Efficient Power Conversion Corporation · Q 1 + C sh L RFck L e C s Z load C am1 L am C am2 Filter...
Transcript of Efficient Power Conversion Corporation · Q 1 + C sh L RFck L e C s Z load C am1 L am C am2 Filter...
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The eGaN® FET
Journey Continues
Performance Evaluation of eGaN® FETs in Low Power High
Frequency Class E Wireless Energy Converter
Michael de Rooij
Efficient Power Conversion Corporation
www.epc-co.com EPC - The Leader in eGaN® FETs PCIM Asia 2014 2
Agenda
• Why GaN?
• Topologies Evaluated
• Wireless Power Figure of Merit
• Device Comparison
• Experimental Verification
• Summary
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Why eGaN FETs for Wireless
• Low CISS and COSS
• Low RDS(on) for equal voltage rating
• Low profile
• Gate Drivers available:
• LM5113 • LM5114 • UCC27611
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Coil Simplification
Lsrc Ldev
Cdevs
RDCload
Cout
Ldevs
Cdevp Zload
Coil Set
Simplified representation of coil-set for easy comparison between topologies
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Single Ended Class E
VDD
Ideal Waveforms
VDS ID
time
3.56 x VDD
V / I
50%
Q1
+
Csh
Cs Le LRFck
Zload
• Switch voltage rating ≥ 3.56·Supply (VDD).
• COSS “absorbed” into matching network.
• Susceptible to load variation - high FET losses.
• Coil voltage ≈ 0.707·VDD [VRMS].
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Class E Topology Variations
VDD
Q1
+
Csh
Cs Le LRFck
Zload
Cam1
Lam
Cam2
Filter Network
Q1
+
Csh1
Cs Le LRFck Zload
Q2
Csh2
LRFck
• Impedance matching filter for load variations.
• Differential mode:
• Increases output power.
• Reduced voltage harmonics.
• Coil voltage ≈ 1.414·VDD [VRMS].
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ZVS Class D
+ VDD
Cs Q2
Q1 Zload
LZVS
CZVS
V / I
VDS ID
time
VDD
50%
Ideal Waveforms ZVS tank
• Switch voltage rating = Supply (VDD).
• COSS voltage is transitioned by the ZVS tank .
• ZVS tank circuit does not carry load current.
• Coil voltage = ½·VDD [VRMS].
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Class E Analysis Comparison
2
6
10
14
18
80
85
90
95
100
0 10 20 30 40 50
Ou
tpu
t P
ow
er
[W]
Effi
cie
ncy
[%
]
DC Load Resistance [Ω]
eGaN FET Eff.
MOSFET Eff.
eGaN FET Pout
MOSFET Pout
EPC2012
MOSFET 95.6%
98.5 %
85.2%
94.4%
Peak Power Device losses = 279 mW No Heat-Sink Required
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Class E Device Comparison
FoMWPT [nC·mΩ]
0
200
400
600
800
1000
1200
1400
1600
EP
C2012
MO
SF
ET
SE-CE
SE-CE
GDGDS(on)WPT QQRFOM
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600
Devic
e P
ow
er
[mW
]
RDS(on) [mΩ]
MOSFET
eGaN FET
Gate Power
dominant
Conduction Loss
dominant
Lowest Power Dissipation
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Class E Experimental Setup
Gate Driver LM5113
eGaN® FET EPC2012
Coil Connection RF Choke LRFck
Extra Inductor Le
Shunt Capacitor Csh
Gate Driver
MOSFET
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ZVS Class D Experimental Setup
Gate Driver
ZVS Capacitor CZVS
eGaN FET EPC8009
Coil Connection
ZVS Inductor LZVS
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50
55
60
65
70
75
80
85
0 5 10 15 20 25 30 35 40
Eff
icie
ncy [
%]
Output Power [W]
50
55
60
65
70
75
80
85
0 5 10 15 20 25 30 35 40
Eff
icie
ncy [
%]
Output Power [W]
Peak Performance Results
Fixed DC Load Resistance
η EPC8009 ZVS-CD
η MOSFET 2 ZVS-CD
η MOSFET 3 ZVS-CD
η EPC2012 SE-CE
η MOSFET 1 SE-CE
Variable Supply Voltage
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64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
Load Variation Results
η EPC8009 ZVS-CD
η MOSFET 2 ZVS-CD
η MOSFET 3 ZVS-CD η EPC2012 SE-CE
η MOSFET 1 SE-CE
Coil becomes Inductive
Coil becomes Capacitive
Fixed Supply Voltage
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Load Regulation Results
64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
64
68
72
76
80
84
10 15 20 25 30 35 40 45 50
Eff
icie
ncy [
%]
DC Load Resistance [Ω]
η EPC8009 ZVS-CD
η MOSFET 2 ZVS-CD
η MOSFET 3 ZVS-CD
η EPC2012 SE-CE
η MOSFET 1 SE-CE Design Load
Peak Coil η
Fixed Load Voltage
Coil becomes Inductive
Coil becomes Capacitive
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Class E Thermal Performance
MOSFET UCC27511 eGaN FET LM5113
Pout = 29 W in 20.2 Ω
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Class D Thermal Performance
EPC8009 LM5113 MOSFET 2 LM5113 MOSFET 3 LM5107
Pout = 17 W in 23.6 Ω Pout = 36 W in 23.6 Ω
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Summary
eGaN® FETs are disruptive in wireless energy:
• Enable wireless power
• Yield higher efficiency than MOSFETs
• Can operate at 6.78 MHz and 13.56 MHz
• Are low profile
• Easy to use
• Drive new topologies e.g. ZVS Class D
• Growing support e.g. gate drivers and products use them.
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The end of the road
for silicon…..
is the beginning of
the eGaN FET
journey!