IN5240 Fundamentals of RF Circuit Design Part 3...Institutt for Informatikk IN5240 Fundamentals of...
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Institutt for Informatikk
IN5240 Fundamentals of RF Circuit Design
Part 3
Sumit Bagga* and Dag T. Wisland**
*Staff IC Design Engineer, Novelda AS**CTO, Novelda AS
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Outline
• Wireless communication systems
• Performance metrics of a wireless receiver
• RF building blocks
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Modern RF Front-End (RF-FE)
Fundamentals of Modern RF Receivers© 2015 IEEE International Solid-State Circuits Conference 42 of 63
State of the art modern RF front-end
This is the starting point for the modern wireless receivers
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[Liscidini, ISSCC, 2015]
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RF Blocks: Current Mode
• RF amplification: low-noise transconductance amplifiers (LNTAs) à power-to-current
• Frequency translation à mixer, filter and transimpedance amplifier (TIA)– TIA à current input to voltage output at IF/BB
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
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LNA or LNTA?
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
• LNA– Power-to-voltage conversion à !",$"% → ∞
• High linearity voltage-driven mixer
• LNTA– Power-to-current conversion à !",$"% → 0
• Current mode mixer ß single-stage amplifier
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CG Power-to-Voltage Amplifier
• Inductive loading à tuned
parallel resonance
– Frequency selectivity to remove
out-of-band interferers
– Current magnification (! " #$)– No voltage drop %& ≈ 1/*+
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Feedback & Feedforward (1/2)
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Reactive feedback or feed-forward à !" = $% with no added noise!
[Liscidini, 2006][Li, 2005]
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Feedback & Feedforward (2/2)
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
• [Li, 2005] – !"-boosted CG-LNA with transformer feedforward loop– Feedforward factor is (1 + &'), where n is the turns
ratio and k is the coupling coefficient
• [Liscidini, 2005] – CG-LNA with positive transformer feedback loop– Feedback factor is (1 − &/')
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Inductive Degeneration
Narrowband amplifier (! ≫ 1) with gate ($%) and source ($&) inductors à impedance matching at '(
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Fundamentals of Modern RF Receivers© 2015 IEEE International Solid-State Circuits Conference 45 of 63
Feedback: Inductive degeneration [4]
nf ≈1+ γQ2gmRs
Gm= IoutVin
=Q ⋅gmQ = 12ω0CgsRs
ω0 = 1(Lg+Ls)Cgs
• This LNTA has a narrowband transfer function
• This LNA requires 2 inductors (at GHz frequencygenerally Lg is external)
[Liscidini, ISSCC, 2015]
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Noise-Cancelling
• 2 parallel stages, CG & CS à active balun• Set # = %&'( à noise from CG-stage is mitigated
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Fundamentals of Modern RF Receivers© 2015 IEEE International Solid-State Circuits Conference 47 of 63
Feed-forward: Noise cancelling [6]
Ioutp= 12Rs
(Vs−Vn)
Ioutm= −gm2(Vs+Vn)
Iout= Vs2
kRs
+gm§
©¨
·
¹¸+Vn − k
Rs+gm
§
©¨
·
¹¸
• For k=gmRs, the noise used to implement Rs is cancelledhaving
• The noise introduced by the LNTA can be loweredchoosing gm>>1/Rs
nf ≈1+ γgmRs
Gm= gm
[Liscidini, ISSCC, 2015]
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LNTA Overview
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Fundamentals of Modern RF Receivers© 2015 IEEE International Solid-State Circuits Conference 48 of 63
LNTA comparison
LNTA Bandwidth nf Transconductance Gain
InductiveDegenerated Narrow
Boosted common gate Wide
NoiseCancelling Wide
nf ≈1+ γQ2gmRs
Gm=Q ⋅gm
Gm=1/Rsnf ≈1+ γ1+A
nf ≈1+ γgmRs
Gm= gm
• Inductive degenerated LNTA has the best NF (with Q>1)but is narrow-band
• Noise canceling and inductive degenerated have sameNF if Q=1
[Liscidini, ISSCC, 2015]
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Passive Current Mixer & LPF
• Parasitic capacitance (!"#$) at the o/p of LNTA àmixer o/p impedance
– ↑ !"#$ à ↑ TIA noise
Fundamentals of Modern RF Receivers© 2015 IEEE International Solid-State Circuits Conference 51 of 63
Mixer input impedance [8]
• Since the transistors are in triode, the voltage developedby the RF input current in baseband is up-converted atthe input
• Hence, in first approximation, the ZBB is reported at theinput up-converted around the LO frequency
[Liscidini, ISSCC, 2015]
Fundamentals of Modern RF Receivers© 2015 IEEE International Solid-State Circuits Conference 50 of 63
Mixer output impedance [7]
• The real mixer can be modeled as a combination of anideal mixer and a switched capacitor circuit
• From the baseband the switched capacitances are seenas a resistor that also models the noise of the switches
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Transistor Parameters and Biasing
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
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Unity Gain Frequency
• "# is used for characterizing the achievable GBW product
• For a CS-stage,– %&(() ≈ +,(%-(()./)– 01(/)
02(/)≈ 34
/(5678561)
– 01(/)029(/)
= 1, and substituting ( = =>, ?@ ≈ ABCD(EAF8EAG)
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
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CMOS transistor in strong inversion saturation àsquare law relationship
– "# =%&'()
*
+
,(-./ − -12)*(1 + 6-#/)
– 89 =:;<
:=>?≈
%&'()
*
+
,(-./ − -12) ≈ 2BCDEF
+
,"#
– 89 ≈ 2"#/(-./−-12) ≈ 2"#/-EH
– IJK ≈ LMN/OP
– IJK ≈LQ
RSTJU
MN
V
Transistor Biasing
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
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!" vs #$
0.001
0.01
0.1
1
10
0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000
g m [m
A/V]
Id [mA]
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
!"/$% or &$%/!" Method
• SPICE modeled
• Device parameters (', ), *+) are plotted in terms
of ,-/./ or 2.//,-– For a given value of ,-/./, find values for ',), *+
• Low ,-/./ à strong inversion
• High ,-/./ à weak inversion
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Transistor Efficiency
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[Boser, 2011]
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Speed-Efficiency Product
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Figure of merit is the product of !" and #$/&' to find the optimal value for ()* = (,-- (.
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
g m/I d
*f T [G
Hz/
V]
Vgs-Vt [V]
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Current Density, !"/$
• Square law is only accurate over a narrow region
of strong inversion
• Test-bench comprises single device (common-
source) self-biased with ideal current source
– Change current density by changing %, while keeping
&' fixed for constant power consumption and
() (1/(,&'))
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Current Density Device Operating Mode
• Weak inversion (subthreshold)– High !" efficiency
– $%& ≳ 100 mV for saturation
• Strong inversion– Highest *+, but poor !" efficiency
– $%& > ($.&−$0) ≳ 200 mV for saturation
• Moderate inversion– Compromise between weak and strong inversion
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
!"#, $% and &' vs ()/+
• -./ vs 01/2– -./ ≈ 56
789:;(01/2)
• >? vs 01/2– >? ≈ 789:;
5@6 (-AB − -D)
• ED vs 01/2– ED ∝ @
@
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
! Varying, Constant "#↓ %&
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
0
5
10
15
20
0.01 0.1 1
g m [m
A/V]
Id/W [mA/µm]
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! Varying, Constant "#↑ %&
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
100
200
300
0.01 0.1 1
f T [G
Hz]
Id/W [mA/µm]
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! Varying, Constant "#↑ %&'
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
-100
0
100
200
300
400
500
600
700
800
900
1000
0.01 0.1 1
V ov [
mV]
Id/W [mA/µm]
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Strong vs Weak Inversion
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
! varying, constant "#• Strong inversion à ↑ %& ß ↓ ()* (≈ 2"#/()*)
– Reducing ↓ "#/Wà ↓ ()* à ↑ %&• Weak inversion à %& maxima
– %& ≈ "#/0(1• %& ⊥ !, L
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Swing and !"#
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
• Overdrive voltage, $%& is defined as the minimum $'( required to keep a transistor in saturation– Rule of thumb: $'( = $%& + 50 mV à ↑ .%
• Larger $%& à reduced signal swing– w/ limited supply voltage (sub-1 V) à no headroom for
CG-stage (cascode) à ↓ stage gain à ↑ input referred noise à ↓ SNR
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Trade-Offs
↑ "#$ ↓ "#$↑ Bandwidth
↑ Linearity
↑ Matching
↓ Noise ß &'( devices
↑ Power efficiency
↑ Signal swing
↓ Noise ß RF devices
"#$~*. , ∗ "..
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Summary
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Parameter Impact Factors
!"#Current efficiency, $%/W
()/$% or 2$%/(), +,, noise, headroom, power dissipation
- ß ., $% and à bandwidth (012, 01%)
3 +,, noise and intrinsic device gain
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Key References
1. A. Liscidini, Fundamentals of Modern RF Receivers, ISSCC 2015
2. B. E. Boser, Analog Design Using !"/$% and &' Metrics, 20113. X. Li, S. Shekar and D. J. Allsot, Gm-boosted common-gate
LNA and differential Colpitts VCO/QVCO in 0.18 µm CMOS, 2005
4. A. Liscidini, et. al., Common Gate Transformer Feedback LNA in a High IIP3 Current Mode RF CMOS Front-End, 2006
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga