© Semiconductor Components Industries, LLC, 2016

May, 2021 − Rev. 61 Publication Order Number:

FDPC5030SG/D

MOSFET - Dual N‐Channel,Asymmetric,POWERTRENCH�

PowerClip 30 V

FDPC5030SG

General DescriptionThis device includes two specialized N-Channel MOSFETs in

a dual package. The switch node has been internally connected toenable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFET� (Q2) havebeen designed to provide optimal power efficiency.

Features

Q1: N-Channel• Max RDS(on) = 5.0 m� at VGS = 10 V, ID = 17 A

• Max RDS(on) = 6.5 m� at VGS = 4.5 V, ID = 14 A

Q2: N-Channel• Max RDS(on) = 2.4 m� at VGS = 10 V, ID = 25 A

• Max RDS(on) = 3.0 m� at VGS = 4.5 V, ID = 22 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting inLower Switching Losses.

• MOSFET Integration Enables Optimum Layout for Lower CircuitInductance and Reduced Switch Node Ringing.

• RoHS Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load

Table 1. PIN DESCRIPTION

Pin Name Description

1 HSG High Side Gate

2 GR Gate Return

3, 4, 10 V+(HSD) High Side Drain

5, 6, 7 SW Switching Node, Low Side Drain

8 LSG Low Side Gate

9 GND (LSS) Low Side Source

Power Clip 56(PQFN8 5x6)CASE 483AR

See detailed ordering and shipping information on page 2 ofthis data sheet.

ORDERING INFORMATION

www.onsemi.com

N-Channel MOSFET

MARKING DIAGRAM

$Y = ON Semiconductor Logo&Z = Assembly Plant Code&3 = Numeric Date Code&K = Lot CodeFDPC5030SG = Specific Device Code

$Y&Z&3&KFDPC5030SG

PIN1

Top View Bottom View

ELECTRICAL CONNECTION

PIN ASSIGNMENT

GR

LSG

SW

SW

SW

V+

V+

HSG

*

*PAD10 V+(HSD)

GN

D(L

SS

)P

AD

9

FDPC5030SG

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MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)

Symbol Parameter Q1 Q2 Unit

VDS Drain to Source Voltage 30 30 V

Bvdsst Bvdsst (Transient) < 100 ns 36 36 V

VGS Gate to Source Voltage +/−20 +/−12 V

ID Drain Current − Continuous (TC = 25°C) (Note 5) 56 84

A

− Continuous (TC = 100°C) (Note 5) 35 53

− Continuous (TA = 25°C) 17 (Note 1a) 25 (Note 1b)

− Pulsed (TA = 25°C) (Note 4) 227 503

EAS Single Pulsed Avalanche Energy (Note 3) 54 96 mJ

PD Power Dissipation for Single Operation(TC = 25°C)(TA = 25°C)(TA = 25°C)

232.1 (Note 1a)1.0 (Note 1c)

252.3 (Note 1b)1.1 (Note 1d)

W

TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Q1 Q2 Unit

R�JC Thermal Resistance, Junction to Case 5.6 4.9 �C/W

R�JA Thermal Resistance, Junction to Ambient 60 (Note 1a) 55 (Note 1b) �C/W

R�JA Thermal Resistance, Junction to Ambient 130 (Note 1c) 120 (Note 1d) �C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device Top Marking Package Reel Size Tape Width Quantity

FDPC5030SG FDPC5030SG Power Clip 56 13″ 12 mm 3,000 Units

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Type Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage ID = 250 �A, VGS = 0 VID = 1 mA, VGS = 0 V

Q1Q2

3030

−−

−−

V

�BVDSS/�TJ Breakdown Voltage TemperatureCoefficient

ID = 250 �A, referenced to 25�CID = 10 mA, referenced to 25�C

Q1Q2

−−

1516

−−

mV/�C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 VVDS = 24 V, VGS = 0 V

Q1Q2

−−

−−

1500

�A

IGSS Gate to Source Leakage Current, Forward

VGS = ±20 V, VDS= 0 VVGS = ±12 V, VDS= 0 V

Q1Q2

−−

−−

±100±100

nAnA

ON CHARACTERISTICS

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 �AVGS = VDS, ID = 1 mA

Q1Q2

1.01.0

1.71.6

3.03.0

V

�VGS(th)/�TJ Gate to Source Threshold VoltageTemperature Coefficient

ID = 1 �A, referenced to 25�CID = 10 mA, referenced to 25�C

Q1Q2

−−

−5−3

−−

mV/�C

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol UnitMaxTypMinTypeTest ConditionsParameter

ON CHARACTERISTICS

RDS(on) Drain to Source On Resistance VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 17 A, TJ =125�C

Q1 −−−

4.15.45.7

5.06.57.0

m�

VGS = 10 V, ID = 25 AVGS = 4.5 V, ID = 22 A VGS = 10 V, ID = 25 A,TJ =125�C

Q2 −−−

1.92.42.7

2.43.03.4

gFS Forward Transconductance VDS = 5 V, ID = 17 AVDS = 5 V, ID = 25 A

Q1Q2

−−

93139

−−

S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance Q1:VDS = 15 V, VGS = 0 V, f = 1 MHZQ2: VDS = 15 V, VGS = 0 V, f = 1 MHZ

Q1Q2

−−

12242730

17153825

pF

Coss Output Capacitance Q1Q2

−−

397801

5601125

pF

Crss Reverse Transfer Capacitance Q1Q2

−−

4272

60100

pF

Rg Gate Resistance Q1Q2

0.10.1

0.51.1

1.52.2

�

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time Q1:VDD = 15 V, ID = 17 A, RGEN = 6 �Q2:VDD = 15 V, ID = 25 A, RGEN = 6 �

Q1Q2

−−

810

1619

ns

tr Rise Time Q1Q2

−−

24

1010

ns

td(off) Turn-Off Delay Time Q1Q2

−−

1830

3348

ns

tf Fall Time Q1Q2

−−

23

1010

ns

Qg Total Gate Charge VGS = 0 V to 10 V Q1: VDD = 15 V, ID = 17 AQ2: VDD = 15 V, ID = 25 A

Q1Q2

−−

1739

2455

nC

Qg Total Gate Charge VGS = 0 V to 4.5 V Q1: VDD = 15 V, ID = 17 AQ2: VDD = 15 V, ID = 25 A

Q1Q2

−−

818

1126

nC

Qgs Gate to Source Gate Charge Q1: VDD = 15 V, ID = 17 AQ2: VDD = 15 V, ID = 25 A

Q1Q2

−−

3.16.1

−−

nC

Qgd Gate to Drain “Miller” Charge Q1: VDD = 15 V, ID = 17 AQ2: VDD = 15 V, ID = 25 A

Q1Q2

−−

2.04.3

−−

nC

SOURCE-DRAIN DIODE CHARACTERISTICS

VSD Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 17 A (Note 2)VGS = 0 V, IS = 25 A (Note 2)

Q1Q2

− 0.80.8

1.21.2

V

trr Reverse Recovery Time Q1IF = 17 A, di/dt = 100 A/�sQ2IF = 25 A, di/dt = 230 A/�s

Q1Q2

− 2327

3744

ns

Qrr Reverse Recovery Charge Q1Q2

− 831

1650

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:1. R�JA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R�CA is determined

by the user’s board design.

FDPC5030SG

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60°C/W when mounted on a 1 in2 pad of 2 oz copper.

130°C/W when mounted on a minimum pad of 2 oz copper.

a)

c)

G DF

DS

SF

SS

G DF

DS

SF

SS

G DF

DS

SF

SS

G DF

DS

SF

SS

55°C/W when mounted on a 1 in2 pad of 2 oz copper.

120°C/W when mounted on a minimum pad of 2 oz copper.

b)

d)

2. Pulse Test: Pulse Width < 300 �s, Duty cycle < 2.0%.3. Q1: EAS of 54 mJ is based on starting TJ = 25�C; L = 3 mH, IAS = 6 A, VDD = 30 V. VGS = 10 V, 100% tested at L = 0.1 mH, IAS = 20 A.

Q2: EAS of 96 mJ is based on starting TJ = 25�C; L = 3 mH, IAS = 8 A, VDD = 30 V. VGS = 10 V, 100% tested at L = 0.1 mH, IAS = 27 A.4. Pulsed Id refer to Figure NO TAG and Figure NO TAG SOA graphs for more details.5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &

electro-mechanical application board design.

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TYPICAL CHARACTERISTICS (Q1 N-Channel)(TJ = 25°C unless otherwise noted)

0

15

30

45

60

VGS = 6 VVGS = 4.5 V

VGS = 3 V

PULSE DURATION = 80 msDUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 10 V

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 15 30 45 600.0

1.5

3.0

4.5

6.0

VGS = 3.5 V

PULSE DURATION = 80 msDUTY CYCLE = 0.5% MAX

NO

RM

AL

IZE

DD

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 6 V

VGS = 3 V

VGS = 10 V

−75 −50 −25 0 25 50 75 100 125 1500.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6ID = 17 AVGS = 10 V

NO

RM

AL

IZE

D D

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

TJ, JUNCTION TEMPERATURE (oC)

0

10

20

30

40

TJ = 125 oC

ID = 17 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS

(on

),D

RA

IN T

O

SO

UR

CE

ON−R

ES

IST

AN

CE

(mW

) PULSE DURATION = 80msDUTY CYCLE = 0.5% MAX

0 1 2 3 4 50

15

30

45

60

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80msDUTY CYCLE = 0.5% MAX

TJ = −55oC

TJ = 25 oC

I D, D

RA

IN C

UR

RE

NT

(A

)

VGS, GATE TO SOURCE VOLTAGE (V)0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

60

TJ = −55oC

TJ = 25 oCTJ = 150 oC

VGS = 0 V

I S, R

EV

ER

SE

DR

AIN

CU

RR

EN

T (

A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. DrainCurrent and Gate Voltage

Figure 3. Normalized On Resistance vs. JunctionTemperature

Figure 4. Normalized On Resistance vs. Gate toSource Voltage

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltagevs. Source Current

0.0 0.2 0.4 0.6 0.8 1.0

2 3 4 5 6 7 8 9 10

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TYPICAL CHARACTERISTICS (Q1 N-Channel)(TJ = 25°C unless otherwise noted)

0 4 8 12 16 200

2

4

6

8

10ID = 17 A

VDD = 10 V

VDD = 15 V

VG

S, G

AT

E T

O S

OU

RC

E V

OL

TA

GE

(V

)

Qg, GATE CHARGE (nC)

VDD = 20 V

0.1 1 10 3010

100

1000

3000

f = 1 MHz

VGS = 0 V

CA

PA

CIT

AN

CE

(p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

0.001 0.01 0.1 1 10 1001

10

30

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS, A

VA

LA

NC

HE

CU

RR

EN

T (

A)

25 50 75 100 125 1500

15

30

45

60

VGS = 10 V

RqJC = 5.6 oC/W

VGS = 4.5 V

I D,D

RA

IN C

UR

RE

NT

(A

)

TC, CASE TEMPERATURE (oC)

0.1 1 10 800.1

1

10

100

500

CURVE BENT TO

MEASURED DATA

10 �s

10 msDC

100 �s

1 ms

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA ISLIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RqJC = 5.6 oC/W

TC = 25 oC

10−5 10−4 10−3 10−2 10−1 110

100

1000

5000

SINGLE PULSE

RqJC = 5.6oC/W

TC = 25oC

P( P

K),

PE

AK

TR

AN

SIE

NT

PO

WE

R (

W)

t, PULSE WIDTH (sec)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage

Figure 9. Unclamped Inductive SwitchingCapability

Figure 10. Maximum Continuous Drain Current vs.Case Temperature

Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum PowerDissipation

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TYPICAL CHARACTERISTICS (Q1 N-Channel)(TJ = 25°C unless otherwise noted)

10−5 10−4 10−3 10−2 10−1 10.001

0.01

0.1

1

2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

r(t)

, NO

RM

AL

IZE

D E

FF

EC

TIV

E T

RA

NS

IEN

TT

HE

RM

AL

RE

SIS

TA

NC

E

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

t1t2

NOTES:

ZqJC(t) = r(t) x RqJC

RqJC = 5.6 oC/W

Duty Cycle, D = t1 / t2

Peak T J = PDM x ZqJC(t) + TC

Figure 13. Junction−to−Case Transient Thermal Response Curve

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TYPICAL CHARACTERISTICS (Q2 N-Channel)(TJ = 25°C unless otherwise noted)

0 1 2 30

30

60

90

120

VGS = 3.5 V

VGS = 3 V

VGS = 4.5 V

PULSE DURATION = 80 msDUTY CYCLE = 0.5% MAXVGS = 2.5 V

VGS = 10 V

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 24 48 72 96 1200

2

4

6

8

10

VGS = 3 V

PULSE DURATION = 80 msDUTY CYCLE = 0.5% MAX

NO

RM

AL

IZE

DD

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

ID, DRAIN CURRENT (A)

VGS = 3.5 V

VGS = 4.5 V

VGS = 2.5 V

VGS = 10 V

−75 −50 −25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6ID = 25 A

VGS = 10 V

NO

RM

AL

IZE

D D

RA

IN T

O S

OU

RC

E O

N−R

ES

IST

AN

CE

TJ, JUNCTION TEMPERATURE (oC)

0

5

10

15

20

TJ = 125 oC

ID = 25 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS

(on

),D

RA

IN T

O

SO

UR

CE

ON−R

ES

IST

AN

CE

(mW

) PULSE DURATION = 80msDUTY CYCLE = 0.5% MAX

0

20

40

60

80

100

120

TJ = 125 oC

VDS = 5 V

PULSE DURATION = 80msDUTY CYCLE = 0.5% MAX

TJ = −55oC

TJ = 25 oC

I D, D

RA

IN C

UR

RE

NT

(A

)

VGS, GATE TO SOURCE VOLTAGE (V)0.0 0.2 0.4 0.6 0.8 1.0

0.001

0.01

0.1

1

10

100200

TJ = −55oC

TJ = 25 oC

TJ = 125 oC

VGS = 0 V

I S, R

EV

ER

SE

DR

AIN

CU

RR

EN

T (

A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

2 3 4 5 6 7 8 9 10

1.0 1.5 2.0 2.5 3.0 3.5

Figure 14. On−Region Characteristics Figure 15. Normalized on−Resistance vs. DrainCurrent and Gate Voltage

Figure 16. Normalized On−Resistance vs. JunctionTemperature

Figure 17. On−Resistance vs. Gate to SourceVoltage

Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward Voltagevs. Source Current

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TYPICAL CHARACTERISTICS (Q2 N-Channel)(TJ = 25°C unless otherwise noted)

0 10 20 30 40 500

2

4

6

8

10ID = 25 A

VDD = 20 V

VDD = 15 V

VG

S, G

AT

E T

O S

OU

RC

E V

OL

TA

GE

(V

)

Qg, GATE CHARGE (nC)

VDD = 10 V

0.1 1 10 3010

100

1000

10000

f = 1 MHz

VGS = 0 V

CA

PA

CIT

AN

CE

(p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

1

10

100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS, A

VA

LA

NC

HE

CU

RR

EN

T (

A)

25 50 75 100 125 1500

20

40

60

80

100

VGS = 4.5 V

RqJC = 4.9 oC/W

VGS = 10 V

I D,D

RA

IN C

UR

RE

NT

(A

)

TC, CASE TEMPERATURE (oC)

0.1 1 10 1000.1

1

10

100

1000

10 �s

CURVE BENT TO

MEASURED DATA

100 �s

10 ms

DC

1 ms

I D, D

RA

IN C

UR

RE

NT

(A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA ISLIMITED BY r DS(on)

SINGLE PULSE

TJ = MAX RATED

RqJC = 4.9 oC/W

TC = 25oC

10−5 10−4 10−3 10−2 10−1 110

100

1000

10000

SINGLE PULSE

RqJC = 4.9oC/W

TC = 25oC

P( P

K),

PE

AK

TR

AN

SIE

NT

PO

WE

R (

W)

t, PULSE WIDTH (sec)

0.001 0.01 0.1 1 10 100

Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to SourceVoltage

Figure 22. Unclamped Inductive SwitchingCapability

Figure 23. Maximum Continuous Drain Currentvs. Case Temperature

Figure 24. Forward Bias Safe Operating Area Figure 25. Single Pulse Maximum PowerDissipation

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TYPICAL CHARACTERISTICS (Q2 N-Channel)(TJ = 25°C unless otherwise noted)

10−5 10−4 10−3 10−2 10−1 10.001

0.01

0.1

1

2

SINGLE PULSE

DUTY CYCLE−DESCENDING ORDER

r(t)

, NO

RM

AL

IZE

D E

FF

EC

TIV

E T

RA

NS

IEN

TT

HE

RM

AL

RE

SIS

TA

NC

E

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

PDM

t1t2

NOTES:

ZqJC(t) = r(t) x RqJC

RqJC = 4.9 oC/W

Duty Cycle, D = t1 / t2

Peak TJ = PDM x ZqJC(t) + TC

Figure 26. Junction−to−Case Transient Thermal Response Curve

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TYPICAL CHARACTERISTICS (continued)

SyncFET Schottky Body Diode CharacteristicsON’s SyncFET process embeds a Schottky diode in

parallel with PowerTrench MOSFET. This diode exhibitssimilar characteristics to a discrete external Schottky diodein parallel with a MOSFET. Figure 27 shows the reverserecovery characteristic of the FDPC5030SG.

Schottky barrier diodes exhibit significant leakage at hightemperature and high reverse voltage. This will increase thepower in the device.

0 100 200 300 400 500−5

0

5

10

15

20

25

30

di/dt = 230 A/ms

CU

RR

EN

T (A

)

TIME (ns)0 5 10 15 20 25 30

10−6

10−5

10−4

10−3

10−2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

I DS

S, R

EV

ER

SE

LE

AK

AG

E C

UR

RE

NT

(A

)

VDS, REVERSE VOLTAGE (V)

Figure 27. FDPC5030SG SyncFET� Body DiodeReverse Recovery Characteristics

Figure 28. SyncFET� Body Diode ReverseLeakage vs. Drain−Source Voltage

POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.

PQFN8 5x6, 1.27PCASE 483AR

ISSUE ADATE 21 MAY 2021

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

98AON13666GDOCUMENT NUMBER:

DESCRIPTION:

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