Gallium Arsenide Product Information · PDF file{111 } 130 ×10‑6 J cm‑2. ... +1 937...

Gallium ArsenideProduct Information

Freiberger Compound Materials GmbH

Welcome at Freiberger Compound Materials GmbH

About us

Freiberger is one of the world’s leading manufacturers of gallium arsenide (GaAs) compound semiconductor materials for the microelectronic and optoelectronic industries.

Freiberger has established an outstanding reputation as the first supplier to offer both VGF (Vertical Gradient Freeze) and LEC (Liquid Encapsulated Czochralski) material.

Freiberger is well known for its use of very efficient and highly automated techniques – from GaAs synthesis and mono‑crystal growth to wafer polishing and cleaning – to produce the highest quality epi‑ready wafers.

History

Freiberger derives its name from the place where it is located. Freiberg, a city in Germany, has a mining tradition going back over 800 years and is home to a university founded in the mid 1700s. The company’s business activities date back to 1957, and formed the very beginning of the semiconductor industry in the area. From these roots, a high‑tech industrial park has grown, where besides Freiberger’s GaAs, microelectronic and solar cell silicon is produced by other major companies.

In 1995, Federmann Enterprises, Ltd. acquired the company, and established Freiberger Compound Materials as a privately held company. After investments of over 100 million EUR, Freiberger currently operates a facility with 4,000 m² of clean room space, the most extensive analysis and evaluation laboratory in the industry, and with over 250 employees. GaAs wafers are supplied to major device manufacturers all over the world.

Quality

To achieve customer satisfaction we have implemented a quality and environmental management system that focuses on continuously improving our products and services. The system is an important monitoring tool, which aims at satisfying our customers‘ requirements and improving all business processes.All of our employees are focused on our quality and environmental objectives. Creativity, innovative spirit, quality and environmental consciousness ensure the regular renewal of the DIN EN ISO 9001 and 14001 certificates.

Well‑functioning organizational structures, streamlined information flow and efficient training programs secure skills and motivation for the team.This is ensuring all stakeholders‘ involvement in the further enhancement of the quality and environmental management system.

Quality — Proven by Measurement

Purity of raw materials and crystals Ion‑coupled plasma atomic emission spectrometry (ICP‑AES) Ion‑coupled plasma mass spectrometry (ICP‑MS) Atomic absorption spectrometry (AAS) Glow discharge mass spectroscopy (GDMS)

Crystalline perfection KOH etching, etch pit density (EPD) topography Rocking curve topography

Electrical parameters Contactless resistivity topography (COREMA, eddy current) Hall/van der Pauw measurement Contactless mobility measurement (μCOREMA)

EL2 concentration

IR absorption topography

Dopant distribution IR absorption topography Photoluminescence topography (PL)

Measured parameter Method

Mappings are for illustration purposes only.

Quality — Proven by Measurement

Carbon content F TIR localized vibrational mode spectroscopy

Wafer orientation X‑ray diffraction

Particles Light scattering topography (SURFSCAN)

Surface roughness White light interferometry Atomic force microscopy (AFM) Profilometry

Surface residual impurities Total reflection X‑ray fluorescence (TXRF) Time‑of‑flight secondary ion mass spectrometry (ToF‑SIMS)

Wafer flatness

Interferometry (ULTRASORT)

Wafer surface oxide condition

Ellipsometry (CANDELA)

Measured parameter Method

Mappings are for illustration purposes only.

Geometrical Flatness Parameters

Parameter Definition

Global parameters

TTV Difference between the maximum Total Thickness Variation and minimum values of the wafer thickness with the wafer clamped.

TIR Sum of the maximum positive Total Indicated Reading and negative deviations from the best fit plane with the wafer clamped.

Warp Sum of the maximum positive and negative deviations from the best fit plane with the wafer unclamped.

Bow Distance between the surface and the best fit plane at the center of an unclamped wafer.

Local parameters

LTV Difference between the maximum Local Thickness Variation and minimum values of the wafer thickness within a field of specified size with the wafer clamped.

LFPD Maximum distance between Local Focal Plane Deviation the surface and the best fit plane, either above or below, in a field of specified size with the wafer clamped.

TTV = |A| + |B|B

A Focal plane

Focal planeTIR = |A| + |B|

A

B

TTV = |A| + |B|B

A Focal plane

Focal planeTIR = |A| + |B|

A

B

Warp = |A| + |B|

B Focal planeA

Best fit plane

Center Point

Bow

Warp = |A| + |B|

B Focal planeA

Best fit plane

Center Point

Bow

Field size

Edgeexclusion

LTV = max (LTV1..n)

LFPD = max (LFPD1..n)

LTV1 LTV2 LTVn-1 LTVn

LFPD1 LFPD2 LFPDn-1 LFPDn

Field size

Edgeexclusion

Field size

Edgeexclusion

LTV = max (LTV1..n)

LFPD = max (LFPD1..n)

LTV1 LTV2 LTVn-1 LTVn

LFPD1 LFPD2 LFPDn-1 LFPDn

Field size

Edgeexclusion

Surface Orientation

Off-orientation by crystallographic directions

Standard off‑orientation Standard off‑orientationfor V‑groove (US) flat option for notch option

Off-orientation by tilt azimuth angle e

As a reference, a line is drawn from the center point of the wafer front surface to the center of the primary flat or the apex of the notch.The tilt azimuth angle, e, is the angle measured clock wise from the reference line to the direction of off‑orientation.

The tilt angle, f, is defined by moving the vector normal on the reference plane towards the wafer surface in the direction defined by the e angle.

Off‑orientationangle φ

Projection of waferfront side normal vectoron the (100) plane

[010] vector

OF

IF

Vector normalto the wafer front side

[100] vector normalto the (100) plane

Tilt axis

(100)

φ

Orthogonalmisorientation

φ


Orthogonalmisorientation

Projection of waferfront side normal vectoron the (100) plane

[010] vector

Vector normalto the wafer front side

[100] vector normalto the (100) plane

Tilt axis

(100)

Notch

Off-orientationangle φ

Tilt azimutangle ε

Vector normalto the wafer front surface

Vector normalto the reference plane

Tilt axis

Reference plane

ε

Notch

φ


Tilt azimutangle ε

Vector normalto the wafer front surface

Vector normalto the reference plane

Tilt axis

Reference plane

ε

OF

φ

Notch/Flat Position

‑[010]

(111)

‑(111)

‑(111)

‑‑(111)

‑[001]

‑[011]

[010]

[001]

‑[011]

[011]‑‑[011]

As facet

Ga facet ‑(110)

(110) ‑(101)

(101)

(100)

Notch

Front side (100)

V‑groove Dove tail

Notch

Notch option

Dove tail (Europe/Japan) flat option

(111)

- (111) - (111)

-- (111) - [001]

- [011]

[010] [001]

- [010]

- [011]

[011]

-- [011]

(100)

OF

As facet

Ga facet

IF

(101)

- (110) - (101)

(110)

IF (secondary) OF (primary)

Front side (100)


V-groove (US) flat option

‑[010]

(111)

‑ (111)

‑(111)

‑‑(111)

‑[001]

‑[011]

[010]

[001]

‑[011]

[011] ‑‑[011]

(100)

OF

As facet

Ga facet

IF

‑(110)

(110) ‑(101)

(101)

IF (secondary)OF (primary)

Front side (100)


Physical Parameters

Crystal structure Zinc blende

Lattice constant (300K) 5.654 Å

Atomic density (300K) 4.43 ×1022 cm‑3

Melting point 1238 °C

Density (300K) 5.315 g cm‑3

Linear thermal expansion coefficient (300K) 6.03 ×10‑6 K‑1

Thermal lattice conductivity (300K) 0.48 W cm‑1 K‑1

Specific heat (300K) 0.325 J g‑1 K‑1

Energy gap (300K) 1.42 eV

Electron mobility (300K) 8800 cm2 V‑1 s‑1

Hole mobility (300K) 450 cm2 V‑1 s‑1

Effective electron mass 0.068 m0

Intrinsic electron concentration 1.8 ×106 cm‑3

Intrinsic resistivity (300K) 3.8 ×108 Ω cm

Static electric constant (300K) 12.85

Optic electric constant (300K) 10.88

Elastic constants

C11 11.88 ×1010 Pa

C44 5.94 ×1010 Pa

C12 5.38 ×1010 Pa

Mohs hardness 4.5

Knoop hardness 7.35 ×109 Pa

Vickers hardness for (0.05 .. 1) N 6.52 ×109 Pa

Surface energy

{ 100 } 220 ×10‑6 J cm‑2

{ 110 } 150 ×10‑6 J cm‑2

{ 111 } 130 ×10‑6 J cm‑2

Freiberger Compound Materials GmbH

Am Junger-Löwe-Schacht 5 09599 Freiberg, Germany Telephone: +49 3731 280-0 Fax: +49 3731 280-106Email: [email protected]: www.freiberger.com

Headquarter Freiberger Compound Materials GmbHAm Junger-Löwe-Schacht 5 09599 Freiberg, GermanyTelephone: +49 3731 280-0Fax: +49 3731 280-106 Email: [email protected]

North America Freiberger Compound Materials USA, Inc. Dr. Russell E. Kremer7071 Corporate Way, Suite 203Dayton, OH 45459, USA Telephone: +1 937 291 2899 Fax: +1 937 291 2898MP: +1 937 602 6847Email: [email protected]

Nelson von EbbeTelephone: +1 415 640 4227Email: [email protected]

Western Europe except Germany, Austria and UKAzelis France SAS Dr. Elie Prudhommeaux 23 Rue des Ardennes 75940 Paris Cedex 19, France Telephone: +33 1447 310-72 Fax: +33 1447 310-53 Email: [email protected]

Japan Alcan International Network Masaru Sakamoto29 F, Shinjuku Mitsui Bldg., 2-1-1 Nishi Shinjuku, Shinjuku-ku, Tokyo 163-0429, Japan Telephone: +81 3334 967-02 Fax: +81 3334 967-78 Email: [email protected]

TaiwanLumi Innovation Tech. Corp.Joanne Huang11 F-4, No. 58, Sec. 3, Min chuan E. Rd.Taipei, Taiwan 104Telephone: +886 2 2517 7313Fax: +886 2 2517 0790MP: +886 938 552 957Email: [email protected]

Korea K1 Solution, Inc.Jin-Han JungRoom 1313, A-dong,Gwangmyeong SK Technopark, 1345,Soha-1dong, Gwangmyeong-si,Gyeonggi-do, 423-795, Korea.Telephone: +82 2838 286-6 Fax: +82 2600 828-67 Email: [email protected]

China Topco Scientific (Shanghai) Co., Ltd.Allen HungRm. 606, No. 333, Zhao Jia Bang RoadShanghai, ChinaTelephone: +86 21 6422 0458 ext. 288Fax: +86 21 6422 1912MP: +86 1872 154 0395Email: [email protected]

Parameter Unit Values Diameter mm 150.0 ± 0.1Crystal growth method VGF Resistivity *1 Ωcm (0.8 ... 8.0) × 108

Hall mobility cm2/ Vs (7.5 ... 4.0) × 103

Carbon content cm-3 (1.0 ... 10.0) × 1015

Etch pit density *2 avg. value on wafer cm-2 ≤ 10 000EL2 concentration avg. value on wafer cm-3 (1.0 ... 1.5) × 1016

(100)-orientation on ° ± 0.5 off towards (110) *3 ° 2.0 ± 0.5 Notch orientation [010] ± 2° angle ° 90 +5/-1 depth mm 1.00 +0.25/-0.00 Thickness *3 μm 675 ± 25Total thickness variation (TTV) μm ≤ 6Total indicated reading (TIR) μm ≤ 5Local focal plane deviation (LFPDmax) μm ≤ 1.5Local thickness variation (LTVmax) μm ≤ 1.8Measurement site size mm 20 × 20Warp μm ≤ 8 Particles diameter > 0.3 μm pcs. ≤ 100 Front side treatment polishedBack side treatment polished Laser marking acc. SEMI M 12 Packaging cassette *1 measured @ 22°C *2 measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2

number of sites 64525, edge exclusion 3 mm*3 other values upon request

Freiberger 150 mm SI VGF GaAs

Parameter Unit Values Diameter mm 150.0 ± 0.1Crystal growth method LEC Option A Resistivity *1 Ωcm (1.0 ... 6.0) × 107



Option B Resistivity *1 Ωcm (0.6 ... 4.0) × 108




(100)-orientation on ° ± 0.5 off towards (110) *3 ° 2.0 ± 0.5 Notch orientation [010] ± 2° angle ° 90 +5/-1 depth mm 1.00 +0.25/-0.00 Thickness *3 μm 675 ± 25Total thickness variation (TTV) μm ≤ 6Total indicated reading (TIR) μm ≤ 5Local focal plane deviation (LFPDmax) μm ≤ 1.5Local thickness variation (LTVmax) μm ≤ 1.8Measurement site size mm 20 × 20Warp μm ≤ 8 Particles diameter > 0.3 μm pcs. ≤ 100 Front side treatment polishedBack side treatment polished Laser marking acc. SEMI M 12 Packaging cassette *1 measured @ 22°C *2 measured according to DIN 50454-1: measurement at 9 sites *3 other values upon request

Freiberger 150 mm SI LEC GaAs

Parameter Unit Values Diameter mm 100.0 ± 0.1Crystal growth method VGF Resistivity *1 Ωcm (0.8 ... 8.0) × 108




(100)-orientation on ° ± 0.5 off towards (110) *3 ° 2.0 ± 0.5 Orientation (OF) flat length mm 32.5 ± 2.0 SEMI-US orientation [01-1] ± 1° SEMI-EJ orientation [0-1-1] ± 1°Identification (IF) flat length mm 18.0 ± 2.0 SEMI-US orientation [011] ± 5° SEMI-EJ orientation [0-11] ± 5° Thickness *3 μm 625 ± 25Total thickness variation (TTV) μm ≤ 5Total indicated reading (TIR) μm ≤ 4Local focal plane deviation (LFPDmax) μm ≤ 1.2Local thickness variation (LTVmax) μm ≤ 1.5Measurement site size mm 15 × 15Warp μm ≤ 7 Particles diameter > 0.3 μm pcs. ≤ 50 Front side treatment polishedBack side treatment polished Laser marking acc. SEMI T 5 Packaging standard cassette option single wafer container

*1 measured @ 22°C *2 measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2

number of sites 27352, edge exclusion 3 mm*3 other values upon request

Freiberger 100 mm SI VGF GaAs

Parameter Unit Values Diameter mm 100.0 ± 0.1Crystal growth method LEC Option A Resistivity *1 Ωcm (1.0 ... 6.0) × 107



Option B Resistivity *1 Ωcm (0.6 ... 4.0) × 108




(100)-orientation on ° ± 0.5 off towards (110) *3 ° 2.0 ± 0.5 Orientation (OF) flat length mm 32.5 ± 2.0 SEMI-US orientation [01-1] ± 1° SEMI-EJ orientation [0-1-1] ± 1°Identification (IF) flat length mm 18.0 ± 2.0 SEMI-US orientation [011] ± 5° SEMI-EJ orientation [0-11] ± 5° Thickness *3 μm 625 ± 25Total thickness variation (TTV) μm ≤ 5Total indicated reading (TIR) μm ≤ 4Local focal plane deviation (LFPDmax) μm ≤ 1.2Local thickness variation (LTVmax) μm ≤ 1.5Measurement site size mm 15 × 15Warp μm ≤ 7 Particles diameter > 0.3 μm pcs. ≤ 50 Front side treatment polishedBack side treatment polished Laser marking acc. SEMI T 5 Packaging standard cassette option single wafer container

*1 measured @ 22°C *2 measured according to DIN 50454-1: measurement at 9 sites *3 other values upon request

Freiberger 100 mm SI LEC GaAs

Parameter Unit Values Diameter mm 100.0 ± 0.1Crystal growth method VGFDopant SiConductivity type n LASER grade Carrier concentration *1 cm-3 (0.8 ... 3.0) × 1018

Hall mobility *2 cm2/ Vs (2.0 ... 1.5) × 103

LED grade Carrier concentration *1 cm-3 (0.2 ... 2.5) × 1018


Etch pit density *3 LASER grade A avg. value on wafer cm-2 ≤ 100 *4

LASER grade B avg. value on wafer cm-2 ≤ 250 *5

LASER grade C avg. value on wafer cm-2 ≤ 500 *6

LED grade avg. value on wafer cm-2 ≤ 3 000 (100)-orientation on ° ± 0.5 off towards (110) *7 ° 2.0 ± 0.5 Orientation (OF) flat length mm 32.5 ± 2.0 SEMI-US orientation [01-1] ± 1° SEMI-EJ orientation [0-1-1] ± 1°Identification (IF) flat length mm 18.0 ± 2.0 SEMI-US orientation [011] ± 5° SEMI-EJ orientation [0-11] ± 5° Thickness *7 μm 625 ± 25Total thickness variation (TTV) μm ≤ 15Total indicated reading (TIR) μm ≤ 10Warp μm ≤ 10 Particles diameter > 0.3 μm pcs. ≤ 80 Front side treatment polishedBack side treatment standard cut/etched option polished Laser marking acc. SEMI T 5 Packaging standard cassette option single wafer container

*1 other ranges upon request *2 depending on doping level or carrier concentration *3 measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2

number of sites 27352, edge exclusion 3 mm*4 corresponds to an EPD of 0 cm-2 on ≥ 85% of wafer area *5 corresponds to an EPD of ≤ 400 cm-2 on ≥ 90% of wafer area *6 corresponds to an EPD of ≤ 1200 cm-2 on ≥ 95% of wafer area *7 other values upon request

Freiberger 100 mm SC VGF GaAs Si doped

76.2 mm SC VGF GaAs Si doped

Parameter Unit Values Diameter mm 76.2 ± 0.1Crystal growth method VGFDopant SiConductivity type n LASER grade Carrier concentration *1 cm-3 (0.8 ... 3.0) × 1018


LED grade Carrier concentration *1 cm-3 (0.2 ... 2.5) × 1018


Etch pit density *3 LASER grade A avg. value on wafer cm-2 ≤ 100 *4

LASER grade B avg. value on wafer cm-2 ≤ 250 *5

LASER grade C avg. value on wafer cm-2 ≤ 500 *6

LED grade avg. value on wafer cm-2 ≤ 3 000 (100)-orientation on ° ± 0.5 off towards (110) *7 ° 2.0 ± 0.5 Orientation (OF) flat length mm 22.2 ± 1.5 SEMI-US orientation [01-1] ± 1° SEMI-EJ orientation [0-1-1] ± 1°Identification (IF) flat length mm 11.2 ± 1.5 SEMI-US orientation [011] ± 5° SEMI-EJ orientation [0-11] ± 5° Thickness *7 μm 450 ± 25Total thickness variation (TTV) μm ≤ 12Total indicated reading (TIR) μm ≤ 10Warp μm ≤ 15 Particles diameter > 0.3 μm pcs. ≤ 50 Front side treatment polishedBack side treatment standard cut/etched option polished Laser marking acc. SEMI T 5 Packaging standard cassette option single wafer container

*1 other ranges upon request *2 depending on doping level or carrier concentration *3 measured according to DIN 50454-1: whole wafer mapping, site size 500 x 500 μm2

number of sites 15196, edge exclusion 3 mm*4 corresponds to an EPD of 0 cm-2 on ≥ 85% of wafer area *5 corresponds to an EPD of ≤ 400 cm-2 on ≥ 90% of wafer area *6 corresponds to an EPD of ≤ 1200 cm-2 on ≥ 95% of wafer area *7 other values upon request

Freiberger

Parameter Unit Values Diameter mm 76.2 ± 0.1Crystal growth method LECDopant TeConductivity type n Carrier concentration *1 cm-3 (0.05 ... 2.5) × 1018


Etch pit density *3 avg. value on wafer cm-2 ≤ 70 000 (100)-orientation on ° ± 0.5 off towards (110) *4 ° 2.0 ± 0.5 Orientation (OF) flat length mm 22.2 ± 1.5 SEMI-US orientation [01-1] ± 1° SEMI-EJ orientation [0-1-1] ± 1°Identification (IF) flat length mm 11.2 ± 1.5 SEMI-US orientation [011] ± 5° SEMI-EJ orientation [0-11] ± 5° Thickness *4 μm 450 ± 25Total thickness variation (TTV) μm ≤ 12Total indicated reading (TIR) μm ≤ 10Warp μm ≤ 15 Particles diameter > 0.3 μm pcs. ≤ 50 Front side treatment polishedBack side treatment standard cut/etched option polished Laser marking acc. SEMI T 5 Packaging standard cassette option single wafer container

*1 other ranges upon request *2 depending on doping level or carrier concentration *3 measured according to DIN 50454-1: measurement at 9 sites *4 other values upon request

Freiberger 76.2 mm SC LEC GaAs Te doped

Gallium Arsenide Product Information · PDF file{111 } 130 ×10‑6 J cm‑2. ... +1 937...

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