Impact of the ITRS Metrology Roadmap
Transcript of Impact of the ITRS Metrology Roadmap
Impact of the ITRS MetrologyImpact of the ITRS MetrologyRoadmapRoadmap
Where am Igoing and
how will I getthere ?
Alain Diebold
AGENDAAGENDA• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Metrology
Interconnect
Packaging
Lithography Front End Processes
Process Integration, Devices. & Structures
ITRS Focused RoadmapsITRS Focused Roadmaps
ITRS Cross-cut RoadmapsITRS Cross-cut Roadmaps
Metrology
ES&H
Modeling &Simulation
Defect Reduction Technology
Three ITRS views of the futureThree ITRS views of the future
IC Node and Capability Timing
Logic and DRAM, wireless, SOC
New Process Tool Timing
sub field
stitched fields
stitchingdeflectors
step scan
mask stage
waferstage
scan
step
interferometers
lens
Litho λλλλ, cluster, wafer size
New Materials, Structures, & Process Timing
SECS-IICIM Framework
Compatible
Add-OnSensors
EquipmentControlSystem
ProcessChamber
Add-On Sensors
S1 S2
SensorActuators
connection
connection
FactoryCIM
FDC & MBPCalgorithm execution
Real-Time
MIMO
Embedded
Gate Gate
Drain
Source
High/Low k, USJ, beyond CMOS
ITRS High Level IC TimingITRS High Level IC TimingChip Frequency: Logic - 1999 ITRSChip Frequency: Logic - 1999 ITRS
Chip Frequency
1
10
100
1,000
10,000
100,000
1980 1990 2000 2010 2020
MH
z
U.S. MPU: high perf.
U.S. MPU: cost perf.
Toshiba
ITRS 1999: on-chip local clock (high perf.)
ITRS 1999: on-chip, across chipclock (high perf.)
ITRS 1999: on-chip, across chipclock (cost perf.)
1998 Update: on-chip localclock, (high perf.)
1998 Update: on-chip, across chipclock (high perf.)
1998 Update: on-chip, across chipclock (cost perf.)
b1chf00a1.xls 7/2/99
1999-2011No Change1998 Update-> 1999 ITRS
Potential 10Ghz Limit ?Identified by Design TWG1998 Update-> 1999 ITRS
Historical
Data /
Trends
Source: S'TECH CAG
Historical Cost-Perf Trend: ~ 2x / 2.5 Years
Recent Hi-Perf Historical Trend: ~ 2x / 2 Years
ITRS Hi-Perf Proposed Trend: ~ 2x / 4 Years
ITRS Cost-Perf Trend: ~ 2x / 6 Years
ITRS Roadmap Node TimingITRS Roadmap Node Timing(from Litho TWG Summary
95 97 99 01 04 07 10
1994
1997
1998
Min
imu
m F
eatu
re S
ize
(nm
)
500
350
250
180
130
100
70
50
35
25
IRCAgreement as of
Sept 24,1999
MPU Gate
DRAM Half Pitch
95 97 99 01 04 07 10
13
13
AGENDAAGENDA• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Metrology
OFF-Line
In-SituIn - Line
No Single Business Model for New Metrology?No Single Business Model for New Metrology?
New Materials, Structures, & Process Timing
SECS-IICIM Framework
Compatible
Add-OnSensors
EquipmentControlSystem
ProcessChamber
Add-On Sensors
S1 S2
SensorActuators
connection
connection
FactoryCIM
FDC & MBPCalgorithm execution
Real-Time
MIMO
Embedded
Gate Gate
Drain
Source
High/Low k, beyond CMOS, USJ
New Process Tool Timing
sub fie
ld
stitched fields
stitchingdeflectors
step scan
mask stage
waferstage
scan
step
interferometers
lens
Litho λλλλ, cluster, wafer size
IC Node and Capability Timing
Logic and DRAM, wireless, SOC
Driver New Metrology
Optical & Electrical Metrology for High k, USJ, and low k
157 nm EllipsometrySensors & Clustered Metrology
High Frequency testing of low k
Microscopy is a critical needMicroscopy is a critical needMetrology
Masks
Dense Lines 130nm
130nm Contacts
Semi Dense = 75nm
New devices
SEMSEMDepth of Focus IssueDepth of Focus Issue
Today DoF ~ 0.4 micron2 nm/0.005 rads = 400 nm
Tomorrow DoF ~ 0.02 micron1 nm/0.050 rads = 20 nm
SPM SPM Probe Tip IssueProbe Tip Issue
Dai, et al.,Nature 384, 147 (1996
High Aspect Ratiossub 100 nm trench and via widths
DoFDoF = (resolution) / = (resolution) / (convergence angle) (convergence angle)
David Joy, Univ. of TN
Nanotip fieldemitter
Structure
Coherent illumination
unscattered
scattered
illumination footprint
•At low energies and glancing angles, the reflectivity = 50%
detector
detector
Electron Holography :Electron Holography :a Long Term Potential Solutiona Long Term Potential Solution
Interface ControlInterface Control
Low k / barrieretch stop / low k
Barrier Layer / Cu
14 Å 17 Å 20 Å 29 ÅC-V
HRTEM 14.2 ± 1.7 Å 17.1 ± 2.0 Å 18.6 ± 1.7 Å 26.2 ± 2.2 Å
The Metrology Precision RoadblockThe Metrology Precision RoadblockYear of First Product
ShipmentTechnology Generation
1999180 nm 2000 2001 2002
130 nm 2003 2004 2003100 nm Driver
DRAM 1/2 Pitch 180 165 150 130 120 110 100 D½Logic Isolated Lines 140 120 100 85 80 70 65 M Gate
Microscopy and LithographyMicroscopy resolution(nm) for P/T=0.1 1.4 1.2 1.0 0.85 0.8 0.7 0.65 MPU
Wafer Gate CDControl* 13 12 10 8.5 8 7 6.3 MPU
Wafer CD ToolPrecision* P/T=.2Isolated Lines**
2.6 2.4 2.0 1.8 1.6 1.4 1.3 MPU
Mask Area MetrologyTool Precision P/T=.2 4.8 4.2 3.4 2.8 2.6 2.4 2.2 MPU
Front End P roce sse sLogic Dielectric ThickPrecision 1σσσσ (nm) B 0.0025 0.0024 0.0021 0.0017 0.0016 0.0013 0.0012
MPUGate
2D Dopant ProfileSpatial Resolution (nm) 3 3 3 2 2 2 1.5
MPUGate
In te rconne ctBarrier layerThick (nm)process range (± 3σ σ σ σ )Precision 1σσσσ (nm)
2320%0.08
1920%0.06
1620%0.05
1320%0.04
1120%
0.035
720%0.02
320%0.01
MPU
AGENDAAGENDA• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology& New Structures from PIDS
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Lithography MetrologyLithography Metrology
concave aspheric mirrors
waferconvex
aspheric mirrors
clear aperture
mask
laser
Xe gas jetplasma
EUV radiation
sub fie
ld
stitched fields
stitchingdeflectors
step scan
mask stage
waferstage
scan
step
interferometers
lens
SCALPEL
EUV
193 nm and 157 nmOptical Extension
Research Required Development Underway Qualification/Pre-Production
This legend indicates the time during which research, development, and qualification/pre-production should be taking place for the technology solution.
First Year of IC Production 2002 20051999 2011 2014 2008
248nm
248nm + PSM193nm
193nm + PSM157nmEPLXRLIPL
NarrowOptions
157nm + PSMEPLEUVIPLXRLEBDW
NarrowOptions
EUVEPLIPLEBDW
NarrowOptions
EUVIPLEPLEBDWInnovative Technology
NarrowOptions
Note: Production level exposure tools should be available one year before first IC shipment.
Tec
hnol
ogy
Opt
ions
at T
echn
olog
y N
odes
(D
RA
M H
alf P
itch,
nm
)
180
130
100
70
50
35
DRAM Half Pitch(Dense Lines)
Lithography MetrologyLithography Metrology
Wafer Measurements• CD
• overlay• defects
Mask Measurements• CD
• inspection
Low k Impacts• CD
• overlay• defects
New Litho Tools=
New Masks
• Phase Shift & Optical Proximity Correction
• EUV and Electron Projection
Gate Gate
Drain
SourceVerticalVertical
TransistorTransistor
CD is a FilmCD is a FilmThicknessThickness
Rafi Kleiman
250 nm isolated linesNominal Feature:225nm Isolated
-2
Exp (mJ×cm )®Focus (mm) ¯
8.775 9.450 10.125 10.800 11.475 12.150 12.825 13.500 14.175
-0.1
Feature Size 244 232 248 251 250 266 210 211+0.1
Feature Size 298 301 280 272 270 267 263 249 240+0.3
Feature Size 296 291 276 285 270 243 235 226 236+0.5
Feature Size 289 281 269 264 256 238 233 221 236+0.7
Feature Size 293 276 251 226 195 194
Focus / Exposure MatrixFocus / Exposure MatrixA routine setup metrology requirementA routine setup metrology requirement
Lithography MetrologyLithography MetrologyImprove CD-SEMImprove CD-SEM thru thru 100 100 nm nm nodenode
top downCD-SEM
NEED: Determine CD from Fundamental Model
2D / 3D Information
Intensity Profiles From SNP / SEMIntensity Profiles From SNP / SEM
SEMSNP
Thanks to Joe GriffithThanks to Joe Griffith
Microscopy Issues:Microscopy Issues:CD and Detection requireCD and Detection requirenew microscopynew microscopy
• SEM with resolution required for sub 100 nm has poor Depth of Focus
• 3D Information Required
• Improved throughput required
Today : Depth of focus > 1 micron
SEM
With Future Resolution: Depth of focus << 1 micron
Scatterometry Scatterometry : A Potential Solution: A Potential Solution
Inputlaser beam
Scattered light
Detector
Θ Θ
Resist
ARC
Poly
Parameters
Variables :CD = 270 ± 60nm
Resist thickness = 725 ± 25nmPoly thickness = 2500 ± 350nm
ARC thickness = 80 ± 10nmSidewall angle = 86 ± 2º
Fixed :Pitch
Resist, Poly and ARC optical properties
Signature GeneratorSoftware
ΑΑΑΑll parametercombinations
2-ΘΘΘΘ scatterometer: CDS-2Vary Vary λλλλλλλλ
Fixed angleFixed angle
Advantage of Advantage of scatterometryscatterometryis throughput and sensitivityis throughput and sensitivity
Wavelength variationWavelength variationscatterometryscatterometry can be can be
done on andone on an Ellipsometer Ellipsometer
1717
Offset from CD-SEM by Angle
-20
-10
0
10
20
30
40
50
60
84 85 86 87 88 89 90 91 92
Sidewall Angle
CD
Off
set
(S
cat
tero
met
er -
SE
M) Dense Line Offset
Isolated Line Offset
Is this evidence for loss of Depth of Focus ?
CC Baum and S Farrer
AGENDAAGENDA• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology& New Structures from PIDS
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Key FEP CMOS Scaling ChallengesKey FEP CMOS Scaling Challenges
Hi-K Dielectric
Gate Electrodes
USJ Process
Engineered Contacts
70nm“Beyond CMOS Era?”
250
180
130
100
“CMOSScaling”
2005
1999
S/D Leakage-Short ChannelS/D Leakage-Short Channel
Boron PenetrationBoron Penetration
Poly Depletion LayerPoly Depletion Layer
Highly Doped UltraHighly Doped Ultra Shallow Xj scaling Shallow Xj scaling
Contact ResistanceContact Resistance
Gate Leakage - TunnelingGate Leakage - Tunneling
Hi-Poly ResistanceHi-Poly Resistance
50
35
25
18
2011
2017
Absorbs in visible
zro2-tauclor Optical Constants
Photon Energy (eV)2.0 3.0 4.0 5.0 6.0 7.0
Rea
l(Die
lect
ric C
onst
ant)
, ε 1
Imag(D
ielectric Constant),
ε2
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
ε1ε2
ZrO2
Impact of New FEP MaterialsImpact of New FEP Materials
100 nm
70 nm
130 nmOxynitrideN control
correlate correlate electrical metrology (C-V & I-V)
with optical metrology
Should Future In-Line Ellipsometers include IR or VUV
Issue:Control of Oxynitride, Silicon dioxide/Silicon nitride stacks
and high k with oxynitride interfacial layers
Impact of Ultra-Shallow JunctionsImpact of Ultra-Shallow Junctions
Year
0
5
10
15
20
25E
OT
(A
)
0
10
20
30
40
50
60
70
Xj (
nm
)
EOT (A) 22 17 12 10 8 6 5
Xj (nm) 66 48 40 34 28 25 24
1999 2002 2005 2008 2011 2014 2017
Regime for Si/SiO2 nitride extensions
TransitionRegion
Regime for high-kand metal gates
Regime for Transition Regime for Implant/RTA,LTA Region Elevated S/D
Node (D1/2) 180 130 100 70 50 35 25
GL (nm) 140 86- 90 65 45 30-32 20-22 18
Junction Depth MeasurementJunction Depth Measurementin the FABin the FAB
Objective lens
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RedGeneration laserIR Probe laser
Beamsplitter
Visionsystem
Detector
Detail inwafer
Junction
BeamExcess carriers
Carrier Illumination
Example of new technology from a Startup : Boxer-Cross
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
1.05
290 300 310 320 330 340 350Boxer Cross Junction Depth (A)
Dri
ve C
urr
ent
(arb
. Un
its)
Correlation to drive current(0.18 µµµµm NMOS)
AMD and Boxer-Cross
Transistor Evolution ?Transistor Evolution ?
DeviceStructure
Size
PlanarCMOS
Non-Planar CMOS
New SwitchStructure
0 - 7 years. 7 - 12 years 12 + Years.
TIME
Sub 50nm ?
Transistor and Capacitor MetrologyTransistor and Capacitor MetrologyNew Transistor Designs New Transistor Designs vs vs MetrologyMetrology
Vertical,Vertical, dual channel dual channel Transistor Transistor sub 100nm sub 100nm
CD done by filmCD done by film thickness thickness
Doping in LDD byDoping in LDD by diffusion diffusion
Rafi Kleiman Rafi Kleiman (Lucent) (Lucent)
Gate Gate
Drain
Source
200 nm
Transistor and Capacitor MetrologyTransistor and Capacitor MetrologyVertical Transistor : Gate Dielectric is vertical
Front End Process MetrologyFront End Process MetrologyIn-Situ Needs In-Situ Needs vs vs Integrated Metrology TrendIntegrated Metrology Trend
CooldownChamber
Loadlocks
RTP-RTO wet/dry-RTN-RTA
Nitride (Thin/Thick) Poly (Doped/Undoped)
FutureHigh K
FuturePreclean
ΑΑΑΑ
ΒΒΒΒ
C D
E
F
Clusteredgate dielectric
& electrode
e.g., e.g., Metal MetalGate forces in-Gate forces in-situ metrologysitu metrologyfor dielectricfor dielectric
AGENDAAGENDA• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Interconnect Challenges due to ClockInterconnect Challenges due to ClockFrequency:Frequency:
How long will Copper / low k work?How long will Copper / low k work?
0.1
1
10
100
Rel
ativ
e D
elay
Gate Delay
Local
Global withR t(Scaled Die Edge)
Global w/oR t(Scaled Die Edge)
250180 130 100 70 50
(Fan out 4)
(Scaled)
35
Technology Node (nm)Low k / barrier
etch stop / low k
Low Low κκκκκκκκ Timing Timing
70nm
250
180
130
100
2005
1999
50
35
25
18
2011
2017
κ= 2
.7–3
.5κ=
1.6–2
.2
κ= 1
.5
κ= <
1.5
κ= <
1.5
Porous Insulators
Impact on MetrologyImpact on Metrology
Low κκκκ Porosity
Gradient in % Porosity
Thickness MeasurementNew Optical Modelsfor each low κκκκ stack
CMP ControlR&D for each new
low κκκκ stack
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1
2
3
4
0
50
100
150
200
250
-25 0 25 50 75 100
Time (ns)
Sig
nal
(m
V)
12
3
1 / Acoustic Frequency
Cu 270 MHzCu 270 MHz
ZY
X
Wafer Positioning Stage
Sample
Detector
Aperture
Lens
Probe Laser
Excitation Laser
Neutral Density (ND) Filters
Phase Masks (PM)
Lens
Lens
20x 90 mm Spot Size
~1-2 seconds/point (measurement + data analysis + stage motion)
Excitation LaserDiode-Pumped, Pulsed, Frequency-Doubled Nd:YAG microchip laser. 600 ps Pulse
AlGaAs Diode Laser
Metal Film Thickness and CMP ControlMetal Film Thickness and CMP Control3 methods3 methods
•• ISTS ISTS
••PicosecondPicosecond UltrasonicsUltrasonics
•• X-ray Reflectivity X-ray Reflectivity
•• Near Future : Near Future : Patterned Wafer Capability Patterned Wafer Capability through better modeling through better modeling
Depth of Focus Requirements for Depth of Focus Requirements for LithoLithoCMP Metrology tool should measure what litho tool “sees”
TILT CONTINUOUSLY DURING SCAN
Scanning SteppersScanning Steppers
Site FrontsideScanning*
site reference
Range = SFSRDeviation = SFSD
SEMI STD
SITE LEAST SQUARESREFERENCE PLANE
TILT ONCE PER SITE
Full Field SteppersFull Field SteppersSEMI STD
Site Frontsideleast-sQuaredsite reference
Range = SFQRDeviation = SFQD
AGENDAAGENDA
• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
SENSOR based Integrated MetrologySENSOR based Integrated MetrologyComments on :Comments on :Advanced Process Control - Advanced EquipmentAdvanced Process Control - Advanced EquipmentControlControl
SECS-IICIM Framework
Compatible
Add-OnSensors
EquipmentControlSystem
ProcessChamber
Add-On Sensors
S1 S2
SensorActuators
connection
connection
FactoryCIM
FDC & MBPCalgorithm execution
Real-Time
MIMO
Embedded
AEC/APC GOAL : AEC/APC GOAL :
model based predictive controlmodel based predictive control
based on process and metrologybased on process and metrology
models using in-situ and in-linemodels using in-situ and in-line
measurementsmeasurements
Momentum Shift ? Momentum Shift ?
Now suppliers advocate Now suppliers advocate
Integrated Metrology Integrated Metrology
AGENDAAGENDA
• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Inte
nsi
ty
1400 1600 1800 2000 22000
500
1000
1500
2000
Microcalorimeter
Energy (eV)
W M γγγγW M ζζζζ
1,2
Si Kββββ
W Mββββ
W M αααα 1 2
WSi2 on SiO2
Si Kα α α α 1 21 21 21 2
EDS spectrometer
Martinis, Woolmanet al. NIST
New New MicrocalorimeterMicrocalorimeter X-ray detector X-ray detectorIndustry needs accelerated commercializationIndustry needs accelerated commercialization
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050100150200
-20
-10
0
10
20
30Bulk-like Oxide
Sub-Oxide
Total O Signal
Oxygen Signal (Arb. Units)
Dis
tan
ce (
Å)
Interfacial Oxide
Electron Energy Loss & HA-ADF STEMElectron Energy Loss & HA-ADF STEMInterfacial State changes in O and Interfacial State changes in O and SiSi K edge K edge
Dave Muller - Lucent in G. Temp et al, IEDM 98, p615
High Angle - Annular Dark Field STEMHigh Angle - Annular Dark Field STEM
GaAs
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EELS Spectrometer
Annular Detector
1.4Å
As Ga
1.3Å Scanning
Probe
Objective Lens
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I ∝∝∝∝ Z 2
Z=31 Z=33
Electron Beam
Thin Foil Sample
Image Plane
diffracted beammisses annular detector
Enlarged view of Lattice Planes“on axis” to
electron beam
scatter from atoms or atomic columns
HA-ADF & EELS
2D 2D Dopant Dopant ProfilingProfilingRequires Improved Spatial ResolutionRequires Improved Spatial Resolution
180 nm
source drain
gate
NanopotentiometryNanopotentiometryTEM Electron Holography
IMEC - W.IMEC - W. Vandervorst Vandervorst
SSRMSSRMSCMSCM
R. Kleiman - Lucent
Rau and Ourmazd et al., IHP
GI-XRR at NIST - R. GI-XRR at NIST - R. DeslattesDeslattes, et al, et al
AGENDAAGENDA• ITRS Overview
• Metrology Roadmap Overview
• Lithography Metrology
• Front End Processes Metrology
• Interconnect Metrology
• Integrated Metrology
• Materials & Contamination Characterization
• The Future
Metrology Funding TypesMetrology Funding Types
Innovation Driven• Entrepreneurial • High Market Risk• Longer Dev. Time• Can precede requirement
• “Classic funding”
• Self Risk Mitigation
Application Driven• Equipment Supplier “Customer” Driven • Medium Market Risk• Shorter Dev. Time• Specific Process requirement• Joint funding with Process tool supplier• Co-Risk Mitigation
Market Driven• ex post facto IC “Customer” Driven • Low Market Risk• Market Window• Specific Process requirement• Possible Joint funding with IC Manufacturer• Self Risk Mitigation
~10% ~30% ~ 60%
ZY
X
Wafer Positioning Stage
Sample
Detector
Aperture
Lens
Probe Laser
Excitation Laser
Neutral Density (ND) Filters
Phase Masks (PM)
Lens
Lens
20x 90 mm Spot Size
~1-2 seconds/point (measurement + data analysis + stage motion)
Excitation LaserDiode-Pumped, Pulsed, Frequency-Doubled Nd:YAG microchip laser. 600 ps Pulse
AlGaAs Diode Laser
Barrier/Metal Thickness ISTS
&Picosecond acoustics 157 nm ellipsometry
Si
Light source(Xe, D2, lasers)
polarizeranalyzer
Detector, electronics, computer(PMT, diodes)
monochromator
Ep
s
Polarizationbefore sample
p
s
E(t)
Polarizationafter sample
p
s
p
s
Will Market Risks allow for innovation?Will Market Risks allow for innovation?
Metrology RoadmapMetrology Roadmap
Metrology Timing Metrology Timing vsvsInfrastructure CapabilitiesInfrastructure Capabilities
Process Tool Supplier Development
Pilot Line FAB Startup & Volume Manufacture
Volume Sales of Metrology Tools
Need for Process Tool
Qualification/Preproduction
Development Underway
Typical Potential Solutions Time Line for Process Tool
Research Required
Need for Metrology Tool
Gap in long term R&D Gap in long term R&D Spending + Development Spending + Development Funding ModelFunding Model
Dave Perloff - VeecoDave Perloff - Veeco
2000 Metrology Roadmap2000 Metrology Roadmap
IN-SITU IN-LINE OFF-LINE / AT-LINE
EuropeEurope Alec Reader (Philips)Alec Reader (Philips)WilfriedWilfried VandervorstVandervorst (IMEC) (IMEC)
JapanJapan Fumio Mizuno (Hitachi)Fumio Mizuno (Hitachi)
Taiwan Taiwan Henry Ma (EPISIL)Henry Ma (EPISIL)George Yen (George Yen (ProMOSProMOS))
USUS BobBob Scace Scace (NIST) (NIST)Alain Alain DieboldDiebold (SEMATECH) (SEMATECH)
Acknowledgements
• Will Chism, Jesse Canterbury, Lizz Judge
• Curt Richter and countless others at NIST
• US Metrology TWG
• Metrology and Analytical Lab Managers Councils
• ISMT Litho images - Dan Holladay
• Images of Litho tools - John Canning and Chris VanPeski - International SeMaTech
• FEP overhead - Mike Jackson, Howard Huff, EdStrickland, Rinn Cleavelin
Junction Depth MeasurementJunction Depth Measurementin the FABin the FAB
Objective lens
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RedGeneration laserIR Probe laser
Beamsplitter
Visionsystem
Detector
Detail inwafer
Junction
BeamExcess carriers
Carrier Illumination
Example of new technology from a Startup : Boxer-Cross
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
1.05
290 300 310 320 330 340 350Boxer Cross Junction Depth (A)
Dri
ve C
urr
ent
(arb
. Un
its)
Correlation to drive current(0.18 µµµµm NMOS)
AMD and Boxer-Cross