EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm...

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EUV MASK MANUFACTURING: PATTERNING AND BLANK STATUS BRYAN S. KASPROWICZ, HENRY KAMBERIAN PHOTRONICS, INC.

Transcript of EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm...

Page 1: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV MASK MANUFACTURING:

PATTERNING AND BLANK STATUS

BRYAN S. KASPROWICZ, HENRY KAMBERIAN

PHOTRONICS, INC.

Page 2: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

OUTLINE

Patterning Challenges

• Target Requirements

• Mask Manufacturing Modules

• Resist Process Selection and Results

Imaging Considerations

• EUV Reflectivity

• Black Border

EUV Blanks

• Evolution and Cost

Summary

Page 3: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

Tightening Mask Process Targets

16P32 (1x)

64P128 (4X)

11P26 (1x)

44P104 (4X)

Mask Attribute Targets

CD (nm) 64 44

SRAF (nm) ~ 40 ~ 25

CD MTT (nm) 3.0 2.0

Global CD Uniformity (nm) 2.5 1.5

Linearity Target (MFS to 500nm) ≤ 3

Proximity Target (1:1 to Iso; nm) ≤ 1.5

LER Target (3; nm) ≤ 2.5

Absorber SWA () 85 - 90°

PATTERNING CHALLENGES

Page 4: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

Module 10nm 7nm 5nm

Blank Materials• Defectivity

• Absorber material & stack optimization

Blank Inspection• Surfaces and backside

• Native defect mitigation

Mask Patterning• Resist materials and Etch

• Resolution

• CD control

Cleaning

• Absorber etch rate

• Surface conditions

• Backside Cleaning

• Cleaning efficiency

• Pattern damage

• EUV Reflectivity (ML, Cap, Absorber)

Metrology• Pattern Placement

• CD, LER and SWA

• EUV Reflectivity

Inspection• DUV and ebeam

• Inspection algorithms

• Defect capture rate

Repair• Mechanical, Ebeam, Ion beam

• Repair accuracy

Defect Review• Defect Repair Verification

• Disposition process flow

• Printability (wafer print, simulation)

EUV MASK MANUFACTURING MODULES

Page 5: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV MASK PATTERNING:

PCAR PROCESS RESULTS

Page 6: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

RESOLUTION, LINEARITY AND LER – PCAR

60nm Isolated Line 46nm Isolated Space60nm Dense Line

Page 7: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

RESOLUTION, LINEARITY AND LER – PCAR

64nm L/S

48nm L/S52nm L/S56nm L/S60nm L/S

L/S 60nm 56nm 52nm 48nm

CD Mean (nm) 56.5 51.8 47.4 42.3

CD MTT (nm) -3.53 -4.16 -4.64 -5.69

Page 8: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

CD–Space (nm) 69

Count 861

Axis X

Mean 70.25

MTT 1.25

CDU (3) 3.01

Mean 3 LER 3.31

LER Variation (3) 1.74

N7 LOGIC DESIGN - PCAR

69nm

CD–Space (nm) 113

Count 861

Axis X

Mean 111.29

MTT -1.71

CDU (3) 2.91

Mean 3 LER 2.99

LER Variation (3) 1.61

113nm

CD–Space (nm) 75

861

Axis Y

Mean 78.14

MTT 3.14

CDU (3) 2.95

75nm

Count

Page 9: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV MASK PATTERNING:

NCAR PROCESS RESULTS

Page 10: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

RESOLUTION, LINEARITY AND LER – NCAR

46nm Isolated Line 58nm Isolated Space46nm Dense Line

Page 11: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

RESOLUTION, LINEARITY AND LER - NCAR

Isolated Line(D/A):

34nm/38.6nm

Dense Line(D/A):

40nm/41.4nmIsolated Space (D/A):

46nm/41.6nm

Page 12: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

44nm L/S48nm L/S52nm L/S56nm L/S

Feature 64nm

CD Mean (nm) 64.39

CD MTT (nm) 0.39

CDU (nm, 3) 2.93

LER (3, nm CD-SEM) 2.52

64nm L/S

Feature 60nm 56nm 52nm 48nm 44nm

CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

CD MTT (nm) 0.07 -0.19 0.07 0.33 -0.40

CDU (nm, 3) 3.12 3.54 4.03 4.75 5.19

LER (3, nm CD-SEM) 2.58 2.57 2.61 2.75 3.05

ADVANCED TEST MASK - NCAR

70nm Abs

70nm Abs

Page 13: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

IMAGING CONSIDERATIONS:

EUV REFLECTIVITY

Page 14: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV REFLECTIVITY

13 Product Masks

ML Reflectivity:

Avg13 masks = 62.85%

RangeAvg = 0.55

AB Reflectivity:

Avg13 masks = 0.59%

RangeAvg = 0.011

ML Reflectivity Specifications:

Mean peak reflectivity: ≥ 62%

Max. range of peak reflectivity: < 1.4%

Mean = 63.5%

3 = 0.53

Single mask, 400 locations

Page 15: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

IMAGING CONSIDERATIONS:

BLACK-BORDER PROCESS

Page 16: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

BLACK BORDER AND EUV DUV

OOB REQUIREMENTS

Attribute Specification

Placement tolerance ± 100 nm

Width Uniformity (3) 200 nm

Side wall angle (SWA) 90° ± 5°

Out of Band Reflectivity (OOB R) Avg.

ʎ 100 - 280nm (steps of 5 nm)

≤ 2.0%

Out of Band Reflectivity (OOB R) Max.

ʎ 100-280nm (steps of 5 nm)≤ 10.0%

Out of Band Reflectivity (OOB R) avg.

ʎ 100-200nm (steps of 5 nm)

≤ 3.0%

EUV Reflectivity ʎ12.8-14.2nm (EUV R) max. ≤ 0.05%

AFM Profile

Sidewall angle: 88°

Page 17: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

REGISTRATION – PRE – BB

Page 18: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

REGISTRATION – POST – BB

Page 19: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV PROCESS CAPABILITY – BB BORDER

VUV/DUV OoB Reflectivity Suppression Methodology

• Developed a new BB process

• Simulation shows methodology works and would meet requirements

Optical Reflectivity LTEM - Actual

Measurement results with VUV/DUV Reflectometer, with backside CrN

BB process without any reflectivity suppression

Optical Reflectivity LTEM - Simulation

Optical reflectivity from LTEM only; There is no impact to reflectivity in 190-280nm

range with/without backside CrN

In 280-300nm range, reflectivity mostly affected by CrN film

Interpolation

Page 20: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

BLANKS:

EVOLUTION AND COST

Page 21: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV BLANK COMPOSITION –

CURRENT MATERIALS

Conductive Layer: CrN (20nm or 360nm)

ML: Mo/Si

Substrate: LTEM

AR layer: Ta-based (2nm - 14nm)

Main layer: Ta-based (51nm - 76nm)

Ru Capping layer

Source: T. Onoue (2015 BACUS)

Source: T. Last (ASML)

Thinner Absorber stack driven by:

Resolution requirements on mask

Mitigation of Mask 3D effects

Besides defectivity (ML, Abs, etc.) other blank properties are

tightened which impact overall blank costs…

Substrate flatness and Bow

Absorber thickness control and uniformity

Centroid wavelength control and uniformity

Backside defectivity

Page 22: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

EUV BLANK COMPOSITION – CURRENT MATERIALS

Absorber Thickness Control ± 1.9%

ML Defectivity: 0.010 def/mm² @ 70nm

Absorber Thickness Control ± 1.5%

ML Defectivity: 0.006 def/mm² (87 counts) @ 70nm

Backside CrN coating quality area: 142mm x 142mm

Backside CrN coating Defectivity: 50 counts @ ≥ 3.0µm

Backside CrN coating Defectivity: Zero counts @ ≥ 10.0µm

ML Defectivity: 0.0005 def/mm² (9 counts) @ 60nm

Median/Uniformity: 13.53 ± 0.014nm; ≤ 0.04nm

Absorber Thickness Control ± 1.0%

Median/Uniformity: 13.53 ± 0.05nm; ≤ 0.05nm

ML Defectivity: 0.003 def/mm² (52 counts) @ 70nm

Backside CrN coating quality area: 146mm x 146mm

Defectivity: 50 counts @ ≥ 3.0µm

Backside CrN coating quality area: > 146mm x 146mm & < 151mm x 151mm

Backside CrN coating Defectivity: Zero counts @ ≥ 10.0µm

Flatness BOW: ≤ 600nm

Page 23: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

SUMMARY

EUV Mask Requirements

• Mask Pattern specifications are getting more challenging, but perhaps achievable with current infrastructure

• SRAF’s are driving resolution

Mask Patterning Requirements

• Dual resist strategy to manage multiple mask layer types • NCAR process performance has improved resolution and LER performance, but at the expense of write time

• EUV reflectivity requires monitoring and process stability

• Novel BB suppression process being demonstrated to help reduce VUV/DUV OoB reflectivity

EUV Blanks

• Defectivity is priority one, but….

• Cost is directly to evolution of material properties and specification targets.• Harmonization would help

Page 24: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

ACKNOWLEDGEMENT

Photronics Boise nanoFab Engineering Team

Jinju Beineke, Young Cho, David Cho, Peter Craig, Steve Grimmett, Lynn Harned, Shad

Hedges, David Jenkins, Austin Johnson, Chris Kossow, Susan MacDonald, Jeremy

McCord, Michael Main, David Mellenthin, Chuck Pollock, Craig Wood

Page 25: EUV Mask Manufacturing: Challenges and OpportunitiesCDU (nm, 3 ) 2.93 LER (3 , nm CD-SEM) 2.52 64nm L/S Feature 60nm 56nm 52nm 48nm 44nm CD Mean (nm) 60.07 55.81 52.07 48.33 43.60

THANK YOU FOR YOUR

ATTENTION!


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