Impedance Characterization of High Frequency Power ... - KIT
Transcript of Impedance Characterization of High Frequency Power ... - KIT
KIT – University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association
Light Technology Institute (LTI), Department of Electrical Engineering and Information Technology
www.kit.edu
Impedance Characterization of High Frequency Power Electronic Circuits
Michael Meisser , Karsten Haehre, Rainer Kling
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
2 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Introduction: Half-Bridge at Challenges
VD
S,L
S
output: storage elements, resonant tanks
input: ideal voltage source: no resistance, no AC impedance
inductively coupled plasma sources (discharge lamps)
task: higher operating frequency
capacitively coupled plasma sources (discharge lamps)
1 – 100 MHz
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
3 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Challenge 1: Providing Broadband Voltage Source Input
low-switch VDS waveform – frequency band
lower corner frequency: operation frequency
DClink capacitor must provide low impedance between flow - fhigh
f
Zsource
C
ESR
ESL
C
ESR
ESL
flow fhigh
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
4 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Challenge 1: Providing Broadband Voltage Source Input
low-switch VDS waveform – frequency band
lower corner frequency: operation frequency
higher corner frequency: maximum slope
DClink capacitor must provide low impedance between flow - fhigh
f
Zsource
C
ESR
ESL
C
ESR
ESL
flow fhigh
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
5 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
fV
DS
,LS
VS
positive
overshoot
negative
overshoot
Challenge 2: Providing low Series Inductance
LPKG
LPKG
Lw
Lw
ESRClink
ESLClink
Clink
HS
LS
prevent voltage overshoot
lower electromagnetic radiation
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
6 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Impedance Measurement – Information to be Extractedim
pe
da
nce
Z
parpar
par
parpar L
CR
Z
RQ ========
C
L
RR
ZQ ser
serser
serser
1========
Lser
CZ
Rser
Lpar Rpar
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
7 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Impedance Measurement Setup with DC -bias
com
pen
satio
n,
calib
ratio
n
Cblock
Dclamp
HV
inputto
analyser
DC+AC AC
Cblock = NP0 MLCC 1 kV 1.5 nF
8 parallel; XC @ 1 MHz = 13 Ω
Dclamp = 4x antiparallel BAV74
Si RF diodes
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
8 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Impedance Measurement – DC-blocker validation
1.E-03
1.E-01
1.E+01
1.E+03
1.E+05
1.E+07
1.E+09
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08frequency [Hz]
impe
danc
e [
Ω]
120111 impedance Auswer tung.xl s
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
9 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
high
switch
low
switch
CDC
ceramic DClink
capacitors
TR
(backside)
L
(backside,
not assembled)
HF HV
pulse output
DClink input
VS
Vbridge
VDS,LS
VTR,prim
RF resonant pulse generator
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
10 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
CD
S,H
SC
DS
,LS V
DS
,LS
VS
Vb
rid
ge
VT
R,s
ec
VT
R,p
rim
RF resonant pulse generator
Reference: Meisser et. al., PEMD 2010, Brighton
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
11 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Resonant Behaviour Without DC -bias
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
frequency [Hz]
impe
danc
e [
Ω]
120110 impedance Ausw ertung.xls
Coss,LS
+ CDBD,prim
= 15.9 nF
42 nH
Lm
+ Lstray
= 127 µH
VTR
VDS,LS
CDC = 440 nF
Coss,LS
= 13.2 nF4.8 nH
VDS,LS
VTR
with lamp
connected
without lamp
connected
RAC,ser = 0.25 – 0.35 Ω
resonances of freewheeling circuit, both switches off
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
12 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Variance in Switch Output Capacitance
0.1
1
10
0 100 200 300 400 500 600
VDS,LS [V]
capa
cita
nce
[nF
]
C measured
C compl
C low switch only
C high switch only
120108 C variat ion of Coss DE475102N21.xls
HS
LS
Clink Impedance
measurement @
variable DC-bias
constant
voltage
source
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
13 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
RF-half-bridge Decoupling Performance
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
frequency [Hz]
impe
danc
e [
Ω]
DC-blocker: Vbridge = 600 V
DC-blocker: Vbridge = 0 V
Vbridge
120111 impedance Auswer tung.xls
impedance rises to 1 Ω at 2 MHz and 600 VDC
HF DC-rail decoupling performance fails at high voltage(X7R ceramic drift)
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
14 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Summary
Impedance measurement with DC bias:DC-blocker built and characterizedinvestigates RF circuit performance
RF half-bridges:ensure low leg inductanceensure low source impedance
Resonance behaviour of RF half-bridge measured
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08frequency [Hz]
impe
danc
e [
Ω]
120110 impedance Auswertung.xls
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
frequency [Hz]
impe
danc
e [
Ω]
DC-blocker: Vbridge = 600 V
DC-blocker: Vbridge = 0 V
Vbridge
120111 i mpedance Auswer tung.xls
Bottleneck detected: impedance peak due to X7R ceramics
Light Technology Institute (LTI)
KIT, Karlsruhe, Germany
15 29.03.2012 Dipl.-Ing. Michael Meisser, PEMD 2012: “Impedance Characterization of High Frequency Power Electronic Circuits”
Question and Answer Part
Question and Answer Part
Question and Answer Part
Question and Answer Part
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