EXPERIMENTAL DETAILS

1FIG. 1. Color online Schematic structure InGaN/GaN multiple quantumwell LEDs with varied well thicknesses

veeco metal–organic chemical vapor deposition system

Chip size 350*350µ MQW growth time are 1.5 nm

(1 min), 2.0 nm (1.33 min), and 2.5 nm (1.67 min), respectively

mounted onto TO-46 lead frames without epoxy encapsulation

pulse duration 3 ms and duty cycle 5% by Keithley 2400 source meter.

RESULTS AND DISCUSSION

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Fig. 1. Normalized EQE measurements of the MQW LEDs with varied well thicknesses. A reduced efficiency droop behavior is demonstrated for the samples with thicker quantum wells. The inset shows absolute values of the external quantum efficiencies for the samples.

43.8%

26.3%

2.9%

Fig. 2. Schematic figure of total current density Jtotal = Jrad + Jnrad +Joverflow .

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R

Utilizing a commercial software—simulator of light emitters based on nitride semiconductors(SiLENSe)—is performed.