GaAs MMIC Power Amplifier...Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/EM/FM-R is part of...

Email: [email protected] Tel. (301) 353-8400 Fax. (301) 353-8401 Website: www.amcomusa.com 401 Professional Drive, Gaithersburg, MD 20879

AM011037WM-BM-R AM011037WM-EM-R AM011037WM-FM-R

July 2019 Rev 4

GaAs MMIC Power Amplifier

DESCRIPTION

AMCOM’s AM011037WM-BM/EM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high

efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching

networks cover 0.1 to 1GHz. This MMIC requires output external matching to your band of interest between 0.1GHz

to 1GHz to provide maximum bandwidth flexibility. As an example, one of the available evaluation boards has over

30dB gain, 6 watts (38dBm) saturated output power over the 0.2 to 0.3GHz band. This MMIC is in a ceramic

package with both RF and DC leads at the lower level of the package to facilitate low-cost SMT assembly to PC

board. When mounting directly to PCB, please see application note AN700 for instructions. Because of high DC

power dissipation, we strongly recommend to mount this device directly on a metal heat sink. The

AM011037WM-FM-R is the AM011037WM-BM-R mounted on a gold plated copper flange carrier. The EM package

has the same footprint as the FM package with straight leads and a Copper/Tungsten flange instead of the Copper

flange. There are two screw holes on the flange to facilitate screwing on to a metal heat sink. This MMIC is RoHS

compliant.

TYPICAL PERFORMANCE*

a) TEST BOARD FOR 0.2 to 0.3 GHz

Performance at Vdd = +8V, , Vgs=-0.66V**, Idq = 1.4A, Ta = 25C

Parameters Minimum Typical Maximum

Frequency 0.2 – 0.3GHz

Small Signal Gain 29dB 31dB

Gain Ripple ± 1.0dB ± 2.0dB

P1dB 36.0dBm 37.0dBm

Psat 37.5dBm

IP3 46dBm

Efficiency @ P1dB 40%

Input Return Loss 8dB 10dB

Output Return Loss 10dB 12dB

Thermal Resistance 5°C/W

*Specifications subject to change without notice.

** Vgs may vary from lot to lot. Adjust Vgs to get Idq recommended value

APPLICATIONS

Cellular & PCS Base Station

0.1 to 1GHz Applications

Radio Service

Broadcasting

FEATURES

Frequency applications from 0.1 to 1GHz

High output power, P1dB = 37dBm

High gain > 30dB

Input matched from 0.1GHz to 1GHz

High efficiency > 40%

AMCOM Communications, Inc.


AM011037WM-BM/EM/FM-R July 2019, Rev 4

b) TEST BOARD FOR 0.8 to 1.0GHz

Performance at Vdd = +8V, Vgs=-0.66V**, Idq = 1.4A, Ta = 25C

Parameters Minimum Typical Maximum

Frequency 0.8 – 1.0GHz

Small Signal Gain 28dB 30dB

Gain Ripple ± 1.0dB ± 2.0dB

P1dB 36.0dBm 37.0dBm

Psat 37.5dBm

IP3 46dBm

Efficiency @ P1dB 35%

Input Return Loss 7dB 10dB

Output Return Loss 5dB 8dB

Thermal Resistance 5°C/W

** Vgs may vary from lot to lot

ABSOLUTE MAXIMUM RATING

Parameter Symbol Rating

Drain source voltage Vdd 10V

Gate source voltage Vgs -3V

Drain source current Idd 1.5A

Continuous dissipation

at room temperature Pt 15W

Channel temperature Tch 175C

Storage temperature Tsto -55C to +135C




SMALL SIGNAL DATA

-25

-20

-15

-10

-5

0

5

10

15

20

25

30

35

0 0.1 0.2 0.3 0.4 0.5

Frequency (GHz)

Ga

in &

Re

turn

Lo

ss

es

(d

B)

Gain

Input RL

Output RL

Gain & Return Losses for 0.2 to 0.3GHz Matching Circuit

-25

-20

-15

-10

-5

0

5

10

15

20

25

30

35

0.8 0.85 0.9 0.95 1

Frequency (GHz)

Gain

& R

etu

rn L

osses (

dB

)

Gain

Input RL

Output RL

Gain & Return Losses for 0.8 to 1.0GHz Matching Circuit




POWER DATA of 0.2 to 0.3GHz TEST BOARD

25

30

35

40

45

50

55

140 160 180 200 220 240 260 280 300 320 340

Frequency (MHz)

Ga

in (

dB

) &

P1

dB

(d

Bm

) &

Eff

. (%

)

0.00

0.50

1.00

1.50

2.00

2.50

3.00

Cu

rre

nt

(A)

P1dB

GAIN(dB)

EFF

IDS

Class AB P1dB

25

30

35

40

45

50

55

140 160 180 200 220 240 260 280 300 320 340

Frequency (MHz)

Ga

in (

dB

) &

P3

dB

(d

Bm

) &

Eff

. (%

)

0.00

0.50

1.00

1.50

2.00

2.50

3.00

Cu

rre

nt

(A)

P3dB

GAIN(dB)

EFF

Ids

Class AB P3dB

Class AB Power (Vdd=+8V, Vgs=-0.66V, Ids1=0.1A, Ids2=0.8A)




25

30

35

40

45

50

55

140 160 180 200 220 240 260 280 300 320 340

Frequency (MHz)

Ga

in (

dB

) &

P1

dB

(d

Bm

) &

Eff

. (%

)

0.00

0.50

1.00

1.50

2.00

2.50

3.00

Cu

rre

nt

(A)

P1dB

GAIN(dB)

EFF

IDS

Class B P1dB

25

30

35

40

45

50

55

140 160 180 200 220 240 260 280 300 320 340

Frequency (MHz)

Gain

(d

B)

& P

3d

B

(dB

m)

& E

ff.

(%)

0.00

0.50

1.00

1.50

2.00

2.50

3.00

Cu

rre

nt

(A)

P3dB

GAIN(dB)

EFF

Ids

Class B P3dB

Class B Power (Vdd=+8V, Vgs1=-0.93V ,Vgs2=-1.55V, Ids1=0.1A, Ids2=0.04A)




-80

-70

-60

-50

-40

-30

-20

-10

0

10 15 20 25 30 35 40

Pout(dBm)

3rd

& 5

th IM

D (

dB

c)

C/I3(L)

C/I3(H)

C/I5(L)

C/I5(H)

Class AB (200MHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

10 15 20 25 30 35 40

Pout(dBm)

3rd

& 5

th I

MD

(d

Bc)

C/I3(L)

C/I3(H)

C/I5(L)

C/I5(H)

Class AB (300MHz)

Class AB 3rd

& 5th

Order IMD at 200 & 300MHz




-80

-70

-60

-50

-40

-30

-20

-10

0

10 15 20 25 30 35 40

Pout(dBm)

3rd

& 5

th IM

D (

dB

c)

C/I3(L)

C/I3(H)

C/I5(L)

C/I5(H)

Class B (200MHz)

-80

-70

-60

-50

-40

-30

-20

-10

0

10 15 20 25 30 35 40

Pout(dBm)

3rd

& 5

th I

MD

(d

Bc)

C/I3(L)

C/I3(H)

C/I5(L)

C/I5(H)

Class B (300MHz)

Class B 3rd

& 5th

Order IMD at 200 & 300MHz




-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

140 160 180 200 220 240 260 280 300 320 340

Frequency (MHz)

2n

d &

3rd

Harm

on

ics @

P1d

B

2*F

3*F

Class AB Harmonics @1dB Comp

Class AB 2nd

& 3rd

Harmonics at P1dB

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

140 160 180 200 220 240 260 280 300 320 340

Frequency (MHz)

2n

d &

3rd

Ha

rmo

nic

s @

P1

dB

2*F

3*F

Class B Harmonics @1dB Comp

Class B 2nd

& 3rd

Harmonics at P1dB




POWER DATA of 0.8 to 1.0GHz TEST BOARD

25

30

35

40

45

50

55

700 800 900 1000 1100

Frequency (MHz)

Ga

in (

dB

) &

P1

dB

(d

Bm

) &

Eff

. (%

)

0

0.5

1

1.5

2

2.5

3

Cu

rre

nt

(A)

P1dB

GAIN(dB)

EFF

IDS

25

30

35

40

45

50

55

700 800 900 1000 1100

Frequency (GHz)

Gain

(d

B)

& P

3d

B

(dB

m)

& E

ff.

(%)

0

0.5

1

1.5

2

2.5

3

Cu

rre

nt

(A)

P3dB

GAIN(dB)

EFF

IDS

Class A Power (Vdd=+8V, Vgs1=-0.66V ,Vgs2=-0.66V, Ids1=0.15A, Ids2=1.2A)




-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

10 15 20 25 30 35 40

Pout(dBm)

3rd

& 5

th IM

D (

dB

c)

C/I3(L)

C/I3(H)

C/I5(L)

C/I5(H)

Class A (800MHz)

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

10 15 20 25 30 35 40

Pout(dBm)

3rd

& 5

th I

MD

(d

Bc)

C/I3(L)

C/I3(H)

C/I5(L)

C/I5(H)

Class A (1000MHz)

2nd

& 3rd

Order IMD (Vdd=+8V, Vgs1=-0.66V ,Vgs2=-0.66V, Ids1=0.15A, Ids2=1.2A)




-60

-50

-40

-30

-20

-10

0

700 800 900 1000 1100

Frequency (MHz)

2n

d &

3rd

Harm

on

ics a

t P

1d

B (

dB

c)

2*F

3*F

-60

-50

-40

-30

-20

-10

0

700 800 900 1000 1100

Frequency (MHz)

2n

d &

3rd

Harm

on

ics a

t P

3d

B (

dB

c)

2*F

3*F

2

nd & 3rd Harmonics (Vdd=+8V, Vgs1=-0.66V ,Vgs2=-0.66V, Ids1=0.15A, Ids2=1.2A)




PACKAGE OUTLINE (BM)

PIN LAYOUT

* Vgs1, Vgs2 may vary from lot to lot

Pin No. Function Bias*

1 Vdd1 +8V

2 NC

3 RF in

4 NC

5 Vgs1 -0.93V

6 Vgs2 -0.93V

7 RF out & Vdd2 +8V

8 RF out & Vdd2 +8V

9 RF out & Vdd2 +8V

10 NC




PACKAGE OUTLINE (EM)*

PIN LAYOUT

* EM version flange is made of CuW

** Vgs1 & Vgs2 may vary from lot to lot

Pin No. Function Bias**

1 Vdd1 +8V

2 NC

3 RF in

4 NC

5 Vgs1 -0.93V

6 Vgs2 -0.93V

7 RF out & Vdd2 +8V

8 RF out & Vdd2 +8V

9 RF out & Vdd2 +8V

10 NC




PACKAGE OUTLINE (FM)*

PIN LAYOUT

* FM version flange is made of Copper

** Vgs1 & Vgs2 may vary from lot to lot

Pin No. Function Bias**

1 Vdd1 +8V

2 NC

3 RF in

4 NC

5 Vgs1 -0.93V

6 Vgs2 -0.93V

7 RF out & Vdd2 +8V

8 RF out & Vdd2 +8V

9 RF out & Vdd2 +8V

10 NC




0.2 to 0.3GHz BM TEST CIRCUIT

RF

Input

(SMA)

RF

Output

(SMA)

Notes:

1- 10mils Rogers 4350 Material epoxied to TF

2- Ckt is for un-matched MMICs at 0.2 to 0.3GHz

3- C1=30pF, C2=51pF, C3=27pF, C4=10pF

C5=100pF, C6=20pF, C7=1000pF, C8=10uF

R1=50ohms, R2=10ohms, R3=5 ohms,

L1=22nH (B07T), L2=3.85nH (0906-4),

L3=9.85nH (1606-9), L4=18.5nH (A05T), L5=100nH

4- C1, C2, C3, C4 & C5 are ATC 100A size

5- All other Caps & Resistors are 0603 size

6- External 1µF dipped tantalum capacitors should be

attached to Vd and Vg to decouple external bias leads




0.8 to 1.0GHz BM TEST CIRCUIT

RF

Input

(SMA)

RF

Output

(SMA)

Notes:

1- 10mils Rogers 4350 Material epoxied to TF

2- Ckt is for un-matched MMICs at 0.8 to 1.0GHz

3- C1=10pF, C3=3.3pF, C4=2pF, C5=51pF,

C6=20pF, C7=1000pF, C8=4.7pF, L1=2.7nH

R1=50ohms, R2=10ohms, R3=5 ohms

4- C1, C2, C3, C4 & C5 are ATC 600S series

5- All other Caps & Resistors are 0603 size

6- External 1µF dipped tantalum capacitors should be

attached to Vd and Vg to decouple external bias leads

GaAs MMIC Power Amplifier...Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/EM/FM-R is part of...

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