GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving,...
Transcript of GaN Power Device’s Merits - Fujitsu Global I DS[A] 20 20 R ... To achieve the energy saving,...
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
High-Efficiency GaN HEMT Power DeviceTo achieve the energy saving, downsizing for all power electronics
Marketing DepartmentPower Device Division
Fujitsu Semiconductor Limited
DownsizingEnergy Saving
GaN’s Merit
GaN Power Device’s Merits
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Large Die SizeSi
GaN
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Inductor Capacitor
Current Status:The capacitor andthe inductor islarge!!
More CompactEquipment Size
Much Lower Power Consumption
A smaller die size(lower resistance)even for the high
breakdown voltage
GaN’s Merit
Higher switching frequency⇒It is possible to reduce the size of
Capacitor and Inductor
Current Status:The device’s size islarge because of thehigh breakdown voltage
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The Possible Application Fieldof GaN Power Devices
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GaN Power Device can be applied in all areas of Automotive, Industrial and Consumer.
FSL’s GaN Power Device
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Parameters 30V 150V 600V
Drain Current [A] 12 20 20
Threshold voltage [V] 1.8 1.8 1.8
On Resistance [mΩ] 12.5 13 92
Gate Charge [nC] 4 16 12
Package (sample) WLCSP WLCSP TO247
All products’ sample is available
GaN Power Device’sDevelopment and Mass Production
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Fujitsu Semiconductor’sAizuwakamatsu PlantDesign・Evaluation・
Mass Production
Fujitsu LabsResearch and Development
2.5kW Power Supply for ICT System
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80-230VAC
Inductor Output diode
Capacitor
GaN-HEMTSynchronous Rectifier
380V
DC
2.5kW Power Supply for ICT SystemGaN-HEMT vs. Si-MOSFET
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GaNHEMT
MOSFET
IDS[A]
20 31
Ron[mΩ]
80 160# of
device 1 2
Higher efficiency than Si FET was confirmed
Input: 230VAC, output : 380V, Switching Frequency: 75KHz
GaN
MOS
GaN
MOS
効率
損失
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High Frequency PFC Evaluation Board
Compact size due to the higher switching frequency
High Frequency PFC Evaluation BoardGaN-HEMT vs. Si-MOSFET (HV)
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GaNHEMT
SiFET
IDS[A] 20 20
Ron[mΩ] 100 190
GaN power device showed higher efficiency potential at high switching frequency.
DC characteristics
AC characteristics
New Lineup 150V GaN Power Device
Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED
Item Unit ValueBreakdown Voltage V 150Threshold Voltage V 1.8On - Resistance mΩ 13
Item Unit Value
Input Capacitance(Ciss) pF 950Output capacitance (Coss) pF 550Reverse transfercapacitance (Crss) pF 80
Gate charge capacity (Qg) nC 16
Compare with Si MOSFET,GaN HEMT’s FOM
is less half
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