IF1 CDR 9/12/031 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) IF-1 high...

IF1 CDR 9/12/03

1Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

IF-1 high (4-8 GHz) design and DM results

Carmen Diez, Isaac López-Fernández, Juan Daniel Gallego, Alberto Barcia, Pere Planesas

Centro Astronómico de YebesObservatorio Astronómico Nacional

Apartado 148, 19080 Guadalajara, SPAIN

IF1 CDR 9/12/03 2Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

Contents

IF 1 (4-8 GHz) Specification

IF 1 (4-8 GHz) Design and DM results

Design choices

Results from DMs

Experience with IF 1 (4-8 GHz) DMs

Operational experience

Overview of IF 1 problems and failures

Discussion


SPECIFICATION (introduction)


SPECIFICATION (performance)

Frequency Band: 4-8 GHz Noise Temperature: 10 K (baseline), 5 K (goal) Gain: >22 dB Gain ripple: ±2dB (baseline), ±1.5dB (goal) Input Return Loss: < 0dB (no isolator) Output Return Loss: <-10 dB (baseline), <-15 dB (goal) Stability: K>1 (all frequencies) Maximum Power Dissipation: 5 mW Bias Range: 0<Vd<1V, 0<Id<5mA, –11.0V<Vg<5.9V Normalized Gain Fluctuation @ 1 Hz:

3×10-4 (Hz)-1/2 (baseline), 1.4×10-4 (Hz)-1/2 (goal)


SPECIFICATION (interfaces)

Envelope: 7845.3 15 mm Mounting holes: 3 Helicoil M2.5 Interface surface: gold plated, 10 m flatness RF connectors: SMA (4 screw for O-ribbon) DC connectors: MDM (9 pin P type, no gasket) DC pin allocation: includes Ground sense DC pin allocation: pins not used are grounded


SPECIFICATION (interfaces)

Bias circuit Gate voltage divider ESD protection EMC rejection


SPECIFICATION (environmental)

EMI/ESD: provision of an additional cavity (not used) EMI tests performed on DMs ESD tests done in HEMTs

Radiation: tests done at KOSMA on InP HEMTs Thermal Cycles: 50, RT to Cryogenic Bake-out: 5, RT to 90 C Vibration

Qualification at 90 K Acceptance at RT, reduced level

Vent holes


DESIGN (history 1)

Goal 1: 4 GHz Bandwith Center frequency 10 GHz:

Less fractional BW Isolators available Bad for HEB

Center frequency 6 GHz: More fractional BW Isolators needed development Possible for HEB

Goal 2: Low Power Dissipation GaAs: Commercial, well established, initially considered InP: Experimental, qualification needed, lower noise and power


DESIGN (history 2)

YXF 8-12 GHz YCF 2000 (Mixer Groups)

YCF 5000 YCF 6000

IF1 CDR 9/12/03 10

Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain)

DESIGN (history 3)

37 4-8 GHz YCF amplifiers fabricated at CAY in different series All processed performed in our labs Design transferred to Alcatel Espacio to build Flight Models Series analyzed here:

YCF 2 – ETH transistors (Mixer Program Amplifiers) YCF 6 – TRW transistors (Development Models)

SERIES QUANTITY DESTINATION SER. NUMBERS

0 - 1 4 Demonstration prototypes for the evaluation of technology, devices and performance 002, 3, 4, 1001

1 Yebes 2001 1 Platform for transistor characterization (Yebes) 2010 8 Herschel MP (SRON, JPL, KOSMA, DEMIRM, Chalmers) 2002-2009 4 IRAM ALMA Development 2013, 16, 17, 18 1 SRON ALMA Development 2015 4 Harvard-Smithsonian CfA (SMA) 2011, 12, 19, 20

2

1 Cambridge Cavendish Laboratory (JCMT) 2014

5 1 Cornell University (Arecibo) 5001 1 Yebes 6001

5 Herschel DMs 6004, 5, 6, 9, 14 4 Herschel MP (SRON, JPL, KOSMA) 6007, 10, 11, 12

6

2 Harvard-Smithsonian CfA (SMA) 6008, 13

IF1 CDR 9/12/03 11


Design Description (1)

Interstage matching circuits

MICROTECHDC connector

SMA connector

Bias cavity with biasing circuits

Transistor area detail.See sourceinductive feedbackand drainresistive loading

ETH transistorwith bonding wires

1 2 3

Input matching circuit Output matching circuit

IF1 CDR 9/12/03 12


Design Description (2)

Microstrip hybrid design simulated by MMICAD software Developed cryogenic models for transistors, connectors, critical

capacitors, resistors and bonding wires Each InP device is independently stabilized by resistive loading and

inductive feedback Input matching circuit for optimum noise Tuning elements incorporated in the design

(adjustable bonding wires, microstrip islands) Box resonances avoided with careful EM design and the use of

microwave absorbers Multiple bias networks requirements must filter RF,

Contribute to the unconditional stability of the amplifier Comply with EMC mission requirements Provide ESD protection of sensitive InP HEMTs Have a low drain voltage drop

IF1 CDR 9/12/03 13


Design Description: Reliability

Reliability is a priority over performance for the selection of components, substrates and mounting techniques

Spatial design Cryogenic operation

Past experience in cryogenic designs obviates most of the work in testing, modeling and pre-qualifying components

An example: ‘O’ ribbon connection in the SMA tab contact: Allows mobility in three axis Excellent electrical properties

compared with traditional SMA connections

IF1 CDR 9/12/03 14


DESIGN: Cryo Capacitors

IF1 CDR 9/12/03 15


DESIGN: Measurement of cryogenic S parameters

IF1 CDR 9/12/03 16


DESIGN: Measured S parameters of a InP HEMT

IF1 CDR 9/12/03 17


DESIGN: Experience with HEMTs (2)

Wide experience with HEMT devices More than 30 batches of commercial GaAs transistors tested Several models of InP transistors measured

JPL-TRW (CHOP program): 15 batches, 9 models ETH Zurich: 8 batches, 4 models Chalmers University: 1 batch HRL: 1 Batch

IF1 CDR 9/12/03 18


DESIGN: InP HEMTs

3 4 5 6 7 8 90

5

10

15

20

25

30

YCF 2 InP devices comparisonOptimum noise bias

ETH T-35 TRW T-45 TRW T-42

Ga

in (

dB

)

Freq. (GHz)

0.0

2.5

5.0

7.5

10.0

12.5

15.0

Tn

(K

)

ETH T-35 TRW T-45 TRW T-42

ETH T-35 200×0.2 μm gate Experimental transistor Design by request Used in DMs

TRW T-45 CRYO4 200×0.1 μm gate Used in DMs Space qualifiable, to be used in FMs CHOP developed

TRW T-42 CRYO3 200×0.1 μm gate Best performance

0.22 mm

0.19

mm

IF1 CDR 9/12/03 19


DESIGN: Closed Cycle Cryostat

IF1 CDR 9/12/03 20


Performance: Noise and GainMeasurement procedures

Measurement procedure:cold attenuator

Two measurement systems available at our labs: System 350:

Older More pessimistic Used to keep traceability with

past measurements All noise tests shown here

were performed with 350. System 1020:

Newer calibration. Gives 0.75 K better results

Estimated error (both) 1.4 K(repetitivity < 0.2 K)

3 4 5 6 7 8 90

5

10

15

20

25

30

YCF 6001 (T=14 K)

System 1020 System 350

Gai

n (

dB)

Freq. (GHz)

0

2

4

6

8

10

12

Tn

(K)

15 K

65 K

297 K

PREAMPLIFIER

DEWAR

HPIBRS-232

NARDA DC-BLOCK

NARDA ATTEN. (15 dB)

HEMT AMPLIFIER

TEMP. SENSOR

LAKE SHORE CRYOGENIC

THERMOMETERCOMPUTER

NOISE FIGURE METER

TEST SET

SYNTHESIZER OSCILATOR

NOISE DIODE HP 346 C

IF1 CDR 9/12/03 21


MP amplifier YCF 2

2 stages ETH 200 µm

Gold plated brass

61.4×35×11.5 mm, 149 g

Duroid 6002 substrates

DM amplifier YCF 6

2 stages TRW 200 µm

Gold plated aluminum

58×32×15 mm, 65 g

Duroid 6002 substrates

Improved bias circuits

Additional cavity for filtering

IF1 CDR 9/12/03 22


Performance: Noise and GainResults

3 4 5 6 7 8 90

5

10

15

20

25

30

Gai

n [d

B]

Freq. [GHz]

0

2

4

6

8

10

12

HERSCHEL IF1 YCF 2 MPsGlobal optimum bias T=14 K

Tn

[K]

3 4 5 6 7 8 90

2

4

6

8

10

12

Tn

[K]

Freq. [GHz]

0

5

10

15

20

25

30

HERSCHEL IF1 YCF 6 DMsP

D=4 mW, T=14 K

Gai

n [d

B]

NOISE TEMPERATURE [K] (MEAN)

GAIN [dB] (MEAN)

GAIN FLATNESS [dB] (PEAK TO PEAK) AMPLIFIER

GROUP Best amp. Average Worst Best amp. Average Worst Best amp. Average Worst

YCF 2 MPAs 4.89 5.18 5.38 25.29 24.80 24.06 2.35 2.85 3.19 YCF 6 DMs 3.46 3.57 3.72 27.70 27.11 26.26 1.96 2.19 2.46

IF1 CDR 9/12/03 23


Performance: Reflection and Stability

Worst case output reflection Average DMs: -14.3 dB Average MPAs: -13.0 dB

Model prediction of output return losses needs refinement

Isolator at the input(not designed for low input ref.)

Unconditionally stability for most bias points checked with sliding shorts

2 3 4 5 6 7 8 9 10-30

-25

-20

-15

-10

-5

0

Freq. [GHz]

S1

1,

S2

2

[dB

]

HERSCHEL IF1 YCF 2 MPsGlobal optimum bias, T=14 K

2 3 4 5 6 7 8 9 10-30

-25

-20

-15

-10

-5

0

Freq. [GHz]

S1

1,

S2

2

[dB

]

HERSCHEL IF1 YCF 6 DMsP

D=4 mW, T=14 K

IF1 CDR 9/12/03 24


Performance: Gain fluctuationsCorrelation with voltage fluctuations

Fluctuations of gate voltage measured with HP35670A

Moderate correlation with gain fluctuations for different amplifiers measured at the same bias point

This simple DC measurements may be useful for pre-selecting least fluctuating devices from a batch

8.0x10-5 1.0x10-4 1.2x10-4 1.4x10-44.0x10-5

5.0x10-5

6.0x10-5

7.0x10-5

8.0x10-5

9.0x10-5

YCF 6 amplifiers fluctuations (both stages)8 GHz, 14 K Vd1=0.85 V Vd2=0.5 V Id1,2=3 mA

VG @

1 H

z [V

/Hz1

/2]

G/G @1 Hz [1/Hz1/2]

10-2 10-1 100 10110-5

10-4

10-3

10-2

YCF 6001 Gain fluctuations Spectrum8 GHz, 14 K Vd1=0.85 V Vd2=0.5 V Id1,2=3 mA

G/G

[H

z-1

/2]

Freq. [Hz]

measured fitted correction

1st stage

2nd

stage

100

101

102

10n

100n

1µ

10µ

100µ

1m

10m

YCF 6001 VG fluctuations Spectrum

8 GHz, 14 K, Vd1=0.85 V, Vd2=0.5 V, Id1,2=3 mA

VG [V

/Hz

1/2]

Freq. [Hz]

1 Hz

1 Hz

IF1 CDR 9/12/03 25


Performance: Gain fluctuationsBias dependence

Tested the variation of gain and voltage fluctuations with drain voltage Found a steep change in gain voltage around 0.5 V The behavior of gain and voltage fluctuations is similar as Vd varies

High fluctuation zones could be avoided with no penalty in noise or gain Voltage fluctuations may help detecting these bias regions

0.0 5.0x10-5 1.0x10-4 1.5x10-40.0

1.0x10-5

2.0x10-5

3.0x10-5

4.0x10-5

5.0x10-5

YCF 6001 1st stage fluctuations8 GHz, 14 K Vd=0.3..0.7 V Id=3 mA (device)

VG

1 @1

0 H

z [V

/Hz1/

2 ]

G/G @1 Hz [1/Hz1/2]

0.2 0.3 0.4 0.5 0.6 0.7 0.80.00

2.50x10-5

5.00x10-5

7.50x10-5

1.00x10-4

1.25x10-4

1.50x10-4

Gain fluctuations noise floor

YCF 6001 1st stage fluctuations8 GHz, 14 K Id=3 mA

VD1

(device) [V]

G/G

@1

Hz

[1/H

z1/2]

0.0

1.0x10-5

2.0x10-5

3.0x10-5

4.0x10-5

5.0x10-5

6.0x10-5

VG @

10 H

z [V

/Hz1

/2]

IF1 CDR 9/12/03 26


DM Program (Yebes)

HIFI YCF 6000 (Results)HIFI YCF 6000 (Results)Bias Series

Number 1st stage 2nd stage

Average Gain and ripple

Average Noise Temp.

Minimum Output Ref.

Gain Stability

YCF Vd [V]

Id [mA]

Vd [V]

Id [mA]

Gav G [dB]

Tn [K]

out

[dB]

G [Hz-1/2 @1 Hz]

Specif. PD [mW]/Stage= 2mW 22 1.5 5 15 1.410-4

6001 0.85 3 0.5 3 27.11.3 3.7 14.8 1.210-4

6004 0.85 3 0.5 3 26.91.1 3.6 14.4 8.710-5

6005 0.85 3 0.5 3 27.31.0 3.4 11.2 8.910-5

6006 0.85 3 0.5 3 27.11.0 3.5 13.9 1.310-4

6007 0.85 3 0.5 3 25.91.3 4.1 14.6 1.410-4

6008 0.85 3 0.5 3 25.51.1 3.4 12.0 7.710-5

6009 0.85 3 0.5 3 27.41.1 3.5 9.7 1.010-4

6010 0.85 3 0.5 3 27.11.2 3.7 14.8 8.710-5

6011 0.90 3 0.45 3 25.81.2 4.0 12.1 1.110-4

6012 0.85 3.5 0.45 2.5 25.51.3 4.2 13.8 9.010-5

6013 0.85 3 0.5 3 26.11.3 3.9 14.9 9.310-5

6014 0.85 3 0.5 3 26.01.3 3.7 16.7 1.010-4

IF1 CDR 9/12/03 27


Performance: IsolatorsImpact in overall performance

Isolators measured @ 14 K (PAMTECH gives data @ 77 K)

Good agreement between measurement (one case) and estimation of isolator noise:

Mean contribution 1.1 – 1.4 K

ampambiso

c TTG

T

1

1

3 4 5 6 7 8 90

5

10

15

20

25

30

YCF 6005 (T=14 K)

Tn

(K)

Freq (GHz)

No Isolator Isolator K10 SN 101

0

5

10

15

20

25

30

G(d

B)

IF1 CDR 9/12/03 28


Performance: IsolatorsResults

MEASUREMENTS @ 14 K [dB] ISOLATOR MODEL

DATA TYPE S11 < S22 < S12 < S21 >

Gav mean [dB]

ΔTc mean [K]

Best of 9 -19.6 -19.0 -19.6 -0.27 -0.17 0.81

Average -18.8 -18.1 -17.4 -0.36 -0.20 1.12 CTH1365 K4

Worst of 9 -18.2 -17.3 -16.0 -0.46 -0.30 1.48 Best of 5 -18.0 -17.9 -20.7 -0.50 -0.26 1.25

Average -16.2 -15.4 -18.3 -0.58 -0.28 1.38 CTH1365 K10

Worst of 9 -15.0 -14.0 -16.5 -0.66 -0.30 1.47

0 2 4 6 8 10 12-50

-40

-30

-20

-10

0PAMTECH CTH 1365 K10 ISOLATORS (T=15 K)

S22 S11

Ref

lect

ion

coef

f. [

dB]

Freq. [GHz]

0 2 4 6 8 10 12-50

-40

-30

-20

-10

0

-5

-4

-3

-2

-1

0

Isol

atio

n [d

B]

Freq. [GHz]

PAMTECH CTH 1365 K10 ISOLATORS (T=15 K)

S12 S21

Lo

sse

s [d

B]

IF1 CDR 9/12/03 29


DM Program (Yebes)

HIFI YCF 6004HIFI YCF 6004

IF1 CDR 9/12/03 30


QM & FM PROGRAMS (ALCATEL)

ALCATEL AEO 1ALCATEL AEO 1

IF1 CDR 9/12/03 31


QM & FM PROGRAMS (ALCATEL)

ALCATEL AEO 1ALCATEL AEO 1

IF1 CDR 9/12/03 32


Conclusions

34 Cryogenic InP HEMT 4-8 GHz cryogenic amplifiers fabricated for HERSCHEL, including the Development Models with TRW transistors

Cryogenic S parameters of InP transistors measured in microstrip and noise models developed

Cryogenic isolators used at the input allow wide-band mixer-independent design with small penalty in noise

Exceptional performance and repeatability for the final DMs:3.5 K noise and 27±1.1 dB gain dissipating 4 mW

Gain fluctuations exhibit a greater dispersion Low frequency noise of gate bias may help selecting more stable devices

Acute sensitivity of gain fluctuations to bias point Gate bias noise measurements could detect bias regions of high fluctuations

IF1 CDR 9/12/03 33


Experience with IF 1 DMs: FAILURES

Amplifiers YCF 6 (12 amps, 1 fail.) Development models (5)

No failures YCF 6006 presents anomalous gain fluctuations at room temperature

Mixer Groups (4) YCF 6007 failure: Id1=0 @15 K was reported by SRON. This

behavior could not be repeated in our labs even after 10 cooling cycles.

YCF 6012 failure: Id2=7 mA (uncontrolled) was reported by KOSMA. The transistor (IREL1) is broken.

Rest (3) No failures

IF1 CDR 9/12/03 34


Experience with IF 1 DMs: FAILURES

Amplifiers YCF 2 (20 amps, 1 fail.) Mixer Groups (8)

YCF 2006 failure: anomalous gate voltages and very high noise temperatures reported. In our labs we only detected certain hysteresis in the behavior of the 2nd stage transistor (ETH)

YCF 2009 failure: high noise temperature reported. The amplifier was measured in our labs showing no anomalies. No action was taken

Rest (12) No failures

IF1 CDR 9/12/03 35


Conclusions

Failures: 2 in 32 amplifiers

ETH InP HEMT dead (ESD?)

TRW InP HEMT dead (ESD?)

No failures in other components, materials, and processes

IF1 CDR 9/12/031 Centro Astronómico de Yebes, Obs. Astronómico Nacional, IGN (Spain) IF-1 high...

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