IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 45, NO. 10...

IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 45, NO. 10, OCTOBER 2017 2683

Development of a 1.5 kV, 1.2 kA Pulsed-PowerSupply for Light Sintering

Chan-Gi Cho, Seung-Ho Song, Su-Mi Park, Hyeon-Il Park, Jung-Soo Bae,Sung-Roc Jang, Member, IEEE, and Hong-Je Ryoo, Member, IEEE

Abstract— This paper presents the design and experimentalresults of the 36-kW pulsed-power supply for the xenon flashlamp. The continuous conduction mode series-parallel resonantconverter is modified. This means that not only the few hundredkilohertz of high switching frequency is introduced to replace theresonant inductor with the leakage inductor of transformer butalso the high output current is accomplished by using three-phasedelta-connected transformers. In addition, the snubber capacitorof the inverter switches and the power factor correction moduleis both omitted in the compact structure. Although these maincomponents have changed, the efficiency and power factor of therated dummy load reach 96% and 0.96%, respectively. Within36-kW average power, the proposed pulsed-power supply cangenerate as versatile combination of output pulse. For example,it can generate 20-ms pulse with 1-Hz repetition rate or generate1-ms pulse with 20-Hz repetition rate. The used insulated gatebipolar transistor is protected from the turn-OFF peak voltageby the snubber circuit, and the effect of the snubber circuit isshown at the actual load condition.

Index Terms— High switching frequency, high-voltage pulsed-power supply, series-parallel resonant converter (SPRC), snubbercircuit.

I. INTRODUCTION

PRINTED electronics is a set of printing technologies usedto fabricate electrical devices at a low cost. Moreover,

they effectively reduce the manufacturing process time of theexisting printed circuit board industry. A number of industrymarkets forecast the applicability of printed electronics inthe near future [1]–[3]. Sintering, which is the most impor-tant process of printed electronics, helps various operating

Manuscript received February 1, 2017; revised May 16, 2017; acceptedJuly 8, 2017. Date of publication July 31, 2017; date of current versionOctober 9, 2017. This research was supported in part by the Chung-AngUniversity Graduate Research Scholarship in 2016 and in part by theHuman Resources Program in Energy Technology of the Korea Instituteof Energy Technology Evaluation and Planning (KETEP), granted financialresource from the Ministry of Trade, Industry and Energy, Republic of Korea.(NO. 20164030201100). The review of this paper was arranged by SeniorEditor W. Jiang. (Corresponding author: Hong-Je Ryoo.)

C. G. Cho, S. H. Song, S. M. Park, and H. Il. Park are with the Departmentof Energy Engineering, Chung-Ang University, Seoul 06974, South Korea(e-mail: [email protected]; [email protected]; [email protected];[email protected]).

J. S. Bae is with the Energy Conversion Technology, University of Scienceand Technology, Changwon 641-120, South Korea (e-mail: [email protected]).

S. R. Jang is with the Electric Propulsion Research Center, KERI andUniversity of Science & Technology (UST), Changwon 641-120, South Korea(e-mail: [email protected]).

H. J. Ryoo is with the School of Energy Systems Engineering, Chung-AngUniversity, Seoul 06974, South Korea (e-mail: [email protected]).

Color versions of one or more of the figures in this paper are availableonline at http://ieeexplore.ieee.org.

Digital Object Identifier 10.1109/TPS.2017.2730245

conditions for the compacting and forming of a wide rangeof conductive ink materials on different substrates. Amongsintering techniques, intense pulse light (IPL) sintering usinga xenon flash lamp system is able to sinter conductive inkswithout damaging the polymer substrates, at room temperaturecondition. This instantaneous pulse light time could alsoincrease the area of processing and raise the productivity [4].The study about the high-voltage output converters [5]–[10]as well as the production of short pulses [11]–[16] havebeen doing and can be applied to the realization of theIPL technique.

For the high-voltage capacitor charging power supply, thediscontinuous conduction mode, below or above the resonantcontinuous conduction mode (CCM) resonant converters areapplied [17]–[21]. Among each mode has pros and cons,the CCM operating at above resonant frequency, which is suit-able for the low conduction loss and high output current can beused, but these topology has a limitation to increase turn-OFF

snubber capacitance due to hard switching characteristic whenswitches open. To compensate these disadvantages, modifiedCCM resonant converter is proposed improving the waveformof the resonant current in order to reduce the conduction lossand the turn-OFF loss by adding third resonant capacitor withincreased resonant inductance [22]–[24]. However, this mod-ified CCM requires the bulk additional resonant inductor andincreased snubber capacitors for the purpose of compensatingconduction and turn-OFF losses.

In this paper, the newly developed modified CCM resonantconverter using silicon carbide metal-oxide semiconductorfield effect transistor (SiC MOSFET) switches operated at fewhundred kilohertz of high switching frequency is proposed toremove the aforementioned disadvantages of requiring bulkexternal inductor and large snubber capacitors in modifiedCCM resonant converter and it is applied to the high-voltagecapacitor charger for light sintering.

The first distinctive advantage of the proposed topologyis that developed topology has same advantages of reducingconduction and turn-OFF losses with the modified CCM reso-nant converter, but it does not use any bulky external induc-tors or additional snubber capacitors. The second distinctivefeature of the proposed topology is that unique combinationof three-phase delta-connected transformers to increase outputcurrent is used. The three-phase delta connection reduces theamount of current on the primary side of the transformer with-out reducing the output current. Therefore, problems such asunexpected heat generation and conduction loss can be solved.

0093-3813 © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

2684 IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 45, NO. 10, OCTOBER 2017

Fig. 1. Simplified schematic of the entire proposed pulsed-power supply.

The system configuration of the delta-connected CCMseries-parallel resonant converter (SPRC) using high switchingfrequency SiC devices, the operation mode analysis, and thedesign procedure will be explained. Thereafter, the simulationsand experimental results are shown in order to verify the afore-mentioned distinctive features and operation performances.

II. PROPOSED SYSTEM CONFIGURATION

The proposed pulsed-power supply has three main sections:the input rectifier module, three-phase half-bridge SPRC, andthe pulse discharging module. The simplified schematic of theentire pulsed-power supply is shown in Fig. 1. To visually dis-play the compact structure, the resonant inductors, and snubbercapacitors of the inverter switches are omitted in Fig. 1.

A. Input Rectifier Module

The three-phase ac supply (220 V, 60 Hz) is filtered bythe input rectifier diodes. It then charges the 6 μF/1200-Vdc link capacitor (C1) up to 510 V, without the power factorcorrection (PFC) module. There are pros and cons to this inputmodule. The advantage is that the power factor is remarkablyhigh (0.96) because of the PFC component omission. On theother hand, the disadvantage is that a small ripple exists onthe input dc link capacitor. Consequently, the maximum ratedvalue of the inverter switch voltage should be considered.

Two methods for directly using the small ripple are intro-duced. First, the used proportional-integral controller witha high gain, which compares the sensed output voltage ofthe resonant converter with the reference voltage, adjusts theswitching frequency of the MOSFET immediately. This isdone in order to make the output voltage flat. Second, the hugecapacitor bank is connected to the output node of the resonantconverter. As a result, it reduces the influence of the inputvoltage ripple on the output voltage.

B. Three-Phase Half-Bridge SPRC

The SIC MOSFET switches (1200 V, 400 A) are usedto charge and operate the system at a switching frequency

of 160–370 kHz. The phase shifted current is achieved bythe division of the turn-ON and turn-OFF moments of theSIC MOSFET switches. Through the three-phase half-bridgeSPRC, the capacitor bank load is charged up to 1500 V.Furthermore, because the primary sides of the transform-ers are connected in delta form, the converter operates asa three-phase full-bridge converter, which consists of onlysix switches.

The high switching frequency of 160–370 kHz increases theresonant impedance, despite the small resonant inductance,thus leading to an increase in the resonant energy. Normally,the CCM resonant converter requires the substantial size ofthe resonant inductor to fully discharge the snubber capacitor.The developed SPRC reduces this size by raising the operatingfrequency region, and uses the leakage inductance of thetransformer as the resonant inductor. By using the increasedresonant energy, the inherent drain–source capacitor (Cds) ofthe used SIC MOSFET also replaces the subsidiary snubbercapacitor.

The parallel capacitor of the secondary sides of the trans-former increases the stored energy at the resonant tank andreduces the conduction loss. This is because it changes thecurrent waveform from a triangular shape to a trapezoidalshape. More specifically, the trapezoidal current waveformindicates the higher average current and the lower peak value.In Fig. 1, this parallel capacitor appears as the four capaci-tors (Cp1–Cp4) that have roles the aforementioned advantagesas well as the voltage divider for the diodes.

C. Pulse Discharging Module

The stored energy at the capacitor bank is dischargedthrough the switch, for the instantaneous pulse generation.The insulated gate bipolar transistor (IGBT) switch (1700 V,1000 A), snubber resistor (1 �, 400 W), snubber capaci-tor (1800 V, 40 μF), and snubber diode (1800 V, 120 A, pulse1800 A) are used.

The purpose of the snubber circuit is generally used toreduce the switching loss and one of the other role of snubberin this application is limiting the turn-OFF peak voltage.

CHO et al.: PULSED-POWER SUPPLY FOR LIGHT SINTERING 2685

Fig. 2. Operation mode diagrams of the proposed three-phase half-bridge SPRC.

The snubber capacitor was selected as 40 μF based on thePSPICE simulation result to obtain proper turn-OFF peakvoltage and snubber resistor was decided as 1 �, 400 W fromthe turn-ON peak current and power dissipation. The diode D7,in conjunction with the lamp, creates the freewheeling currentpath when the IGBT is open.

III. ANALYSIS AND DESIGN OF THE PROPOSED

THREE-PHASE HALF-BRIDGE SPRC

A. Operation Mode Analysis

To analyze the operation mode, the fundamental harmonicanalysis is adopted. This method is suitable for simplifyingand inducing the delta-connected resonant current equation.When the fundamental harmonic analysis is applied, the deltaconnection is changed to the star connection, and thereafter,the inverter is considered as the ac input voltage sourcewhich has the angular frequency (ω) reflecting the switchingfrequency of inverter switches and the parallel capacitors areomitted to simplify analysis. The output load resistance (R)and turns ratio (n) are reflected in the effective resistance (Re)at the primary sides of the transformers.

The process of the proposed three-phase half-bridge SPRCcan be divided into six modes within one cycle. The modediagrams (Fig. 2) and operation waveforms (Fig. 3), includ-ing the resonant currents and switching signals, are shown.In Fig. 3, the three-phase resonant currents [I(Ls1–3)] andinput capacitor current [I(C1)] are depicted with the six gateswitches condition.

Mode 1: The resonant current of the series resonant induc-tor 1 (Ls1) increases rapidly when SW3 is turned on andSW6 is turned off. At the initial moment of mode 1, the currentis negative. This negative current discharges the drain–sourcecapacitor of SW3, and after totally discharging it, flowsthrough the diode (D3). By contrast, the drain–source capacitorof SW6 is charged to reduce the turn-OFF loss. Therefore,

Fig. 3. Operation waveforms of the proposed pulsed-power converter.

the energy loss is small, because the turn-ON transition is thezero voltage zero current (ZVZC) switching, and the turn-OFF

transition is compensated by the snubber capacitor. When thecurrent direction is changed to positive, SW3 finally conductsand the rising waveform of the current of Ls1 is affectedby the processes of charging (Cp2 and Cp3) and discharging(Cp1 and Cp4) the parallel resonant capacitors.

The current of Ls1 is calculated based on referred valuefrom the delta to the star connection. The inverter is considered


as the ac input voltage and (1) is derived from the equivalentcircuit model based on operation modes. The resonant currentsof Ls2 and Ls3 are just phase shifted by 120°

ILs1(t) = A(E + D)

B DE(C + D + E)

2

πVC1 sin (ωt) (1)

where

A =(

3Re + iωLS1 + iωLS2 + iωLS3 − i

ωCS1

− i

ωCS2− i

ωCS3

)2

B = 3Re + iωLS1 + iωLS2 + iωLS3

− i

ωCS1− i

ωCS2− i

ωCS3

C = Re + iωLS2 − i

ωCS2

D = Re + iωLS3 − i

ωCS3

E = Re + iωLS1 − i

ωCS1

Re = 3VOUT

IOUTn2 .

Mode 2: Because SW1 is open, the resonant current throughLs3 plummets. Similar to mode 1, the processes of chargingthe capacitor of SW1 capacitor and discharging the capacitorof SW4 occur first. The sufficient energy stored in the resonanttank is needed for the discharging it. Furthermore, SW4 willbe damaged at the starting moment of mode 2 if the capacitorof SW4 has retained voltage. This leads to a current surge. Theequation of the resonant current is slightly altered because ofthe alteration of the connection between the inverter MOSFETswitches and the resonant tanks

ILs1(t) = A(E + D)

B DE(C + D + E)

4

πVC1 sin (ωt) (2)

where


ωCS1


ωCS3


ωCS2.

Mode 3: Immediately after SW2 is closed, both the currentof Ls1 and the current of Ls2 are conducted through D2.The current of Ls2 rapidly surges from a negative directionto a positive direction. This means that all the currents of theresonant inductors flow out through the SW4. The resonantcurrent equation is expressed as

ILs1(t) = A(E + D)

B DE(C + D + E)

2

πVC1 sin (ωt) (3)

where


ωCS3


ωCS2


ωCS1.

Mode 4 to 6: Only the current directions are changed, andthe aforementioned modes are repeated.

IV. DESIGN PROCEDURE OF THE

PROPOSED POWER SUPPLY

The first step of the proposed pulsed-power supply designis the selection of the output power. More specifically,the calculation of the output voltage and current is nec-essary for determining the value of the resonant current.The proposed pulsed-power supply is designed to gener-ate 36 kW of power with a 1.5-kV output voltage and a24-A output current. All the parameters are designed based onthe relationship between this output current and the resonantcurrents. The SPRC is composed of three parallel secondarytransformers, such that only the 8-A current flows by thesecondary side of each transformer. The peak current ofthe secondary transformer (Isec,peak) can be calculated usingthe root mean square equation, with the approximated sinewaveform.

The calculated resonant peak current at the secondary trans-former side (Isec,peak) makes it possible to calculate the peakresonant current at the primary transformer side (Ipri,peak).This is expressed in the following equation [17]:

Ipri,peak = Isec,peak × Wsecondary

Wprimary= Isec,peak × n (4)

where

Wsecondary turns of transformer primary winding;Wprimary turns of transformer secondary winding.

This equation suggests the relationship between the fig-ures of peak current and the turns ratio (n) of the transformer,which is considered to avoid a transformer saturation. Boththe current values and the voltage values could be expressedby another equation, which reveals the relationship betweenthe transformer primary winding voltage (Vpri), secondarywinding voltage (Vsec), and turns ratio (n)

Vpri = Vsec

n. (5)

After the aforementioned parameters are calculated by theoutput current, the resonant impedance (Z0), resonant induc-tance (Ls) and resonant series capacitance (Cs), are given by

Z0 = Vdc,min − Vpri − VCs

Ipri,peak(6)

Ls = Z0

2π × f0

∼= 12.3 μH (7)

Cs = Ls

z20

∼= 1.86 μF (8)


where

Vdc,min minimum dc-link voltage;VCs initial voltage of series resonant capacitor;f0 resonant frequency ( f0 = 1/2π

√LsCs).

The value of Ls and Cs are calculated using the followingsteps, using (6)–(8). Ninety percent of the rated input volt-age (510 V) is chosen the minimum dc link voltage (Vdc,min),in order to guarantee the converter performance against theinput voltage fluctuation. The initial condition of the seriesresonant capacitor (VCs) is zero. The resonant frequency ( f0)should be determined by taking into account the rectifierconduction angle, ratio of output voltage and peak of thefirst harmonic of the primary voltage, displacement of thefundamental voltage and current on the primary side, anddimensionless parameters [25]. Overall, the resonant frequencyand the switching frequency are selected at 33.2 and 120 kHz,respectively. The switching frequency is almost four timeslarger than the resonant frequency. This is because even if theinherent drain–source capacitor has a small value, the higherswitching frequency ( fs) is better for energy storage. Theselected SIC MOSFET switches (CAS300M12BM2) couldsatisfy the designed frequency operation region and have asmall drain–source capacitance (Cds = 2.4 nF), which has therole of the turn-OFF snubber.

The resonant inductor (Ls) is used by the leakageinductor of the transformer. To achieve the value of theresonant inductance, a specially designed transformer isused, with a winding turn ratio of 10:46, wound into aUU core (PC40 UU120X160X20). The sufficient distanceneeded for the isolation and leakage inductance for resonanceis achieved by introducing an intentionally designed bobbin.Consequently, the transformer steps up the input voltageof 510 V to the output voltage of 1500 V.

Last, the parallel resonant capacitor value is selected tomake the trapezoidal waveform of resonant current. Duringthis, the parallel resonant capacitor is charging, and the res-onant impedance and frequency are changed. This changedvalue is called the second resonant impedance (Z ′

0) andresonant frequency ( f ′

0)

Z ′0 =

√Ls

C ′s

(9)

f ′0 = 1

2π

√1

LsC ′s

(10)

where C ′s = (n2CsCp/(Cs + n2Cp));

Table I arranges all the parameters that are used to designthe proposed high-voltage pulsed-power supply. The usedreal values of some parameters are suggested together. Thisadjustment occurs because of the differences between theexpected design values and the real values for satisfying therated power.

V. SIMULATION RESULTS

A. Three-Phase Half-Bridge SPRC

Both the designed and real parameters in Table I aresimulated in order to verify the rated 36 kW output power.

TABLE I

DESIGN PARAMETERS OF THE PROPOSED PULSED-POWER SUPPLY

Fig. 4. Output voltage and resonant current of the simulation using realparameters (time: 0.5 μs/div., voltage: 200 V/div., and current: 10 A/div.).

Fig. 5. Comparison of the turn-OFF peak voltage which is changed by thesnubber capacitance (time: 10 μs/div. and voltage: 200 V/div.).

Focusing on the modified resonant inductance and the snubbercapacitance, which operate at a high switching frequency,the values of the peak resonant current and output voltageare checked. In Fig. 4, the simulation results of the realparameters are shown; the peak resonant current at the primarytransformer side (Ipri,peak) is 68 A, and the output averagevoltage is 1500 V at 163 kHz.

B. Pulse Discharging ModuleThe shorter the pulsewidth, the higher the peak voltage

generated on the switch. Hence, the 1 ms pulse is the standard


Fig. 6. Three-phase half-bridge SPRC with delta connection.

width for determining the value of the snubber components,among the 1 ms 20 Hz to 20 ms 1 Hz pulses. The values ofsnubber capacitor are simulated by 5–35 μF, and the results areshown in Fig. 5. Although the result of using 35 μF is better interms of the turn-OFF peak protection, 25 μF is selected for thecapacitor value, owing to the amount of power consumption.The energy stored in the snubber capacitor is expressed by

E = (CV 2)/2. (11)

VI. EXPERIMENTAL RESULTS

The experiments of the proposed pulsed-power supply arecarried out with the rated dummy load, as well as with theactual load. The rated dummy load (62.5 �) experimentverifies the normal operation of the three-phase half-bridgeSPRC. The actual load, which is composed of the 52.8 mFcapacitor bank with a resister load (1.25 �), is introduced toconfirm the pulse discharging performance. The Figs. 6 and 9show the actual structure of the three phase half bridge SPRCand pulse discharging module, respectively. The results of bothload tests are in accordance with the simulation results.

A. Experiment With Rated Dummy LoadThe rated dummy load (62.5 �) is directly connected to the

output terminals of the high-voltage half-bridge SPRC. Theinput voltage is increased from zero to rated voltage, using aslidac transformer. Thereafter, the rated operation is verified,and the three-phase ac is directly applied to the input voltage.

The pulsed-power supply was operated at the rated fre-quency of 163 kHz. Moreover, the output voltage, resonantcurrent, and inverter switch drain–source voltage waveformsare measured using the oscilloscope (Fig. 7). When the direc-tion of the resonant current is negative, the switch is closed.This negative resonant current flows through the antiparalleldiode of the inverter MOSFET, and the ZVZC switching isrealized. Finally, the MOSFET conducts the current when thedirection of the resonant current is changed to positive.

To specify the performance and efficiency, Fig. 8 showsthe power factor and efficiency. The low value of the outputpower over the rated power indicates high frequency, dueto the characteristic of SPRC. Therefore, the highest effi-ciency is almost 96% when the lowest switching frequencyis used. The remarkable point is that the power factor isalways a high value, no matter how the switching frequencyincreases or decreases. The omission of the PFC module,

Fig. 7. Experimental waveforms of the 36 kW rated operation (inverterswitch drain–source of 200 V/Div., resonant current of 20 A/Div., outputvoltage of 500 V/Div., and 2 μs/Div.).

Fig. 8. Efficiency and power factor with measured data of rated input power.

Fig. 9. Pulse discharging module.

as well as the low value of the dc link capacitor, contributesto the power factor of 0.96.

B. Experiment With Actual Load

The actual load means that the proposed three-phase half-bridge SPRC is in conjunction with the 52.8 mF capacitorbank, and that through this bank, several pulses are appliedto the resistor load (1.25 �). The 1.5 kV and 1.2 kA pulsesare accomplished under various pulse conditions. From 1 Hz20 ms to 20 Hz 1 ms, pulses are tested to verify the ratedoperation and stability.

The result of using snubber circuits is shown in Fig. 10.When the IGBT switch is opened, the 1500 V capacitor bank


Fig. 10. Experimental pulse waveforms of the 36 kW rated operation with20 Hz, 1 ms pulse (load voltage of 200 V/Div., load current of 200 A/Div.,IGBT collect-emitter voltage of 200 V/Div., and 10 ms/Div., 200 μs/Div.).

voltage is applied to the IGBT collect emitter. The maximumrated collect-emitter voltage of the IGBT is 1700 V, so thatthe used 25 μF snubber capacitor makes a turn-OFF voltagemargin for stable operation that is similar to the one in theaforementioned simulation result (Fig. 5). This implies thatthe values used for the snubber diode, resistor and capacitor,are suitable for the proposed pulsed-power supply.

VII. CONCLUSION

The main components, which are the resonant inductor,snubber capacitor of the inverter switch, and power factormodule at the input part, are replaced or omitted for the simplestructure and the low manufacturing cost. Although the essen-tial component values are reduced, both the simulation resultsand experimental results show that high performances areachieved. For example, the rated efficiency is almost 96% andthe power factor is consistently 0.96 from a low switchingfrequency to a high switching frequency. The stable operationof 36-kW high pulse energy is also guaranteed by using theIGBT switch, which is comprised of a snubber circuit forreducing the turn-OFF peak voltage. In summary, the proposedpulsed-power supply, which uses the SIC components fora high switching frequency, exhibits outstanding efficiency,stability, and a simple structure, all of which are verified bythe simulation and experimental results.

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Chan-Gi Cho received the B.S. degree in informa-tion display engineering from Kyung-Hee Univer-sity, Seoul, South Korea, in 2016. He is currentlypursuing the M.S. degree with the Department ofEnergy Engineering, Chung-Ang University, Seoul.

His current research interests include resonantconverters and high-voltage pulse power system.


Seung-Ho Song received the B.S. degree in elec-trical engineering from Kwang-Woon University,Seoul, South Korea, in 2016.He is currently pursuingthe M.S. and Ph.D. degrees with the Department ofEnergy Engineering, Chung-Ang University, Seoul.

His current research interests include soft switchedresonant converter applications and high-voltagepulsed-power supply systems.

Su-Mi Park received the B.S. degree in energysystems engineering from Chung-Ang University,Seoul, South Korea, in 2017. She is currently pursu-ing the M.S. degree with the Department of EnergyEngineering, Chung-Ang University, Seoul.

Hyeon-Il Park received the B.S. degree fromDan-Kook University, Jukjeon, South Korea, in2008. He is currently pursuing the M.S. degree withthe Department of Energy Engineering, Chung-AngUniversity, Seoul.

He is currently with semisysco co., Seoul. His cur-rent research interests include high-voltage pulsed-power supply systems including the soft switchedresonant converter applications for light sinteringsystem.

Jung-Soo Bae received the B.S. degree in electricalengineering from Changwon National University,Changwon, South Korea, in 2017. He is currentlypursuing the M.S. and Ph.D. degrees with the Uni-versity of Science and Technology, Deajeon, SouthKorea.

His current research interests include soft switchedresonant converter applications and high-voltagepulsed-power supply systems.

Sung-Roc Jang (M’17) was born in Daegu,South Korea, in 1983. He received the B.S. degreefrom Kyungpook National University, Daegu.,in 2008, and the M.S. and Ph.D. degrees in electricalengineering from the University of Science andTechnology (UST), Deajeon, South Korea, in 2011.

Since 2011, he has been a Senior Researcher withthe Electric Propulsion Research Center, Korea Elec-trotechnology Research Institute, Changwon, SouthKorea. In 2015, he joined the Department of EnergyConversion Technology, UST, as an Assistant Pro-

fessor. His current research interests include high-voltage resonant convertersand solid-state pulsed-power modulators and their industrial applications.

Dr. Jang received the Young Scientist Award at 3rd Euro–Asian PulsedPower Conference in 2010 and the IEEE Nuclear Plasma Science SocietyBest Student Paper Award at IEEE International Pulsed Power Conferencein 2011.

Hong-Je Ryoo (M’17) received the B.S., M.S.,and Ph.D. degrees in electrical engineering fromSungKyunkwan University, Seoul, South Korea,in 1991, 1995, and 2001, respectively.

From 2004 to 2005, he was a Visiting Scholarwith WEMPEC, University of Wisconsin-Madison,Madison, WI, USA. In 2008, he joined the Elec-tric Propulsion Research Division as a PrincipalResearch Engineer, where he was a Leader with thePulsed Power World Class Laboratory. From 1996 to2015, he was with the Korea Electrotechnology

Research Institute, Changwon, South Korea. He was a Professor with theDepartment of Energy Conversion Technology, University of Science andTechnology, Deajeon, South Korea. In 2015, he joined the School of EnergySystems Engineering, Chung-Ang University, Seoul, where he is currentlyan Associate Professor. His current research interests include pulsed-powersystems and their applications, as well as high-power and high-voltageconversions.

Prof. Ryoo is a member of the Korean Institute of Power Electronics andthe Korean Institute of Electrical Engineers.

IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 45, NO. 10...

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