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Transcript of [IEEE 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology'...

Page 1: [IEEE 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology' Conference Proceedings - Sevastopol, Crimea, Ukraine (2003.9.8-2003.9.12)] 13th International

nPMMEHEHME KPEMHMEBOrO CIMOflA nn5l TEMflEPATYPHblX M3MEPEHMa B CMnbHblX CBL1 flOnFlX

MocKoscKuii socydapcmsennbiii yiiusepcumem UM. M. B. J7oMonocosa O>usuvec~uii qaKynbmem

men. (095)939-2094, e-mail: afonin@phys. msu. su

A ~ O H M H g. r., KaHyHOB E. f‘.

6OpO6bbesbi rOpbl, MocKsa, 119992, fen-2, POCCUH

TA MOXeT 6blTb MCnOnb30BaH B AByX PeXMMaX. 1. B pexme M ~ M ~ P ~ H M F I C O ~ C T B ~ H H O TeMnepaTypbi.

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Puc./Fig. 1

485 2003 13th Int. Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’ZOO3). 8-12 September, Sevastopol, Crimea. Ukraine 0 2003: CriMiCo’2003 Organizing Committee; Weber Co. ISBN: 966-7968-26-X. IEEE Catalog Number: 03EX697

Page 2: [IEEE 2003 13th International Crimean Conference 'Microwave and Telecommunication Technology' Conference Proceedings - Sevastopol, Crimea, Ukraine (2003.9.8-2003.9.12)] 13th International

APPLICATION OF SILICON DIODE FOR TEMPERATURE MEASUREMENTS IN

STRONG MICROWAVE FIELDS

Afonin D. G., Kanunov Ye. R. Physics Department, Moscow State University

Vorobyovy Gory, Moscow, GSP-2, Russia, 119992 phone +7 (95) 9392094, e-mail: [email protected]

Abstract - This paper discusses the application of silicon diode in the research of EM distribution and temperature meas- urements in strong microwave fields. Advantages of using sili- con diodes for these purposes are outlined.

I. Introduction Temperature and EM-field distribution measurements in mi-

crowave fields are often required at present. Problems encoun- tered during these procedures may be tackled by placing a sensor element in the field.

1 1 . Main part Several types of sensor elements have been tested, includ-

ing thermocouple, thermistor, etc., but all of them have dis- played a number of drawbacks. We have focused on a silicon diode as an optimal sensor element which in the process of measurements was connected to a bridge circuit.

The silicon diode was used in two modes: 1. Temperature measurements. 2. Electromagnetic intensity measurements, in which case it

is necessary to cover the diode with strong absorber.

Ill. Conclusion Silicon diodes may be used as high-quality sensor elements

in temperature measurements and during electromagnetic in- vestigations (if placed inside a strong absorber shell made, for example, of graphite and epoxy resin mixture).

The error in temperature measurements, depending on the complexity of experimental setup, was +O.5...3.O0C; the error in the EM field space resolution measurements was +2mm at the frequency of about 2.5GHz.

2003 13th Int. Crimean Conference “Microwave & Telecommunication Technology” (CriMiCo’ZOO3). 8-12 September, Sevastopol, Crimea, Ukraine 0 2003: CriMiCo’ZOO3 Organizing Committee; Weber Co. ISBN: 966-7968-26-X. IEEE Catalog Number: 03EX697 486