Spectroscopic ellipsometry and polarimetry for materials ...
Electrons and Phonons: Precision Measurements of Optical … › files › 2019 › 05 ›...
Transcript of Electrons and Phonons: Precision Measurements of Optical … › files › 2019 › 05 ›...
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Electrons and Phonons: Precision Measurements of Optical Constants with
Spectroscopic EllipsometryStefan Zollner
New Mexico State University, Las Cruces, NM, USAand Institute of Physics, CAS, Prague, CZR
NSF: DMR-1505172
http://ellipsometry.nmsu.edu [email protected]
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Spectroscopic Ellipsometry on Complex Oxides
• How Thick is My Oxide Layer?– Routine applications in semiconductor industry.– Automated tools with robot control.– Complicated for metal gate stack or SiGe S/D stressors.
• Infrared-Active Phonons– Compound Semiconductors (Si, Ge, GaP, GaAs, AlN, ZnO)– Cubic oxides (LiF, NiO, SrTiO3, spinels: MgAl2O4, Co3O4)– Complex oxides: LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.35
• Electrons: Interband optical transitions– CeO2, SrTiO3, ZnO– MgAl2O4, Co3O4 (spinel)
Stefan Zollner, January 2019, Piezo 2019 Conference 2
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Crystalline CeO2 on sapphire (liquid deposition)
• Insulating CeO2 film on sapphire, with band gap near 3.7 eV.• Determine film thickness from interference fringes in transparent region.• Fit optical constants with basis spline polynomials.
K. Mitchell, C.O. Rodriguez, Y. Li, 2013; X. Guo, Boston Applied Technologies, Inc.
transparent opaque
Fluorite (Oh5)
dielectricfunction
transparent
Stefan Zollner, January 2019, Piezo 2019 Conference 3
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Crystal Structure (Point & Space Group)
Electrons Phonons
Solid State Physics (crystalline)
Defects
Magnetism Superconductivity
Transport
Phase Transitions
Surfaces Topological Insulators
CMOS RF Power Analog
Photovoltaics Energy Conversion
Magnetic Storage Catalysis
Lasers Sensors
10-80 meV0.3-10 eVFar-IR to mid-IRNear-IR, VIS, UV
Excitons
Stefan Zollner, January 2019, Piezo 2019 Conference 4
Polaritons
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Infrared Lattice Vibrations in GaP
ReststrahlenBand
ε∞=9.14ε0=15.7
364.9 cm-1
402.5 cm-1
Stefan Zollner, January 2019, Piezo 2019 Conference 5
Td2
N.S. Samarasingha (unpublished)
lossfunction
dielectricfunction
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Lattice Vibrations of Binary Compounds
Stefan Zollner, January 2019, Piezo 2019 Conference 6 JVST B 37, 012904 (2019)
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Lattice Dynamics of NiO•Rocksalt crystal structure (FCC), Space group 225 (Fm-3m or Oh
5).•Single TO/LO phonon pair.•Antiferromagnetic ordering along (111), should cause phonon splitting (8-30 cm-1).
•Second-order phonon absorption.
TO TA+TO phonon
NiO Reststrahlen Band
Rooksby, Nature, 1943
ε0=11.3ε∞=5.0
Willett-Gies & Nelson, JVST A 33, 061202 (2015)
NiO cell
Stefan Zollner, January 2019, Piezo 2019 Conference 7
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Bulk AlN: Anisotropic Phonon Absorption
Wurtzite structure (C6v4):
A1+E1 infrared-active phonons Biaxial model
• Ordinary and extraordinary dielectric function (TO/LO).
Stefan Zollner, January 2019, Piezo 2019 Conference 8
Compare J. Yang, J. Appl. Phys. 98, 043517 (2005)
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Bulk ZnO: Anisotropic Phonon Absorption
Wurtzite structure (C6v4): A1+E1 IR active
Biaxial model• Ordinary and extraordinary dielectric
function (TO/LO).
-2 zno_ir 2 0.00 Å-1 zno_ir 1 0.00 Å0 biaxial 1 mm
Compare N. Ashkenov, J. Appl. Phys. 93, 126 (2003)
Stefan Zollner, January 2019, Piezo 2019 Conference 9 N.S. Samarasingha (unpublished)
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New Mexico State University
ZnO Thin Films on Si (by ALD)
Real and imaginary parts of dielectric function of ZnO layers on Si decrease monotonically with decreasing thickness.
Small redshift and increasing broadening with decreasing thickness. Continuing to investigate.
Stefan Zollner, January 2019, Piezo 2019 Conference 10 N.S. Samarasingha (unpublished)
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Bulk SrTiO3Lattice absorption
Stefan Zollner, January 2019, Piezo 2019 Conference 11
Perovskite structure (Pm-31 or Oh1)
3F1u(IR-active) + F2u(silent) modes
lossfunction:
LO phonons
dielectricfunction:
TO phonons
JVST B 18, 2242 (2001).
LO(Ti)
TO(O)
LO(O)
Sr mode at very low energy.
LO(Ti)
LO(O)
TO(O)
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Stefan Zollner, January 2019, Piezo 2019 Conference 12Stefan Zollner, March 2014 12Stefan Zollner, March 2014 12
Phonons in more complex oxides
New Mexico State University
Space GroupWyckoff positions
( ) ( )φχ cos2det += RNR R
63 or 3dD R cLaAlO3
7 or 3hO Fd mMgAl2O4
FTIR Ellipsometry
Loss function:LO phonons
Dielectric function: TO phonons
Willett-Gies, Thin Solid Films, 2013Zollner, Thin Solid Films, 2013
LO LO
TO TO
LaAlO3
MgAl2O4
3.03.222TO,
2LO, ±== ∏∞
i i
is ω
ωεε
2.08.72TO,
2LO, ±== ∏∞
i i
is ω
ωεε
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Stefan Zollner, January 2019, Piezo 2019 Conference 13
Phonons in LSAT (disordered double perovskite)
5 LO peaks:loss function
5-6 TO peaks:dielectric function
4 Raman peaks
T.N. Nunley, JVST A 34, 051507 (2016)
IR-active: 4F1uRaman-active: A1g+Eg+2F2g
Space group of Sr2AlTaO6 (SAT): F-43m or Td2
Extra peaks due to disorder.
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Stefan Zollner, January 2019, Piezo 2019 Conference 14
Plasmon-phonon polaritons (doping effects)
JVST B 37, 012904 (2019)
Two reststrahlen bands:• Low energy: Drude plasmon• High energy: TO/LO phonon• Doping pushes LO phonon
higher (polariton effect).
Doped GaAs (n=7×1017 cm−3)
Undoped GaAs
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Materials properties accessible by ellipsometry • Mid-infrared spectral range
– Insulator/semiconductor:Lattice vibrations (phonons)
– Metal: Free carrier properties (density, scattering rate)• Visible to UV range:
– Electronic excitations– Band gap, interband transitions
• Ellipsometry allows us to study semiconductors, insulators, and metals.
• Thin films and surfaces can be investigated with proper data analysis (curve fitting).
Stefan Zollner, January 2019, Piezo 2019 Conference 15
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Bulk SrTiO3:Electronic Structure, Band Gap
Stefan Zollner, January 2019, Piezo 2019 Conference 16
Direct band gap: 3.36 eVOther transitions at higher energies.
JVST B 18, 2242 (2001).
Energy (eV)0 1 2 3 4 5 6 7 8
epsi
lon
0
2
4
6
8
10
12
2
1
this workJellison
derivative spectraline shape analysis band structure
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Spinel (MgAl2O4) and LSAT (LaAlO₃)0.3(Sr₂TaAlO₆)0.7
Stefan Zollner, January 2019, Piezo 2019 Conference 17
C.J. Zollner, Thin Solid Films, 2013T.N. Nunley, JVST A 34, 051507 (2016)
Ozone surface cleaningSurface roughness correctionTauc-Lorentz+Gauss fitVery large band gap
LSAT
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Another Oxide Example: Co3O4 on spinel (MBE)
New Mexico State University
Band gap: 0.75 eV
Co3O4(22 nm)
K.N. Mitchell, Kormondy, SZ, Demkov, JAP 115, 243708 (2014)
Cubic field splitting
Stefan Zollner, January 2019, Piezo 2019 Conference 18
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SrTiO3 Thin Films on Si or Pt (MBE)
Epitaxial SrTiO3 layers have lower refractive index than bulk SrTiO3. It would be interesting to look at vibrational properties of SrTiO3 films on Si
(or other substrate) of different thicknesses.
Stefan Zollner, January 2019, Piezo 2019 Conference 19
JVST B 18, 2242 (2001)MRS Proc. 619, 167 (2000)
on Si
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SrTiO3 Thin Films on Si (liquid deposition)
Epitaxial SrTiO3 layers have lower refractive index than bulk SrTiO3. Bulk-like low frequency dielectric response. Not sure how to explain the low/high frequency discrepancy: O vacancy ?
Stefan Zollner, January 2019, Piezo 2019 Conference 20J. Appl. Phys. 111, 054108 (2012)
on Si
Energy (eV)
750C anneal
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New Mexico State University
ZnO thin film on Si (ALD)
Do the properties of ZnO layers on Si depend on the ZnO film thickness?
The excitonic enhancement disappears in thin films. Real and imaginary part of dielectric function of ZnO layers on Si decrease monotonically with
decreasing thickness. Small blueshift with decreasing thickness (confinement).
Kramers–Kronig consistent.
𝜺𝜺𝒁𝒁𝒁𝒁𝒁𝒁. 𝒕𝒕𝒆𝒆𝒆𝒆𝒆𝒆 − 𝟑𝟑𝟑𝟑𝑨𝑨𝒐𝒐
+ 𝜺𝜺𝑺𝑺𝑺𝑺𝒁𝒁𝟐𝟐.𝟑𝟑𝟑𝟑𝑨𝑨𝒐𝒐
= 𝜺𝜺𝒆𝒆𝒆𝒆𝒆𝒆. 𝒕𝒕𝒆𝒆𝒆𝒆𝒆𝒆
Stefan Zollner, January 2019, Piezo 2019 Conference 21
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New Mexico State University
ZnO thin film on SiO2 (ALD)
The excitonic enhancement is reduced with decreasing thickness. Real and imaginary part of dielectric function of ZnO layers on SiO2 decrease
monotonically with decreasing thickness. Small blueshift with decreasing thickness (more apparent than for film on Si).
Do the properties of ZnO layers on SiO2 depend on the ZnO film thickness?
Kramers–Kronig consistent.
Stefan Zollner, January 2019, Piezo 2019 Conference 22
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New Mexico State University
Materials properties accessible by ellipsometry • Mid-infrared spectral range:
– Insulator/semiconductor: Lattice vibrations (phonons)– Metal: Free carrier properties (density, scattering rate)
• Visible to UV range:– Electronic excitations, band gap, interband transitions
• Oxides are particularly interesting: complex vibrational & electronic structure.• Thin films and surfaces can be investigated with proper data analysis (curve
fitting).• Thin films often have different optical constants compared to bulk.
New Mexico State UniversityAPS conference in Socorro, NM
Hold the date: Next ICSE in Barcelona (2019).
Stefan Zollner, January 2019, Piezo 2019 Conference 23
http://ellipsometry.nmsu.edu
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Send us your samples: Metals, insulators, semiconductors
Flat, clean & uniform films, at least 5 by 5 mm2, low surface roughness, films on single-side polished [email protected]
Grad Students (former):Nuwanjula Sandamali, Farzin Abadizaman, Carola Emminger, Rigo Carrasco, Nalin Fernando, Lina Abdallah (Ph.D), Nathan Nunley (MS), Cesar Rodriguez (MS), Travis Willett-Gies (MS)Undergrad Students (former):Pablo Paradis, Cesy Zamarripa, Zachary Yoder, Jackie Cooke, Alexandra Hartman, Dominik Martens, Jaime Moya, Troy Powell, Luis Barrera, Eric DeLong, Amber Medina, Khadijih Mitchell, Cayla Nelson, Laura Pineda, Ayana Ghosh, Chris ZollnerVisitors and Collaborators:Sudeshna Chattopadhyay, Alex Demkov, John Kouvetakis, Jose Menendez, Jim Kolodzey, Arnold Kiefer
http://ellipsometry.nmsu.edu
Stefan Zollner, January 2019, Piezo 2019 Conference 24
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Backup Slides
New Mexico State University
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New Mexico State UniversityNew Mexico State University
Flat, clean, & uniform films, at least 5 by 5 mm2, low surface roughness, layers on single-side polished [email protected] http://ellipsometry.nmsu.edu
Grad. Students: Nuwanjula Samarasingha, Farzin Abadizaman, Carola Emminger, Rigo CarrascoUndergraduate Students: Pablo Paradis,Cesy Zamarripa, Zachary YoderCollaborators: Jose Menendez (Arizona State), Sudeshna Chattopadhyay (IIT Indore)Samples: Arnold Kiefer (AFRL), Jim Kolodzey (Delaware), John Kouvetakis (Arizona State), Alex Demkov (UT Austin)
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Thickness Measurements: InGaP HBT• How thick is my film?
New Mexico State University
Skyworks
Ellipsometry Spectrum
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Instrumentation
Spectroscopic Ellipsometer (UV/VIS-VASE)
What spectroscopic ellipsometry (UV-VASE) reveals:• Thickness (100 Å to 10000 Å)
• Absorption, band gap
• Refractive indexdetector
Monochromatorpolarizer
sample
analyzerΦ
X-ray diffraction & reflectance
What x-ray diffraction reveals:• Crystal structure• Lattice spacings (strain)• Thickness (5 Å to 1000 Å)• Surface, roughness layer
thickness
Spectroscopic Ellipsometer(IR-VASE)
What spectroscopic ellipsometry (IR-VASE)reveals:• Phonon absorption
• Optical Constants
detector
Rotating Compensator
polarizer
Source
PolarizerSpectral Range 1.7 μm to 40 μm(250 cm-1 to 5900 cm-1)
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New Mexico State University
Ellipsometry: How does it work ?
21
222
~
11tan1sin~
tan
εεε
ρρφφε
ρ
i
eEE
EE
RR i
rs
is
ip
rp
s
p
+=
+−
⋅+=
Ψ=⋅== ∆
Angle of incidence
Optical constants versus photon energy
P plane P plane E
S plane
Splane
Bulk sample
Monochromator orInterferometer (λ)
polarizer analyzer
detector
Φ
We measure the change in the polarization state of light, when it is reflected by a flat surface (bulk).
Result:
Reflectance ratio
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New Mexico State University
Ellipsometry: Maxwell’s equations in solid
New Mexico State University
– Gauss’ law (electric field):ε0 permittivity of vacuum
– Gauss’ law (magnetic field):
– Faraday’s law:
– Ampere’s law:µ0 permeability of vacuum
– Dielectric displacement
0=•∇ D
0=•∇ B
tBE∂∂
−=×∇
tDB∂∂
=×∇
0µ
densityflux magnetic
strength field electric
B
E
( ) ( ) ( )ωωεεω ED
0=
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New Mexico State University
Lorentz Model: Frequency dependence of ε
( ) ( )tiEtE ωexp0=
( ) ( )tikibm
qEtx
makxbvqEmaF
ωωω
−−+
−=
=−−=
exp20
( )
mkmnq
i
P
P
=
=
−−+=
20
0
22
220
2
1
ω
εω
γωωωωωε
Charge density
Resonance frequency
q
𝐷𝐷 = 𝜀𝜀0𝐸𝐸 + 𝑃𝑃 = 𝜀𝜀𝜀𝜀0𝐸𝐸
Absorption peaks
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New Mexico State University
Absorption and dispersion: Frequency dependence of ε
• Causality (Kramers-Kronig transform): The polarization cannot precede the external electric field: ε1 can be calculated from ε2 by complex residual integration (and vice versa).
• Dispersion and absorption are related!
( ) ( )
( ) ( )22
1
02
022
21
2
2
ξωξεξ
πωωε
ωξξξεξ
πεωε
−=
−+=
−
∫
∫∞
∞
∞
dP
dP
relations KronigKramers
phonons
electronicstates
ε
∞εlfε
ε1: Energy storedε2: Energy dissipated
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New Mexico State University
Infrared Lattice Absorption
• Si-Si bonds are non-polar.• Bonds: no dipole moment.• No infrared absorption.
• Ni2+-O2- bonds are polar.• Ni-O vibration has dipole moment.
New Mexico State University
Silicon:Diamond lattice
NiO or NaCl or LiF:Rocksalt lattice
Silicon dielectric function (IR)
Wave Number (cm -1)200 400 600 800 1000
<ε1>
11.688
11.690
11.692
11.694
11.696
11.698
11.700
ε2=0
FTIR ellipsometry
NiO
Typical Lorentz oscillator