HK IEEE EMC Chapter.ppt [Mode de compatibilité]emc/20130502P2.pdf · The SEISME collaborative...
Transcript of HK IEEE EMC Chapter.ppt [Mode de compatibilité]emc/20130502P2.pdf · The SEISME collaborative...
07/05/2013
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Taking into Account Obsolescence in the EMCPerformance of Integrated Circuits and Systems
Richard PerdriauProfessor
Measurement and Modelling Standards in EMC of Integrated Circuits: an Application to Obsolescence Issues in ICs and
Systems
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ESEO-EMC – Angers, [email protected]
http://eseo-emc.fr/people/richard-perdriau
IEEE EMC HK Chapter Technical Seminar - May 2, 2013 - Richard PERDRIAU
IEEE EMC HK Chapter Technical SeminarMay 2, 2013
Outline
I. Introduction and rationaleI. Introduction and rationale
II. The SEISME collaborative project
III. Global methodology for obsolescence management
IV Case studies
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IV. Case studies
V. Conclusion
IEEE EMC HK Chapter Technical Seminar - May 2, 2013 - Richard PERDRIAU
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Outline
I. Introduction and rationaleI. Introduction and rationale
II. The SEISME collaborative project
III. Global methodology for obsolescence management
IV Case studies
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IV. Case studies
V. Conclusion
IEEE EMC HK Chapter Technical Seminar - May 2, 2013 - Richard PERDRIAU
EMC vs. obsolescence (1)
Increase in the life span of transportation systems• Automotive industry: more than one decade• Aircraft industry: several decades (B737: 1967-)• Aircraft industry: several decades (B737: 1967-)• LS of semiconductors < LS of equipment/systems
Need for maintenance of electronic systems• Several supply sources for electronic devices• Changes in technological and manufacturing processes
Expensive and demanding qualification processesAircraft industry: certification procedures
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• Aircraft industry: certification procedures
Critical role of EMC in safety• Responsible for several hazardous issues (cruise control)
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EMC vs. obsolescence (2)
• What happens from an EM point of view if a component within a system (IC on a PCB, PCB in a piece of equipment, piece of equipment in a system) is replaced by another one with the same functionalities, but with differences in fabrication?differences in fabrication?
Manufacturer 1(obsolete IC)
R.I.P.
Emission/immunity with IC manufacturer 1
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(obsolete IC)
Manufacturer 2 Emission/immunity with IC manufacturer 2
?
Keyword: prediction
The need for modelling: anticipating vs. coping with
With modelling
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Without modelling
E. Sicard
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Outline
I. Introduction and rationaleI. Introduction and rationale
II. The SEISME collaborative project
III. Global methodology for obsolescence management
IV Case studies
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IV. Case studies
V. Conclusion
IEEE EMC HK Chapter Technical Seminar - May 2, 2013 - Richard PERDRIAU
SEISME: introduction
SEISME = Simulation de l'Emission et de l'Immunitédes Systèmes et Modules Electroniques
• Simulation of the Emission and Immunity of Electronic Systems• Simulation of the Emission and Immunity of Electronic Systems and Modules
Funded by the Ministry of Industry• "Aerospace Valley" competitiveness cluster• Midi-Pyrénées region (main city: Toulouse)
Main contributors: automotive and aeronautical industry
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industry
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Introductory material borrowed from:C. Marot, E. Sicard, "EMC standards at IC level - Status of IEC and Technical
Goals of the SEISME Project", APEMC 2012, May 21-24, 2012, Singapore
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SEISME: contextEMC validation by measurement
Current state
Obsolescence: A change of component on a PCB due to obsolescence. The life span of electronic systems has become much longer than the one of semiconductor devices.
Modification
Future state
Computational EMC validation
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Multi-source: Within the whole production phase, an equipment/system manufacturer may change one or some of its component/subsystem suppliers for industrial and/or financial reasons.
Evolution: Within the whole life span of a system, it may be necessary to improve its functioning and/or its performance.
Re-use: Within the production phase, a piece of equipment may be re-used in another system, with minor specification and/or design changes.
SEISME: objectives
Develop virtual prototyping• Define tools, models, testing and computation methods for the
EMC analysis of a component or equipment change within its lifeEMC analysis of a component or equipment change within its lifespan
Improve virtual testing• Reduce the number of EMC requalification tests of a piece of
equipment and/or a system• Cut out the duration and cost of these tests
Propose modelling standards
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• Create a unified project within the IEC (International Electrotechnical Commission)
• This project should gather standard proposals of models andextraction methods for components, PCBs and equipment
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SEISME: approaches
Generic approach for obsolescence management
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SEISME: approaches
Black-box modelling• Define the EMC models of a piece of equipment without any
knowledge of individual device models and PCB routingknowledge of individual device models and PCB routing• Measurement-based modelling
White-box modelling• Define an EMC model by assembling lower-level models
(devices, PCB)• "Bottom-up" approach• Compatible with simulation procedures
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SEISME: workpackages (1)
WP0: management and disseminationWP1
M t f th l ti f di t d i t t d d i• Management of the evolution of discrete and integrated devicesfor the EMC validation and qualification of an electronic board
WP2• Analysis of a change of electronic board for the EMC validation
and qualification of a piece of electronic equipment
WP3• Management of the evolution of power modules for the EMC
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• Management of the evolution of power modules for the EMCvalidation and qualification of a piece of electronic equipment
WP4• Analysis of a change of electronic equipment for the EMC
validation and qualification of a whole system
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SEISME: workpackages (2)
WP5• Development of extraction and modelling methods for emission
and immunityand immunity
Main targets• WP1 and WP3: automotive manufacturers (single-board systems)• WP2 and WP4: avionics and aircraft manufacturers (multi-board
systems)• WP5: transverse (suited to all WPs)
Model boundaries
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• WP1 and WP3: component package• WP2: backplane connector• WP4: equipment connector
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Large businesses
AIRBUS, EADS IW, GERACCONTINENTAL, MEAS, RENAULT, VALEO
SEISME: partners
CST, SERMA, STUDELECNEXIO EPEA platform
Small and medium-sized businesses
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ESEO, IMS, IRSEEM, ONERA, SATIE, INSA Toulouse
Academic research
Outline
I. Introduction and rationaleI. Introduction and rationale
II. The SEISME collaborative project
III. Global methodology for obsolescence management
IV Case studies
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IV. Case studies
V. Conclusion
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Reminder: the ICEM-CE model
The ICEM-CE model for conducted emission
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PDN : passive distribution network – IA : internal activity – IBC : inter-block coupling
Reminder: the ICEM-RE model
The ICEM-RE model for radiated emissionUse of a network of electric and/or magnetic dipoles to
reproduce the 6 components of the EM fieldreproduce the 6 components of the EM field
y
z
r
l
θ
y
z
rθ
a
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x
y
φ
(a) (b)
xφ
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Reminder: the ICIM-CI model
The ICIM-CI model for conducted immunity
IB : immunity behaviour
DI
IB : immunity behaviour
DI : disturbance inputsDO : disturbance outputsDL : disturbance loadsOO : observable outputs
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Hierarchical modelling: from IC to PCB and equipment (1)
Printed Circuit Board (EBEM, EBIM)
Passive PDN
Integrated Circuit (ICEM, ICIM)
IA PDN
Equipment
Equipment (EQEM, EQIM)
DI
Distribution Network
IB Immunity behavioral
PDN
IEC 62433Σ,Π
IA Internal activity
PDN Board
Equipment
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Other integrated circuit
Other printed circuit board
C. Marot, E. Sicard, "EMC standards at IC level - Status of IEC and Technical Goals of the SEISME Project", APEMC 2012, May 21-24, 2012, Singapore
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Hierarchical modelling: from IC to PCB and equipment (2)
EBEM-CE/EBIM-CI (Electronic Board Emission/Immunity Model - Conducted)
• Gathers ICEM-CE/ICIM-CI models equivalent models of passive
DI
• Gathers ICEM-CE/ICIM-CI models, equivalent models of passivedevices, PCB trace models and connector models
• Bottom-up approach• Objective: use of circuit-level simulators (SPICE-based)
EQEM-CE/EQIM-CI (Equipment Emission/Immunity Model - Conducted)
• Gathers EBEM-CE/EBIM-CI models and cable harness (or other
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(interconnection) models
• Bottom-up approach
ExxM-Rx/ExxM-RI (Equipment Emission/ImmunityModel - Radiated): TBD
Reminder: abstraction levels
Black-box or white-box modelling?
• Uses S- or Z-parameters• ☺ Preserves confidentiality• ☺Well suited to equipment
• Must be related to physics• Less confidential
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manufacturers• ☺ Simpler to extract• Can be transformed into a behavioural SPICE netlist• Does not lead to any simple interpretation of observed phenomena
• ☺ Allows a better understanding of physical phenomena• ☺ Makes it easier to identify possible technological parameters• ☺ Provides clues for the prediction of technology-related trends
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Outline
I. Introduction and rationaleI. Introduction and rationale
II. The SEISME collaborative project
III. Global methodology for obsolescence management
IV Case studies
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IV. Case studies
V. Conclusion
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Case study: obsolescence of serial memories (1)
Serial memories are good candidates for obsolescence• Ubiquitous in consumer electronics (configuration storage)• Many different technologies (EEPROM Flash FRAM)• Many different technologies (EEPROM, Flash, FRAM)• Many different manufacturers• Same package (SO8), pinout and interface (SPI)• Same protocol: almost all memories are interchangeable
Main interrogations• Do all technologies have comparable EMC performance?• Within a given technology do all memories from all manufacturers
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Within a given technology, do all memories from all manufacturersshow comparable EMC performance?
• Are memories sensitive to EMI in all operating modes?• How does a change of manufacturer impact the EMC behaviour of a
whole electronic board?• Is it possible to predict the behaviour of upcoming technologies?
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Case study: obsolescence of serial memories (2)
Development of specific boards for memory testing
USB to SPI interface
RF injection path
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Specific DPI board
The whole following work by M. Amellal (Ph.D student at ESEO), submitted for publication.
Case study: obsolescence of serial memories (3)
First step: PDN extraction (S-parameters)• Two 512-kbit EEPROMs from different manufacturers (AT, MCHP)
Vdd
AT25512Z11 parameter of the VDD pin of the AT25512 EEPROM
Measurement (red) and first-order model (blue)
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MOS capacitance
25LC512
Series resistance
Z11 parameter of the VDD pin of the 25LC512 EEPROM
Measurement (red) and first-order model (blue)Passive
capacitance
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Case study: obsolescence of serial memories (4.1)
Second step: DPI test• Test 1: disturbed write, undisturbed read• Test 2: disturbance between write and read
Write Read
Write Read • Test 3: undisturbed write, disturbed read• Difference: up to 15 dB Write Read
15 dB
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Case study: obsolescence of serial memories (4.2)
Second step: DPI test• Differences among memory technologies• EEPROM (25LC512), Flash (A25L010), FRAM (FM25W256)• Immunity: EEPROM > Flash > FRAM
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Case study: obsolescence of serial memories (5)
Third step: technological analyses
AT25512
Simple/double bonding Different silicon thicknesses Different surfaces and layouts
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25LC512
Cooperation with M. Medina (SERMA Technologies, Bordeaux, France), submitted for joint publication.
Case study: obsolescence of serial memories (6)
Fourth step: ICIM-CI modelling for immunity prediction• Use the model to predict immunity with an additional 100 pF cap.• The whole board is modelled including parasitics• Good prediction with respect to measurement uncertainties (VNA)
Unconstrainedsimulation
Amplifier limit
S-parameter block
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Comparison between measurement and modelling for the AT25512 EEPROM in
disturbed write testingModelling of the whole PCB and DPI test setup
using the ICIM-CI model of the memory
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Case study: obsolescence of serial memories (7)
Significant differences among interchangeable memories
• Differences in immunity among storage technologies• Differences in immunity among storage technologies• Up to 15 dB difference in immunity between two EEPROMs (maybe
more for other manufacturers?)
Possible explanations• MOS capacitance = difference in channel length and on-chip
capacitance• EMC countermeasures: on-chip capacitance, on-chip resistance,
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double bonding
How can we predict this effect on the whole PCB?• Use the ICIM-CI model
Case study: obsolescence of microcontrollers (1)
Enhancing the performance of an embedded system often requires an upgrade of its microcontroller
• ARM architectures are ubiquitous in embedded systems• ARM architectures are ubiquitous in embedded systems• Some ARM microcontrollers are pin-to-pin compatible• Case study: replace an ARM7TDMI (ATMEL AT91SAM7256) with a
Cortex-M3 (ATMEL AT91SAM3S4B) with different architectures andmanufacturing technologies
Main interrogations• Are newer technologies more or less immune to EMI?
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• Is there a relation between S-parameters and immunity to EMI forvery complex systems?
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Case study: obsolescence of microcontrollers (2)
First step: PDN extraction (S-parameters)
Z11 parameter of the VDDIN pin of the SAM7S µC
Measurement (red) and first-order model (blue)
First-order PDN model of the VDDIN pin of the SAM7S µC
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Z11 parameter of the VDDIN pin of the SAM3S µC
Measurement (red) and first-order model (blue)
First-order PDN model of the VDDIN pin of the SAM3S µC
Note: the Flash block is powered by VDDIN
Case study: obsolescence of microcontrollers (3)
Second step: DPI test• Different results depending on the injection pin• SAM7 more sensitive than SAM3 on VDDIN, opposite for VDDIO• No clear relation between S- or Z-parameters and immunity• Immunity drop between 600 and 700 MHz (SAM3) to be explained• Note: unrecoverable errors (bootloader reload) found at 1.25 GHz
(SAM7) and 1.1 GHz (SAM3)
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DPI test on the VDDIN pin DPI test on the VDDIO pin
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Outline
I. Introduction and rationaleI. Introduction and rationale
II. The SEISME collaborative project
III. Practical examples
IV Advanced measurement and modeling methods
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IV. Advanced measurement and modeling methods
V. Conclusion
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Conclusion
Collaborative project gathering industry and academia
Hierarchical modelling methodHierarchical modelling method• IC-level (ICEM/ICIM), board-level (EBEM/EBIM) and equipment-
level (EQEM/EQIM) modelling• Bottom-up approach
Prediction of the effects of obsolescence on EMC• "White-box" approach: identification of variable parameters• Substantial differences in immunity (more than 15 dB) for the
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• Substantial differences in immunity (more than 15 dB) for thesame functionality
• Necessity to take into account obsolescence in EMC of complexsystems (automotive, aircraft)