www.fairchildsemi.com

Fairchild Solution for PDP application

Feb, 2007

Visual System TeamHigh Voltage Functional Power Solutions

2

Discrete Solution

3

Component Trend in PDP Market

AS for main blocks ( Sustain and Energy Recovery )

- “M” com. / “L” com. / “S” com. : IGBT

- “F” com. / “O” com. : MOSFET ( IGBT on new concept )

Vs

Q6

Q12

Q1

Q5

PANEL

Q15

Q4

Q2Q13

Q11Scan ICQ3

Vs Vset

Q14

Q9

Q7

Q10

Ver

VbVscan

Q8

C2

SustainSustain

Energy RecoveryEnergy Recovery

Pass Switch

Y-Board X(Z)-BoardHVICHVIC

Reset

ClampClamp

Vsus Trend “ F ” com. “ M “ com. “ L “ com. “ O “ com. “ S “ com.

Current 180 ~ 190V 190 ~ 200V 180 ~ 190V 180 ~ 190V 180 ~ 190V

New No Plan No Plan TBD No Plan Up to 220V

Fairchild Solution

300V PDP IGBT 300V / 450V PDP IGBT

300V PDP IGBT 300V PDP IGBT 350V PDP IGBT

4

Fairchild IGBT

IGBT Products IGBT Products

Std. Discrete

- 600/900/1500V UF Series - 600V RUF B,C-speed - 600V B,C-speed (GEN3) - 300 / 600V SMPS IGBT ( A-speed) - 1200V NPT P/TIGBT FGA series ( NPTA) B,C-speed ( NPT1,MTP ) - 600V NPT IGBT - 600V Field Stop IGBT

Specific

- 300V / 300V Planar - 300V TIGBT - 400V Planar - 450V TIGBT - 600V Planar - 600V NPT IGBT - 900V PT/NPT TIGBT - 900V NPT Field Stop IGBT - 1000V PT/NPT TIGBT - 1200V NPT P/TIGBT - 1200V NPT Field Stop IGBT - 1500 / 1700V SDB

Module

- 1PAK - 2PAK - Complex

SPM

- SPM - SPIM - TPIM - CPM

• 600V, 1200V > 2A ~ 160A

• Camera (400V TIGBT)• IH Jar / Cooker ( 600/1200V )• MWO ( 600/1200V)• PDP ( 300 ~ 450V )

Major Device Major Device Major Device Major Device

• 600V, 1200V > 5A ~ 400A

• 600V series >10A ~ 30A• 1200V series* > 6A

5

PDP IGBT

• 450V Trench IGBTs for Japan PDP market

• 300V Trench IGBTs for next model in KOREA PDP market

• 300V Planar IGBTs for parallel operation in KOREA and Japan PDP market

• 600V Field Stop IGBTs for single board concept in KOREA PDP market

CY06CY05

PDP IGBT

CY08Device

300V 90/120/150/180A(PT,Planar)

300V 30/ 50/ 70/ 90/ 120/ 180 / 240A

(PT,Trench)

CY07

450V 30/45/60A

(PT,Trench)

500 ~ 600V [TBD]

(Field Stop, Planar)

300V 30 / 70A

(PT,Planar)

Proliferation

Proliferation

CY09

Proliferation

Vce,sat ~ 1.9 V@peak,

tf~ <200nsec, 30% shrink from Planar

Vce,sat ~ 2.0 V@peak,

tf~ <200nsec

300V 2nd Generation

(PT,Trench) Proliferation

35% shrink

500 ~ 600V [TBD]

(Field Stop, Trench)

6

Specification for PDP IGBT

Part # Tech. Bvces Vce(sat) , DC level Icp (Pulse Current ) Package Type Working Sample Release Target Application FG30N30PWD Planar 300V 1.8V(typ.) @30A 80A Pellet now Released ERFG70N30PWD Planar 300V 1.8V(typ.) @70A 170A Pellet now Released SUS / ERFG90N30PWD Planar 300V 1.9V(typ.) @90A 220A Pellet now Released SUS / ERFG120N30PWD Planar 300V 1.9V(typ.) @120A 300A Pellet now Released SUS / ERFG150N30PWD Planar 300V 1.9V(typ.) @150A 380A Pellet now Released SUS / ERFG180N30PWD Planar 300V 1.9V(typ.) @180A 450A Pellet now Released SustainFG30N30TPWD Trench 300V 1.8V(typ.) @30A 80A Pellet P3 CY07 P6 CY07 ERFG70N30TPWD Trench 300V 1.8V(typ.) @70A 170A Pellet P3 CY07 P6 CY07 SUS / ERFG90N30TPWD Trench 300V 1.9V(typ.) @90A 220A Pellet P3 CY07 P6 CY07 SUS / ERFG120N30TPWD Trench 300V 1.9V(typ.) @120A 300A Pellet P3 CY07 P6 CY07 SUS / ERFG180N30TPWD Trench 300V 1.9V(typ.) @180A 450A Pellet now Released SustainFG240N30TPWD Trench 300V 1.8V(typ.) @240A 600A Pellet now P2 CY07 SustainFGPF30N30 Planar 300V 1.8V(typ.) @30A 80A TO- 220F now Released ERFGPF70N30 Planar 300V 1.8V(typ.) @70A 170A TO- 220F now Released SUS / ERFGP90N30 Planar 300V 1.9V(typ.) @90A 220A TO- 220 now Released SUS / ERFGPF90N30 Planar 300V 1.9V(typ.) @90A 220A TO- 220F now Released SUS / ERFGA90N30 Planar 300V 1.9V(typ.) @90A 220A TO3P now Released SUS / ERFGA90N30D Planar 300V 1.9V(typ.) @90A 220A TO3P CoPak now Released SUS / ERFGPF30N30T Trench 300V 1.8V(typ.) @30A 80A TO- 220F P5 CY07 P7 CY07 SUS / ERFGPF120N30 Planar 300V 1.9V(typ.) @120A 300A TO- 220F now Released SUS / ERFGA120N30D Planar 300V 1.9V(typ.) @120A 300A TO3P CoPak now Released SUS / ERFGPF70N30T Trench 300V 1.8V(typ.) @70A 170A TO- 220F P5 CY07 P7 CY07 SUS / ERFGA180N30D Planar 300V 1.9V(typ.) @180A 450A TO3P CoPak now Released SustainFGPF30N45T Trench 450V 1.8V(typ.) @30A TBD Pellet / PKG P3 CY07 P6 CY07 SUS / ERFGPF45N45T Trench 450V 1.8V(typ.) @45A TBD Pellet / PKG P6 CY07 P9 CY07 SUS / ERFGPF60N45T Trench 450V 1.8V(typ.) @60A TBD Pellet / PKG P6 CY07 P9 CY07 SUS / ER

* Icp condition : @pulse=100us, D=0.2

Products in mass production are on red

7

0 3 6 9 12 150

50

100

150

200

250

300

350

400

450

500

550

Ic [A

]

Vce(sat) [V]

Vge=15V 90N30 "R" Triple "R" Single 120N30 30N30 Triple 30N30 70N30

0 3 6 9 12 150

20

40

60

80

100

120

140

160

180

200

220

240

260

Ic [A

]

Vce(sat) [V]

Vge=10V 90N30 "R" Triple "R" Single 120N30 30N30 Triple 30N30 Single 70N30

static Latch (“R” maker)

Vge = 10V Vge = 15V

R3xx3 * 3

120N30 * 1

90N30 * 1

R3xx3 *1

120N30 * 1

R3xx3 * 3

90N30 * 1

R3xx3 *1

30N30 * 3

70N30 * 1

30N30 * 1

30N30 * 3

70N30 * 1

30N30 * 1

IGBT Competitiveness- 300V/30A PDP IGBT-

FGPF30N30 R3XX3

Qge=5.04 [nC] / Qgc=15.96 [nC]

Qg=36.96 [nC]

Qge=4.2 [nC] / Qgc=7.72[nC]

Qg=24.69[nC]

8

MOSFET

PDP MOSFET

CY06CY05 CY08Device

250V 42.5mohm (Trench), D2PAK

150/ 200/250/280/300350/ 500/ 650V (Planar,UniFET)

150 /200/250/300V (SupreMOS)

CY07

Proliferation

Proliferation

200V 27mohm (Trench), D2PAK Proliferation

Proliferation

CY09

150 /200/250/300V (SupreMOS, Trench)

9

Specification for PDP MOSFET

Part # Tech. BVdss Rds(on) Qg(total) Package Type Working Sample Release Target Application FDB66N15 Planar 150V 36mΩ (max) 49nC (typ) D2PAK now Released EraserFDP79N15 Planar 150V 30mΩ (max) 56nC (typ) TO220 now Released EraserFDPF79N15 Planar 150V 30mΩ (max) 56nC (typ) TO- 220F now Released EraserFDP61N20 Planar 200V 41mΩ (max) 58nC (typ) TO220 now Released Path / ScanFDB2614 Trench 200V 27mΩ (max) 87nC (typ) D2PAK now Released Path / ScanFDB52N20 Planar 200V 49mΩ (max) 49nC (typ) D2PAK now Released Path / ScanFDPF39N20 Planar 200V 66mΩ (max) 38nC (typ) TO- 220F now Released Path / ScanFQD16N25C Planar 250V 270mΩ (max) 41nC (typ) DPAK now Released Path / ScanFDB44N25 Planar 250V 69mΩ (max) 47nC (typ) D2PAK now Released Path / ScanFDPF44N25 Planar 250V 69mΩ (max) 47nC (typ) TO-220F now Released Path / ScanFDA59N25 Planar 250V 49mΩ (max) 63nC (typ) TO3P now Released Path / ScanFDB33N25 Planar 250V 94mΩ (max) 37nC (typ) D2PAK now Released Path / ScanFDB2710 Trench 250V 42.5mΩ (max) 84nC (typ) D2PAK now Released Path / ScanFDA69N25 Planar 250V 41mΩ (max) 77nC (typ) TO3P now Released Path / ScanFDAF69N25 Planar 250V 41mΩ (max) 77nC (typ) TO3PF now Released Path / ScanFDA2712 Trench 250V 33mΩ (max) TBD TO3P P2 CY07 P4 CY07 Path / Scan

FDPF51N25 Planar 250V 60mΩ (max) 55nC (typ) TO- 220F now Released Path / ScanFDA62N28 Planar 280V 51mΩ (max) 77nC (typ) TO3P now Released PathFDAF62N28 Planar 280V 51mΩ (max) 77nC (typ) TO3PF now Released PathFDA75N28 Planar 280V 40mΩ (max) TBD TO3P now Released PathFDAF75N28 Planar 280V 40mΩ (max) TBD TO3PF now Released PathFDB28N30 Planar 300V 129mΩ (max) TBD D2PAK TBD TBD The othersFDA59N30 Planar 300V 56mΩ (max) 77nC (typ) TO3P now Released The othersFDAF59N30 Planar 300V 56mΩ (max) 77nC (typ) TO3PF now P11 CY06 The othersFDB14N30 Planar 300V 290mΩ (max) 20nC (typ) D2PAK P1 CY07 P2 CY07 The othersFDPF14N30 Planar 300V 290mΩ (max) 20nC (typ) D2PAK P1 CY07 P2 CY07 The othersFQB11N40C Planar 400V 530mΩ (max) 28nC (typ) D2PAK now Released The othersFDA20N50 Planar 500V 230mΩ (max) 46nC (typ) TO3P now Released ResetFDA18N50 Planar 500V 265mΩ (max) 45nC (typ) TO3P now Released ResetFQA7N65C Planar 650V 1400mΩ (max) 28nC (typ) TO3P now Released Reset

Products in mass production are on red

10

Gate Charge (Vd=125V,Id=50A) R-Load S/W (125V/50A, Rg=25Ω) Rds(on) (Vgs=10V,Id=25A)

Qgs Qgd Qg td(on) tr td(off) tf Rds(on),typ A*Rds(on)

FDB2710 28.9 nC 18.1 nC 68.2 nC 88 ns 376 ns 108 ns 244 ns 35.4 mΩ 8.1

“I “ com. 28.2 nC 28.2 nC 79.3 nC 70 ns 430 ns 66 ns 288 ns 36.4 mΩ 10.6

“I” com

FDB2710

0

50

100

150

200

0 10 20 30 40 50

Vds [V]

Id [

A]

FDB2710

IXYS 76N25

Gate Charge

S/W turn-on

S/W turn-off

Vsd-Id

Vds

Vgs

Vds

Vgs

FDB2710

FDB2710

MOSFET Competitiveness- 250V PDP MOSFET -

“I” com

11

Fairchild Diode

UltraFast

HyperFast

Stealth

Damper

Schottky

600VVf : 2.4VTrr : 22 ~ 45ns1200VVf :3.3VTrr : 44 ~ 70ns

600VVf : 2.1VTrr : 35 ~ 45ns1200VVf :3.2VTrr : 70 ~ 75ns

200VVf : 1.2VTrr : 30 ~ 40ns300 / 400 / 450V Vf : 1.4VTrr : 45 ~ 50ns600VVf : 2.3VTrr : 80 ~ 90ns1200VVf :3.5VTrr : 100 ~ 120ns

1500VVf : 1.5 ~ 2.4Tff : 120 ~ 170ns

35V ~ 100VVf : 0.55 ~ 0.95V

Diode ProductsDiode Products

- Dual common anode type

- Dual common cathode type - Dual series type

- Single type

12

PDP Diode

• 400V UltraFast Diode for KOREA PDP market

• 500V UltraFast Diode for Japan PDP market

• Cost effective version of UltraFast Diode (UltraFast II )

CY08CY06CY05

Diode

CY08Device

10/ 20/ 30/ 40/ 60A300V

(UltraFast)

6/ 10/ 12/ 20/ 30/ 40/ 60A200V

(UltraFast)

10 / 20 / 30 / 60A400V

(UltraFast)

CY07

Proliferation

Proliferation

10/20/30/40/60A300V / 400V / 500V

(UltraFast II) Proliferation

10/ 20/ 30/ 40A500V

(UltraFast)

Proliferation

CY09

13

Specification for PDP Diode

Part # BV Vf Trr Package Type Working Sample Release TargetFFA30UP20DN 200V 1.15V(max) @ 15A 45ns (max) TO3P ( 2 Chip ) now ReleasedFFA40UP20DN 200V 1.15V(max) @ 20A 45ns (max) TO3P ( 2 Chip ) now ReleasedFFAF40UP20DN 200V 1.15V(max) @ 20A 45ns (max) TO3PF ( 2 Chip ) now ReleasedFFA60UP20DN 200V 1.15V(max) @ 30A 50ns (max) TO3P ( 2 Chip ) now ReleasedFFB10UP20S 200V 1.15V(max) @ 10A 45ns (max) D2PAK now ReleasedFFB20UP20S 200V 1.15V(max) @ 20A 45ns (max) D2PAK now ReleasedFFP12UP20DN 200V 1.15V(max) @ 6A 35ns (max) TO220 ( 2 Chip ) now ReleasedFFP20UP20DN 200V 1.15V(max) @ 10A 45ns (max) TO220 ( 2 Chip ) now ReleasedFFP30UP20DN 200V 1.15V(max) @ 15A 45ns (max) TO220 ( 2 Chip ) now ReleasedFFPF06UP20S 200V 1.15V(max) @ 6A 35ns (max) TO220F now ReleasedFFPF10UP20S 200V 1.15V(max) @ 10A 45ns (max) TO220F now ReleasedFFPF12UP20DN 200V 1.15V(max) @ 6A 35ns (max) TO220F ( 2 Chip ) now ReleasedFFPF12UP20DP 200V 1.15V(max) @ 6A 35ns (max) TO220F ( 2 Chip ) now ReleasedFFPF15UP20S 200V 1.15V(max) @ 15A 45ns (max) TO220F now ReleasedFFPF20UP20DN 200V 1.15V(max) @ 10A 45ns (max) TO220F ( 2 Chip ) now ReleasedFFPF20UP20DP 200V 1.15V(max) @ 10A 45ns (max) TO220F ( 2 Chip ) now ReleasedFFPF20UP20S 200V 1.15V(max) @ 20A 45ns (max) TO220F now ReleasedFFPF30UP20DN 200V 1.15V(max) @ 15A 45ns (max) TO220F ( 2 Chip ) now ReleasedFFPF30UP20DP 200V 1.15V(max) @ 15A 45ns (max) TO220F ( 2 Chip ) now ReleasedFFPF30UP20S 200V 1.15V(max) @ 30A 50ns (max) TO220F now ReleasedFFA60UP30DN 300V 1.5V(max) @ 30A 55ns (max) TO3P ( 2 Chip ) now ReleasedFF10UP30APWD 300V 1.3V(max) @ 10A 45ns (max) Pellet / PKG now ReleasedFF30UP30APWD 300V 1.4V(max) @ 30A 50ns (max) Pellet / PKG now ReleasedFFB20UP30DN 300V 1.3V(max) @ 10A 45ns (max) D2PAK ( 2 Chip ) now Released

FFPF40UP30SYDTU 300V 1.6V(max) @ 40A 55ns (max) TO220F ( Forming ) now ReleasedFFPF10UP30S 300V 1.4V(max) @ 10A 45ns (max) TO220F now Released

FFPF20UP30DN 300V 1.4V(max) @ 10A 45ns (max) TO220F ( 2 Chip ) now ReleasedFFPF20UP40DN 400V 1.4V(max) @ 10A 35ns (max) TO220F P2 CY07 P3 CY07FFPF20UP50DN 500V 1.4V(max) @ 10A TBD TO220F ( 2 Chip ) P5 CY07 TBD

Products in mass production are on red

14

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.50.01

0.1

1

10

100

Forw

ard

Cur

rent

[A]

Forward Voltage [V]

"R" com "S-1" com "N" com "S" com Fairchild

Diode Competitiveness- 300V/10A Ultrafast Rectifier -

Irr [A] Trr [ns] Qrr [nC]Fairchild 1.66 23.09 19.16"S" com 2.80 35.27 49.38"N" com 1.55 29.09 22.54"R" com 1.52 24.72 18.79

"S-1" com 1.99 24.18 24.06

IF=10A, di/dt=200A/us, Vcc=195V

“S” com

Fairchild

“N” com

“S-1” comFairchild

“R” com• Features

^ Low Forward Voltage & High Ruggedness

^ High Speed Switching ( Low Stored Charge, Qrr & Soft Recovery )