Electrochemically induced switching in SmHx thin films
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Transcript of Electrochemically induced switching in SmHx thin films
Electrochemically induced switching in SmHx thin films
Pushpendra Kumar, L.K. Malhotra*
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India
Received in revised form 19 May 2004; accepted 21 May 2004
Available online 4 July 2004
Abstract
Discovery of optical and electrical switching in yttrium and lanthanum hydride thin films in 1996, has triggered large scale
investigations of rare earth hydride thin films. Both light and heavy rare earths have been shown to exhibit this so called
‘switchable mirror’ effect. Besides gas phase loading, solid as well as liquid electrolytes have been used as means of hydrogen
loading. In this paper, we report on the ability of samarium films to switch between the reflecting and transparent states
electrochemically by altering the hydrogen content. Samarium films of typical thickness 55 nm deposited by vacuum
evaporation and covered with Pd overlayer of thicknesses 5, 8 and 11 nm were loaded with hydrogen and deloaded in a
1 M KOH solution galvanostatically at room temperature. Our studies have shown that thickness of palladium overlayer plays
the most crucial role in observing fast transition between the as deposited metallic and the semiconducting nearly samarium
trihydride states as well as to obtain a very high optical contrast. The large reversible change in transparency between di and
trihydride states suggests possibilities of use of samarium films as an optical shutter as well as a hydrogen sensor material.
# 2004 Elsevier B.V. All rights reserved.
Keywords: Samarium hydrogenation; Palladium; Electrochemical behavior; Metal to semiconductor transition; Optical switching
1. Introduction
In the continuing research effort on rare earth
hydrides (REHx), the discovery of switchable mirror
effect by Huiberts et al. [1] occupies a special place.
By subjecting a 500 nm thin film of yttrium capped
with 20 nm Pd overlayer to 105 Pa of hydrogen gas, a
metal to semiconductor transition accompanied by
drastic changes in optical properties was observed.
This switchable mirror effect has since received a lot
of attention both from fundamental physics [2–4]
point of view as well as its technological applications
in smart windows, hydrogen sensors, solid state dis-
plays and electrochromic devices [5,6]. It is now
known that almost all rare earth metals and rare earth
based alloys exhibit this effect [7,8]. Hydrogenation of
these switchable mirrors can be achieved either by
exposing the sample to a hydrogen gas atmosphere or
electrochemically by polarization in a suitable elec-
trolyte solution [9–11]. Because of the hazards
involved in handling hydrogen gas, and the difficulty
in continuously monitoring the amount of hydrogen
getting incorporated into the films, gas phase loading
is not very practical from the application point of view.
These issues can be taken care of by hydrogenation via
electrochemical means. However, there are some
questions about cycling durability in the electroche-
mical process due to high reactivity of the metals and
their hydrides towards electrolyte solution and the
resulting enhanced corrosion. The cyclic durability
Applied Surface Science 236 (2004) 461–466
* Corresponding author. Tel.: þ91 1126 591325;
fax: þ91 1126 581114.
E-mail address: [email protected] (L.K. Malhotra).
0169-4332/$ – see front matter # 2004 Elsevier B.V. All rights reserved.
doi:10.1016/j.apsusc.2004.05.140
of switchable mirrors in KOH solution has been
investigated in detail by Janner et al. [12] by using
different sample stacks and growth conditions. The
electrolyte (water, ethanol and ethylene glycol) com-
patibility with these switchable mirrors for their dur-
ability and proton conductivity has been discussed in
detail by Matveeva et al. [13]. The role of Pd overlayer
has also been crucial in controlling the hydrogen
kinetics and stability in all the metal hydride thin film
devices. In this paper, we report on the ability of
samarium films to switch between the reflecting (gray)
and transparent (golden-greenish) states electroche-
mically and the effect of Pd overlayer on switching
behavior of SmHx thin films and their cyclic durability.
2. Experimental
Sm films of thickness 55 nm were deposited by
vacuum evaporation on 40 mm � 40 mm � 2 mm
ultrasonically cleaned glass substrates. The base pres-
sure in the vacuum system was 7 � 10�5 Pa prior to
deposition. Pd overlayers of different thicknesses 5, 8
and 11 nm were subsequently deposited on top of the
Sm films without breaking the vacuum. The geometry
shown in Fig. 1(a) was obtained by using a mask
during the evaporation process. The experimental
details for in situ measurement of film thickness
and rate of deposition have been described in one
of our earlier paper [14]. Two contacts A and B
(Fig. 1(a)) were then made for electrical measure-
ments using copper wires and silver paste. The elec-
trochemical measurements were performed in an
aqueous 1 M KOH solution using a Pt strip as a
counter electrode and an Hg/HgO electrode as a
reference electrode. Fig. 1(b) shows the experimental
setup used for electrochemical loading. The circular
portion of palladium capped samarium films was
immersed in the electrolyte, whereas the contacts were
kept in the atmosphere. The effective area of palla-
dium capped samarium films exposed to 1 M KOH
electrolyte solution was 4.9 cm2. All potentials were
measured with respect to the reference electrode using
a electrometer (Keithley, Model-6517A) and a con-
stant current source (Keithley, Model-224) was used to
apply a current. For in situ optical transmission, the
Pd-capped Sm film-working electrode (WE) was illu-
minated with a diode laser (Newport Corporation,
USA, LA 12-10—650 nm) and the transmission inten-
sity measured with a Photodyne radiometer/photo-
meter (Photodyne Inc., USA, Model 88XLA),
placed on the opposite end. A digital multimeter
was used to monitor the resistance. Before each
measurement, high purity argon gas was bubbled
through the solution at least for 15 min to remove
the oxygen and a constant argon flow was maintained
over the electrolyte during the measurements.
3. Results and discussion
Charging (loading) and discharging (unloading) of
hydrogen into/from Pd-capped Sm films (used as
working electrode in the electrolytic cell) was
achieved by polarizing/depolarizing (cathodically/
anodically) the working electrode, respectively.
Fig. 2(a)–(c) shows the development of potential on
charging and discharging of the working electrode and
Fig. 1. (a) Sample geometry and (b) electrochemical setup.
462 P. Kumar, L.K. Malhotra / Applied Surface Science 236 (2004) 461–466
the corresponding, in situ measured variation of trans-
mittance for 55 nm Sm films covered with Pd over-
layers of thicknesses 5, 8 and 11 nm, respectively. It is
evident that the potential falls sharply in each case
during cathodic polarization of the working electrode.
This fall in potential is indicated by the portion AB in
Fig. 2(a)–(c). The corresponding changes in the trans-
mittance are also shown in the same figures. The
metallic gray color of the film (corresponding to point
A in the figure) changes to the golden-greenish color
(point B). This change in color represents the trans-
formation of the samarium films from the metallic
state to the nearly trihydride state as also confirmed by
measurement of resistance. The switching time
(defined as the time required to reach 90% of the
maximum transmittance) varies with the Pd overlayer
thickness. The switching times obtained with three Pd
overlayers of thicknesses 5, 8 and 11 nm were found to
be 38, 30 and 22 s, respectively. We observed bubble
formation during cathodic polarization of working
electrodes while working with Sm films covered with
Pd overlayers of thicknesses 5 and 8 nm but no bubble
formation was observed for 11 nm Pd overlayer. The
presence and absence of bubble formation on working
electrode can be understood as follows.
During electrochemical loading, the electrolytic
reduction of a proton donating species, water in our
case, results in the following reaction:
H2O þ e� ! Had þ OH�
The mechanism of hydrogen entry into palladium
involves proton discharge H þ e� ! H�. The H
atoms subsequently diffuse into the underlying Sm
film and the reaction of hydrogen with Sm proceeds as
follows:
Sm þ 32
H2 ! SmH2 þ 12
H2 , SmH3
The second step is a reversible transition, which can
easily be induced by changing the polarity of the cell
or in open circuit condition, whereas the first step is
unidirectional. This is because of the relative small
heat of formation for the second step (�39.6 kJ/mol
H) compared to the heat of formation for the first step
(�202.6 kJ/mol H) [15]. The experimental evidence
for this reaction comes from the X-ray diffraction data
and change in transmittance as reported in one of our
earlier papers [16].
Since the surface energy of Pd cap layer is higher
than that of any rare earth metal [17], the nucleation
and growth theories suggest an activation barrier to the
nucleation of the condensed phase [18]. Pd will there-
fore deposit in the form of electrically disconnected
small clusters. At low thicknesses, these clusters do
not cover the entire surface area of the underlying Sm
films. Therefore, between two clusters oxide forma-
tion takes place. Hydrogen can only diffuse through
Fig. 2. Development of electrode potential E and in situ measured
optical transmission as a function of time for 55 nm Sm film
(working electrode) covered with different thicknesses of Pd
overlayer: (a) 5 nm; (b) 8 nm; (c) 11 nm during galvanostatic
hydrogen loading and unloading at current density 3.057 mA/cm2
in 1 M KOH.
P. Kumar, L.K. Malhotra / Applied Surface Science 236 (2004) 461–466 463
the Pd clusters but not through oxide covered areas.
Thus, all the H atoms liberated due to proton discharge
cannot diffuse into the Sm films. Since they can also
not exist in free state, two of them pair together
immediately to form H2 molecules, which are liber-
ated as hydrogen gas at the cathode. The bubble
formation in 5 and 8 nm Pd overlayer may be attrib-
uted to the excess hydrogen evolution at the working
electrode, the amount of hydrogen evolution exceed-
ing that getting incorporated in samarium films. Our
results suggest that for Pd overlayer of thickness
11 nm, the rate of evolution and absorption of hydro-
gen may be equal and this may be the reason for the
absence of bubble formation on working electrode.
The portion B to C in the transmittance and poten-
tial curves indicates no change in transmittance and
potential after the formation of nearly trihydride state
even though current density was maintained at the
initial value of 3.057 mA/cm2.
At point C, the films were anodically discharged by
changing the polarity. Comparison of transmittance
curves in Fig. 2(a)–(c) shows that the discharging
(unloading) is very slow in films covered with Pd
overlayer of thickness 5 nm. The rate of discharging
increases with the increase in the Pd overlayer thick-
ness. It has been theoretically predicted and experi-
mentally verified that the geometry and the electronic
band structure of the Pd clusters vary with cluster size
and they show corresponding change in their proper-
ties, for example, these clusters cease to show rever-
sible hydrogen deloading capacity [19–21] but they
continue to show catalytic hydrogen dissociation
behavior. This explains slow discharge of hydrogen
in Sm films capped with low thickness of Pd overlayer.
The reversibility between the charged and discharged
states also becomes better with increase in Pd layer
thickness. However, even at higher thickness of Pd, the
hydrogen from the charged electrode cannot be
removed completely by anodic discharging [12]. This
is consistent with the reported observations that rever-
sibility can only occur between dihydride and trihy-
dride states and that one cannot remove hydrogen from
the dihydride state. No degradation of the films was
observed even after 40 cycles of charging (loading)/
discharging (unloading) in 11 nm Pd covered film and
there was no trace of any bubble formation. The
reversible switching between dihydride and trihydride
states occurred within 6 s and was reproducibly
observed for 40 cycles. Fig. 3 shows the change in
transmittance after 40 cycles of loading and unloading
of hydrogen between dihydride and trihydride state for
the film covered with Pd (11 nm) overlayer.
In all the three cases discussed above, the fall in
potential is very high. This is due to the high applied
current density between working and counter elec-
trode. If current density is high, then the rate of
evolution of hydrogen ions at the electrode surface
will be high, resulting in a high chemical potential
generated in the solution. The overpotential
Z ¼ E � Er related to current density j is governed
by the Butler–Volmer equation [22]:
j
j0
¼ exp ð1 � aÞ nF
RTZ
� �� exp �a
nF
RTZ
� �
where j0 is the exchange current density, a the transfer
coefficient, and n the number of electrons involved in
the charge-transfer density reaction. E and Er repre-
sent the potential measured when a current density j is
passed across the WE–electrolyte interface and the
reversible potential corresponding to the system at
equilibrium with no current passing, respectively.
At high positive values of the over-potential, when
ðð1 � aÞnFZ=RTÞ 1, the second term on the right-
hand side of the above equation becomes negligible
with respect to the first one and the equation becomes:
j ¼ j0 exp ð1 � aÞ nF
RTZ
� �
This explains the direct correlation between Z and j.
0 50 100 150 200 25010
15
20
25
30
35
T (
%)
Time (sec)
Fig. 3. Change in transmittance with time after 40 cycles between
dihydride and trihydride states on loading and unloading of
hydrogen for the film covered with higher thickness of (11 nm) Pd
overlayer.
464 P. Kumar, L.K. Malhotra / Applied Surface Science 236 (2004) 461–466
Fig. 4 shows the variation of switching time with
applied current density. The switching time decreases
with increase in current density. The variation of
switching time with applied current density is related
to the equation [22]:
t1=2 ¼ p1=2nFD1=2C0
2j
where j is the applied current density, C0 the concen-
tration of hydrogen in the electrolyte and D the
diffusion coefficient. Our experimental results agree
with the variation suggested by this equation. The
decreased switching time can also be explained due to
the increased rate of reaction on the surface of the
working electrode, rate of reaction being high because
of a higher driving force at high current density.
Our studies show that in addition to thickness of Pd
overlayer, the interface between Sm and Pd films plays
an important role in controlling the switching time as
well as their chemical stability in the electrolyte and
cycle durability. We have found that the time duration
between deposition of Sm and Pd is an important
factor. In some cases, where the latter was not con-
trolled, no loading of hydrogen could be achieved.
Similar observations have also been reported earlier
[8].
4. Conclusions
The charging and discharging of 55 nm thick samar-
ium films covered with different thicknesses (5, 8 and
11 nm) of Pd overlayer, carried out at current density
of 3.057 mA/cm2 in 1 M KOH solution, reveal that the
thickness of Pd overlayer plays a crucial role in
controlling the switching time, chemical stability
and cycling durability. The minimum switching time
between dihydride and trihydride states was found to
be 6 s in Sm film covered with 11 nm thick Pd over-
layer. The current density has also been found to play a
crucial role in controlling the switching time. The
ability of samarium films to quickly switch between
the reflecting and transparent state electrochemically
by altering the hydrogen content, suggests potential
applications in optical windows as well as hydrogen
sensors.
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0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
20
40
60
80
100
Sw
itch
ing
tim
e(s
ec)
Current density mA/cm2
Fig. 4. Variation of switching time with current density for a Pd
(11 nm) capped Sm (55 nm) film.
P. Kumar, L.K. Malhotra / Applied Surface Science 236 (2004) 461–466 465
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466 P. Kumar, L.K. Malhotra / Applied Surface Science 236 (2004) 461–466