FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2....
Transcript of FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2....
![Page 1: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/1.jpg)
FinFET sensitivity studies
Xiaowei Jiang
A’nan Xiang
![Page 2: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/2.jpg)
Background • Bulk-Si MOS scaling challenges:
• As devices are scaled down, Vt variation and subthreshold swing are getting worse- Drain competes with Gate to control the channel barrier-short channel effect (SCE)
• In order to suppress SCE, heavy halo and channel doping will be required degrading carrier mobility
Tsu Jae King, “FinFETs for Nanoscale CMOS Digital Integrated Circuits”, Proceedings of ICCAD, 2005
![Page 3: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/3.jpg)
One solution- FinFET • The gate controls the thin body from more than one side
suppressing SHE- 3-D structure
• Process flow and layout similar to that of the conventional MOS
• Easy to scale
• Since 2011, ITRS shows FinFET and ultra-thin-body SOI as the two successor of MOSFETs
• Intel will use 3-D FinFET for 22nm
![Page 4: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/4.jpg)
Parameter identification
• Doping
• Channel length
• Oxide thickness
• Silicon thickness
• V_dd
• To check the sensitivity of: Delay and Power consumption( static power, total power, dynamic power)
![Page 5: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/5.jpg)
Methodology
• Model: SOI-based PTM model for FinFET http://www.ee.ucla.edu/~ankur/parent/ee201c/finfet/
• Simulation Tool: HSPICE
• For delay, we measure the FO4 delay with 3 stages
![Page 6: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/6.jpg)
Methodology
http://users.ece.gatech.edu/~jeff/ece4420/powerlecture.pdf
![Page 7: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/7.jpg)
Static power low output measurement
Static power high output measurement
Methodology • For static power consumption
http://users.ece.gatech.edu/~jeff/ece4420/powerlecture.pdf
![Page 8: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/8.jpg)
Methodology • For dynamic power:
• First measure the average switching power of H-L and L-H per Clock Period (total power)
• Then the dynamic power can be calculated by
http://users.ece.gatech.edu/~jeff/ece4420/powerlecture.pdf
𝐸𝑡𝑜𝑡𝑎𝑙_𝐻𝐿 = 𝐸𝑠𝑡𝑎𝑡𝑖𝑐_𝐿 + 𝐸𝑑𝑦𝑛𝑎𝑚𝑖𝑐_𝐻𝐿
𝐸𝑡𝑜𝑡𝑎𝑙_𝐿𝐻 = 𝐸𝑠𝑡𝑎𝑡𝑖𝑐_𝐻 + 𝐸𝑑𝑦𝑛𝑎𝑚𝑖𝑐_𝐿𝐻
![Page 9: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/9.jpg)
Static power dissipation
• Static Power vs channel length
![Page 10: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/10.jpg)
Static power dissipation varies with channel length
• Sub threshold leakage current (VT and SS)
R. Ramesh, M. Madheswaran, K. KannanSelf, “consistent 3-D numerical modeling of a uniformly doped nanoscale FinFET using interpolating wavelets”, C.: J. Comput. Electron. 10, 331-340, 2011
![Page 11: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/11.jpg)
Static power dissipation • Static Power vs Pnch
1E13 1E14 1E15 1E16 1E17 1E18 1E19-20
0
20
40
60
80
100
120
140
Sta
tic
Po
we
r(a
J)
Doping Concentration(cm-3)
staticL
staticH
![Page 12: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/12.jpg)
Static power dissipation varies with doping concentration
Dnyanesh S. Havaldar, Guruprasad Katti, Nandita DasGupta, and Amitava DasGupta, “Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson’s Equation”, IEEE Trans. Electron Devices, vol. 53, No. 4, pp. 737-742, Apr 2006
Opposite with our simulation result: probably due to random dopant fluctuation A simple calculation: AR=5, T=30nm, H= 150nm, L= 45nm, V= 2.025E-16cm3, less than one atom within the fin!!!
![Page 13: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/13.jpg)
Total power and dynamic power
• Average Power per switch vs Pnch
• Dynamic Power vs Pnch
1E13 1E14 1E15 1E16 1E17 1E180
100
200
300
400
500
600
700
800
To
tal P
ow
er
(aJ
)
Doping Concentration(cm-3
)
THL
TLH
1E14 1E15 1E16 1E17 1E18 1E190
100
200
300
400
500
600
700
800
Dy
na
mic
Po
we
r(a
J)
Doping Concentration(cm-3)
dynamicHL
dynamicLH
Not very sensitive
![Page 14: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/14.jpg)
• Average Power per switch vs len
• Dynamic Power vs len
Total power and dynamic power
![Page 15: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/15.jpg)
Simulation Results • Input vs Output
![Page 16: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/16.jpg)
Delay • Delay vs len
tlh
thl
Ion (channel resistance), load capacitance: gate capacitance and parasitic capacitance As devices are scaled down, parasitic capacitance starts to dominant the effective capacitance
![Page 17: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/17.jpg)
Delay • Delay vs Pnch
tlh
thl
![Page 18: FinFET sensitivity studieseda.ee.ucla.edu/EE201C/uploads/Winter2012/903898383Jiang... · 2012. 2. 13. · 1E14 1E15 1E16 1E17 1E18 1E19 0 100 200 300 400 500 600 700 800) Doping Concentration](https://reader035.fdocuments.us/reader035/viewer/2022081601/60fef1064ac2827492643c53/html5/thumbnails/18.jpg)
Conclusion • Total power dissipation is not very sensitive to
channel length or doping concentration • FO4 inverter delay increases with channel length
and doping concentration • Random variation associated with the
discreteness of dopant atoms needs to be carefully included into the model
• With superior control of SCE and higher driving current, FinFET is a promising solution to surmount the challenges of increasing leakage current and device-to-device variability for future high-density, low-power ICs.