High Speed Fully Integrated On-Chip DC/DC Power Converter
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Transcript of High Speed Fully Integrated On-Chip DC/DC Power Converter
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High Speed Fully Integrated On-Chip DC/DC Power Converter
By
Prabal [email protected]
Sponsor:
National Aeronautics and Space Administration (NASA)
Advisor
Dr. Herbert Hess
Microelectronics Research and Communications Institute (MRCI)
University of Idaho
February 8, 2007
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OutlineOutline
Overview
Design of the High Speed DC/DC Power Converter
Simulation Results
Layout
Measured Results
Planned Future Work
Conclusion
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Overview
Last 15 years has
seen a significant
reduction in size of
portable electronics
devices
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Overview
Portable system is a
collection of various sub-
systems
Sub-systems may demand
multiple input voltages and
variable currents
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Overview
Main power supply 3.3 Volts
RFTranceiver
AnalogSection
Digital Section
1.2 V 15 mA 1.5 V 10 mA
3.3 V 50 mADC/DC Power Converter
DC/DC Power Converter
On-chip fully integrated DC/DC power converters that provides point of use power conversion can be a possible solution
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Overview
All switch-mode power converters use inductor
In the past, most DC/DC power converter were operated
at low frequency and with discrete off chip inductor
Quality factor (Q) of an inductor is the function of
frequency
higher Q can be achieved at high frequency
RLQ
f
Q
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Overview
Benefits with high frequency switching
Integrated solution for the power converter
Reduced passive size
Higher Q inductor available
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Overview
Challenges with high frequency design
Parasitic capacitance
Power dissipation
Noise
Attenuation
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Design of the High Speed DC/DC Power Converter
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Sub-Components
Sub-components used in the power converter are
• A Buck Converter
• Two Comparators
• A Voltage Control Oscillator (VCO)
• A Charge Pump
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Block Diagram
VDD
VCO
Ipump
Ipump
COMPARATOR
-
+
COMPARATOR
-
+
LoadVDD
Vref
Con
trol
V
olta
ge
ChargePump
BuckConverter
Vout
1.5V
<1.5V01
V
t
3.3V
0V
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Buck Converter
VDD=3.3V
Load
NMOSW=300um l=350nm
L=3.71 nH
C=180pF
3.3V
Vout = D*VDD
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Comparator
Amplification stage
Decision making Stage
Buffer stage
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Ring VCO
VDD VDDVDDVDD
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Charge Pump – Cadence View
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Simulation Results
Cadence Spectre
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Simulation Results
Output Voltage waveform has two kinds of output ripples
•High frequency ripple due to switching at 1 GHz
•Low frequency ripple due to control loop at 26 MHz
Output Voltage = 1.5 V
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Simulation Results
•High frequency ripple is 19 mV
•Low frequency ripple is 65mV
Output waveform
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Simulation Results
Vout with variable load
• Vout changes with a change in the loading condition, but it takes less than 48 ns for the control loop to restore the output to the required voltage level
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Simulation Results
•Comparator produces logic 1 and 0 depending upon the output of the buck converter
Comparator Out
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Simulation Results
• Logic 1 or 0 from the comparator controls the operation of charge pump.
•Logic 1 charges the capacitor
•Logic 0 discharges the capacitor
Charge Pump Out
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Simulation Results
VCO Out
•VCO produces a near triangular wave of 1.02 GHz
CL
Rp
Rn
VDD
RCt
eVDDV
*
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Simulation Results
PWM
•Duty-cycle of the PULSE driving the buck converter switch is altered based upon the near DC charge pump output voltage
•Basic operation is to shift the DC level of the VCO signal to change the Duty-cycle of the PULSE
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Simulation Results
Iout
• Buck converter can supply upto 20mA of peak current.
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Simulation Results
Vo=1.1 V
Vo=1.5 V
Vo=1.4 V
Vo=1.3 V
Vo=1.8 V
• Power converter has output range of 1.0 V to 1.8 V, but limited to loading conditions
•Peak current of 20mA can be drawn only in the range of 1.0 V to 1.8 V
•Output voltage range is limited by duty-cycle and comparator
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Simulation Results
PULSE with variable duty cycles
• Control loop created different duty cycles to adjust converter output
Vo=1.1 V
Vo=1.5 V
Vo=1.3 V
Vo=1.8 V
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Power Converter Layout
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Layout NMOS Closeloop – Cadence View
CAPACITORBANK
INDUCTOR
CONTROL CIRCUIT
• Size 1180u x 900u Picture of a Fabricated Chip - NMOS
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Layout PMOS Closeloop– Cadence View • Size 1180u x 900u Picture of a Fabricated Chip - PMOS
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Measured Results – Preliminary
Output voltage Max Current drawn
1.0 V 20 mA
1.2 V 20 mA
1.5V 20 mA
1.8 V 20 mA
2.0 V 19 mA
2.2 V 17 mA
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Planned Future Work
Increase the switching frequency to achieve
higher Q for inductor
smaller passives
Increase efficiency
Eliminate low frequency ripple
Use the concept over to manufacture power converters
in the industrial basis
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Planned Future Work – Control Ripple
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Conclusion
Fully integrated DC/DC converter realized in silicon
The converter takes 3.3V supply and can successfully
realize voltage from 1.0 V to 1.8 V while supplying up to
20 mA of current
Diameter of the power converter is 1180u x 900u
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Thank You!Thank You!
AcknowledgementsI would like to express my deep gratitude to
Mr. Parag Upadhyaya, Washington State University
Dr. Deukhyoun Heo, Washington State University
And MRCI team
For technical discussion and support
AcknowledgementsI would like to express my deep gratitude to
Mr. Parag Upadhyaya, Washington State University
Dr. Deukhyoun Heo, Washington State University
And MRCI team
For technical discussion and support
University of IdahoUniversity of Idaho
February 8, 2007February 8, 2007
High Speed Fully Integrated On-Chip DC/DC Power Converter