InAs on GaAs self assembled Quantum Dots By KH. Zakeri sharif University of technology, Spring 2003.
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Transcript of InAs on GaAs self assembled Quantum Dots By KH. Zakeri sharif University of technology, Spring 2003.
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InAs on GaAs self InAs on GaAs self assembled Quantum Dotsassembled Quantum Dots
By KH. Zakeri sharif University of technology, Spring
2003
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OutlineOutline
I. introductionII. Method of fabricationIII. Physical properties IV. characterizationV. Modeling & Simulation VI. Application
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I. IntroductionI. Introduction
At first time Reed & coworkers in Texas
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Method of formation Method of formation
I. Etching & lithography II. Selective growthIII. Self assembled ~ self organized
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Growth System– Molecular Beam Epitaxy (MBE)– Metal-Organic Chemical Vapor Deposition (MOCVD)– Chemical Beam Epitaxy (CBE)
Influence of deposition conditions– Deposition mode and misorientation– Growth rate– Group V pressure– High index substrate– Capping layer– Stacking of QDs
QD size and densityLuminescence
StabilityGain saturation
QD size and densityLuminescence
StabilityGain saturation
III. Self assembled
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Quantum Dot GrowthQuantum Dot Growth
• Growth modes depends on
1. Interface energy2. Lattice mismatch
FdvM VW SK
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Placing monolayers of different lattice constants on top of each other can result in a deformation of the deposited layers
Essentially a way of relieving stress on the material
Under a certain set of parameters, you can create certain deformations called Quantum Dots
~2
0-3
0 n
m
Quantum Dot GrowthQuantum Dot Growth
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Physical properties Physical properties I. Density of state
II. Optical absorption & quantum transition
)(2
nmlzyxnlm
EEttt
DOS
),()(3
41(( 5
.
RRPRdRV QD
DQav
j j
jQD
jjQD RRE
RRf
22 ]2/))(())([(
2/))(()(
•III. Energy state
)](9
[2
)2()2(2
0
1 JPPm
HH BLh
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esource drain
gate
N= 2 1
0
N= 2 1
v on
offR1 R2
C1 C2
IV. Coulomb Blockade Effect & coulomb oscillation
Quantum tunneling of electron between source and drain can be blocked If the charging energy
Ec = e2/2C >> kT
c=4R
E = eV –Ec <0: blocked
2Ec =e2/(C1+C2)
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PhotoluminescencePhotoluminescence We can use a laser to excite electrons into the
conduction band Recombination will often produce a photon – the energy
of this photon tells us what state the electron and hole were in
E
EC
EV
laser emitted lightEG emitted light
hν=2.4 eV hν=1.5 eV
(GaAs)
hν≈1.2 eV
(QDs)
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Experimental SetupExperimental Setup
Laser – Argon or HeNe
diffraction grating
Sample dewar
77 Kelvin
Spectrometer
photo-multiplier tube
77 Kelvin
amplifier
I
E / λ
computer
diffraction grating
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InAs Quantum Dots in GaAs InAs Quantum Dots in GaAs [100][100]
229C2a - HeNe
0
500
1000
1500
2000
2500
3000
3500
4000
4500
1.911.841.781.731.681.631.581.541.491.451.421.381.351.321.281.261.231.21.171.151.131.11.08
Photon energy (eV)
Phot
on c
ount
s pe
r 3 s
econ
ds
GaAs
GaAsInAs
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Modeling & simulationModeling & simulation Growth simulation1. Quasi particle 2. Poison – Schrödinger eq.3. Slater transition Energy
Model calculation's
Probability density isosurfaces
for an electron confined in a QD
• Kinetic Mont Carlo
• Molecular Dynamic • Random Deposition
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• Structural properties 1. Quantum confined2. Tight-Bonding 3. Effective mass4. D.F.T
Modeling & simulationModeling & simulation
Squared pyramid S. Ruvimov et al, PRB 51, 14766 (1995)
Truncated pyramid N. Liu et al, PRL 84, 334 (2000)
Lens J. Zou et al, PRB 59, 12279 (1999)
JM Moisson et al, APL 64, 196 (1994)
Ring RJ Warburton et al, Nature 405, 926 (2000)
Elongated pyramidW. Yang et al, PRB 61, 2784 (2000)
Numerical solution
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• Infra-red detector 1. Military 2. Communication 3. Multistage detector4. High Optical gain
• QD laser Diode
• QD transistors & Devices
• QD nano oscillator
Applications Applications
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Thanks for your attention Thanks for your attention