Figure 11.1 (p. 260)

Trends of power supply voltage VDD, threshold voltage VT, and

gate oxide thickness d

versus channel length for

CMOS logic technologies.

Points are collected from data published

over recent years.

Figure 11.2 (p. 260)Challenges for 180-nm and smaller

MOSFETs.

Figure 11.3 (p. 263)System-on-a-chip of a conventional

personal computer motherboard.

Figure 11.4 (p. 263)Schematic cross section of the embedded DRAM including DRAM cells and logic

MOSFETs. There is no height difference in the trench capacitor cell because of the

DRAM cell structure. M1 to M5 are metal interconnections, and V1 to V4 are via holes.