IMIRISI - GBV
Transcript of IMIRISI - GBV
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 242
Wide Band Gap Semiconductors
Symposium held December 2-6, 1991, Boston, Massachuse t t s , U.S.A.
EDITORS:
T.D. Moustakas Boston University, Boston, Massachusetts, U.S.A.
J.I. Pankove University of Colorado, Boulder, Colorado, U.S.A.
Y. Hamakawa Osaka University, Toyonaka, Osaka, Japan
IMIRISI MATERIALS RESEARCH SOCIETY
Pi t t sburgh, Pennsylvania
Contents
PREFACE xiii
ACKNOWLEDGMENTS xv
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xvi
PART I: DIAMOND GROWTH
•THEORETICAL STUDIES OF DIAMOND SURFACE CHEMISTRY AND DIAMOND-METAL INTERFACES 3
W.E. Pickett, M.R. Pederson, K.A. Jackson, and S.C. Erwin
»GROWTH TECHNIQUE FOR LARGE AREA MOSAIC DIAMOND FILMS 13 R.W. Pryor, M.W. Geis, and H.R. Clark
»CHEMICAL VAPOR DEPOSITION OF DIAMOND FILMS USING WATER: ALCOHOL:ORGANIC-ACID SOLUTIONS 23
R.A. Rudder, J.B. Posthill, G.C. Hudson, D.P. Malta, R.E. Thomas, R.J. Markunas, T.P. Humphreys, and R.J. Nemanich
REMOTE ECR PLASMA DEPOSITION OF DIAMOND THIN FILMS FROM WATER-METHANOL MIXTURES 31
R.K. Singh, D. Gilbert, R. Tellshow, R. Koba, R. Ochoa, J.H. Simmons, P.H. Holloway, J. Rodgers, and K. Buckle
DEPOSITION OF FLAME GROWN DIAMOND FILMS IN A CONTROLLED ATMOSPHERE 37
Kathleen Doverspike, James E. Butler, and Jaime A. Freitas, Jr.
SEQUENTIAL GROWTH OF HIGH QUALITY DIAMOND FILMS FROM HYDROCARBON AND HYDROGEN GASES 43
Darin S. Olson, Michael A. Kelly, Sanjiv Kapoor, and Stig B. Hagstrom
DIAMOND GROWTH FROM SPUTTERED ATOMIC CARBON AND HYDROGEN GAS 51
Michael A. Kelly, Sanjiv Kapoor, Darin S. Olson, and Stig B. Hagstrom
THE CVD DIAMOND NUCLEATION MECHANISM ON Si OVERLAID WITH sp2 CARBON 57
Pehr E. Pehrsson, John Glesener, and Arthur A. Morrish
AN INVESTIGATION INTO THE USE OF A DIFFUSION BARRIER IN THE MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND ON IRON BASED SUBSTRATES 63
Paul S. Weiser, S. Prawer, A. Hoffman, R. Manory, P.J.K. Paterson, and S-A. Stuart
SELECTIVE NUCLEATION OF DIAMOND CRYSTALS ON THE APEX OF SILICON PYRAMIDS 69
R. Ramesham and С Ellis
EFFECT OF LASER IRRADIATION ON CARBON-IMPLANTED COPPER SUBSTRATES 79
Rajiv K. Singh and John Viatella
»Invited Paper
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PART II: ELECTRONIC PROPERTIES OF DIAMOND AND RELATED DEVICES
»DIAMOND AS A MATERIAL IN SOLID STATE ELECTRONICS 87 Victor S. Vavilov
»INVESTIGATION OF CVD-GROWN DIAMOND BY CATHODOLUMINESCENCE IN ТЕМ 97
R.J. Graham
FLUORINE ATOM ADDITION TO THE DIAMOND (111) SURFACE 109 Andrew Freedman, Gary N. Robinson, and Charter D. Stinespring
STM STUDY OF DIAMOND(OOl) SURFACE 115 Takashi Tsuno, Takahiro Imai, Yoshiki Nishibayashi, and Naoji Fujimori
CHARACTERIZATION OF THE Si/DIAMOND INTERFACE 121 K.E. Williams, J.S. Speck, and M.D. Drory
ELECTRONIC STRUCTURE OF N-V CENTERS AND TERAHERTZ SPECTROSCOPY OF DIAMOND 127
D.A. Redman, Q. Shu, S.W. Brown, A. Lenef, Y. Liu, J. Whitaker, S.C. Rand, S. Satoh, K. Tsuji, and S. Yazu
ELECTRICAL PROPERTIES OF FINE GRAIN COMPOSITE CARBON FILMS 133 Hsiung Chen and R.O. Dillon
OPTICAL EVIDENCE OF REDUCTION OF RADIATIVE DEFECTS IN DIAMOND FILMS GROWN BY ACETYLENE-OXYGEN FLAMES 139
J.A. Freitas, Jr., U. Strom, K. Doverspike, CM. Marks, and K.A. Snail
ELECTRONIC DEVICE FABRICATION USING ELECTRON CYCLOTRON RESONANCE ETCHING OF BORON DOPED HOMOEPITAXIAL DIAMOND FILMS 145
S.A. Grot, R.A. Ditizio, G.Sh. Gildenblat, A.R. Badzian, and S.J. Fonash
TANTALUM AND TANTALUM SILICIDE HIGH TEMPERATURE RECTIFYING CONTACTS ON TYPE IIB NATURAL DIAMOND 151
Scott R. Sahaida and Dale G. Thompson
ELECTRICAL PROPERTIES OF SCHOTTKY JUNCTIONS ON HOMOEPITAXIAL FLAME GROWN DIAMOND 161
J.W. Glesener, A.A. Morrish, and K.A. Snail
POLYCRYSTALLINE DIAMOND FILM RESISTORS 165 L.M. Edwards and J.L. Davidson
THE MODIFICATION OF THE ABRASION RESISTANCE OF TYPE Ha (110) DIAMOND USING CARBON AND NITROGEN IMPLANTATION 171
Gregory С Anderson, Steven Prawer, and Peter N. Johnston
PART III: II-VI COMPOUNDS
»STOICHIOMETRY CONTROL OF COMPOUND SEMICONDUCTORS 179 Jun-Ichi Nishizawa, Ken Suto, and Yutaka Oyama
»INITIAL STAGES OF GROWTH OF ZnSe ON Si 191 R.D. Bringans, D.K. Biegelsen, L.-E. Swartz, F.A. Ponce, and J .С Tramontana
»Invited Paper
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THE MBE GROWTH OF WIDEGAP II-VI INJECTION LASERS AND LEDs 203 W. Xie, D.C. Grillo, M. Kobayashi, R.L. Gunshor, H. Jeon, J. Ding, A.V. Nurmikko, G.C. Hua, and N. Otsuka
ALLOY DEPENDENT PROPERTIES OF EXCITONS AND DEEP ACCEPTORS IN CdZnTe VOLUME CRYSTALS 209
B.K. Meyer, D.M. Hofmann, K. Oettinger, W. Stadler, ALL. Efros, M. Salk, and K.W. Benz
CHARACTERIZATION OF ZnS LAYERS GROWN BY MOCVD FOR THIN FILM ELECTROLUMINESCENCE (TFEL) DEVICES 215
J.E. Yu, K.S. Jones, J. Fang, P.H. Holloway, B. Pathangey, E. Bretschneider, and T.J. Anderson
GROWTH AND CHARACTERIZATION OF ZnSe/ZnCdSe DIODE STRUCTURES ON (In,Ga)As BUFFER LAYERS 221
G.C. Hua, N. Otsuka, W. Xie, D.C. Grillo, M. Kobayashi, and R.L. Gunshor
MBE GROWTH AND PROPERTIES OF WIDE BAND-GAP II-VI STRAINED-LAYER SUPERLATTICE 227
Hailong Wang, Jie Cui, Aidong Shen, Liang Xu, Yunliang Chen, and Yuhua Shen
IN-SITU SPECTROSCOPIC ELL1PSOMETRY APPLIED TO ZnSe AND ZnCdSe GROWTH PROCESS IN ORGANOMETALLIC VAPOR PHASE EPITAXY 237
J. Iacoponi, I.B. Bhat, B. Johs, and J.A. Woollam
GROWTH OF EPITAXIAL ZnS FILMS BY PULSED-LASER ABLATION 243 J.W. McCamy, D.H. Lowndes, J.D. Budai, B.C. Chakoumakos, and R.A. Zuhr
SYNTHESIS, STRUCTURAL AND OPTICAL CHARACTERIZATION OF ZINC CHALCOGENIDES IN NOVEL SOLID STATE HOSTS 249
Kelly L. Moran, Andrew W. Ott, Thurman E. Gier, William T.A. Harrison, Hellmut Eckert, and Galen D. Stucky
EXCIMER LASER MELTING OF MBE-ZnSe 255 Nallan С Padmapani, G.-J. Yi, G.F. Neumark, Z. Lu, C.C. Chang, and M.C. Tamargo
CHARACTERISTICS OF ZnSe LAYERS GROWN ON Zn-STABILIZED AND Se-STABILIZED GaAs SUBSTRATES 261
S. Akram, H. Ehsani, I.B. Bhat, and S.K. Ghandhi
OPTICAL TRANSITIONS ON CdS/CdTe CVD HETEROSTRUCTURES 267 Claude Boemare and M.H. Nazare
VAPOR-PHASE GROWTH OF EPITAXIAL AND BULK ZnSe 273 W.L. Ahlgren, S. Sen, S.M. Johnson, W.H. Konkel, J.A. Vigil, and R.P. Ruth
OMVPE GROWTH OF ZnSe UTILIZING ZINC AMIDES AS SOURCE COMPOUNDS: RELEVANCE TO THE PRODUCTION OF p-TYPE MATERIAL 281
William S. Rees, Jr., David M. Green, Timothy J. Anderson, and Eric Bretschneider
HIGH RESOLUTION PHOTOLUMINESCENCE OF EDGE AND NEAR-EDGE CdTe 287
M.C. Carmo and M.J. Soares
VII
HIGH QUALITY EPITAXIAL FILMS OF ZnSe AND ZnSe/ZnS STRAINED LAYER SUPERLATTICES GROWN BY MOCVD 293
Chungdee Pong, R.C. DeMattei, and R.S. Feigelson
THE APPLICATION OF LAMMA-1000 TO THE ELEMENTAL ANALYSIS OF CdTe COMPOUND 299
A.I. Belogorokhov and A.Yu. Khar'kovsky
OPTICAL STUDY OF THE CdTe CRYSTALS IN FAR INFRARED REGION AT TEMPERATURES (5-500)K 303
A.I. Belogorokhov
PART IV: THEORY OF WIDE BAND-GAP SEMICONDUCTORS
*SELF-COMPENSATION AND DOPING PROBLEMS IN ZnSe 311 David B. Laks and Chris G. Van de Walle
»THEORY OF DOPING OF DIAMOND 323 J. Bernholc, S.A. Kajihara, and A. Antonelli
»QUASI-EQUILIBRIUM NUCLEATION AND GROWTH OF DIAMOND AND CUBIC BORON-NITRIDE 335
Y. Bar-Yam, T. Lei, T.D. Moustakas, D.C. Allan, and M.P. Teter
FIRST-PRINCIPLES INVESTIGATIONS OF ACCEPTORS IN ZnSe 349 Chris G. Van de Walle and D.B. Laks
INTERSTITIAL IMPURITIES IN WURTZITE VS. ZINCBLENDE SEMICONDUCTORS: THE CASE OF H IN SiC 355
M.A. Roberson and S.K. Estreicher
POTENTIAL ENERGY SURFACES AND STABILITY OF О IN ELEMENTAL AND COMPOUND SEMICONDUCTORS 361
S.K. Estreicher, M.A. Roberson, C.H. Chu, and J. Solinsky
A COMPARISON OF THE WURTZITE AND ZINCBLENDE BAND STRUCTURES FOR SiC, A1N AND GaN 367
W.R.L. Lambrecht and B. Segall
ON THE BURSTEIN-MOSS SHIFT IN QUANTUM CONFINED WIDE-BAND GAP SEMICONDUCTORS 373
Kamakhya P. Ghatak and Badal De
THE EINSTEIN RELATION IN SUPERLATTICES OF WIDE-BAND GAP SEMICONDUCTORS UNDER CROSS-FIELD CONFIGURATION 377
Kamakhya P. Ghatak and Badal De
PART V: III-V NITRIDES AND OTHER IH-V COMPOUNDS
»CONDUCTIVITY CONTROL OF AlGaN, FABRICATION OF AlGaN/ GaN MULTI-HETEROSTRUCTURE AND THEIR APPLICATION TO UV/BLUE LIGHT EMITTING DEVICES 383
I. Akasaki and H. Amano
»OPTICAL AND ELECTRONIC PROPERTIES OF THE NITRIDES OF INDIUM, GALLIUM AND ALUMINIUM AND THE INFLUENCE OF NATIVE DEFECTS 395
T.L. Tansley and R.J. Egan
»Invited Paper
»SYSTEMATIC STUDIES ON MAGNETRON-SPUTTERED INDIUM NITRIDE 409 W.A. Bryden, S.A. Ecelberger, J.S. Morgan, Т.О. Poehler, and T.J. Kistenmacher
CHARACTERIZATION OF AIGa. XN GROWN BY MOCVD AT LOW TEMPERATURES 421
Z.J. Yu, B.S. Sywe, and J.H. Edgar
A COMPARATIVE STUDY OF GaN FILMS GROWN ON DIFFERENT FACES OF SAPPHIRE BY ECR-ASSISTED MBE 427
T.D. Moustakas, R.J. Molnar, T. Lei, G. Menon, and CR. Eddy Jr.
A COMPARATIVE STUDY OF GaN EPITAXY ON Si(OOl) AND Si(ll l) SUBSTRATES 433
T. Lei and T.D. Moustakas
GROWTH DEPENDENCE OF THICKNESS, MORPHOLOGY AND ELECTRICAL TRANSPORT OF InN OVERLAYERS ON AIN-NUCLEATED (00.1) SAPPHIRE 441
T.J. Kistenmacher, S.A. Ecelberger, and W.A. Bryden
LOW TEMPERATURE PREPARATION OF GALLIUM NITRIDE THIN FILMS 445 Roy G. Gordon, David M. Hoffman, and Umar Riaz
AN INVESTIGATION OF LIGHT INDUCED DEFECTS IN ALUMINUM NITRIDE CERAMICS 451
J.H. Harris and R.A. Youngman
CRYSTALLINE GROWTH OF WURTZITE GaN ON (111) GaAs 457 J. Ross, M. Rubin, and Т.К. Gustafson
B.S. Sywe, Z.J. Yu, and J.H. Edgar 463
STRUCTURAL CHARACTERIZATION AND RAMAN SCATTERING OF EPITAXIAL ALUMINUM NITRIDE THIN FILMS ON Si(lll) 469
W.J. Meng, T.A. Perry, J. Heremans, and Y.T. Cheng
ТЕМ STUDY OF DISLOCATIONS IN PLASTICALLY DEFORMED A1N 475 V. Audurier, J.L. Demenet, and J. Rabier
TEMPERATURE DEPENDENCE OF OPTICAL PROPERTIES OF AIAs, STUDIED BY IN SITU SPECTROSCOPIC ELLIPSOMETRY 481
Huade Yao, Paul G. Snyder, Kathleen Stair, and Thomas Bird
MOMBE GROWTH OF GaP AND ITS EFFICIENT PHOTOENHANCEMENT AT LOW TEMPERATURES 487
Masahiro Yoshimoto, Tsuzumi Tsuji, Atsushi Kajimoto, and Hiroyuki Matsunami
PART VI: SILICON CARBIDE
»PROGRESS IN SILICON CARBIDE SEMICONDUCTOR TECHNOLOGY 495 J.A. Powell, P.G. Neudeck, L.G. Matus, and J.B. Petit
»THE ORIGIN OF POLYTYPES IN SiC AND ZnS 507 Volker Heine, C. Cheng, G.E. Engel, and R.J. Needs
EPITAXIAL MONOCRYSTALLINE SiC FILMS GROWN ON Si BY LOW-PRESSURE CHEMICAL VAPOR DEPOSITION AT 750°C 519
I. Golecki, F. Reidinger, and J. Marti
»Invited Paper
IX
EVALUATION OF SILICON CARBIDE FORMED WITH A SINGLE PRECURSOR OF Di-tert-BUTYSILANE 525
Sing-Pin Tay, J.P. Ellul, Susan B. Hewitt, N.G. Tarr, and A.R. Boothroyd
STRESS-INDUCED POLYTYPIC TRANSFORMATION IN SiC 531 J.W. Yang, T. Suzuki, P. Pirouz, J.A. Powell, and T. Iseki
EFFECT OF CARBONIZATION GAS PRECURSOR ON THE HETEROEPITAXIAL GROWTH OF SiC-ON-Si BY RTCVD 537
A.J. Steckl and J.P. Li
PREPARATION AND CHARACTERIZATION OF 3C-SiC HETEROEPITAXIAL LAYERS ON Si(l 11) 543
Mitsugu Yamanaka and Keiko Ikoma
CHARACTERIZATION OF SILICON CARBIDE THIN FILMS DEPOSITED BY LASER ABLATION ON [001] AND [111] SILICON WAFERS 549
L. Rimai, R. Ager, E.M. Logothetis, W.H. Weber, and J. Hangas
HETEROEPITAXIAL GROWTH OF SiC FILMS BY CVD FROM SILANE, METHANE, PROPANE, AND HYDROGEN MIXTURES 555
B. Bahavar, M.I. Chaudhry, and R.J. McCluskey
ELECTRICAL PROPERTIES OF THERMALLY GROWN Si02-SiC INTERFACES 561
Nitya N. Singh, A. Rys, and A.U. Ahmed
ELECTRICAL AND CHEMICAL CHARACTERIZATION OF CONTACTS TO SILICON CARBIDE 567
Jeremy B. Petit and Mary V. Zeller
HIGH TEMPERATURE OHMIC CONTACTS FOR n-TYPE 0-SiC SENSORS 573 J.S. Shor, R.A. Weber, L.G. Provost, D. Goldstein, and A.D. Kurtz
PART VII: BORON NITRIDE AND OTHER BORON COMPOUNDS
»HETEROEPITAXIAL GROWTH OF CUBIC BORON NITRIDE ON SILICON 585
G.L. Doll, T.A. Perry, J.A. Sell, C.A. Taylor, and R. Clarke
PULSED EXCIMER LASER ABLATION DEPOSITION OF BORON NITRIDE ON Si (100) SUBSTRATES 593
T.A. Friedmann, К.F. McCarty, E.J. Klaus, D. Boehme, W.M. Clift, H.A. Johnsen, M.J. Mills, D.K. Ottesen, and R.H. Stulen
GROWTH OF TETRAHEDRAL PHASES OF BORON NITRIDE THIN FILMS BY REACTIVE SPUTTERING 599
T.D. Moustakas, T. Lei, R.J. Molnar, С Fountzoulas, and E.J. Oles
EPR INVESTIGATION OF DEFECTS IN BORON NITRIDE THIN FILMS 605 M. Fanciulli and T.D. Moustakas
ESR CHARACTERISTICS OF CUBIC BORON NITRIDE CRYSTALS 613 Fangqing Zhang and Guanghua Chen
THE EFFECTS OF SUBSTRATE BIAS AND Si DOPING ON THE PROPERTIES OF RF SPUTTERED BN FILMS 617
P.K. Banerjee, J.S. Kim, B. Chatterjee, M. Platek, and S.S. Mitra
*Invited Paper
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SUBMILLIMETER OPTICAL PROPERTIES OF HEXAGONAL BORON NITRIDE 623
A.J. Gatesman, R.H. Giles, and J. Waldman
THERMOELECTRIC PROPERTIES OF BORON AND BORON PHOSPHIDE FILMS 629
Y. Kumashiro, T. Yokoyama, J. Nakamura, K. Matsuda, H. Yoshida, and J. Takahashi
CHARACTERIZATION OF BORON CARBIDE FILMS FORMED BY PECVD 637 John Mazurowski, Sunwoo Lee, G. Ramseyer, and P.A. Dowben
MODELING OF THE FORMATION OF BORON CARBIDE PARTICLES IN AN AEROSOL FLOW REACTOR 643
Yun Xiong, Sotiris E. Pratsinis, and Alan W. Weimer
PART VIII: AMORPHOUS AND MICRO-CRYSTALLINE SEMICONDUCTORS
»AMORPHOUS AND MICROCRYSTALLINE SiC AS NEW SYNTHETIC WIDE GAP SEMICONDUCTORS 651
Y. Hamakawa and H. Okamoto
»HIGH-QUALITY AMORPHOUS SILICON CARBIDE PREPARED BY A NEW FABRICATION METHOD FOR A WINDOW P-LAYER OF SOLAR CELLS 663
K. Ninomiya, H. Haku, H. Tarui, N. Nakamura, M. Tanaka, K. Wakisaka, S. Tsuda, H. Nishiwaki, S. Nakano, and Y. Kuwano
DOPED AMORPHOUS AND MICROCRYSTALLINE SILICON CARBIDE AS WIDE BAND-GAP MATERIAL 675
F. Demichelis, C.F. Pirri, E. Tresso, and P. Rava
WIDE-GAP POLYSILANE PRODUCED BY PLASMA-ENHANCED CVD AT CRYOGENIC TEMPERATURES 681
S. Miyazaki, H. Shin, K. Okamoto, and M. Hirose
OPTICALLY INDUCED PARAMAGNETISM IN AMORPHOUS HYDROGENATED SILICON NITRIDE THIN FILMS 687
W.L. Warren, J. Kanicki, F.C. Rong, W.R. Buchwald, and M. Harmatz
STRUCTURE, CHARACTERISTICS, AND THE APPLICATION OF PHOSPHORUS DOPED HYDROGENATED MICROCRYSTALLINE SILICON 693
S.J. Jeng, D.E. Kotecki, J. Kanicki, C.C. Parks, and J. Tien
ELECTRICAL AND OPTICAL PROPERTIES OF OXYGENATED MICROCRYSTALLINE SILICON (mc-Si:0:H) 699
M. Faraji, Sunil Gokhale, S.M. Chaudhari, M.G. Takwale, and S.V. Ghaisas
PART IX: CHALCOPYRITES, OXIDES, AND HALIDES
»LATTICE-MATCHED HETEROEPITAXY OF WIDE GAP TERNARY COMPOUND SEMICONDUCTORS 707
Klaus J. Bachmann
»OBSERVATION OF GAS FLOW PATTERNS IN A CVD REACTOR FOR WIDE BAND GAP SEMICONDUCTOR THIN FILM DEPOSITION 721
Kinya Atsumi, Yoshiki Ueno, Tadashi Hattori, and Yoshihiro Hamakawa
»Invited Paper
ELECTRONIC TRANSITION-RELATED OPTICAL ABSORPTION IN VANADIA FILMS 731
Nada M. Abuhadba and Carolyn R. Aita
PHASE MAPPING SPUTTER DEPOSITED WIDE BAND-GAP METAL OXIDES 737 CR. Aita, R.C. Lee, C.-K. Kwok, and E.A. Kolawa
CHEMICAL VAPOR DEPOSITION OF HIGHLY TRANSPARENT AND CONDUCTIVE BORON DOPED ZINC OXIDE THIN FILMS 743
Jinhua Hu and Roy G. Gordon
ZnO ON Si,N4 BIMORPHS WITH LARGE DEFLECTIONS 749 Wai-Shing Choi and Jan G. Smits
INFLUENCE OF SUBSTRATE TEMPERATURE ON TIN OXIDE THIN FILMS DEPOSITED BY ELECTRON BEAM EVAPORATION TECHNIQUE 755
S.M. Rozati, S. Mirzapour, M.G. Takwale, B.R. Marathe, and V.G. Bhide
NANOMETER SIZE LEAD IODIDE PARTICLES 761 Vivek Mehrotra, Eric Rodeghiero, Jens W. Otto, and Emmanuel P. Giannelis
EFFECTS OF CONTACT MATERIALS ON THE THERMALLY STIMULATED CURRENT SPECTRA OF MERCURIC IODIDE 767
X.J. Bao, Т.Е. Schlesinger, R.B. James, A.Y. Cheng, С Ortale, and L. van den Berg
OPTICAL AND MAGNETIC RESONANCE INVESTIGATIONS OF MERCURIC IODIDE CRYSTALS 773
B.K. Meyer, D.M. Hofmann, J. Eckstein, and K.W. Benz
EFFECTS OF REACTIVE SPUTTERING PARAMETERS ON THE GROWTH AND PROPERTIES OF ACOUSTOOPTIC ZnO FILMS 779
E. Jacobsohn and D. Shechtman
AUTHOR INDEX 785
SUBJECT INDEX 789
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