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Transcript of EPC - The Leader in eGaNTMTM FETs | October 2010 |...
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 1www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 1www.epc-co.com
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 2www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 2www.epc-co.com
The Journey
• Why Gallium Nitride?
• Breaking down the barriers
• What the future might hold
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 3www.epc-co.com 3
• GaN offers superior performance compared with both silicon and silicon carbide
– RDSON x Area
– Very high switching speed
– High Voltage Capability at low RDS(ON)
– Body Diode has no QRR
Why Gallium Nitride?
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 4www.epc-co.com 4
• Device-grade gallium nitride can be grown on top of silicon wafers and processed in standard CMOS facilities
• GaN-on-silicon offers the advantage of self-isolation and therefore efficient power devices can now be made monolithically
• EPC has developed proprietary technology for the first enhancement-mode devices (eGaNTM) to be offered on the market!
Why Gallium Nitride?
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 5www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 5www.epc-co.com
Device Construction
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 6www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 6www.epc-co.com
Flip Chip Assembly
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 7www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 7www.epc-co.com
Breaking Down the Barriers
Does it enable significant new capabilities?
Is it VERY cost effective to the user?
Is it reliable?
Is it easy to use?
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 8www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 8www.epc-co.com
Does it enable significant new capabilities?
Is it VERY cost effective to the user?
Is it reliable?
Is it easy to use?
Breaking Down the Barriers
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 9www.epc-co.com 9
eGaN FETs are Higher Performance:
Figure of Merit
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 10www.epc-co.com 10
• The Conduction Figure of Merit is the best predictor of relative device
performance when the transistor is used in a rectifier function
• The relative performance between eGaN and silicon is more
pronounced as the rated voltage increases
eGaN FETs are Higher Performance:Conduction Figure of Merit
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 11www.epc-co.com 11
• The Switching Figure of Merit is the best predictor of relative device
performance in hard switched converters
• The relative performance between eGaN and silicon is even greater
than for conduction FOM
eGaN FETs are Higher PerformanceSwitching Figure of Merit
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 12www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 12www.epc-co.com
Converter Efficiency
12V-1V
24V-1V
48V-1V
EPC1001 at 250 kHz
Reduction of light load efficiency and high conversion voltage efficiency
is mostly due to the limitations of the commercial driver IC
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 13www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 13www.epc-co.com
48V – 1V Conversion (1MHz)
10 ns per division
GaN switching speed is limited by the driver circuit
20 nS
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 14www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 14www.epc-co.com
Gigahertz Capability
9.9 GHz
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 15www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 15www.epc-co.com
Breaking Down the Barriers
Does it enable significant new capabilities?
Is it VERY cost effective to the user?
Is it reliable?
Is it easy to use?
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 16www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 16www.epc-co.com
The on-resistance
(RDS(ON)) for a given
device area is a key
determinant of
product cost.
The elimination of
the package further
reduces cost
Smaller Die Sizes
200V GaN Device
(25 milli Ohms)
200V Silicon Device
(30 milli Ohms)
eGaN FETs are cost effective
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 17www.epc-co.com
Starting Material
Epi Growth
Wafer Fab
Test
Assembly
OVERALL
2010 2015
same same
higher
same
same
lower
same
lower
same
lower
lowerhigher
17
eGaN Transistors are cost effective
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 18www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 18www.epc-co.com
Does it enable significant new capabilities?
Is it VERY cost effective to the user?
Is it reliable?
Is it easy to use?
Breaking Down the Barriers
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 19www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 19www.epc-co.com
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 500 1000 1500 2000 2500 3000
Igss
@5
V (
uA
)
Stress Hours
HTGB 6V at 125C EPC1001 Igss
Devices are well behaved after HTRB,
eGaN FETs are reliable
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 200 400 600 800 1000
No
rmal
ize
d R
dso
n
Stress Cycles
TC -40C/+125C EPC1012 Rdson
0
20
40
60
80
100
120
140
160
1 10 100 1000
Idss
@2
00
V (
uA
)
Stress Hours
THB 85C/85RH 100Vds EPC1010 Idss
0
20
40
60
80
100
120
140
0 500 1000 1500 2000 2500 3000
Idss
@20
0V (u
A)
Stress Hours
HTRB 150C EPC1010 Idss
and Temp Cycling Stress.HTGB, THB,
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 20www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 20www.epc-co.com
Power Supply Life Tests
48V-1V Converters show no change in efficiency after 1200 hours of operation
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 21www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 21www.epc-co.com
Does it enable significant new capabilities?
Is it VERY cost effective to the user?
Is it reliable?
Is it easy to use?
Breaking Down the Barriers
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 22www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 22www.epc-co.com
It’s just like a MOSFET
eGaN FETs are easy to use
except for TWO things
(1)
The high frequency capability makes circuits
using GaN transistors very sensitive to layout
(2)
GaN transistors are more sensitive to
gate rupture than power MOSFETs
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 23www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 23www.epc-co.com 23
eGaN Characteristics
Fully enhanced at 5V
No Negative
Temp Coef
region like
MOSFETs
R DS(ON) rise lower
than MOSFET for
similar temp rise.
VTH essentially FLAT
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 24www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 24www.epc-co.com
What the Future Holds
Driver On Board
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 25www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 25www.epc-co.com
What the Future Holds
Full-Bridge with Driver
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 26www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 26www.epc-co.com
Three Phase Monolithic Motor Drive
What the Future Holds
Hybrid POL
EPC - The Leader in eGaNTM FETs | October 2010 | EDS 27www.epc-co.comEPC - The Leader in eGaNTM FETs | October 2010 | EDS 27www.epc-co.com
• Many new applications are enabled due to
eGaN’s quantum leap in frequency capability
• After over one year on the market, eGaN has
started to replace MOSFETs in many high
performance applications
• Basic product reliability has been established
• The largest impediment to the rapid adoption of
eGaN is the need for a low-cost, high-
performance gate drive.
Conclusions