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![Page 1: Emerging high-performance and low-cost power packaging · PDF fileEmerging high-performance and low-cost power packaging solutions with nanoscale capacitors and inductors P. M. Raj,](https://reader031.fdocuments.us/reader031/viewer/2022030407/5a855b147f8b9a14748c0bea/html5/thumbnails/1.jpg)
Emerging high-performance and low-cost power packaging solutions with nanoscale capacitors and inductors
P. M. Raj, Himani Sharma, Vanessa Smet and Rao R. Tummala
3D Systems Packaging Research Center, Georgia Institute of Technology, Atlanta, USA
Matt Roming and Saumya Gandhi
+ - Texas Instruments, 13020 TI Blvd, Dallas, TX 75243
Naomi Lollis and Mitch Weaver
# A.V.X. Corporation, One AVX Blvd, Fountain Inn, SC 29644
Other Collaborators:
^ - H.C.Starck GmbH, Im Schleeke 78-91, 38642 Goslar/Germany
& Heraeus Inc., Leverkusen, Germany.
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Slide 2
CONFIDENTIAL
Summary
GT-PRC is innovating power packaging technologies with advanced components and 3D integration,
and also creating an industry ecosystem of material suppliers, component manufacturers and end-users:
Capacitors in consumer power modules:– Silicon-integrated nanoscale tantalum capacitors
High-temperature and high-voltage capacitors with:– Porous copper electrodes
– Nanoscale inorganic – organic hybrid dielectrics
Capacitors and inductors in integrated voltage regulators:– Low-cost polymer nanomagnetic inductors
– Panel-scale inductor and capacitor integration
Shielding:– Nanolayered structures for performance beyond copper
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3 | Georgia Tech PRC Prof. Rao R. Tummala
Packaging R&D at GT-PRC
5G &mm-Wave
RF (WLAN & LTE)
Integrated Voltage
Regulator
2.5DGlass
Interposer
Radar, Camera
with GFO
High-power &
Reliability
High-tempMaterial &Reliability
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Slide 4
CONFIDENTIAL
Why Collaborate With Georgia Tech PRC
No. 1 Academic Leader in IC & Systems Packaging
Technical Vision Consistent with Market Needs
Co-development of Panel-based Glass Packaging with 50 Global Researchers, Developers, Manufacturers and users
Explore and Develop Advanced Systems Packaging Technologies Beyond Industry’s 3-year Horizon
Seamless from R&D, Prototype, and Tech Transfer Enabling Commercialization
Track Record of Technology Breakthroughs
Only 300mm Cleanroom Panel Facility in the Academic World
> 50 Person Co-development Team: Full-time Researchers, Manufacturing Industry Partners, Graduate Engineers, Faculty and On-campus Industry Engineers
Leverage: $8M/100k
4
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5 | Georgia Tech PRC Prof. Rao R. Tummala
Global Industry Partners in Co-development
Tools UsersAssemblyMaterials Substrates
JAPANEUROPENORTH AMERICA
TAIWAN
ASIA
KOREA
CHINA
Assembly
Namics – Underfill
JCET – Bumping
QualiTau – Assembly
WALTS – Substrate
PacTech – Assembly
Materials
Schott – Glass
Corning – Glass
Dow Chemical – Polymers Asahi Glass – Glass
Ajinomoto – Dry Film
JSR – Low-loss Polymer
Nitto Denko – Magnetics
TOK – Photopolymer
HC Starck – Capacitors
Taiyo Ink – Photopolymer
Panasonic – Low-loss Polymer
Substrates
Shinko – 2.5D
NGK/NTK – 2.5D Unimicron – 2.5D
Hitachi Metals – 2.5D
Tools
Asahi Glass – TPV
Disco – Dicing
Atotech – Plating
Suss – Laser Via
Xyztec – Assembly
Orbotech – Metrology
Coherent – Laser
Tango – PVD Tools
K&S – TCB Bonder
MKS – Plasma Etching
ESI – Laser
Rudolph – Lithography
SavanSys – Cost Model
Veeco – Cleaning
Advantech – Deposition
Users
TSMC – User
Gigalane – RF
TDK-Epcos – RF
Valeo – ADAS
Murata – RF
Qualcomm – 5G, Fan-out, RF
TE – Opto
Intel – Digital
AVX – Passives
TI – Passives
GlobalFoundries
AMD – 2.5D
Johnson Battery – User
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Slide 6
CONFIDENTIAL
Technology Trends and Drivers
Discrete Modules
EMBEDDED
ACTIVES
IC
C CL
C CIC
Component Density
In
terco
nn
ecti
on
Len
gth
ICCAPACITOR
INDUCTOR
EMBEDDED
ACTIVES AND
PASSIVES
EMBEDDED
ACTIVES AND
PASSIVES
C
L
• Short PDN path• Low impedance • Less voltage drop • Less voltage variation • Less de-caps• More efficiency
Higher bus voltage to suppress losses
Integrated power conversion with the load:
– Suppress I2 R losses
– Minimize the need for decoupling capacitors
Integration of storage elements – should not offset the benefits or interconnection losses
Better Power distribution network designs
PWB
LInductors
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Slide 7
CONFIDENTIAL
Large-Area Capacitor and Inductor Integration
Insulation layer
Insulation layerMagnetic FIlm
Magnetic film
Inductor layers at panel scale
Spiral inductor
Large panel LC integration process
Capacitor Layer at panel scale
• Both capacitors are inductors are made as large-area free-standing films• Can be pre-tested for yield and performance
• Laminated onto substrate or wafer• Or diced into IPDs and embedded or surface-assembled
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Slide 8
CONFIDENTIAL
Glass Panel Capacitor and Inductor IntegrationEmbedded power capacitor layer
Integrated Power Module with processor
C
L
C
Embedded power inductor layer
L
Glass
• Currently ongoing, in collaboration with component manufacturers and end-user companies
• Glass to support high-density fine-line wiring on large 510 x 510 panel manufacturing
Glass
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Slide 9
CONFIDENTIAL
Capacitors in Consumer Power Modules
Silicon-integrated nanoscale tantalum capacitors
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Capacitor Integration in Consumer Power Modules
ICCAPACITOR
INDUCTOR
IC
C CL
Discrete power module Integrated power module
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Slide 11
CONFIDENTIAL
Ta foil
Wafer Integration of Ta Film Capacitors
AnodeCathode
Anode Cathode
Component Manufacturer (Ex. AVX)
Semiconductor Wafer
Integrated capacitor on a chip
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Slide 12
CONFIDENTIAL
Wafer or substrate
Metal
• Thickness: 500 microns • Thickness: 75 microns
• 200 micron conducting path • 50 micron conducting path
• CP/Carbon/Silver paste• Molded in lead-frame • (extra pkg volume)
• Minimal interfaces;• Direct metallization of CP with Cu/Au• (Minimal packaging volume)
• 100 milliohms x microfarad • 20-50 milliohms x microfarad
• 1-5 MHz • >10 MHz
Bulky Ta Vs Ta Film Capacitors
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Slide 13
CONFIDENTIAL
Parameters Si deep trench Discrete MLCC
Foil Capacitors
Component thickness (µm) ~ 200-300 200 75
Capacitance (µF/mm2) 1 2-3 1
Frequency (MHz) - 150 1 - 150
Leakage current (µA/µF) 0.1 0.1 0.1
Competitiveness of GT capacitors
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Slide 14
CONFIDENTIAL
II. Lamination onto substrate
III. Planarization
I. Passivation
IV. Via drill
a. Desmearing
b. Electroless Cu seed layer
c. Photolithography
d. Electroplating
Capacitor foil
Capacitor Integration scheme
V. Metallization
Si or package substrateSi or package substrate
Si or package substrateSi or package substrate
Cu pads and interconnects
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Slide 15
CONFIDENTIAL
Demo. of Capacitor Integration
Anode Dielectric
CathodeComponent Integration on silicon
• Printed tantalum with low-temperature sintering
• Anodization for conformal oxide growth with controlled thickness
0
20
40
60
80
100
120
140
160
0 50 100
Die
lectr
ic T
hic
kness (
nm
)
Anodization Voltage (V)
• Thin-film design for high volumetric density and frequency stability
• Lamination onto silicon with short copper interconnections
100 µm
• Cathode dipping process for low ESR and high capacitance density
• Lift-off process for easy cathode patterning
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Slide 16
CONFIDENTIAL
Capacitor Reliability
65°C/95%RH for 1000 hours
• Capacitance response to frequency similar before
and after exposure to elevated temperatures and
moisture
• Improved ESR after testing
• Near-hermetic seal that removes need for casing
80 kA-8V200 nm passivation
1.19 µF/mm2
at 1 MHz
1.09 µF/mm2
at 1 MHz
1.15 µF/mm2
at 1 MHz1.34 µF/mm2
at 1 MHz
65°C/95%RH for 500 hours
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Slide 17
CONFIDENTIAL
Manufacturing Ecosystem for Silicon-Integrated Foil Capacitors
Ta foil
Anode Cathode
AnodeCathode
Component Manufacturer (Ex. AVX)
Wafer or substrate
IC
CAPACITOR
INDUCTOR
Power modules with passive-active integration
Texas Instruments
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Slide 18
CONFIDENTIAL
High-temperature and high-voltage capacitors with nanoscale hybrid dielectrics
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Slide 19
CONFIDENTIAL
High-Temperature and High-Voltage Capacitors
AMS’ metallized polymer film capacitors
EPCOS: MLCCs with PLZT11 microfarad/cc; 350 V
700 V; 625 A current;68 mm x 34 mm x 30 mm
Safron’s olymer film capacitors
Electrolytic capsVishay
Operating voltage
Capacitance Case-size (in mm)
400 V 120mFDiameter: f25 mm
Length: 30 mm
400 V 68mF Diameter: f20Length: 30 mm
400 V formed dielectric
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Slide 20
CONFIDENTIAL
20
Theoretical versus Achieved Volumetric Density for 450 V Applications
0.000
10.000
20.000
30.000
40.000
50.000
60.000
70.000
80.000
Polymer film Al Foil Cu with hybrid HV MLCC
(CZT)
HV MLCC
(PLZT)
Cap
acit
an
ce D
en
sit
y
(n
F/
mm
3o
r m
icrofa
rad
/cm
3)
PRC approach
Technology Gap(between current status and theoretically achievable)
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Slide 21
CONFIDENTIAL
Thin Planar HV and HT Capacitors
– Porous copper electrodes
– Inorganic-organic hybrid dielectric
o Permittivity of 20
o BDV of 300 V/micron
– Layering with high thermal conductivity adhesives
– High thermal-stability adhesives
– Vias and metallization
– Solder termination with through-vias
– 3D stacking for scaling up in capacitance
8-9 microfarad/cm3
450 V85-115 C
40 microfarad/cm3
450 V>175 C
Porous copper Electrode
Conformal counter electrode
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Slide 22
CONFIDENTIAL
Inorganic-Organic Hybrid Nanodielectrics(Conformally coated on porous copper electrodes)
• Temperature stability of 300°C
• Permittivity ~ 20 and high breakdown strength
• Extractable energy density of 40 J/cm3 before packaging
Joe Perry, GT
Hybrid inorganic-organic dielectric with high permittivity and BDV
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Slide 23
CONFIDENTIAL
Capacitors and Inductors in Integrated Voltage Regulators
Panel-scale integration
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Slide 24
CONFIDENTIAL
Air core SputteredThinfilm
Magnetic Composites
Sputteredfilms as glass
IPDs
L/RDC
(nH/mΩ)0.20 0.20 ~20 5-10
AC losses(% of total loss)
<1% <1% <1% <1%
Current handling(A/mm2)
>1 1-2 1-2 1-2
Competitiveness of GT Embedded Inductors
L
Inductors
IC ICL
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Slide 25
CONFIDENTIAL
Advanced Magnetic Substrates
Nitto Denko Corporation
Substrate
Polymer insulation Magnetic sheets
Copper winding
IC IC
v vv
Laminate substrate
Copper winding
Magnetic film
Magnetic film
25
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Nanomagnetic High-Sat, Soft Magnetic Core Material
• Material sample thickness = >40um
• High deposition rate – high throughput and low cost
• IC or glass substrate- compatible
• Deposition thickness capability up to 50um demonstrated
• μr= 200, Bsat= 1.3 T, Q @ 5 MHz>90, Q@ 20 MHz=30
• 0.5 microhenries; Isat of 2 Amp demonstrated on 6 inch;
• Toroid and solenoid inductors demonstrated
AIS Company Confidential 26
Rela
tive P
erm
eabili
tyUr’’
Ur’
Frequency (MHz)
Ur’’
Ur’
AIS Company Confidential
Cu Windings
Core Material
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Slide 27
CONFIDENTIAL
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35
Ind
uctan
ce (nH
)
Magnetic inductors
~10X enhancement in inductance
Inductors IPDs with Nanomagnetic Films on 50 microns glass
0
100
200
300
400
500
600
700
800
900
1000
1.E+07 1.E+08 1.E+09
Perm
eabi
lity
Frequency (Hz)
Real
Imag
Frequency (MHz)
Inductor: T=10um
Glass: T=100um
Oxide: T=0.1umNanomagnetic film
: T=0.2um
3 layers at the bottom
: 3 nanomagnetic films
& 3 Oxides
3 layers at the top
: 3 nanomagnetic films
& 3 Oxides
1 layer at the center
: 1 nanomagnetic film
: T=10 um
Potcor or racetrack inductors
Solenoid inductors
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Slide 28
CONFIDENTIAL
LC-Embedded Power Substrate
C
L
• Pre-manufactured capacitors fan-out embedded in organic laminate panels
• Magnetic components as large-area substrates
• Vertical through-via interconnections
• Ability to support redistribution layers on the top for routing
• Fine-pitch processor or other logic ICs on the topic
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Slide 29
CONFIDENTIAL
Parameter Objectives
Shielding 60 - 120 dB
Frequency 1 MHz – 40 GHz
Distance of
separation
0.1 – 10 mm
Shield
metal
thickness
~5-50 um
Component- and Package-Level Shielding
Field patterns for circular loop
Materials beyond copper are needed to shield magnetic fields
Component-level shielding:• Plated copper• Multilayered metallic
structures
External shielding:• Spray-coated, plated,
sputtered
Illustration borrowed from Murata
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Slide 30
CONFIDENTIAL
1 2 3 4 5 6 7 8
-70
-60
-50
-40
-30
-20
Iso
latio
n (
dB
)
Separation Distance (mm)
1 2 3 4 5 6 7 8
-80
-70
-60
-50
-40
Isola
tion (
dB
)
Separation Distance (mm)
NiFe+Ti
Cu(7)NiFe(3)
Cu(3)NiFe(7)Ti
NiFeCu
No shield
NiFe+Ti
Cu(7)NiFe(3) Cu(3)NiFe(7)Ti
NiFe
Cu
No shield
Better EMI isolation Over Cu with Cu-Magnetic structures
(a)
(b)
(a)
(b)
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Slide 31
CONFIDENTIAL
Summary
GT-PRC is innovating power packaging technologies and also creating an industry ecosystem of material suppliers, component manufacturers and end-users:
• Capacitors in consumer power modules:• Silicon-integrated nanoscale tantalum capacitors
• High-temperature and high-voltage capacitors with:• Porous copper electrodes• Nanoscale inorganic – organic hybrid dielectrics
• Inductors and capacitors in integrated voltage regulators:• Low-cost polymer nanocomposite inductors• Panel-scale inductor and capacitor integration
• Integrated shielding at component and package-level• Materials beyond copper