IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A....
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Transcript of IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A....
![Page 1: IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO.](https://reader036.fdocuments.us/reader036/viewer/2022082820/56649eab5503460f94bb0953/html5/thumbnails/1.jpg)
IFIC projects for the ILC
IFIC – ValenciaJ. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus-
Golfe, J. Resta, I. Carbonell
IFIC - INSTITUTO DE FÍSICA CORPUSCULAR
MINISTERIODE EDUCACIONY CIENCIA
Valencia, 6 – 10 November 2006
![Page 2: IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO.](https://reader036.fdocuments.us/reader036/viewer/2022082820/56649eab5503460f94bb0953/html5/thumbnails/2.jpg)
• Layout studies:– Would it be worth using pixel-like detectors outside the vertex?
• Mechanical designs and constructions:– Studies of mechanical supports for a VTX detector:
• Prepare for the proof-of-concept staves.
• Mainly explore the different VTX sensor technologies: MAPS & DEPFET– Construction is still far in the
future and may be something different, like the out-of-vertexpixel sensors or in any case theend-cap tracker.
IFIC future contributions to ILC within the Detector framework
IFIC - INSTITUTO DE FÍSICA CORPUSCULAR
MINISTERIODE EDUCACIONY CIENCIA
Valencia, 6 – 10 November 2006
![Page 3: IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO.](https://reader036.fdocuments.us/reader036/viewer/2022082820/56649eab5503460f94bb0953/html5/thumbnails/3.jpg)
DEPFET Pixels
DEPFET principle:
• DEPFET is an active pixel device with a fully depleted substrate.•The first amplification stage is realized by a FET that is embedded into the silicon substrate.• The charge is accumulated in the internal gate of the embedded transistor.
DEPFET clearing operation:
• The accumulated charge must be remove after reading.• A high positive voltage is applied to the clear contact.
IFIC - INSTITUTO DE FÍSICA CORPUSCULAR
MINISTERIODE EDUCACIONY CIENCIA
Valencia, 6 – 10 November 2006
![Page 4: IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO.](https://reader036.fdocuments.us/reader036/viewer/2022082820/56649eab5503460f94bb0953/html5/thumbnails/4.jpg)
MAPS Pixels
• MAPS principle:– Uses a non-depleted lightly doped
epitaxial layer as active volume.
– The epi-layer is placed between two high-doped p substrates which create potential barriers for the electrons.
– The electrons are collected by diffusion.
– 100 % fill factor, required for tracking applications.
– Signal read-out achieved by three in-pixel transistors.
– Signal read-out based in source-follower configuration.
Read-out chain
![Page 5: IFIC projects for the ILC IFIC – Valencia J. Fuster, C. Lacasta, P. Modesto, M. Vos, C. Alabau, A. Faus- Golfe, J. Resta, I. Carbonell IFIC - INSTITUTO.](https://reader036.fdocuments.us/reader036/viewer/2022082820/56649eab5503460f94bb0953/html5/thumbnails/5.jpg)
Where we are…
DEPFET (MPI-Munich, Bonn Univ., …): Testing the DEPFET readout chip (CURO):
Characterization of current version: Internal calibration. Radioactive source. Laser.
Helping in the design of the new chip. Participating in test-beams:
August 2006 (CERN). October 2006 (CERN). …
MAPS (RAL and Strasbourg): Negotiation stage.
IFIC - INSTITUTO DE FÍSICA CORPUSCULAR
MINISTERIODE EDUCACIONY CIENCIA
Valencia, 6 – 10 November 2006