ELDRS - Verification of Enhanced Low Dose Rate Sensitivity ...
Transcript of ELDRS - Verification of Enhanced Low Dose Rate Sensitivity ...
ELDRS - Verification of Enhanced Low Dose Rate Sensitivity Accelerated Test Method
ESTEC - Contract No. 22051/NL/PA
Project Coordinator: Peter Beck
Project Team: Michael WindMarcin Latocha
ESA Technical Project Officer: Marc Poizat
Content
ELDRS Test MethodProposed Parts ListVerification Test PlanPreliminary Test ResultsStatistical Analysis with ANOVAConclusion and OutlookELDRS Website eldrs.net
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ELDRS Test Method
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Motivation
• Concern for bipolar technology used in space
• Low dose rate testing is time consuming !
• e.g. 100krad: 10 mrad/sec 4 months
• 1 mrad/sec ~3.5 years
• Accelerated switching dose rate method proposed by UM2
• ELDRS project checks the applicability of UM2 test method
Reference: J. Boch, et.al., „Physical model for low dose rate effect in bipolar devices“, IEEE-TNS, vol. 53, p. 3655, December 2006
Degradation of the base current, Ib for NPN and PNP transistors Total dose: 20 and 30 krad (SiO2)
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The Accelerated Switching Test Method
Total Dose
Deg
rada
tion
Low Dose Rate SwitchLDR – S
High Dose Rate SwitchHDR - S
1st Ex
posu
re S
eries
2nd Ex
posu
re S
eries
3rd Ex
posu
re S
eries
4th Ex
posu
re S
eries
5th Ex
posu
re S
eries
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Low Dose Rate Continuous (Reference)LDR - C
Example: ELDRS Effect for LM139
Ref: .J. Boch, et.al., „The Use of a Dose –Rate Switching Technique to CharacterizeBipolar Devices“, IEEE-TNS, vol. 56 (6), p. 3347, December 2006
Accelerated switching test for input bias current of LM139
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Proposed Parts List
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Selection of parts for the experiments
Basis: Approved component list by ESA CTB radiation working groupSelection Parameter:
E (0,1): ELDRS sensitivity (literature)1)
I (0,1): pnp Input stage1)
S (0,1): availability of 70 units from one wafer lot (SLDC)P(0,0.5,1): Price < 5000 Euro for 70 units
Selection Formula: S = E ∙ I ∙ S ∙ P1)
Selection Criteria: S ≥ 0.5
1) If ELDRS sensitivity is not known from literature information about “pnp stage” is considered to be sufficient.
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Part Types used for 1st Measurement Campaign
Part Type Description Manufacturer Picture
LM324AN Operational Amplifier National Semiconductor
LM158AJ Operational Amplifier National Semiconductor
LM311N Comparator National Semiconductor
LM339AN Comparator National Semiconductor
HS9-OP470ARH Radiation Hard Operational Amplifier
Intersil
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Part Types used for 2nd Measurement Campaign
Part Type Description Manufacturer Picture
HS9-139RH Radiation Hard Comparator
Intersil
OP470 Operational Amplifier Analog Devices
OP177 Operational Amplifier Analog Devices
LM336-2.5 Reference Diode National Semiconductor
LM317 Voltage Reference National Semiconductor
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Verification Test Plan
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Irradiation Plan
4 switches
1.5 24
Total # of units tested per part type:• 25 units unbiased
• 25 units biased
0
20 krad80 krad
60 krad
HDR-S LDR-S
40 krad
20 krad
… measurements
5 exposure series
5 units per exposure series biased5 units per exposure series unbiased5th exposure series at 80krad
4th exposure series at 60krad
3rd exposure series at 40krad
2nd exposure series at 20krad
1st exposure series at 0 krad
HDR-S measurement
Entrance control LDR-S measurement
Time (day)
HDR-S: 1 rad(Si) s-1
LDR-S: 10 mrad(Si) s-1
LDR-C: 10 mrad(Si) s-1
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Irradiation Board
RADFETDosemeter
UnbiasedUnits
UnbiasedUnits
BiasedUnits
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Biasing Conditions During Exposure
Operational Amplifier Comparator
V+ = +15V; V- = -15VVin = ~0.5V; Vout = ~ 5VR1 = 1kΩ; R2 = 10kΩ; f = 11
V+ = +15V; V- = -15VVin = ~0.5V; Vout = VOS+R = 15kΩ
Voltage Reference
Vin = +5VR = 2.5 kΩ
Note: Unbiased configuration is achieved by mounting DUTs in antistatic IC Foam that is enwrapped in Aluminium foil.
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Parameters for Investigation of Degradation
Operational Amplifiers and Comparators
Parameter Symbol
Offset Voltage VOS
Quiecent Current +IS / -IS
Bias Currents Ib+ / Ib-
Open Loop Gain AVO
Common Mode Rejection Ratio CMRR
Slew Rate SR
Power Supply Rejection Ratio PSRR
Output Voltage Swing +V0 / -V0
Short Circuit Current ISC
Voltage Regulator
Parameter Symbol
Output Voltage V0
Line Regulation RegLine
Load Regulation RegLoad
Quiescent Current Iq
Drop Out Voltage DOV
Voltage ReferenceParameter Symbol
Output Voltage V0
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Example: Test Circuitry for Open-Loop-Gain, AVO
DUT is operated in a feed back loope.g. Measurement of Open Loop Gain
Certain Output Voltage is forced ∆Vin is measuredAVO is determined
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Test Circuitry for Test board - Part 1
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Test Circuitry for Test board – Part 2
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Preliminary Test Results
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LM339AN: Unbiased
-1,2 -1,0 -0,8 -0,6 -0,4 -0,2 0,0-1,2
-1,0
-0,8
-0,6
-0,4
-0,2
0,0
I b- S
witc
hing
(µ
A)
Ib- LDR-C (µA)
-2 -1 0 1 2 3-2
-1
0
1
2
3
VO
S S
witc
hing
(m
V)
VOS LDR-C (mV)
0 20 40 60 80 100 120 140-1,6
-1,4
-1,2
-1,0
-0,8
-0,6
-0,4
-0,2
0,0
I b-
(µA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 140-5-4-3-2-1012345
V OS
(mV
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
Offset Voltage, Vos
Negative input bias current, Ib
LM339AN: Unbiased
0 20 40 60 80 100 120 1400,0
0,2
0,4
0,6
0,8
1,0
I S+
(mA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 140-1,0
-0,8
-0,6
-0,4
-0,2
0,0
I S-
(mA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0,2 0,4 0,6 0,80,2
0,4
0,6
0,8I S
+ Sw
itchi
ng
(mA)
IS+ LDR-C (mA)
-1,0 -0,8 -0,6 -0,4 -0,2-1,0
-0,8
-0,6
-0,4
-0,2
I S- S
witc
hing
(m
A)
IS- LDR-C (mA)
Negative Supply Current, Is-
Positive Supply Current, IS+
LM339AN: Biased
26
0 20 40 60 80 1000
10
20
30
40
V OS
(mV
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 10 20 30 400
10
20
30
40
VO
S S
witc
hing
(m
V)
VOS LDR-C (mV)
0 20 40 60 80 100 120 1400
20
40
60
80
100
120
CM
RR
(d
B)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
70 80 90 100 110 12070
80
90
100
110
120
CM
RR
Sw
itchi
ng (
dB)
CMRR LDR-C (dB)
Offset Voltage, VOS
Common Mode Rejection Ratio, CMRR
LM339AN: Slew Rate SR
27
0 20 40 60 80 100 120 140-90
-75
-60
-45
-30
-15
0
SR
(V
/µse
c)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
-90 -80 -70 -60 -50 -40 -30-90
-80
-70
-60
-50
-40
-30
SR
Sw
itchi
ng (
V/µ
sec)
SR LDR-C (V/µsec)
0 20 40 60 80 100 120 140-100
-80
-60
-40
-20
0
SR
(V
/µse
c)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
-100 -80 -60 -40 -20 0-100
-80
-60
-40
-20
0
SR
Sw
itchi
ng (
V/µ
sec)
SR LDR-C (V/µsec)
Biased
Unbiased
LM324AN: Short Circuit Current ISC-, Positive Input Bias Current, Ib+
28
0 20 40 60 80 100 120 140-0,4
-0,3
-0,2
-0,1
0,0
I b+
(µA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120-35
-30
-25
-20
-15
I SC
- (m
A)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 140-35
-30
-25
-20
-15
-10
-5
0
I SC-
(mA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 140-0,50
-0,25
0,00
0,25
I b+
(µA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
Biased
Unbiased
LM158AJ: Offest Voltage, VOS, Slew Rate SR
29
0 20 40 60 80 100 120 140-10
-8
-6
-4
-2
0
VO
S (m
V)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 1400,0
0,1
0,2
0,3
0,4
SR
(V
/µse
c)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
Biased
Unbiased
0 20 40 60 80 100 120 140-125
-100
-75
-50
-25
0
VO
S (m
V)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 1400,0
0,1
0,2
0,3
0,4
SR
(V
/µse
c)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
HS9-OP470ARH (radiation hard): VOS, Ib-, IS+, SR
0 20 40 60 80 100
2,55
2,70
2,85
3,00
3,15
3,30
3,45
3,60
I S+
(mA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th Is+
30
Biased
Unbiased
0 20 40 60 80 100 120 1400,00
0,04
0,08
0,12
0,16
0,20
I b-
(µA
)
Dose (kradSi)
1st 2nd 3rd 4th 5th LDR-C
0 20 40 60 80 100 120 1401,50
1,75
2,00
2,25
2,50
SR
(V
/µse
c)
Dose (kradSi)
1st 2nd 3rd 4th 5th SlewRate
0 20 40 60 80 100 120 140-5-4-3-2-1012345
1st 2nd 3rd 4th 5th LDR-C
VO
S (m
V)
Dose (kradSi)
-2
-1,5
-1
-0,5
0
0,5
1
1,5
2
0 20 40 60 80 100 120
Ib+
(µA)
Dose (krad)
1st exposure series
2nd exposure series
3rd exposure series
4th exposure series
5th exposure series
LDR-C Reference
LM311N: Unbiased, ISC-, Ib+, CMRR, AVO
31
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140
CM
RR
(dB
)
Dose (krad)
1st exposure series
2nd exposure series
3rd exposure series
4th exposure series
5th exposure series
LDR-C Reference
-80
-79,5
-79
-78,5
-78
-77,5
-77
-76,5
-76
0 20 40 60 80 100 120
Isc-
(mA)
Dose (krad)
1st exposure series
2nd exposure series
3rd exposure series
4th exposure series
5th exposure series
LDR-C Reference
108
110
112
114
116
118
120
0 20 40 60 80 100 120
Avo
(dB
)
Dose (krad)
1st exposure series
2nd exposure series
3rd exposure series
4th exposure series
5th exposure series
LDR-C Reference
Statistical Analysis with ANOVA
Statistical Analysis of Results
MW1
Slide 33
MW1 Update LegendeWindM, 27/03/2011
Statistical Analysis of Results
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ANOVAHypothesis H0: µreference ≡ µswitching
•F-Test using level of significance α•P value ≥ 0,05 (95% significance level)
µreferenceσ2
refµswitchingσ2
switch
Example: Offset Voltage, VOS for LM339AN
ANOVA: 0 kradµref = -1.34 ; µswitch = -1.31H0: µref = µswitch
F-Test → P-Value: 0.744 H0
ANOVA: 12.2 kradµref = 0.19 ; µswitch = 0.33H0: µref = µswitch
F-Test → P-Value: 0.22 H0
ANOVA:77.1 kradµref = 2.08 ; µswitch = 2.28H0: µref = µswitch
F-Test → P-Value: 0.25 H0
ANOVA: 55.6 kradµref = 1.36 ; µswitch = 1.77H0: µref = µswitch
F-Test → P-Value: 0.21 H0
ANOVA: 34.2 kradµref = 0.83 ; µswitch = 0.89H0: µref = µswitch
F-Test → P-Value: 0.76 H0
0 20 40 60 80 100 120-4
-3
-2
-1
0
1
2
3
4
VO
S
(mV
)
Dose (kradSi)
Result:1.) H0 valid for all investigated dose (95%)2.) Accelerated test method is working properly!
Reduction of Sample Size from 5 → 3
ANOVA: 0 kradµref = -1.258 ; µswitch = -1.257H0: µref = µswitch
F-Test → P-Value: 0.886 H0
ANOVA: 12.2 kradµref = 0.36 ; µswitch = 0.27H0: µref = µswitch
F-Test → P-Value: 0.59 H0
ANOVA:77.1 kradµref = 2.22 ; µswitch = 2.21H0: µref = µswitch
F-Test → P-Value: 0.95 H0
ANOVA: 55.6 kradµref = 1.78 ; µswitch = 1.07H0: µref = µswitch
F-Test → P-Value: 0.16 H0
ANOVA: 34.2 kradµref = 0.88 ; µswitch = 0.64H0: µref = µswitch
F-Test → P-Value: 0.454 H0
0 20 40 60 80 100 120-4
-3
-2
-1
0
1
2
3
4
VO
S
(mV
)
Dose (kradSi)
Conclusion:1.) H0 valid for all investigated doses (95%)2.) Accelerated test method still working!
Conclusion and Outlook10 different part types selected for tests with operational amplifiers, comparators, voltage regulator and voltage reference700 units investigated on ELDRS for a wide range of parametersIn general the accelerated switching test method worked very well for all degraded parameters for all part typesThe variance of a parameter might be a limiting quantity for the methodPreliminary results for LM324AN, LM339N, LM158AJ indicate good comparison of accelerated switching test method with the reference exposureFor LM311N the variance of the CMRR is larger than the degradation (weak-degraded)HS9-OP470ARH (radiation hard) show weak-degraded and degraded parameters For weak-degraded parameters further analysis is neededStatistical analysis with ANOVA looks promisingANOVA will be used to investigate reduction of sample sizeContinue and complete irradiation measurements and data analysisProject will be finished in Summer 2011
ELDRS Website: eldrs.net
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Status: ELDRS Website – Irradiated Components
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References
J. Boch, F. Saigné, R.D. Schrimpf, D.M. Fleetwood, S. Ducret, L. Dusseau, J.P. David, J. Fesquet, J. Gasiot, R. Ecoffet, Effect of Switching From High to Low Dose Rate on Linear Biploar Technology Radiation Response, IEEE-TNS, vol.51 (5), p.2896, October 2004
J. Boch, F. Saigné, R.D. Schrimpf, J.-R. Vaillé, L. Dusseau, S. Ducret, M. Bernard, E. Lorfèvre, and C. Chatry, Estimation of Low-Dose-Rate Degradation on Bipolar Linear Integrated Circuits Using Switching Experiements, IEEE-TNS, vol. 52 (6), p. 2616, December 2005
J. Boch, Y. Gonzalez Velo, F. Saigné, N. J-H. Roche, R.D. Schrimpf, J.-R. Vaillé, L. Dusseau, C. Chatry, E. Lorfèvre, R. Ecoffet, A.D. Touboul, The use of a Dose-Rate Switching Technique to Characterize Bipolar Devices, IEEE-TNS, vol. 56 (6), p. 3347, December 2009
L. Dusseau, M. Bernard, J. Boch, Y. Gonzalez velo, N. Roche, E. Lorfèvre, F. Bezerra, P. Calvel, R. Marec, F. Saigné, Review and Analysis of the Radiation-Induced Degradation Observed for the Input Bias Current of Linear Integrated Circuits, IEEE-TNS, vol. 55 (6), p.3174, December 2008
Acknowledgments
The support by National Semiconductor (Kirby Kruckmeyer )and Intersil (Nick van Vonno) with part types for testing is acknowledged! The support by Tyndall (Aleksander Jaksic) with RADFETS for reference measurements is acknowledged!The project is contracted by the European Space Agency (ESA) under Contract No. 22051/NL/PA (GSTP) and supported by the Austrian Federal Ministry for Transport, Innovation and Technology. National coordination is done by the Austrian Promotion Agency FFG.
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ELDRS Website: eldrs.net
42ESA/ESTEC, 29 March 2011