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Images of Es d Damage
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Transcript of Images of Es d Damage
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Images of
ElectroStaticDischarge Damage
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Damage visible usingScanning Electron Micrograph (SEM)
after significant enhancementby delayering and etch enhancement.
Used with permission ofHi-Rel Laboratories, Inc.
Spokane WA 99217www.hrlabs.com
Images of ESD damage
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Photo of ESD arcing from finger to componentThis is not a computer simulation.
Technician was connected to a small magneto
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This is not HBM-ESD. Extensive damage on thistransistor where the bond has melted is typical ofsurges from Inductors, Transformers, and Motors.
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Arcing of this nature within an integrated circuit is typical oftesting damage. Human Body Model ESD does not create
sufficient damage to be seen in an optical microscope.
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Optical photo of a large Integrated Circuit which hasexperienced ESD damage to the pin noted by the arrow .
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Higher magnification photo of pin noted by the arrow in the priorslide This taken at 400 times magnification on a 4" X 5" photo.
The damage is noted as the "fuzz" at the end of the arrow.
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Now you see it!! Overlying glassivation has been removedand the surface decorated to show the ESD damage at 5,000
times magnification in this scanning electron micrograph.
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Techniques used to locate HBM-ESD damage in an integrated circuit.Clockwise from the upper left optical photo at 400X shows no damage.
The upper right hand scanning electron micrograph (SEM) shows nodamage. The lower right hand image is the current flow in the device
which shows asubsurface arcbetween the twometal lines. Thelower left photo is
a combination ofthe SEM imageand the currentflow image.
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Scanning electron micrograph (SEM) image of the devicein prior slide after glassivation removal and surfacedecoration. The enlargement 2,000 times magnification.
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Optical micrograph of an Integrated Circuit damaged by HBM ESD.Damage has occurred in the large thin oxide metal capacitor in theupper center of the image. However, no physical damage is visible.
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Scanning electron micrograph (SEM) image of the ESD damage afterremoval of the capacitor metallization. Note the characteristic
eruption thru the oxide. Magnification is 10,500 times.
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Optical image of an Integrated Circuit damaged by HBM ESD. Thesecond pin from the bottom left is good and its mirror image, secondfrom the right is damaged. However, no physical damage is visible.
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Scanning electron micrograph (SEM image of the damage site on theIntegrated Circuit shown in prior slide. Metal has been removed expose
the underlying damage site. Magnification is 6,450 times.
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