FJMA790 PNP Epitaxial Silicon Transistor - Farnell element14 · FJMA790 PNP Epitaxial Silicon...
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©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJMA790 Rev. A2 FJMA790 PNP Epitaxial Silicon Transistor tm May 2008 FJMA790 PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant Absolute Maximum Ratings T a = 25°C unless otherwise noted Thermal Characteristics T a =25°C unless otherwise noted Note1): The device mounted on a 1inch 2 pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material. Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material Symbol Parameter Value Units V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -35 V V EBO Emitter-Base Voltage -5 V I C Collector Current (DC) -2 A P D Power Dissipation Note1) Note2) 1.56 0.8 W W T J Junction Temperature 150 °C T STG Storage Temperature -55 ~ 150 °C Symbol Parameter Max. Units RΘ JA Thermal Resistance, Junction to Ambient Note1) Note2) 80 154 °C/W °C/W MicroFET2X2 Pin 1 Pin 3 Pin 6 Pin 4 1 2 3 6 5 4 C C E C C B Collector Emitter
Transcript of FJMA790 PNP Epitaxial Silicon Transistor - Farnell element14 · FJMA790 PNP Epitaxial Silicon...
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFJMA790 Rev. A2
FJMA
790 PNP Epitaxial Silicon Transistor
tm
May 2008
FJMA790PNP Epitaxial Silicon TransistorHigh current surface mount PNP silicon switching transistor for load management in portable applications• High Collector current
• Low Collector-Emitter Saturation Voltage
• RoHS Compliant
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Thermal Characteristics Ta=25°C unless otherwise noted
Note1): The device mounted on a 1inch2 pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material.
Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material
Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -35 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -2 A
PD Power Dissipation Note1)
Note2)
1.560.8
WW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Max. UnitsRΘJA Thermal Resistance, Junction to Ambient Note1)
Note2)
80154
°C/W°C/W
MicroFET2X2
Pin 1 Pin 3
Pin 6 Pin 4
1
2
3
6
5
4
C
C
E
C
C
B
Collector Emitter
2 www.fairchildsemi.comFJMA790 Rev. A2
FJMA
790 PNP Epitaxial Silicon Transistor
Electrical Characteristics Ta = 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Conditions Min. Typ. Max. UnitsBVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V
BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -35 V
BVEBO Emitter-Base Breakdown Voltage IC = -100µA, IC = 0 -5 V
ICBO Collector Cut-off Current VCB = -35V, IC = 0 -0.1 µA
IEBO Emitter Cut-off Current VEB = -4V, IC = 0 -0.1 µA
hFE DC Current Gain VCE = -1.5V, IC = -1AVCE = -1.5V, IC = -1.5AVCE = -3V, IC = -2AVCE = -2V, IC = -500mA
100100100100
400
VCE(sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -5mAIC = -1A, IB = -10mAIC = -2A, IB = -50mA
-250-350-450
mVmVmV
VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -10mA -0.9 V
VBE(on) Base-Emitter On Voltage VCE = -2V, IC = -1A -0.9 V
Device Marking Device Package Reel Size Tape Width Quantity790 FJMA790 MLP 2×2 Single 7” 8mm 3,000 units
3 www.fairchildsemi.comFJMA790 Rev. A2
FJMA
790 PNP Epitaxial Silicon Transistor
Typical Characteristics
1E-3 0.01 0.1 1
100
200
300
400
500
600
-40oC
Vce=-1.5V
125oC
75oC
25oC
hfe,
DC
Cur
rent
Gai
n
Collector Current, [A]1E-3 0.01 0.1 1
100
200
300
400
500
-40oC
Vce=-2.0V
125oC
75oC
25oC
hfe,
DC
Cur
rent
Gai
n
Collector Current, [A]
Figure 1. DC Current Gain, Vce=1.5V Figure 2. DC Current Gain, Vce=2V
1E-3 0.01 0.1 1
100
200
300
400
500
-40oC
Vce=-3.0V
125oC
75oC
25oC
hfe,
DC
Cur
rent
Gai
n
Collector Current, [A]0.01 0.1 1
0.0
0.1
0.2
0.3
0.4
0.5
-40oC
Ic=40Ib
125oC
75oC
25oC
Vce(
sat),
Sat
urat
ion
Cur
rent
,[V]
Collector Current, [A]
Figure 3. DC Current Gain,Vce=3V Figure 4. Collector-Emitter Satuation Voltage(1)
0.01 0.1 10.0
0.2
0.4
0.6
0.8
1.0
-40oC
Ic=100Ib
125oC
75oC
25oC
Vce
(sat
), S
atur
atio
n C
urre
nt,[V
]
Collector Current, [A]
0.01 0.1 1
0.4
0.6
0.8
1.0
-40oC
Ic=100Ib
125oC
75oC
25oC
Vbe
(sat
), S
atur
atio
n C
urre
nt,[V
]
Collector Current, [A]
Figure 5. Collector-Emitter Satuation Voltage(2) Figure 6. Base-Emitter Saturation Voltage
4 www.fairchildsemi.comFJMA790 Rev. A2
FJMA
790 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
0.01
0.1
1
0.4 0.6 0.8 1.0
-40oC
Vce=-2V
125oC 75oC 25oC
Vfbe(on), Turn on voltage,[V]
Em
itter
Cur
rent
, [A
]
25 50 75 100 1251E-11
1E-10
1E-9
1E-8
1E-7
Vcb=-35V
Icbo
(A),
Rev
erse
Lea
kage
Cur
rent
Ta(oC), Ambent Temperature
Figure 7. Base- Emitter Turn On Voltage Figure 8. Collector-Base Leakage Current
25 50 75 100 1251E-11
1E-10
1E-9
1E-8
1E-7
Veb=-4V
Icbo
(A),
Rev
erse
Lea
kage
Cur
rent
Ta(oC), Ambent Temperature
0 25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
Pd, P
ower
Dis
sipa
tion,
[W]
Case Temperature, Ta[oC]
Figure 9. Base-Emitter Leakage Current Figure 10. Power Derating
Figure 11. Input Capacitance
0 1 2 3 4 5100
125
150
175
200
225
250
275
300
f=1mhz
Inpu
t Jun
tion
Cap
acita
nce,
Cib[p
F]
Reverse Voltage, VR[V]
0 10 20 30 40 5010
20
30
40
50
60
70
80
90
100
f=1mhz
Out
put J
untio
n C
apac
itanc
e, C
ob[p
F]
Reverse Voltage, VR[V]
Figure 12. Output Capacitance
5 www.fairchildsemi.comFJMA790 Rev. A2
FJMA
790 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response
0 .01
0 .1
1
0 .0001 0 .001 0 .01 0 .1 1 10 100 1000
t 1 , T IM E (s e c)
r(t),
NO
RM
ALI
ZED
EFF
ECTI
VE T
RA
NSI
ENT
THER
MA
L R
ESIS
TAN
CE
Rθ J A ( t) = r ( t) * Rθ J A
Rθ J A = 154 °C/W
TJ - TC = P * Rθ J A ( t)Du ty Cy c le , D = t1 / t2
P(p)
t1
t2
SIN G LE PU LSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
6 www.fairchildsemi.comFJMA790 Rev. A2
FJMA
790 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
MicroFET2X2
Dimensions in Milimeters
FJMA
790 PNP Epitaxial Silicon Transistor
7 www.fairchildsemi.comFJMA790 Rev. A2
Rev. I34
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Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
