ANSYS CFD results for the AIAA High Lift Prediction Workshop
High Power Electronics Design - Ansys · High Power Electronics Design Scott Stanton Technical...
Transcript of High Power Electronics Design - Ansys · High Power Electronics Design Scott Stanton Technical...
© 2010 ANSYS, Inc. All rights reserved. 1 ANSYS, Inc. Proprietary© 2010 ANSYS, Inc. All rights reserved. 1 ANSYS, Inc. Proprietary
High Power Electronics Design
Scott StantonTechnical DirectorAdvanced Technology Initiatives
Mark ChristiniLead Application Engineer
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Objectives
• ANSYS Multiphysics Inverter Design Flow– High-Power System Design Concept
• IGBT Electro-Thermal Model– Average– Dynamic
• IGBT Package Thermal Model– Extracted from CFD
– EMI/EMC Analysis• Parameter Extraction: R, L, C• Radiated Emissions – Full Wave Effects
– IGBT Package Mechanical Stress Analysis• Thermal Stress• Electromagnetic Forces
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IGBT Models in Simplorer
Maximum simulation speed:• Accurate static behavior
• Accurate thermal response
• No voltage and current transients
• Losses
• Suitable for system design (seconds)
Average IGBT Model Dynamic IGBT Model
Maximum simulation accuracy:• Sophisticated semiconductor based model
• Accurate static, dynamic and thermal behaviour
• Accurate gate voltage and current waveforms
• Losses
• Suitable for drive optimization, EMI/EMC (msec)
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IGBT Characterization
Extraction of the IGBT Electro-Thermal Parameters
Tran
sfer
char
acte
ristic
cu
rve f
rom
dat
ashe
etFi
tted
curv
e vs
. mea
sure
d da
ta
Measured Data
Fitted Curve
Extracted parameter values
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The Average IGBT Model
• Three main parts:1) static core – V,I transfer and output characteristics2) energy calculation section – on/off and DC power3) thermal network- with or w/o external thermal link
• Parameters extracted through characteristic curves
Electrical Network Thermal Network
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The Average IGBT Model
• Switching V and I waveforms are square• Switching losses are calculated at each switching period• Turn-ON/OFF power pulses are injected into thermal network• Amplitude of the rectangular power pulses are calculated
• PON/POFF – Switching Power • EON/EOFF – Energy losses • PDC – Conduction power dissipation; • TON/TOFF – Power injection pulse durations• Vce,sat – Saturation collector-emitter voltage
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The Dynamic IGBT Model
• Dynamic IGBT shares the same static core as Average model• The switching energy (Eswitch) of the Dynamic IGBT model is
the direct integration of the switching voltage and current• This is the fundamental advantage over the average model
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The Dynamic IGBT Model
• Dynamic IGBT accurately captures the switching waveforms• Suitable for EMI/EMC analysis
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IGBT PackageThermal Model: Technical Background
• Temperature rise at any point in the system is the sum of the independently derived temperature increase attributable to each heat source in the system (superposition)
• Assumptions:– Temperature assumed to be a linear function of heat sources– This requires that the fluid flow is constant (for each study) and density
and all properties are constants
ANSYS Icepack
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IGBT Thermal Model
⎥⎥⎥⎥
⎦
⎤
⎢⎢⎢⎢
⎣
⎡
⎥⎥⎥⎥
⎦
⎤
⎢⎢⎢⎢
⎣
⎡
=
⎥⎥⎥⎥
⎦
⎤
⎢⎢⎢⎢
⎣
⎡
Δ
ΔΔ
)(...
)()(
)()()(
)()()()()()(
)(
)()(
2
1
21
22221
11211
2
1
th
thth
ttt
tttttt
tT
tTtT
nnnnn
n
n
n θϕϕ
ϕθϕϕϕθ
L
MOMM
L
L
M
Foster network
Each matrix element is a complete thermal transient response curve
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Implementation
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Implementation
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Implementation
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Implementation
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Implementation
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IGBT Thermal Model Validation
• Simple 4-node system• Air at a constant speed of 1 m/s
1
2
3
4
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Node 1 – self-heating Node 1 – Due to Source 3
Node 1 – Due to Source 2 Node 1 – Due to Source 4
tem
p
time
tem
p
time
tem
p
time
tem
p
time
IGBT Thermal Model Results
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IGBT Thermal Model Validation
Temperature at Node 1 with constant heat flux applied at all 4 nodes
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IGBT Thermal Model Validation
Temperature at Node 1 with time-variant heat flux
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IGBT Inverter System
Line Current ProfileTemperature Profile
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EMI/EMC: L,R,C Extraction
• Extract the resistance, inductance, capacitance and conductance (R,L,C) parameters of the entire package
Low Frequency High Frequency
Frequency can have a significant impact on the design performance
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• Extracting parameters is straightforward as the nets are automatically assigned
EMI/EMC: L, R, C Extraction
Negative BarPositive Bar
Phase A
Phase B
Phase C
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EMI/EMC: Mesh and Field Result
The structure is meshed using automatic and adaptive meshing
Current Distribution
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EMI/EMC: Methodology
• The simulation outputs consist of the RLC matrices for different frequencies
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Circuit Design based on Parametrized IGBT and Frequency Dependent Model
System Integration
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ω+ω
+
ICA:
+Φ
+ΦGAINGAIN
CONSTCONST
CONSTCONST
EQUBLEQUBL
EQUBLEQUBL
EQUBLEQUBL
ANGRAD
57.3
-60+PWM_PER
-30+PWM_PER
EQUBLEQUBL
CONSTCONST -90+PWM_PER
EQUBLEQUBL
CONSTCONST -120+PWM_PER
EQUBLEQUBL
CONSTCONST -150+PWM_PER
FEA
sourceA1
sourceA2
sourceB1
sourceB2
sourceC1
sourceC2
Magnet01
Magnet02
ECE - LINKECE - LINKECE - LINKECE - LINK
ECELink1
W
+W
+
-22.50
60.00
0
25.00
50.00
0 240.00m100.00m
2DGraphSel1 NIGBT71.IC
Extract Power Loss
0
474.00m
200.00m
400.00m
100.00 1.00Meg1.00k 3.00k 10.00k 100.00k
2DGraphCon1
GS_I...FFT
EA
E
EC
AA
IA
AA
IB
AA
IC
EQUEQU
Ix := Ixa +
Ixa :=
Iyb := IB.I *
Iy := Iya + I
Ixc := IC.I *
Im := sqrt(Ix^2 +
Iya :
Iyc := IC.I *
delta := ata
Ixb := IB.I *
DD
DD
DD
System Integration
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0
474.00m
200.00m
400.00m
100.00 1.00Meg1.00k 3.00k 10.00k 100.00k
2DGraphCon1
GS_I...
Freq. res.
Normalized S para.MagE@10m byspecified inputs
Multiplied magE plotsby Simplorer
Emission Test
Full Wave Effect
Ansoft HFSS
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Emitted Fields
• The E field is very localized close to the module even at 100 MHz
• However, the very high power can lead to large values of E field even far from the module
• This design is fine at 110MHz.
mag E @ 100 MHz, Power = 10 000W
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IGBT Thermal and Structural Analysis
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Motivation and Methodology
• The high currents that flow through IGBT’s make them susceptible to failure due to the large stresses– Lorentz forces– Switching losses– Conduction losses
Electrical Circuit(Simplorer)
Switching Losses
Electromagnetics(Maxwell 3D)
Conduction Losses+
Lorentz Forces
Thermal stresses
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Workflow
Simplorer V9Solve IGBT
Circuit
Terminal Current
Maxwell V14Solve for
Magnetostatics
Switching LossesANSYS Thermal
Solve Temperature
TemperatureDistribution
ANSYS MechanicalSolve
Static Structural
Stress and Deformation
ANSYS Workbench R13
Lorentz Forces
Ohmic Losses
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Step 1
Simplorer V9Solve IGBT
Circuit
Terminal Current
Maxwell V14Solve for
Magnetostatics
Switching LossesANSYS Thermal
Solve Temperature
TemperatureDistribution
ANSYS MechanicalSolve
Static Structural
Stress and Deformation
Lorentz Forces
Ohmic Losses
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Create Simplorer Solution
• Launch ANSYS Workbench R13
• Drag and Drop a Simplorer Analysis System onto the project page
• Right click on Setup and select Edit to launch Simplorer V9
Simplorer V9
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IGBT Circuit
• Input Pulse• IGBT Unit• Ammeter (Gives Terminal Current through IGBT)• Multiplier (Gives Switching Losses across IGBT)
Simplorer V9
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Step 2
Simplorer V9Solve IGBT
Circuit
Terminal Current
Maxwell V14Solve for
Magnetostatics
Switching LossesANSYS Thermal
Solve Temperature
TemperatureDistribution
ANSYS MechanicalSolve
Static Structural
Stress and Deformation
Lorentz Forces
Ohmic Losses
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Create Maxwell System
• Select a Maxwell Analysis System
• Drag and drop it on Project Schematic page as a Standalone system
• Right click on “Geometry” tab and select Edit to Launch Maxwell
Maxwell V14
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Complete IGBT Module
The Current through one phase is shared equally between two IGBT’s
Negative Terminal
Diodes (12 In total)
Phase A Phase B Phase C
One Leg
Positive Terminal
IGBTs (12 in total)
Maxwell V14
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Material Definition
• Import the IGBT model• Set Solution type to
“Magnetostatic”• Set material properties of all
the objects• Diodes and IGBT units
which are OFF mode are applied with Vacuum material
Maxwell V14
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Set Current Excitations
• Maximum current through IGBT was calculated by Simplorer which will be set as terminal current
• Set Current excitations of 20A to positive terminals
• Set Current excitation of 40A as Phase current – The value is set as
twice the terminal current
Maxwell V14
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Solve
• Add solution Setup and solve the case with proper settings
• Plot J field to check the results• Close Maxwell and return to Project Page
Maxwell V14
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Step 3
Simplorer V9Solve IGBT
Circuit
Terminal Current
Maxwell V14Solve for
Magnetostatics
Switching LossesANSYS Thermal
Solve Temperature
TemperatureDistribution
ANSYS MechanicalSolve
Static Structural
Stress and Deformation
Lorentz Forces
Ohmic Losses
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Create Steady State Thermal System
• Select Steady State Thermal Analysis system
• Drag and drop it on Solution tab of Maxwell 3D
• This will enable transfer of Ohmic losses calculated in Maxwell to ANSYS Mechanical
Steady State Thermal
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Creating Material Data
• Right click on Engineering Data and select Edit to access Material database
• Add needed required material from database to the project and return to project page
• Double click on “Model” tab to launch ANSYS Mechanical
Steady State Thermal
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Steady State Thermal Setup
• Specify appropriate materials to all objects
• Apply mesh sizes on required objects and Generate Mesh
• Maxwell link
Steady State Thermal
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Setup (Contd…)
• Right Click on “Imported Load (Maxwell3DSolution) tab and select “Insert Heat Generation”
• Under “Geometry”, select all the volumes from the geometry and select “Import Load”
• Conduction losses will be mapped from Maxwell to ANSYS Mechanical
Steady State Thermal
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Setup (Contd…)
• In addition to conduction losses, we also need to apply switching losses of 49.5 W, which was calculated in Simplorer.
• We need to divide the switching losses by the volume of all bodies which carry current since the losses will be shared among them
• The resulting value is around 0.01683 W/mm3
• We will apply this value through command line.
• This value will add to the conduction losses already applied.
Steady State Thermal
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Temperature DistributionSteady State Thermal
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Step 4
Simplorer V9Solve IGBT
Circuit
Terminal Current
Maxwell V14Solve for
Magnetostatics
Switching LossesANSYS Thermal
Solve Temperature
TemperatureDistribution
ANSYS MechanicalSolve
Static Structural
Stress and Deformation
Lorentz Forces
Ohmic Losses
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Create Static Structural System
• Select Static Structural system, Drag and drop it on the “Solution” tab of Steady State Thermal System
• Select “Solution” tab of Maxwell 3D system, drag and drop it on “Setup” tab of Static Structural
• Right click on “Setup” and select “Edit” to launch ANSYS Mechanical
Static Structural
Mapping Electromagnetic ForceThermal Loading
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Setup
• Right Click on “Imported Load (Maxwell3DSolution) tab and select “Insert Body Force Density”
• Under “Geometry”, select Bondwires to which we want to apply Lorentz Forces
• The forces calculated by Maxwell will be applied to the Bondwires
Static Structural
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Results
Equivalent StressMax Value: 120 MPa
DeformationMax Value: 0.044 mm
Static Structural
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Summary
• ANSYS Workbench is used to simulate multiphysics problem of IGBT accurately taking into account:– Electric Circuits– Electromagnetics– Thermal– Stress
• On the Workbench platform, Simplorer, Maxwell3D and ANSYS Mechanical were used for various simulations and data transfer
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Conclusion
• ANSYS Integrated Simulation Environment Allows Engineers to Analyze:– Average and Dynamic IGBT Models– Conducted Emissions: L,R,C Extraction– Thermal Effects: Network Model– Radiated Emissions– Thermal and Electromagnetic StressANSYS technology provides the most comprehensive state-of-the-art high power inverter solutions in the industry.