HEMT (High Electron Mobility Transistor) - Patent and Technology Report - Key Players, Innovators...
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description
A Dolcera Report production about High Electron Mobility Transistor (HEMT), major players and technological developments. The report focuses on technology, industry and patent landscape of the concerned topic.The Dolcera center of excellence finds about growth of a technology; competition- key players, innovators; gaps and opportunities in the technology and industry with the analyses of patents and trends as the core.This presentation is a brief introduction to the detailed Dolcera Report on High Electron Mobility Transistor (HEMT).For more details and complete report contact [email protected]
Transcript of HEMT (High Electron Mobility Transistor) - Patent and Technology Report - Key Players, Innovators...
High Electron Mobility Transistor
(HEMT)
Knowledge Services
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Samir Raiyani
Email: [email protected]: +1-650-425-6772
Fax: +1-866-690-7517
High Electron Mobility Transistor (HEMT)
Introduction
• High Electron Mobility Transistor (ref: HEMT) is an innovative transistor structure which uses potential well as a channel for electron conduction.
• In the conventional Si transistors the cut off frequency is limited by the scattering of electrons in the channel. E.g.: Ionized scattering, Lattice scattering..Etc
• HEMT has a Hetero interface which is created at the contacting interface of two suitable elements or compounds. The property of hetero interface is, it creates a potential well near the interface where the electrons are confined .
• The potential well separates the electrons from its donors such that ionized scattering is reduced. The potential well has very low effective mass values which helps the electrons to attain higher speeds in the channel.
• Mainly HEMT’s are being made with III-V compounds because of good lattice matching and low effective masses offered by III-V group compounds.
• The scaling and performance driven electron industry started looking for the alternatives because of the limitation of the conventional silicon transistors. So researchers have started looking HEMT as an alternative which already well settled in high frequency applications.
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HEMT Taxonomy
• Concept based taxonomy of HEMT is presented below
To see the detailed taxonomy write to us at: [email protected]
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Classification
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• Different classes related to variable valve timing are identified• These Classes are used in the search strategy
To see the detailed classifications write to us at: [email protected]
High Electron Mobility Transistor (HEMT)
Control Patents
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• Highly relevant patents are used for extracting keywords and ensuring the quality of the search query
To see the detailed table write to us at: [email protected]
High Electron Mobility Transistor (HEMT)
Search Concepts
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• Concepts used to search patent literature
To see the detailed table write to us at: [email protected]
High Electron Mobility Transistor (HEMT)
Search Query
Database: THOMSON INOVATIONTimeline: 01/01/1862 to 22/08/2011
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To see the detailed table write to us at: [email protected]
High Electron Mobility Transistor (HEMT)
Class based Interactive Taxonomy
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A detailed class based taxonomy is also prepared and is furnished below.
To see the detailed taxonomy write to us at: [email protected]
High Electron Mobility Transistor (HEMT)
Insights: Major Players
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• Fujitsu, Hitachi, Sumitomo electric and Toshiba has more than 200 patents on HEMT.
High Electron Mobility Transistor (HEMT)
Insights: Key Patents
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• The top 10 cited patents are listed below
High Electron Mobility Transistor (HEMT)
Insights: Year wise IP activity
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• Number of publications for year raised with the revolution in the communication field.
High Electron Mobility Transistor (HEMT)
Insights: Geographical Distribution
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• Surprisingly Japan took second place after US which usually would be Europe
High Electron Mobility Transistor (HEMT)
Insight: Others
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• Average citation rate for HEMT technology is found to be 4.28
• Though Fujitsu has 297 patents but its citation frequency is less than NEC citation
frequency which only has 149 patents. So NEC must be having more key patents in
HEMT
• Similarly we have observed that MQW(Multiple Quantum well) and T-Shaped gate
formation has highest citation frequency which indicates the research interest in
these two technology areas
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Like this presentation?
Buy the customized report from DolceraPatent Analytics Services Market Research Services Purchase Patent Dashboard
Patent Landscape Services Dolcera Processes Industry Focus Patent Search Services Patent Alerting Services Dolcera Tools
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This is only a sample report with brief analysis. Purchase the complete report here. Price: $999
Dolcera can provide a comprehensive report customized to your needs
Samir Raiyani
Email: [email protected]: +1-650-425-6772
Fax: +1-866-690-7517
High Electron Mobility Transistor (HEMT)
![New High Electron Mobility Transistor: A Review on Analytical Models · 2016. 10. 21. · important analytical model of the HEMT was developed by Delagebeaudeuf and Linh in 1982 [10].](https://static.fdocuments.us/doc/165x107/606786efe4de7b1c983f9d5d/new-high-electron-mobility-transistor-a-review-on-analytical-2016-10-21-important.jpg)
