High Power SPT & Rugged Type IGBT Module1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00 IGBT : DIODE :...
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Copyright@Dawin Electronics Corp. All right reserved May. 2009 DM2G150SH12A Description DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Features ☞ High Speed Switching ☞ BV CES = 1200V ☞ Low Conduction Loss : V CE(sat) = 1.9V (typ.) ☞ Fast & Soft Anti-Parallel FWD ☞ Short circuit rated : Min. 10uS at TC=100℃ ☞ Reduced EMI and RFI ☞ Isolation Type Package Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Absolute Maximum Ratings @ T j =25℃(Per Leg) Symbol Parameter Ratings Unit Conditions Equivalent Circuit Equivalent Circuit and Package Package : 7DM-3 Series Please see the package out line information V CES V GES I C I CM (1) I F I FM T SC P D T j T stg V iso TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Maximum Lead Temp. for soldering Purposes, 1/8” from case for 9 seconds Mounting screw Torque :M6 Power terminals screw Torque :M6 1200 ±20 200 150 300 150 300 10 1100 -40 ~ 150 -40 ~ 125 2500 260 4.0 4.0 V V A A A A A uS W ℃ ℃ V ℃ N.m N.m - - Tc = 25℃ Tc = 80℃ - Tc = 100℃ - Tc = 100℃ Tc = 25℃ - - AC 1 minute - - High Power SPT + & Rugged Type IGBT Module 6 7 5 4 ① ② ③ 1/6 Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Transcript of High Power SPT & Rugged Type IGBT Module1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00 IGBT : DIODE :...
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G150SH12A
DescriptionDAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are significant portion of the total losses.
Features☞ High Speed Switching☞ BVCES = 1200V ☞ Low Conduction Loss : VCE(sat) = 1.9V (typ.)☞ Fast & Soft Anti-Parallel FWD☞ Short circuit rated : Min. 10uS at TC=100℃☞ Reduced EMI and RFI☞ Isolation Type Package
ApplicationsMotor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS
Absolute Maximum Ratings @ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equivalent Circuit
Equivalent Circuit and Package
Package : 7DM-3 Series
Please see the package out line information
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
Collector-Emitter VoltageGate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage Maximum Lead Temp. for solderingPurposes, 1/8” from case for 9 secondsMounting screw Torque :M6Power terminals screw Torque :M6
1200±20
200
150
300
150
300
10
1100
-40 ~ 150
-40 ~ 125
2500
260
4.0
4.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
--
Tc = 25℃
Tc = 80℃
-
Tc = 100℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
High Power SPT+ & Rugged Type IGBT Module
67
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① ② ③
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Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G150SH12A
Electrical Characteristics of IGBT @ TC=25℃ (unless otherwise specified)
Symbol ParameterValues
UnitConditionsMin. Typ. Max.
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
1200
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
1.9
2.2
11
0.8
0.5
180
100
450
75
10
7.5
17.5
-
1250
180
600
-
-
8
1.5
±250
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V/℃
V
mA
nA
V
V
nF
nF
nF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC = 1.0mA
VGE = 0V , IC = 1.0mA
IC =3.0mA , VCE = VGE
VCE = 1200V , VGE = 0V
VGE =±20V
IC=150A, VGE=15V @TC= 25℃
IC=150A, VGE=15V @TC=100℃
VGE = 0V , f = 1㎒
VCE = 25V
VCC = 600V , IC =150A
VGE = ±15V
RG = 6Ω
Inductive Load
VCC = 600V, VGE = ±15V
RG =6Ω @TC = 100℃
VCC = 600V
VGE =± 15V
IC = 150A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
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Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G150SH12A
Electrical Characteristics of FRD @ TC=25℃ (unless otherwise specified)
Symbol ParameterValues
UnitConditionsMin. Typ. Max.
IF=150A
IF=150A, VR=600V
di/dt= -300A/uS
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Diode Forward Voltage
Diode Reverse
Recovery Time
Diode Peak Reverse
Recovery Current
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.7
1.8
160
175
50
65
4000
5688
1.9
-
-
-
-
-
-
-
V
nS
A
nC
Thermal Characteristics and Weight
Symbol ParameterValues
UnitConditionsMin. Typ. Max.
Junction-to-Case(IGBT Part, Per 1/2 Module)
Junction-to-Case(DIODE Part, Per 1/2 Module)
Case-to-Sink ( Conductive grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.11
0.25
-
360
-
-
0.04
-
RθJC
RθJC
RθCS
Weight
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Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G150SH12A
0
5
10
15
20
0 2.5 5 7.5 10 12.5 15 17.5 200
5
10
15
20
0 4 8 12 16 20
0
100
200
300
0 1 2 3 4 5 6 7 8
0
100
200
300
0 1 2 3 4 5 6 7 8
0
100
200
300
0 1 2 3 4 5 6 7 8
0
50
100
150
200
0.1 1 10 100
Performance Curves
Duty cycle = 50%TC=125℃Power Dissipation = 165W
Common EmitterTC=25℃
200A
150A
IC=100A
Common EmitterTC=125℃
Collector – Emitter Voltage, VCE [V]
Col
lect
or C
urre
nt,
I C[A
]
Collector – Emitter Voltage, VCE [V]C
olle
ctor
Cur
rent
, I C
[A]
Collector – Emitter Voltage, VCE [V]
Col
lect
or C
urre
nt,
I C[A
]
Gate – Emitter Voltage, VGE [V]
Col
lect
or –
Em
itter
Vol
tage
, V C
E[V
]
Col
lect
or –
Em
itter
Vol
tage
, V C
E[V
]
Gate – Emitter Voltage, VGE [V]
Frequency [KHz]
Load
C
urre
nt [
A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltagecharacteristics
Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
200A
IC=100A
150A
Common EmitterTC=25℃
VGE = 8V
10V12V
15V
20V 20V
15V
Common EmitterTC=125℃
10V
12V
VGE=8V
TC=125℃TC=25℃
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Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G150SH12A
0
50
100
150
200
250
300
0 1 2 3 4
0
200
400
600
800
1000
1200
1400
0 20 40 60 80 100 120 140 160
0
4
8
12
16
20
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160
Collector – Emitter Voltage, VCE [V]
Cap
acita
nce
[nF]
Gate Charge, Qg [nC]G
ate
–E
mitt
er V
olta
ge,
V GE
[V]
Rectangular Pulse Duration Time [sec]
Ther
mal
Res
pons
e Zt
hjc
[ /W
]
℃
Forward Drop Voltage, VF [V]
Forw
ard
Cur
rent
, I F
[A]
Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics
Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics
Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation vs. Case Temperature
TJ ≤ 150℃PD = f(Tc)
0.1
1
10
100
0 20 40 60 80 100
Common EmitterVGE=0V, f=1MHZTC=25℃
Cies
Coes
Cres
VCC=600V
0.001
0.01
0.1
1
1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00
IGBT : DIODE :TC=25℃
TC=125℃TC=25℃
Common EmitterVCE=600V, IC=150ATC=25℃
Col
lect
or C
urre
nt ,
Ic [
A ]
TJ ≤ 150℃VGE ≥15V
Pow
er D
issi
patio
n ,P
D[ W
]
Case Temperature, Tc [ ℃ ] Case Temperature, Tc [ ℃ ]
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May. 2009 DM2G150SH12A
Package Out Line Information 7DM-3
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