Erratum to “Characterization of porous silicon-on-insulator films prepared by anodic oxidation”...

• ELSEVIER Thin SolidFilms 293 (1997) 334 Erratum Erratum to "Characterization of porous silicon-an-insulator films prepared by anodic oxidation" [Thin Solid Films, 276 (1996) 147-150] 1 C,H. Lee, C.C. Yeh, H.L. Hwang, Klaus Y.J. Hsu Semiconductor Technology and Applications Research Grol/p. Department of Electrical Engineering, National Tsing Hua University, Hslnchu, Taiwan In the Acknowledgements section of the above paper, the incorrect statement' 'Financial support from the National Science Council of the People's Republic of China is gratefully acknowledged" was published. This line should have read "Financial support from the National Science Council of the Republic of China is gratefully acknowledged". I SSDI of orlginall1tticle: 0040·6090(95 )08076.7 Elsevier Science S.A. PII 50040·6090 (96) 09574-0

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Transcript of Erratum to “Characterization of porous silicon-on-insulator films prepared by anodic oxidation”...

•ELSEVIER Thin SolidFilms293 (1997) 334

Erratum

Erratum to "Characterizationof porous silicon-an-insulator filmsprepared by anodic oxidation"

[Thin Solid Films, 276 (1996) 147-150] 1

C,H. Lee, C.C. Yeh, H.L. Hwang, Klaus Y.J. HsuSemiconductor Technology and Applications Research Grol/p. Department of Electrical Engineering, National Tsing Hua University, Hslnchu, Taiwan

In theAcknowledgements section of theabove paper, the incorrect statement' 'Financial supportfrom theNational ScienceCouncil of the People's Republic of China is gratefully acknowledged" was published. This lineshould have read "Financialsupport from the National Science Council of the Republic of China is gratefully acknowledged".

I SSDI of orlginall1tticle: 0040·6090(95 )08076.7

Elsevier Science S.A.PII50040·6090(96)09574-0