3–9, 19, 593
contrast, 6, 20contrast curve, 7electrosensitive, 30exposure, 4glass transition temperature, 15inorganic, 33, 37negative, 6, 31polymer, 158positive, 6–8, 31refractive index, 21sensitivity, 5, 7sol–gel, 166spreading, 5
Reststrahlen region, 621Rhodamine 6G, 253, 694, 723
-
Index 819
RKKY interaction, 540, 589, 590, 617RNA, 353, 720, 742ROM, see memory, ROMrotaxane, 356, 366, 367, 476, 478, 497RRK model, 245RSFQ
components, 442–445logic, 417, 440logic gate, 443, 444
ruthenium, 450, 589ruthenium–trisbipyridine complex, 699
sapphire, 640SBT, 606SCALPEL, 29scanning capacitance microscopy, 111scanning electron microscope, 31, 79,
316scanning near-field optical microscope,
173, 715aperture, 133–136apertureless, 131–133, 630
scanning projection printing, 23scanning spreading resistance mi-
croscopy, 111scanning tunneling microscope, 4, 41,
68–89, 123, 173, 309, 311, 329,450, 667, 668
barrier height, 76–77, 82contrast, 75–76elastic tunnel current, 80–82, 374for biology, 741image potential, 77inelastic tunnel current, 84local chemistry, 87–88manipulation, 85–87, 368modelling, 773pulling mode, 85pushing mode, 85resolution, 74–75setup, 71single-molecule observation, 451–452sliding mode, 86spectroscopy, 80–85, 766tip apex, 72, 75, 76tip preparation, 71–72tip–sample interaction, 85–88topography, 70, 374
scattering matrix, 337, 431, 650
scattering sphere model, 127–128Schottky
barrier, 314, 480–483diode, 314gate electrode, 409
screw dislocation, 60selection rules, 681selenium, 470self-assembled monolayer, 4, 170,
491–492, 495self-assembly, 342, 498, 661, 669, 688
by charge transfer, 365by hydrophobic interaction, 363–365FePt nanoparticles, 592, 593hydrogen bonding, 359–362in bulk, 369–371of amphiphiles, 370, 371of carbon nanotubes, 300of nanowire, 332–334on surface, 372–378techniques, 327template effect, 354–359
self-consistent calculation, 208, 232,238, 239, 462, 472, 766, 770–771
self-organisation, see self-assemblyself-organised growth, 79, 636semi-empirical methods, 457semiconductor, 50
band gap, 80–82, 761carbon nanotube, 298–300, 314cavity, 645doping, 109Fermi wavelength, 418ferromagnetic, 559growth, 334heterostructure, 764III–V, 261, 639, 652laser, 634–640membrane, 652multilayer, 532nanoparticle, 449nanostructure, 261quantum dot, 634–646, 660surface, 51valence band, 765
SERS, see surface enhanced Ramanspectroscopy
shaped-beam machine, 34sharp-point effect, 129
-
820 Index
SHG microscopy, 734, 735short channel effects, see MOSFET,
short channel effectsshot noise, 132Sigmund formula, 11, 12silane, 372silanisation, 165, 687, 697silica, 169, 479
insulator, 479metallised grating, 627sphere, 661substrate, 496surface, 372
silicon, 11, 25, 639, 652atomic orbitals, 764band gap, 261band structure, 762, 765bead, 97, 107, 108cluster, 261dangling bond, 87dots, 315etched, 10, 14hydrogenated surface, 4, 330islands, 60lines, 162matrix, 163monocrystalline, 4MOSFET, 385mould, 167, 169nanocrystal, 765, 774nanowire, 115, 116, 330, 495oxidation, 55, 115, 388oxide, 165, 170, 385polycrystalline, 12, 169, 389, 402, 407prepatterned surface, 64probe, 594pyramid, 38substrate, 31, 32, 163, 169, 335, 495surface, 77–79, 88, 107thin film, 60transistor, 163vicinal surface, 61–63, 333wafer, 28, 59, 60, 166, 168, 616, 627
silicon-on-insulator, see SOIsilver, 237, 330, 538, 624, 697
cluster, 205, 238–240, 249, 265dielectric function, 238film, 57islands, 56
nanoparticle, 154, 689nanowire, 333, 375stripes, 633sulfide, 250surface, 372
silylation, 25SIMS, 406single molecule, 136
adhesion, 108component, 449conductance, 452, 453, 457, 469, 470elasticity, 108electrical contact, 450–456electronic device, 173emissions, 144fluorescence, 137fluorescence detection, 707–731level broadening, 457, 458, 463, 470low temperature spectroscopy,
718–719observation, 630, 675spectroscopy, 709, 725strongly coupled, 458–463transistor, 451transport properties, 456–469weakly coupled, 463–469
single-electron memory, 610–611single-electron transistor, 16, 417,
427–428, 449, 611, 612, 617, 794CNT, 486–489conductance, 487stability diagram, 428, 487, 488
single-photon source, 79, 641–644single-walled nanotubes, see carbon
nanotube, SWNTSNOM, see scanning near-field optical
microscopesodium, 237
borohydride, 247cluster, 209, 212, 215, 219–221, 233,
234, 771dielectric function, 233dodecylsulfate, 248magic cluster, 211
soft bake, 5, 158soft matter, 169SOI, 412, 652, 659
layer, 162technology, 411
-
Index 821
transistor, 609, 612solar energy, 303, 304, 306, 360soliton, 343spaser, 633spectral hole burning, 675spectral matching, 643spherical harmonic, 130spillout, see electron spilloutspin, 506spin electronics, 552–572
CIP geometry, 553–556, 563–565CPP geometry, 553–556, 563–565,
567Mott model, 560–562spin accumulation, 554, 567–568two-current model, 559–562
spin glass, 262spin transition complex, 377spin valve, 163, 553, 554, 586spin–orbit interaction, 506–507, 510,
528, 766spin–spin interaction, 766spinon, 343spintronics, see spin electronicsspontaneous emission, 150, 151sputtering, 11, 15, 54, 55
etch rate, 12platinum, 453yield, 11–13
squeezed field, 632SRAM, 483, 584, 600, 605, 606, 781
bit line, 605switch, 596
stacking fault, 44, 45, 56–58stamp, 328Stark effect, 719statistical physics, 755, 756step bunching, 61, 62, 64step edge, 57, 58, 78, 333
defect, 56in magnetic film, 574–575
step-and-flash, 166step-and-repeat projection printing, 23,
28, 29step-and-scan projection printing, 23STM, see scanning tunneling microscopeSTM-assisted CVD, 329stochastic matrix theory, 436Stokes shift, 694
Stone–Walles transformation, 755, 756Stoner model, 510, 559Stoner–Wohlfarth astroid, 545, 546stopping power, 11Stranski–Krastonov growth, 49–51, 58,
334streptavidin–biotin pair, 686, 688, 691subnanoscale, 671supercapacitor, 317superconducting
logic components, 440–442materials, 417MWNT, 312nanoelectronics, 440–444niobium layer, 553transition temperature, 773
superconductor, 109superlattice, 371superparamagnetism, 260, 586, 588,
591, 595, 617supershell, see electron supershell
structuresupersonic beam, 242supramolecular grid, 377supramolecule, 353–368, 674, 686surface
charge, 622chemical potential, 52, 53, 58curvature, 53, 58, 60dehydrogenation, 87, 88diffusion, 53, 57diffusion coefficient, 52dislocation, 44, 45, 50, 56faceted, 45, 48free energy, 46, 48, 49, 52, 53, 180,
258functionalisation, 494, 495functionalised, 669graphite, 256, 257plasmon, 126, 227, 228, 234, 238, 239,
619–633reconstruction, 43, 44, 332, 750relaxation, 42, 59self-organised, 47–48, 56–57stepped, 45stress, 46, 47, 53, 57, 60tension, 180topography, 70, 105, 132, 165vicinal, see vicinal surface
-
822 Index
surface enhanced Raman scattering, 630surface enhanced Raman spectroscopy,
253, 633surface-emitting laser, 645surfactant, 248, 249, 371, 372symbiotic computer, 798synchrotron radiation, 27systems on-chip, 614
tailor-made molecule, 698TBSMA, 269TD LDA, 232, 233, 238technological node, 395tecton, 362, 363template effect, see self-assembly,
template effectTeramac, 789Tersoff–Hamann approximation, 773Tersoff–Hamann theory, 73, 75terthiophene, 469, 470
dithiol, 470tetrahedron, 185THG microscopy, 736thienylenevinylene, 78thioalkane, 254thiol, 115, 116, 170, 173, 328, 330, 372,
374, 469, 688nanowire, 330
Thomas–Fermi approximation, 767Thomas–Reiche–Kuhn sum rule, 235THz source, 631tight-binding approximation, 184, 269,
292, 293, 300, 341, 760, 762,764–766
self-consistent, 472time reversal symmetry, 434, 505, 515time-of-flight spectrometer, 214, 273tin, 375top-down approach, 41, 326, 327, 349,
688top-gate configuration, 480transferability criterion, 763transistor, 110, 157, 375, 761, 777, 783
as switch, 783bipolar heterojunction, 409buried oxide, 411, 412CNTFET, 479–486, 494, 785CNTSET, 486–489, 497FET, 314, 611, 612, 615
FinFET, 412, 413
gate length, IX, 383
geometry, 392
HEMT, 408–409
interconnects, 398–400, 407
leakage current, 388, 390, 392, 394,403, 404, 411
miniaturisation, 784
MOSFET, see MOSFET
multiple gate, 412
new architectures, 408–412
organic, 163
quantum dot, 163
SBFET, 480
SESO, 612
single-electron, 16, 427–428, 449,486–489, 611, 612, 617, 794
single-molecule, 451, 477–479
SOI, 609
spinFET, 558, 560
threshold voltage, 384
ultra-high speed, 18
transition metal, 261, 510
cluster, 199, 766
ferromagnetic, 517, 559
transmission electron microscope, 36,308, 310, 317
triboelectricity, 109, 111
tribology, 112, 591
trimethylammonium bromide, 248
tritopic ligand, 355
truncated octahedron, 186
tungsten
AFM tip, 103
STM tip, 71
tunnel
current, 70, 72–79, 374, 403, 773
double junction, 425–427, 455
effect, 69, 72, 124, 410, 412, 420–422,425, 463, 467, 540, 602
junction, 421, 422, 456, 557, 560,568–572, 607, 612
magnetoresistance, 556–559, 568–572
resistance, 424, 425
Turing machine, 779, 780
twist angle, 60
two-level model, 680, 686, 701
two-photon acid photogenerator, 706
-
Index 823
two-photon fluorescence microscopy,711, 732–734
ultrasonic waves, 33
uncertainty relation, 140, 141, 143, 425
UV-NIL, see nanoimprinting, UV
vacuum vapour deposition, 15, 53
van der Waals force, 33, 93, 99, 109,189, 246, 251
Verlet algorithm, 753
vertical-cavity semiconductor laser, 38
vesicle, 370, 720, 736
bilayer, 370
giant, 735
vicinal surface, 45, 46, 332, 333, 574,576
gold, 48
growth on, 57–58
platinum, 531
silicon, 61–63
virus, 369, 691, 730, 732
VLS synthesis, 306, 307, 327
Volmer–Weber growth, 49
wave guide, 623, 627, 646, 651, 652, 656,660–661
conical, 135, 136metallic, 134, 135surface plasmon, 631–633
wave–particle duality, 761wet etching, 9–11, 330
undercut, 10wetting, 49, 375Wigner function, 677Wigner–Seitz
polyhedron, 183radius, 180, 208, 238unit cell, 183
WKB approximation, 74Woods–Saxon potential, 207, 209, 211work function, 72, 196, 213, 267–268,
464, 483, 485Wulff polyhedron, 182–184, 189, 267
YBaCuO technology, 445
Zeemaneffect, 203energy, 514
zinc, 247