GaN SBD Rectenna Circuit with Higher-Harmonics Rejection ...wpt/paper/WPT2012-53.pdf¼ Û ¨>&VNA>'...
6
♫ᅋἲே 㟁Ꮚሗ㏻ಙᏛ ಙᏛᢏሗ THE INSTITUTE OF ELECTRONICS, TECHNICAL REPORT OF IEICE INFORMATION AND COMMUNICATION ENGINEERS WPT2012-53 (2012-03) This article is a technical report without peer review, and its polished and/or extended version may be published elsewhere. 㧗ㄪἼ㐽ࢱ⏝ ࡓ࠸GaN SBD ࢼࢸࢡᅇ㊰ ᯘ㔝 ⪔ᖹ ⡿ಖዉ⨾ ⚟ᒃே ᒾᓮ ⿱ ᩊ 㔠ᖹ 㔝 Ὀኵ ᚨᓥᏛࢩࢯࢡࢸࢧ✲◊ࢫ㒊 770-8506 ᚨᓥᕷ༡ᖖᓥ⏫ 2-1 E-mail: [email protected] ࠶ ࡋࢼࢸࢡᅇ㊰࠸࠾ ࠊ㧗ㄪἼ㐽ࢱ⏝࠸ᑕἼᇶᮏἼࡢࡍࡇࢲ ࢫࡀ⡆༢࡞ࠊᑕᢚไࡍࡇࡀ⬟ࠋࡓࡗ࡞ᅇ㊰ࢩࢩࠊࡤ㧗ㄪἼ㐽ࢱ ㏻ࡇࡍࢼࢸࢡᅇ㊰ ࡣSBD ᥋ᐜ㔞㈇Ⲵᢠࡢ୪᥋㏆⥺࠸ᙧ≉ᛶ࡞ࡢࡑࠋ≉ᛶࡣධຊ㟁ຊࡢኚ ᑐࡋࡃࡁኚࠊࡎసᴗࡀᏳᐃ࡞ࡇ࡞࠺ࠋ࠸↓ࡣࠊࡓ㧗࿘Ἴ㐽ࢱࡗ ࡁࡃኚ࡞ ࠋࡓࡗGaN SBD ⏝ ࡓ࠸2.45GHz ࡢࢼࢸࢡᅇ㊰ᑐࡋᑕᢚไ⾜௵ࠊ࠸ពࡢ㈇Ⲵᢠࡢᑕ ᢚไᐇド ࠋࡓࡋ ࢻࢼࢸࢡᅇ㊰ࠊ㧗ㄪἼ㐽ࠊࢱࢲࢫࠊGaN SBDࠊᑕᢚไ GaN SBD Rectenna Circuit with Higher-Harmonics Rejection Filter K. Hayashino, H. Kume, K. Fukui, Y. Iwasaki, J. -P. Ao and Y. Ohno Institute of Technology and Science, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan E-mail: [email protected] Abstract Inserting a higher-harmonics rejection filter in rectenna circuits, the reflected signal contains only the fundamental-mode. Then, the impedance matching becomes easy allowing the complete suppression of the reflection. Circuit simulation results indicated that the rectenna circuits look like the parallel connection of the junction capacitance of the SBD and load resistance. The parameters did not vary so largely that the matching operation is stable. Also, the filter characteristics did not largely affect the parameters. The technique is applied to GaN SBD rectenna circuits and confirmed that the reflection suppression at any load resistance values. Keyword Rectenna Circuit, Higher-Harmonics Rejection Filter, Impedance Matching, GaN SBD, Reflection Suppression 1. ࡌࡣ ↓⥺㟁ຊఏ㏦⏝ ࠸ ࢼࢸࢡᅇ㊰ ࢲࠊࡣ ࢻ㒊 ࡢᑕ ࡢࡑࡣ ࢼࢸ✵㛫 ᨺᑕ ࡉ ࡓ༢⣧ᦆኻ ࡞ ࢲࠋ ࡢࢻ㠀⥺ ᙧᛶᑕἼ ࡣᇶᮏἼ ࡢಸ ࡢ㧗ㄪἼ ࡓ ࠊ ࡇ ࡢἼ ࢲ ࢫ ࡋᑕ ࢮ ࡍ ࡇ ࡣᴟ㞴 ࠋ࠸ࡋ㈇Ⲵᢠฟຊ DC 㟁ᅽไᚚ ࡍ ࡇ ࠊᇶᮏἼ 㧗ㄪἼᡂศᑠ ࡍࡃࡉ ࡇ ࠶⛬ᗘ ࡢᑕᢚไ ࡣ⬟ ࠶ ࡋࠋ ࠊࡋᑕᢚไ ࡓࡋᅇ㊰ ࢲࠊࡀ ࢻ ࡗ㐺 ࡢ᮲௳ ࠊࡃ↓ࡣ⯡ ࡣᑕ ࡀᑠ ࡞㈇Ⲵ᮲௳ ࢲ ࢻᦆኻ ࡀᑠ ࡞㈇ Ⲵ᮲௳ ࡞␗ࡀ ⤖ࠊᯝ ࡋᅇ㊰ ⬟ࡢຊ ࡣᘬ ࡁฟ ࡏ ࠸࡞࠸[1] ࠋ ࡇࡑ ௵ࠊព ࡢ㈇Ⲵ᮲௳ᑕᢚไ ࡍ᪉ἲ ウ ࠋࡓࡋ࿘Ἴ ࢧࡢἼ ࡢሙ ࠊࡣL C ࡞ ࡢ ࢱࢡ ࢫ⏝ ࠸ᦆኻ↓ ࡃᑕᢚไ ࡍ ࡇ ࠊࡣ ࢲ ࢫ ࡋ ▱ࡃ ࠸ ࡇࡑࠋ ࠊ ࢼࢸࢡᅇ㊰㧗ㄪἼ㐽 ࢱタ ࡅᑕἼ ᇶᮏἼ ࡢ ࡍ ࡇヨ ࡢࡇࠋࡓ≧ែ ࡀᅇ㊰ⓗ Ᏻᐃ ࡘ ࡞ࡁᦆኻⓎ⏕ ࡅ࡞ࡋ ࡤ༢࿘Ἴ ࡢ ࢲ ࢫᢏ⾡ ࡀ⏝⬟ ࡞ ࠋᮏㄽ ࠊࡣ ࢼࢸࢡᅇ㊰㧗ㄪἼ ࢱධ ࡓሙ ࡢᙳ㡪 ࡢࡑࠊᢏ⾡ GaN ࢩ ࢺ ࢲ ࢻ(SBD) ⏝ ࡓ࠸ ࢼࢸࢡᅇ㊰㐺⏝ ⤖ࡓࡋᯝሗ࿌ ࡍ ࠋ- 67-
Transcript of GaN SBD Rectenna Circuit with Higher-Harmonics Rejection ...wpt/paper/WPT2012-53.pdf¼ Û ¨>&VNA>'...
THE INSTITUTE OF ELECTRONICS, TECHNICAL REPORT OF IEICE INFORMATION
AND COMMUNICATION ENGINEERS WPT2012-53 (2012-03)
This article is a technical report without peer review, and its polished and/or extended version may be published elsewhere.
GaN SBD
E-mail: [email protected]
SBD
↓
GaN SBD 2.45GHz
GaN SBD
GaN SBD Rectenna Circuit with Higher-Harmonics Rejection Filter K. Hayashino, H. Kume, K. Fukui, Y. Iwasaki, J. -P. Ao and Y. Ohno
Institute of Technology and Science, The University of Tokushima,
2-1 Minami-Josanjima, Tokushima 770-8506, Japan
E-mail: [email protected]
Abstract Inserting a higher-harmonics rejection filter in rectenna circuits, the reflected signal contains only the fundamental-mode. Then, the impedance matching becomes easy allowing the complete suppression of the reflection. Circuit simulation results indicated that the rectenna circuits look like the parallel connection of the junction capacitance of the SBD and load resistance. The parameters did not vary so largely that the matching operation is stable. Also, the filter characteristics did not largely affect the parameters. The technique is applied to GaN SBD rectenna circuits and confirmed that the reflection suppression at any load resistance values.
Keyword Rectenna Circuit, Higher-Harmonics Rejection Filter, Impedance Matching, GaN SBD, Reflection Suppression
.1 ↓
DC
[1]
L C
↓
GaN
(SBD)
Z=0 Z= /4
Z=0
DC
DC
Microwave Office(MWO)
) A)
) B)
LPF 2
S
S A)
B) S MWO
S
SBD P P
GaN SBD (IS=3e-13mA, RS=7.2 , CJ0=0.19pF, VJ=1V, N=1.5, M=0.28 )[2]
(1mF)
2.45GHz 1W
1~16 a
Cj0 1/2
4(b)↓
10W 0.1W
C-V
S
5
1W
[3]
↓
RLOADC
-68-
1.27mm
AD1000 10.6= tan=0.0023@10GHz
DC 100pF
GRM1882-C2A-101JA01D) /4
5
A
7
2m×100m
RON=0.675VF=1.17V1MHz
C j0=3.96pF
1 16
.4 8
Agilent E8364B
VNA VNA Port 1 (40dB, Mini-Circuits ZHL-16W-43-S+)
-1
0
1
(a)
RLOAD nCj0/2
40
60
80
100
-
DC (DIODE) (f=2.45GHz)
-69-
% -20dB
1%
VNA Port 2 VNA
S21 S11
VNA
/4
/4
VNA DC
Agilent U2722
2
.5 9
2 -20dB
3 -10dB4 -15dB
10
S11 11 P IN PREF
DC PDC DIODE
REFRF/DC TOTAL
10
60 1.4 11
S
150
11
11
REFRF/DC TOTAL 12
13
20↓
(1)
(2)
7 GaN SBD ( ( 8 (2m×100m)
Substrate
n-GaN
-50
-40
-30
-20
-10
0
,60 ,80
RF/DC
RF/DC 56.6%
0.25W
1.17V
5V
DC 35V
0.25W
0%
20%
40%
60%
80%
12 REF RF/DC TOTAL
20150
/4
-0.1
-0.05
0
0.05
0.1
SRE
GaN SBD
20150
↓
Insulating Plate Using Open-Ring Resonator Coupling and GaN Schottky Diode, ” IMWS-IWPT 2011, May 12-13, 2011 – Uji (Kyoto), Japan, IWPT2-2 (2011)
[2] K. Fukui, Taro Takeuchi, K. Hayashino, K.Harauchi,
Y. Iwasaki, J-P Ao, and Y. Ohno, "T-shaped Anode GaN Schottky Barrier Diode for Microwave Power Rectification," IMWS-IWPT 2012, FRI-F-23, Kyoto, Japan (2012)
[3] K. Hayashino, K.Harauchi, Y. Iwasaki, K. Fukui, J-P
Ao, and Y. Ohno, "Analysis of Loss Mechanism in Rectenna Circuit with GaN Schottky Barrier Diode," IMWS-IWPT 2012, FRI-E-2, Kyoto, Japan (2012)
0%
20%
40%
60%
80%
14 RF/DC TOTAL
-72-
This article is a technical report without peer review, and its polished and/or extended version may be published elsewhere.
GaN SBD
E-mail: [email protected]
SBD
↓
GaN SBD 2.45GHz
GaN SBD
GaN SBD Rectenna Circuit with Higher-Harmonics Rejection Filter K. Hayashino, H. Kume, K. Fukui, Y. Iwasaki, J. -P. Ao and Y. Ohno
Institute of Technology and Science, The University of Tokushima,
2-1 Minami-Josanjima, Tokushima 770-8506, Japan
E-mail: [email protected]
Abstract Inserting a higher-harmonics rejection filter in rectenna circuits, the reflected signal contains only the fundamental-mode. Then, the impedance matching becomes easy allowing the complete suppression of the reflection. Circuit simulation results indicated that the rectenna circuits look like the parallel connection of the junction capacitance of the SBD and load resistance. The parameters did not vary so largely that the matching operation is stable. Also, the filter characteristics did not largely affect the parameters. The technique is applied to GaN SBD rectenna circuits and confirmed that the reflection suppression at any load resistance values.
Keyword Rectenna Circuit, Higher-Harmonics Rejection Filter, Impedance Matching, GaN SBD, Reflection Suppression
.1 ↓
DC
[1]
L C
↓
GaN
(SBD)
Z=0 Z= /4
Z=0
DC
DC
Microwave Office(MWO)
) A)
) B)
LPF 2
S
S A)
B) S MWO
S
SBD P P
GaN SBD (IS=3e-13mA, RS=7.2 , CJ0=0.19pF, VJ=1V, N=1.5, M=0.28 )[2]
(1mF)
2.45GHz 1W
1~16 a
Cj0 1/2
4(b)↓
10W 0.1W
C-V
S
5
1W
[3]
↓
RLOADC
-68-
1.27mm
AD1000 10.6= tan=0.0023@10GHz
DC 100pF
GRM1882-C2A-101JA01D) /4
5
A
7
2m×100m
RON=0.675VF=1.17V1MHz
C j0=3.96pF
1 16
.4 8
Agilent E8364B
VNA VNA Port 1 (40dB, Mini-Circuits ZHL-16W-43-S+)
-1
0
1
(a)
RLOAD nCj0/2
40
60
80
100
-
DC (DIODE) (f=2.45GHz)
-69-
% -20dB
1%
VNA Port 2 VNA
S21 S11
VNA
/4
/4
VNA DC
Agilent U2722
2
.5 9
2 -20dB
3 -10dB4 -15dB
10
S11 11 P IN PREF
DC PDC DIODE
REFRF/DC TOTAL
10
60 1.4 11
S
150
11
11
REFRF/DC TOTAL 12
13
20↓
(1)
(2)
7 GaN SBD ( ( 8 (2m×100m)
Substrate
n-GaN
-50
-40
-30
-20
-10
0
,60 ,80
RF/DC
RF/DC 56.6%
0.25W
1.17V
5V
DC 35V
0.25W
0%
20%
40%
60%
80%
12 REF RF/DC TOTAL
20150
/4
-0.1
-0.05
0
0.05
0.1
SRE
GaN SBD
20150
↓
Insulating Plate Using Open-Ring Resonator Coupling and GaN Schottky Diode, ” IMWS-IWPT 2011, May 12-13, 2011 – Uji (Kyoto), Japan, IWPT2-2 (2011)
[2] K. Fukui, Taro Takeuchi, K. Hayashino, K.Harauchi,
Y. Iwasaki, J-P Ao, and Y. Ohno, "T-shaped Anode GaN Schottky Barrier Diode for Microwave Power Rectification," IMWS-IWPT 2012, FRI-F-23, Kyoto, Japan (2012)
[3] K. Hayashino, K.Harauchi, Y. Iwasaki, K. Fukui, J-P
Ao, and Y. Ohno, "Analysis of Loss Mechanism in Rectenna Circuit with GaN Schottky Barrier Diode," IMWS-IWPT 2012, FRI-E-2, Kyoto, Japan (2012)
0%
20%
40%
60%
80%
14 RF/DC TOTAL
-72-