flyer IUMRS-ICEM2014 GroupF - NIMS · 2014. 4. 8. · properties such as attractive dielectric...
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TWTC Nangang Exhibition Hall, Taipei, Taiwan, 10-14 June, 2014 IUMRS-ICEM 2014 International Union of Materials Research Societies - International Conference on Electronic Materials 2014 Group F: Oxide materials for advanced electronics Scope: This symposium is aimed at bringing and bridging together scientists working on different areas of synthesis, structural/physical characterization and integration of functional oxides for application in electronics. Oxide materials exhibit a great variety of properties such as attractive dielectric properties, piezoelectricity, ferroelectricity, photoelectricity, magnetism, and so on. These properties can be controlled and tuned by appropriately setting their film thickness, nanostructure, grain size and intrinsic and/or thermal stresses. Their integration on a conventional semiconductor platform or new platform could enable the realization of a great variety of devices: opto- or thermo-electric conversion, sensors, spintronics and plasmonics. Progresses in the growth of thin films, heterostructures, nanostructures (control of interfaces in superlattices, direct epitaxy on silicon or sapphire, new ALD schemes, etc) will be discussed. Synthesis of oxides using CVD/ALD methods as well as PVD (sputtering, MBE, PLD, etc) and oxide nanocomposites, nanowires and nanoparticles will be discussed. Materials challenges such as composition control, strain engineering, defect engineering, band-gap engineering as well as integrity after processing (etching, anneal, etc) will be addressed, non-volatile memories (resistive RAM, ferroelectric tunnel junctions, etc), gas sensors and actuators applications will be reviewed. The effect of the size reduction in nano-scaled devices on the physical properties will be discussed. Symposiums: F1: Advanced thin films and heterostructure towards novel oxide electronics Organizers: Dr. T. Tsuchiya (Japan), Prof. T. Yamamoto (Japan), Prof. T. Endo (Japan), Prof. E. Y. Chang (Taiwan), Dr. T. Nakajima (Japan); Co-organizers: Prof. J. M. Colino (Spain), Dr.T. Prikhna (Ukraine), Prof. J-J. Delaunay (Japan), Prof. P. Badica (Romania), Prof. B. Masenelli (France) F2: p- or n-type oxide films, transparent conductive films and devices: photovoltaic, optoelectronic, plasmonic, gas sensor and microwave devices Organizers: Prof. T. Yamamoto (Japan), Prof. E. Y. Chang (Taiwan), Prof. R-H. Horng (Taiwan), Prof. T. Endo (Japan), Dr. T. Tsuchiya (Japan); Co-organizers: Prof. W. Lojlowski (Poland), Prof. R. Philip (India), Prof. S. Ubizskii (Ukraine), Dr. E. Pincik (Slovakia) F3: Oxide devices: thermoelectric conversion, resistive sensors, spintronics, and superconductors Organizers: Dr. S. Arisawa (Japan), Prof. H. Kezuka (Japan), Prof. T-Y. Tseng (Taiwan), Prof. T. Yamamoto (Japan), Prof. T. Endo (Japan); Co-organizers: Dr. I. Bozovic (USA), Prof. J. Nogués (Spain), Prof. M. Belogolovskii (Ukraina) F4: Oxide nanocomposites, nanowire, nanoparticle and bulks Organizers: Prof. T. Endo (Japan), Prof. T-Y. Tseng (Taiwan), Prof. Y. Nakamura (Japan); Co-organizers: Prof. J. Driscoll (UK), Dr. Z. C. Orel (Slovenia), Prof. G. Westin (Sweden), Prof. Y. Strzhemechny (USA) Hot topics to be covered, but are not limited to: • Synthesis and characterization of oxide nanomaterials/nanocomposites, thin films, and multi-layered systems • Characterization and control of intrinsic or extrinsic defects in oxide films heterostructures and nanocomposites • Functional oxide materials arising from electron correlations (i.e., magnetic, ferroelectric, superconducting, etc.) • Oxide films deposited on plastic-sheet or flexible polymer substrates • Ferroelectrics and multiferroics: synthesis, properties and applications • Control of conduction type, n- or p-type, of oxide films for photovoltaics and electrooptics (wide band gap oxides, LED and telecommunication application) • Transparent conductive oxides: plasmonic materials for telecom wavelengths, biosensor • Interfacial properties (i.e., ferromagnetic/superconductor, novel p-n junctions, exchange bias, novel properties at heterointerfaces) • Advanced oxide superconductors • Theoretical and computational approaches Important dates: Abstract submission deadline: 31 Dec. 2013 Early bird registration deadline: 20 Apr. 2014 Online submission and information in the conference website: http://www.iumrs-icem2014.tw website http://www.iumrs-icem2014.tw Lead Organizer: Prof. Tamio Endo (Mie University, JAPAN) [email protected] Steering Committee: Prof. Tetsuya Yamamoto (Kochi Univ. of Technology, JAPAN) [email protected] Dr. Tomohiko Nakajima (AIST, JAPAN) [email protected] Prof. Hiroshi Kezuka (Tokyo Univ. of Technology, JAPAN) [email protected] Dr. Tetsuo Tsuchiya (AIST, JAPAN) Prof. Yoshinobu Nakamura (The Univ. of Tokyo, JAPAN) Dr. Shunichi Arisawa (NIMS, JAPAN) Group-F is conducted by Team Harmonized Oxides. http://www.nims.go.jp/nqe/sa/tho/index.html IUMRS-ICEM 2014 International Union of Materials Research Societies - Inter Group F: Oxide materials for a
Transcript of flyer IUMRS-ICEM2014 GroupF - NIMS · 2014. 4. 8. · properties such as attractive dielectric...
TWTC Nangang Exhibition Hall, Taipei, Taiwan, 10-14 June, 2014IUMRS-ICEM 2014International Union of Materials Research Societies - International Conference on Electronic Materials 2014
Group F: Oxide materials for advanced electronics
Scope: This symposium is aimed at bringing and bridging together scientists working on different areas of synthesis, structural/physical characterization and integration of functional oxides for application in electronics. Oxide materials exhibit a great variety of properties such as attractive dielectric properties, piezoelectricity, ferroelectricity, photoelectricity, magnetism, and so on. These properties can be controlled and tuned by appropriately setting their film thickness, nanostructure, grain size and intrinsic and/or thermal stresses. Their integration on a conventional semiconductor platform or new platform could enable the realization of a great variety of devices: opto- or thermo-electric conversion, sensors, spintronics and plasmonics.
Progresses in the growth of thin films, heterostructures, nanostructures (control of interfaces in superlattices, direct epitaxy on silicon or sapphire, new ALD schemes, etc) will be discussed. Synthesis of oxides using CVD/ALD methods as well as PVD (sputtering, MBE, PLD, etc) and oxide nanocomposites, nanowires and nanoparticles will be discussed. Materials challenges such as composition control, strain engineering, defect engineering, band-gap engineering as well as integrity after processing (etching, anneal, etc) will be addressed, non-volatile memories (resistive RAM, ferroelectric tunnel junctions, etc), gas sensors and actuators applications will be reviewed. The effect of the size reduction in nano-scaled devices on the physical properties will be discussed.
Symposiums: F1: Advanced thin films and heterostructure towards novel oxide electronics Organizers: Dr. T. Tsuchiya (Japan), Prof. T. Yamamoto (Japan), Prof. T. Endo (Japan), Prof. E. Y. Chang (Taiwan), Dr. T. Nakajima (Japan); Co-organizers: Prof. J. M. Colino (Spain), Dr.T. Prikhna (Ukraine), Prof. J-J. Delaunay (Japan), Prof. P. Badica (Romania), Prof. B. Masenelli (France)
F2: p- or n-type oxide films, transparent conductive films and devices: photovoltaic, optoelectronic, plasmonic, gas sensor and microwave devices Organizers: Prof. T. Yamamoto (Japan), Prof. E. Y. Chang (Taiwan), Prof. R-H. Horng (Taiwan), Prof. T. Endo (Japan), Dr. T. Tsuchiya (Japan); Co-organizers: Prof. W. Lojlowski (Poland), Prof. R. Philip (India), Prof. S. Ubizskii (Ukraine), Dr. E. Pincik (Slovakia)
F3: Oxide devices: thermoelectric conversion, resistive sensors, spintronics, and superconductors Organizers: Dr. S. Arisawa (Japan), Prof. H. Kezuka (Japan), Prof. T-Y. Tseng (Taiwan), Prof. T. Yamamoto (Japan), Prof. T. Endo (Japan); Co-organizers: Dr. I. Bozovic (USA), Prof. J. Nogués (Spain), Prof. M. Belogolovskii (Ukraina)
F4: Oxide nanocomposites, nanowire, nanoparticle and bulks Organizers: Prof. T. Endo (Japan), Prof. T-Y. Tseng (Taiwan), Prof. Y. Nakamura (Japan); Co-organizers: Prof. J. Driscoll (UK), Dr. Z. C. Orel (Slovenia), Prof. G. Westin (Sweden), Prof. Y. Strzhemechny (USA)
Hot topics to be covered, but are not limited to: • Synthesis and characterization of oxide nanomaterials/nanocomposites, thin films, and multi-layered systems• Characterization and control of intrinsic or extrinsic defects in oxide films heterostructures and nanocomposites • Functional oxide materials arising from electron correlations (i.e., magnetic, ferroelectric, superconducting, etc.)• Oxide films deposited on plastic-sheet or flexible polymer substrates• Ferroelectrics and multiferroics: synthesis, properties and applications• Control of conduction type, n- or p-type, of oxide films for photovoltaics and electrooptics (wide band gap oxides, LED and telecommunication application)• Transparent conductive oxides: plasmonic materials for telecom wavelengths, biosensor• Interfacial properties (i.e., ferromagnetic/superconductor, novel p-n junctions, exchange bias, novel properties at heterointerfaces)• Advanced oxide superconductors• Theoretical and computational approaches
Important dates: Abstract submission deadline: 31 Dec. 2013 Early bird registration deadline: 20 Apr. 2014Online submission and information in the conference website: http://www.iumrs-icem2014.tw
website http://www.iumrs-icem2014.tw
Lead Organizer: Prof. Tamio Endo (Mie University, JAPAN) [email protected]
Steering Committee: Prof. Tetsuya Yamamoto (Kochi Univ. of Technology, JAPAN) [email protected]. Tomohiko Nakajima (AIST, JAPAN) [email protected]. Hiroshi Kezuka (Tokyo Univ. of Technology, JAPAN) [email protected]. Tetsuo Tsuchiya (AIST, JAPAN)Prof. Yoshinobu Nakamura (The Univ. of Tokyo, JAPAN)Dr. Shunichi Arisawa (NIMS, JAPAN)
Group-F is conducted by Team Harmonized Oxides. http://www.nims.go.jp/nqe/sa/tho/index.html
IUMRS-ICEM 2014International Union of Materials Research Societies - International Conference on Electronic Materials 2014
Group F: Oxide materials for advanced electronics
