Electronic structure of correlated electron systems : theory and...

93
Electronic structure of correlated electron systems : theory and experiment Lecture 4 G.A.Sawatzky

Transcript of Electronic structure of correlated electron systems : theory and...

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Electronicstructureofcorrelatedelectronsystems:theoryand

experimentLecture4G.A.Sawatzky

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Surfacesandinterfacesofionicsolidsandpnic?des

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ImportantforTMOxideinterfaces

•  Charge,spin,orbital,laHcedegreesoffreedom

•  ChargetransfervsMoJHubbardgaps

•  Stronglyionic(Madelungpoten?aleffects)

•  Polarsurfaces/interfaces•  Stronglynonuniformpolarizabili?es

•  Electronicpolaronsandbandgapclosingatinterfaces

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CorrelatedElectronsinaSolid

•  J.Hubbard, Proc. Roy. Soc. London A 276, 238 (1963) •  ZSA, PRL 55, 418 (1985)

If Δ < (W+w)/2 Self doped metal

dn dn dn-1 dn+1 U :

p6 dn p5 dn+1 Δ :

U = EITM – EA

TM - Epol

Δ = EIO – EA

TM - Epol + δEM

EI ionization energy EA electron affinity energy EM Madelung energy

Cu (d9)

O (p6)

Epol depends on surroundings!!!

Atasurfacethechargetransferenergydecreases,Uincreases

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NovelNanoscalePhenomenainTransi1on‐MetalOxides

IonicOxidePolarSurfacesStabiliza?onofpolarsurfacesbyepitaxy

Transparentinsulator½metallicFM

Applica1ons:Spintronics;CMR

SrO O

‐1+2‐2

Sr SrO

+1 +2‐2

<10ML

Ar1ficialMoleculesEmbeddedintoaMaterialCa,Mg,Sr,NivacanciesorO‐Nsubs?tu?oninoxides

Newclassofmagne?cmaterialsby‘‘low‐T’’MBEgrowthApplica1ons:Spintronics;NovelMagnets

JO N

LaMnO3eg

t2g

Mn3+3d4

Strained2DLayers Posi?veandnega?vepressure

Applica1ons:CMR;M‐ITransi?on;OrbitalOrdering

CorrelatedElectronSystemSurfaces

Kinksandstepsstabilizedbyepitaxy

NiO(100)1DMetallicstepsSuperconduc?ngCopperoxides

Applica1ons:NovelSC;QuBits

ElectronicStructureofInterfacesMetal‐Insulatorinterface:gapsuppression

Applica1ons:MolecularElectronics;FuelCells;ThermalBarrierCoa?ngs

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Defectsstudy:Supercellapproxima?on

To study defects we want to “break” periodicity in one (surface), two (wires) or three (single impurity) dimensions.

Slab geometry:

Impurity in the bulk:

Sr

Ti O

Unit cell of perfect inf. crystal

Supercell with an impurity

Perfectly imperfect inf. crystal

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NiObulk•  Rock salt structure •  AFM insulator (Exp. Gap ~4eV)

O2-: 2s2 2p6

Ni2+: 3d8

LSDA LSDA+U

U=8eV J=0.9eV

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Neutral(110)surfacesofNiOLSDA+U: U=8eV J=0.9eV Slab of 7 NiO layers

Bandgapatthesurfacedecreasesfrom3eVto1.2eVCanwegetdeltatogonega1ve?Stepedgescouldbe1Dstronglycorrelatedmetals

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CorrelatedElectronSystemSurfaces

Kinksandstepsstabilizedbyepitaxy

NiO(100)1DMetallicstepsSuperconduc?ngCopperoxides

Applica1ons:NovelSC;QuBits

Nega?veCTgapatsteppedsurfaces?

Ni2+goestoNi1+(d9)andholesinO2pfornega?vechargetransfergapi.e.selfdoping‐‐‐‐‐‐‐lookslikeholedopedcuprates!!!

NewHighTc??

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IonicMaterialscanexhibitPolarsurfacesandinterfacesandcan

electronicallyreconstruct

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Typesofreconstruc?on

Electronic Ionic Chemical

K3C60:R.Hesperetal.,Phys.Rev.B62,16046(2000).

+Q

‐Q

+Q

‐Q

+Q/2

+Q/2

‐Q/2

‐Q

+Q

‐Q

NiO(111):D.Cappusetal.,Surf.Sci.337,268(1995).

+Q

‐Q

+Q

‐Q

Rearrangementofelectrons

RearrangementofIonsface?ng

K-depositon: M.A. Hossain et al., Nat.

Phys. 4, 527 (2008). NiO(111): D. Cappus et al., Surf. Sci. 337, 268 (1995).

VacanciesoraddIons(K+)orOH‐

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Polar(111)SurfacesofMgO

2-

2+

Finite slab of charged planes

ΔV=58 Volt per double layer!

2- 2+

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Interes?ngmaterialsinwhichelectronicreconstruc?oncanstronglyalterproper?esandwhichcanbeusedforinterfaceengineeringtodevelopnewdeviceswithexo?cproper?es.

SuperConductors:YBa2Cu3O6+δ

(Cu)1+

(BaO)0

(CuO2)2‐

(Y)3+

(CuO2)2‐

(BaO)0

(Cu)1+

Perovskites:LaTMO3(Ti,V,Mn...)Spin,chargeandorbitalordering

LaOFeAs

1+

1‐

1+

Simpleoxides:SrO,NiO,MnO...

(111)surface

(001)surfaceintrivalentcompounds

(110)surface

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TiOCl

(Cl)1‐

(TiO)22+

(Cl)1‐

TiS2

(Ti)4+

(S)2‐

(S)2‐

Examplesofnonpolarlayerstructures

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adatomstabiliza?onofPolarsurfacesImportantalsoforgrowth

•  NiOgrownbyMBEiscoveredbyamonolayerofOH‐=1/2thechargeoftheNi2+layerunderneathandthereforestable

•  MnSsinglecrystalsgrownwithvaportransportmethodsyieldlargecrystalswith111facets????CoveredbyasinglelayerofI‐andthecrystalgrowsunderneath.Likeasurfactant

•  ½BamissingonthesurfaceofBaFe2As2•  K+adionsonYBCO•  Useaddlargeionsassurfactantsduringgrowthofpolarsurfacesystems

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Octopolarreconstruc?onofMgO(111)slab

Topview Sideview

Effec?vesurfacelayercharge=+2(3/4)‐2(1/4)=+1

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MgO O

‐1+2‐2

Mg MgO

+1 +2‐2

TransferoneelectronfromOlayertoMglayer

ELECTRONICRECONSTRUCTION

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LSDABandStructureofCaO(111)SlabterminatedwithCaandO

-10

-5

0

5

10

Γ K M Γ A L H A

Ener

gy (e

V)

-10

-5

0

5

10

Γ K M Γ A L H A

Spin Up Spin Down

12

-4

-2

0

2

4

6

8

10

L X W L K

Ener

gy (e

V) Note:

Bulk material (no surface) is an insulator

But surface is metallic! And ferromagnetic

Ca 4s

O 2p

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111surfaceofK3C60anditspolarnature.

HesperetalPRB62,160462000coinedthephraseelectronicReconstruc?onforK3C60surfaces

severaltermina?onsarepossibleandatleast2differentPhotoemissionspectraatthesurfacehavebeenobservedcorrespondingtoC601.5‐,2.5‐

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Hossainetal.,NaturePhysics4,527(2008)

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Hossainetal.,NaturePhysics4,527(2008)

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ElectronicReconstruc?on

•  Energe?callyfavourableinionicsystemswithsmallbandgapsandinsystemswithmul?valentcomponents(Ti,V,C60,Ce,Eu‐‐‐‐)

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MaanhartetalMRSbule?nreview

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Ohtomo and Hwang Nature 427, 423, 2004

Metallic interface due to electronic reconstruction

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Influence of the La AlO3 thickness on a SrTiO3 substrate on the conductivity

S.Thiel et al Science 313, 1942 (2006)

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N.Reyren et al Science express 317, 1196 207

Superconducting interface SrTiO3/LaAlO3

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Somekeypapersonpolarsurfacesandinterfaces

•  R. Lacman, Colloq. Int. CNRS 152, 195 (1965) •  The stability of ionic crystal surfaces P.W. Tasker, J. Phys. C 12, 4977 (1979) •  Reconstruction of NaCl surfaces D. Wolf, PRL 68, 3315 (1992) •  Adsorption on Ordered Surfaces of Ionic solids ed. H. J. Freund and E. Umbach, Springer Series in Surface Science, Springer, Berlin, 1993, vol. 33. •  Electronic reconstruction of polar surfaces in K3C60: R. Hesper et al., PRB 62, 16046 (2000) •  High mobility electron gas at LaAlO3 /SrTiO3 interface A. Ohtomo and H.Y. Hwang, Nature 427, 423 (2004)

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InterfacesbetweennarrowbandsemiconductorsandmetalsmaybeverydifferentfrombroadbandsemiconductorslikeSiorGaAs

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NarrowbandwidthultrathinlayersonPolarizablemedia

•  correlatedelectronsystemsmostlyhavebandwidthsofonly1‐2eV

•  Molecularsolidshaveverysmallbandwidthsof1eVorless

•  Si,GaAshavebandwidthsof20‐30eVandbehaveverydifferentlyatinterfaces

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Defini?onofConduc?vityGap

Egap=(EgrN‐1–EgrN)+(EgrN+1–EgrN)

=EgrN‐1+EgrN+1–2EgrN

Egr>Groundstate

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+

eћ ћ

e

PES(EI) IPES(EA)

Fullpolariza?oncandevelopprovidedthatDynamicResponseTimeofthepolarizablemediumisfasterthan

hopping?meofthecharge

E(polarizability)>W;EMOenergyspliHnginmolecules,plasmafrequencyinmetals‐‐‐‐‐

APictureofSolva?onofionsinapolarizablemedium

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Manipulating Material Properties

How about using Image Charge Screening ?

  magnetic : (super) exchange, TC, TN

  electrical : (super) conductivity, TC, M-I-T

  optical : band gaps

  Coulomb energy :

  Charge transfer energy :

  Band gap :

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q’ q

2

1R1

R2n

a

0

Poten?alofapointchargeintheneighbourhoodofadielectric Macroscopiccon?nuum‐uniform

‐surfacecharge

Energytocreateachargeqata:

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NotethatimagechargescreeninggoesasQsquared!!!

Cannotbetreatedasachangeinsinglepar?clepoten?alELECTRONICPOLARONS

Theenergiesofelectrons(cond.Band)andholes(valenceband)arebothlowered

Thereforeconduc?vitygapislowered

Bothelectronsandholeswillwanttomovetotheinterface

Frenkellikeexcitonstatesarenotaffectedtolowestorder

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Si, Ge Molecular

Egap

Gap HOMO s

LUMO p W

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Band width ~ 0.5 eV >10 eV

Exciton B.E. ~ 1 eV ~20 meV

Polarons ћ 0 ~ W ( ~ >1) —

Electr. – Electr. UW U<<W

Magnetism Yes (T-S~0.5eV) No

Cond. Gap Egap W Egap << W

Si, Ge, GaAs Molecules

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EF

Egap~1eV

Egap=constant?

EF

Conven?onalwidebandsemiconductor–metalinterface

Narrowbandsemiconductor–metalinterfaceinwhichThepolariza?oncloudcanfollowtheelectronyielding“ELECTRONICPOLARON’’

Examplesaremolecularsolids,stronglycorrelatedsystems,TM,RE‐‐‐‐‐

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Combinedphotoemission(solidlines)andinversephotoemission(dotswithsolidlinesasguidetotheeye)spectraoftheC60monolayeronAg(111)(upperpanel)andthesurfacelayerofsolidC60(lowerpanel).Alsoincludedarethephotoemissionspectra(dashedlines)ofthefullydopedC60(“K6C60”)monolayeronAg(111)andthesurfacelayerofsolidK6C60.

 Bandgapisreduced!

 MolecularOrbitalStructureisconserved!

R. Hesper, et al Strongly reduced band gap in a correlated insulator in close proximity to a metalEurophysics Letters 40, (1997) 177-182.

S. Altieri, et al. Reduction of Coulomb and charge transfer energies in oxide films on metals Phys. Rev. B59 (1999) R2517-2520.

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polarizabilityinTMcompoundsisverynonuniform

Thedielectricconstantisafunc1onofr,r’,wandnotonlyr‐r’,wandsoIsafunc1onofq,q’,w

Stronglocalfieldcorrec1onsforshortrangeinterac1onsMeindersetalPRB52,2484(1995)VandenBrinketalPRL75,4658(1995)

arXiv:0808.1390Heavyanionsolva?onofpolarityfluctua?onsinPnic?desG.A.Sawatzky,I.S.Elfimov,J.vandenBrink,J.Zaanen

arXiv:08110214vElectronicpolaronsandbipolaronsinFe‐basedsuperconductorsMonaBerciu,IlyaElfimovandGeorgeA.Sawatzky

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HomogeneousMaxwellEqua?ons

(r,r’)—>(r–r’)—>(q)

Okifpolarizabilityisuniform

InmostcorrelatedelectronsystemsandmolecularsolidsthepolarizabilityisactuallyVeryNONUNIFORM

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Effec?veHamiltonianscanbemisleading

•  Hubbardlikemodelsarebasedontheassump?onthatlongerrangecoulombinterac?onsarescreenedandtheshortrangeonsiteinterac?onsremain

•  HoweverUfortheatomisabout20eVbutUasmeasuredinthesolidisonlyoforder5eVandforthepnic?desevenlessthanthis

•  HOWISTHISPOSSIBLE?

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Reduc?onofonsiteinterac?onsandchangingthenearestneighborinterac?onswithpolarizableionsinalaHce

Weassumethattheholeandelectronmoveslowlycomparedtotheresponse?meofthepolarizabilityoftheatoms.Notetheoppositelypolarizedatomsnexttotheholeandextraelectron

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Sothereduc?onoftheHubbardUinapolarizablemediumlikethisintroducesastrongNextnnrepulsiveinterac?on.Thischangesourmodel!!

Foradifferentgeometryactuallytheintersiteinterac?oncanalsobestronglyreducedperhapsevenAJrac?ve(FePnic?des)

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Rest comes from bond Polarization involving O 2p and TM 4s states

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Noteshortrangeinterac?onsarereduced“screened”andintermediaterangeinterac?onsareenhancedoran?screened‐quiteoppositeto

conven?onalwisdominsolidstatephysics

JeroenvandenBrinkThesisUofGroningen1997

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Usingnonuniformpolarizabilityinar?ficiallyengineeredstructures?

UseanFeAslayerasinLaFeAsOasanexample

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Nowtocompounds

•  InTMcompoundstheTMisweaklypolarizablewhiletheanionsarestronglypolarizable

•  Thechargemo?onisusuallyontheca?oni.eTMion.

•  Sothepolarizableen??esarenottheonesonwhichthemobilechargeresides.

•  Asforionsinpolarsolvents

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Iwillshowthat

•  Thepolarizabilityofanionsresultsinastrongreduc?onoftheHubbardonsiteU

•  Thechargedcarrierslivingontransi?onmetalionsaredressedbyvirtualelectronholeexcita?onsontheanionsresul?nginelectronicpolarons

•  Thenearestneighborcoulombinterac?onscanbeeitherscreenedoran?screeneddependingonthedetailsofthestructure

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+

eћ ћ

e

PES(EI) IPES(EA)

Fullpolariza?oncandevelopprovidedthatDynamicResponseTimeofthepolarizablemediumisfasterthan

hopping?meofthecharge

E(polarizability)>W;EMOenergyspliHnginmolecules,plasmafrequencyinmetals‐‐‐‐‐

APictureofSolva?onofionsinapolarizablemedium

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WearealivebecauseofSolva?on

Ionsbothposi?veandnega?veinourbodiesregulatemosteverything

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Reduc?onofUduetopolarizabilityofO2‐(SOLVATION)

U = EITM – EA

TM -2Epol

EI ionization energy EA electron affinity energy

Epol = 2 For6nnofO2‐~13eVFor4nnAs3‐~17eV

ELECTONICPOLARON

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Whataboutintersiteinterac?onV?

Forpnic?destheFe‐As‐Fennbondangleis~70degreesThereforethecontribu?ontoVisaJrac?ve~4eV

CanberepulsiveoraJrac?vedependingonbondangle

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Polariza?oncloudForTwochargesonNeighboringFe“ELECTRONIC

BIPOLARON

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Roughes?mateAtomicorionicpolarizability~volume

•  Consideratom=nucleusatthecenterofauniformlychargesphereofelectrons

•  InafieldEadipolemomentisinducedP=αE

•  ForZ=1and1electronrestoringforce=

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WhatstheimportanceofAsorP?

•  Verylargeanions•  Electronicpolarizabili?esroughlyequaltovolume

•  4porbitalshave2radialnodes–verydiffuse•  Weakhybridiza?onwithhighlydirectedlocalFe3dorbitals(frombandtheory)

•  LargepolarizabilitystronglyreducesUonFeandthenearestneighborinterac?onVbetweenFe3d

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SomeearlierpapersonpolarizabiiityMeindersetalPRB52,2484(1995)VandenBrinketalPRL75,4658(1995)J.vandenBrinketalEurophysicsLeJers50,447(2000)

ComparisonofCupratesandPnic?desTheroleofpolarizableheavyanions

GeorgeSawatzkyPhysicsandastronomydept.

UBCVancouverBCCanada

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AreCupratesandPnic?desreallysimilar?

Cuprates•  LocalmomentsS=1/2

•  Largecrystalfield>dbanddispersion

•  LargesuperexchangeAn1ferromagne1c

•  ChargetransfergapsnotMoZHubbard

•  Chargecarriersmostlyofanionpcharacter

•  StrongCu3d‐O2phybridiza1on•  2Dimensional•  Noorbitaldegreesoffreedom

FePnic1des

•  SmallvariableamplitudeSDW

•  Smallcrystalfields<Fedbanddispersion

•  Someevidenceoflargespinwavedispersion

•  ReportssupportsmallMoZHubbardgapifany

•  ChargecarriersFedelectronsandholes

•  Rela1velyweakFe3d‐As4phybrid.

•  Weakanisotropy(pen.depth)

•  Possibleorbitalordering

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WhatwouldtheFe3dstateslooklikeifwestartedinthesamewayasinthe

Cuprates?

As

Fe

NotlayeredlikeTiS2!!thesurfaceasdrawnisPOLAR!!

~Tetrahedralcoordina?onCrystalfieldspliHngIsinvertedascomparedtoOctahedral

Ba122MarkGoldenB455,and218surfaceBaordering

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Localcrystal/ligandfieldpictureasinCuprates?

Bandtheory‐Cystal/ligandfieldspliHngisnotverylargeAndlessimportantthanthe3dbandstructure.

Verydifferentfromthecuprates!!

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ElectronicStructureofLaOFeAsbandtheory(Elfimov)

GGA;nonmagne?c

FatbandsshowAs4pcharacter

MTRadii(A):

La 1.22

Fe 1.01

As 1.38

O 1.11

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CorrelatedElectronsinaSolid

•  J.Hubbard, Proc. Roy. Soc. London A 276, 238 (1963) •  ZSA, PRL 55, 418 (1985)

dn dn dn-1 dn+1 U :

p6 dn p5 dn+1 Δ :

U = EITM – EA

TM - Epol

Δ = EIO – EA

TM - Epol + δEM

EI ionization energy EA electron affinity energy EM Madelung energy

Cu (d9)

O (p6)

Epol depends on surroundings!!!

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Sincethepurepnic?deslikeLaFeAsO,BaFe2As2,etcare(bad)metalswe

wouldhavetoconcludethatU<the3dbandwidth

HowevertheTdependentconduc?vityandmagne?csuscep?bili?esare

strange

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arXiv:0808.0708 LaFeAsO$_{1-x}$F$_x$ R. Klingeler et al IFW Dresden)

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Howcanweexplainthelowstronglyvaryingmagne?cmoment?

•  LowHubbardUi.e.U<3dbandwidth‐strongpolarityfluctua?ons–reducetheeffectofJH

•  Bandwidthisabout2‐3eVsoU~2‐3eV?•  Howdowereduceanonsiteinterac?onfromabout20eVinthefreeiontolessthan2eV?

•  Alargecontribu?onisthePolarizabilityoftheanion!!!

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2levelmodelforthedynamichighfrequencypolarizabilityandmo?onof

thepolaron/bipolaron

UseatwolevelmodelofAsi.e.4poccupiedand5sempty.InanelectricfieldduetothepointchargetheymixyieldingThepictureswedrawofthepolariza?oncloud.

MonaBerciuetalPRBinpress

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=4p‐5sexcita?onenergy

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BecauseOmegaisahighenergywecanuseperturba?ontheory

intasthesmallestWeassumeonlyonepar?clesothatU

isnotac?ve

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TheelectronicPolaroneigenenergiesaregivenby

WeusetheknowelectronicpolarizabilityofAstodeterminegForsmallgi.e.inthelinearregime.g=2.5eVforα=10cubicA

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TheMo?onofasinglequasipar?cleThesemovelikeelectronicpolarons

i.e.theoverlapintegralofthepolariza?onclouds

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Theeffec?vepolaronmassissimplyt/teff=2.2thisislightcomparedtoconven?onallaHcepolaronmasses

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AngularresolvedphtoemissioncomparisonwithLDALaFePOLuet.alNature455,812008

NOTEThebandtheoryresulthasbeenshi~edupby0.11eVandscaleddownbyafactorof2.2

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Howaboutthereduc?onofthecoulombinterac?onsbetweentwo

electronsonFesites?

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Canthisleadtobipolaronicboundstates?Andifsowhatistheirmass

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Notethatthebipolaronmassisonly8?mesthefreepar?clemassthisIsagainmuchlighterthanforlaHcebipolaronsallowingforaneventualhighBoseEinsteincondensa?onT.

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Systema?csofTc

•  Tcvaria?onwithbondanglesbondlengthsandpolarizabili?es

•  Notethato~entheAs‐Fe‐Asbondangleisusedortheorthorhombicdistor?onintheplaneortheFe‐As‐Fediagonalbondangleisusedforsystema?cs.

•  OurmodelsuggestsratherusingbondlengthsandtheFe‐As‐Fenearestneighborbondangle

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Effec?veinterac?onploJedvslogTc

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Conclusions•  TheFepnic?desandheavyanionchalcogenidesareverydifferent

fromthecuprateswithregardtolowenergyscaleproper?es:spin,charge,orbital,andlaHcedegreesoffreedom

•  Hybridiza?oncovalencyinvolvingFe3disweakcrystalandligandfieldsaresmall,electronicstructuregivenbybandstructurewithweakcorrela?on

•  WesuggestthattheAs4p–Fe4sand4phybridiza?onandespeciallytheArsenicELECTRONICpolarizabilitysetthesceneforabandstructureapproach.

•  Thequasipar?clesareelectronicpolaronswithamodestmassofabout2‐3withpossiblyanaJrac?venninterac?onresul?nginbipolaronswiths,ordwavesuperconduc?vityandalsoamodestmass

•  DESIGN(ARTIFICIAL)STRUCTURESUSINGHIGHLYPOLARIZABLEATOMSORSMALLMOLECULESALTERNATINGWITHNARROWBANDMETALFILMFORHIGHERTc’s?

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Materialdesignandlimita?ons

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WhatdoesCodo?Dope???

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Someotherexperimentalresults

•  NeutronscaJeringyieldsorderedmomentsrangingfromverysmallto0.9µB

•  Magne?corderingisan?ferromagne?cSDWlike1Dferromagne?cchainscoupledan?ferromagne?cally

•  Neutroninelas?cscaJeringyieldsalargespinwavevelocityi.e.largeJbutalsoalargespinwavegapof10meVandthespinwavesareheavilydampedaboveabout30meV.“StonerCon?nuum?”

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SinghetalFermisurfaceLaFeAsOLDA

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Pleaseciteas:

GeorgeSawatzky:LecturedeliveredattheXIVTrainingCourseinthePhysics ofStronglyCorrelatedSystems,VietrisulMare(Salerno) Italy,October5–16,2009.