GaN ICs Enabling Next-Gen ACF for Adapter/Charger Application GaN...Mu One 45W Apple 30W 3 Mu One...
Transcript of GaN ICs Enabling Next-Gen ACF for Adapter/Charger Application GaN...Mu One 45W Apple 30W 3 Mu One...
GaN ICs Enabling Next-Gen ACF for Adapter/Charger Application
Xiucheng Huang, Ph.DMar 21st 2019
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USB Type C & Power Delivery
All in one: Type C connector One for all: PD adapter/charger
Mu One 45W Apple 30W
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Mu One 45W PD: World Thinnest Adapter
• 5V/3A, 9V/3A, 12V/3A, 15V/3A, 20V/2.25A
• 14 mm profile
• CE, UL, etc.
• Available now on www.amazon.comImages courtesy Made-in-Mind
• Available now on www.amazon.com4
RAVPower 45W: Same Platform
Images courtesy RAVPower
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AUKEY 24W, 27W, 30W
27W USB-C PD2 x 12W USB-A
30W USB-C PD
Images courtesy AUKEY
27W USB-C PD
• Available now on www.amazon.com
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How Can We Make It?
A. Select the right semiconductor devices
B. Select the right topology, frequency and control
C. Select the right magnetics and design properly
S1
Lm
Lr
S2
Cr
VinVO
CO
SR
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World First GaN Power IC
10…30V
Single GaN IC
• Monolithic integration, 650V•GaN FET +GaN Driver + GaN Logic
Half-bridge GaN IC
• Monolithic integration, 650V•2x GaN FETs
•2x GaN drivers
•GaN Logic (level-shift, bootstrap, shoot-through)
Clean HF waveform
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Active Clamp Flyback with Soft-Switching
S1Vsw
iLm
iDiLr
S2
Cr
VIN
n:1
iLr
Vsw
id
iLm
iLr
VSW
S1
iLm
id
iLr
Vsw
id
iLm
Commercial IC Available !!
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GaN vs. Si in ACF2%-3% Higher Efficiency with Low COSS, QG, Qrr , Eoff
Courtesy of Texas Instruments (ACF w/ pri resonance)
GaN: NV6260
iLr(RMS) = 0.9A
iLr (1 A/div) VSW (100 V/div)VSR (20 V/div)1 μs/div
iLr
-0.2A
Si: IPA60R299CP
iLr(RMS) = 1.1A
iLr
iLr (1 A/div) VSW (100 V/div)VSR (20 V/div)1 μs/div
-0.5A
Vbulk (V)
DC
/DC
Eff
icie
ncy
(%
)
600V Si + Partial ZVS
650V GaN+ Full ZVS tuning
3%2%
600V Si + Partial ZVS tuning
IPA60R299CP NV6260 (per FET)
Voltage Rating (V) 650 650
RDS(ON) 270 160
Co(tr) (pF) 120 50
Qg (nC) 22 2.5
Qrr (nC) 3900 0
40% ↓
60% ↓
90% ↓
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Advanced Magnetic Material
2.5
2.0
1.5
1.0
0.50.01 0.1 1 10 100
3.0
F3
/4=
Bf3
/4 (T
·Hz3
/4)
x103
ML91S(Hitachi Metal)
(Pv=500mW/cm3)
3C90(Ferroxcube)
3F35(Ferroxcube)
Mo
dif
ied
Pe
rfo
rman
ce f
acto
r
~1990s
~2000s
~2010s67
(Fair-Rite)~2015s
Fs(MHz)
Future
A. J. Hanson, J. A. Belk, S. Lim, C. R. Sullivan and D. J. Perreault, "Measurements and Performance Factor Comparisons of Magnetic Materials at High Frequency," in IEEE Transactions on
Power Electronics, vol. 31, no. 11, pp. 7909-7925, Nov. 2016.
Y. Han, G. Cheung, A. Li, C. R. Sullivan and D. J. Perreault, "Evaluation of Magnetic Materials for Very High Frequency Power Applications," in IEEE Transactions on Power
Electronics, vol. 27, no. 1, pp. 425-435, Jan. 2012.
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Magnetic: Bulky / Expensive Small / Cheap
Freq (kHz)
Vol (mm3)
100 200 300 1000
12000
6000
4000
2000
RM10
Chrome book(65kHz)
~ EQ25
Innergie(200kHz)
ER23
CPES(1MHz)
65kHz → 200kHz 2.5x size reduction
200kHz → 400kHz 1.5x size reduction
8000
10000
400kHz → 1MHz 1.5x size reduction
ER25
Navitas(400kHz)
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Planar MagneticsManufacturability
SR on sec winding, minimized Lk & Rac
Shielding integrated as pri winding
Safety rule compliance
Pri 2Sec 2
Sec 1
Pri 3-6Pri 1
Pri 7-10
Pri as shielding
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0.31”
Pri 1
Pri 2
Pri 3 ~ 10
Sec 1
Sec 2
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45 W in 11 mm = HF Planar ACF
AC Bridge
NV611x Power ICs ACF IC UCC28780
SR FET
PD IC
Type-CReceptacle
Planar Transformer
Bulk Caps
EMIFilter
Proprietary; Authorized Use with Navitas License
• Size : 29 cc (41 cc with case)
• Density : 1.7 W/cc (27 W/in3), 1.1 W/cc (18 W/in3) cased
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Cool Operation
AC Bridge 80°C
GaNFastPower IC 75°C, 80°C
SR IC 85°CSR FET 85°C
90 VAC, 45 W, 25 °C, uncased, no airflow,no thermal compound / heatsinking
Transformer 80°C
Top Bottom
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High Efficiency
0.8
0.82
0.84
0.86
0.88
0.9
0.92
0.94
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Effi
cie
ncy
Vo=5V Vo=9V Vo=15V Vo=20V
115VAC
230VAC
CoC Tier 2
4-Point Average Efficiency
0.86
0.88
0.9
0.92
0.94
0.96
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Eff
icie
ncy
Vo=5V
115Vac
Vo=9V Vo=15V
230Vac
90Vac
Vo=20V
Full Load Efficiency
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Quiet EMI (Conducted, Radiated)
CE: 115Vac 20V/2.25A CE: 230Vac 20V/2.25A
RE: 230Vac 20V/2.25AHorizontal
RE: 230Vac 20V/2.25AVertical
• Thanks to Matt Judkins, CEO of Made-in-Mind (Mu)
• Available via www.kickstarter.com now, and via www.amazon.com and airport stores in April
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Mu One: From Prototype to Mass Production
Images courtesy Made-in-Mind
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The New World of Fast Charging
Information available on www.navitassemi.com
Navitas Proprietary & Confidential 19