非平面型元件統合式服務平台 - TSRINDL Process node Equipment Recipe Laser Marker M11 1....

非平面型元件統合式服務平台

8” Bulk FinFET Process

CONFIDENTIAL 1

FOX

Gate

Si

2014/06/04

DisclaimerNDL SHALL NOT BE LIABLE FOR TECHNICAL OR EDITORIAL

ERRORS OR OMISSIONS CONTAINED HEREIN; NOR FORINCIDENTAL OR CONSEQUENTIAL DAMAGES RESULTING FROMTHE FURNISHING, PERFORMANCE, OR USE OF THIS MATERIAL.THE INFORMATION IN THIS MANUAL IS SUBJECT TO CHANGEWITHOUT ANY PRIOR NOTICE FOR THE PURPOSES OF IMPROVINGTHE PERFORMANCE AND FUNCTIONALITY OF ITS PRODUCTS.

No one is allowed to copy or distribute the whole or a part of this document without prior written permission of NDL.

NDL here means National Nano device Laboratories.

CONFIDENTIAL 2

Purpose

• This document is intended to help users who want toapply NDL 8” bulk FinFET baseline process to dofabrication.

• Please be notified that users should follow the processguideline in this document to do fabrication without anyviolation.

Contact information : [email protected] (陳旻政組長)

CONFIDENTIAL 3

CONTENTS

CONFIDENTIAL 4

Disclaimer ..………………………………………………………………... 02Purpose …..…………………………………………………………………. 03Revision History …………………………………………………………. 05

Process Flow Chart …………………………………………….......... 06Process of Records …………………………………………….......... 07Appendix A ‐ Equipment layout ……………………………….... 142Appendix B ‐ List of recipes ………………………………………... 143Appendix C ‐ Flow chart of process ………………………….... 153Appendix D ‐ Run card of process ………………………………. 154Appendix E ‐ Assistance list ………………………………………... 157Appendix F ‐ Platform performance …..……………………... 158

Revision History

• 2013/12/16 Release Version 1.• 2014/05/28 Release Version 2.

CONFIDENTIAL 5

Process Flow Chart

6

TEOSTEOSTEOS

Wafer clean HM SiN dep. &Active patterning

Si trench etching HDPCVD OX dep. &RT region patterning

RT etching

Silicide mask etching ILD dep. &Contact patterning

Contact etching Metal dep. &Metal pad patterning

Metal pad etching

PR

E‐Beam

HDP

Al‐Cu

HM remove &Fin etching back

Gox / TiN Gate dep. &Gate patterning

Gate etchingS/D Imp. & AnnealOxford ox dep. & Silicide mask patterning

PR

E‐Beam

P‐type Si

HM HM

TiN

HM

SiO2

n‐ n‐ n‐ n‐ n‐ n‐

PR

SiO2 SiO2

Pad ox

SiON

PR

PR

E‐Beam

Imp.

n‐ n‐

NiSix NiSix

PR

E‐Beam E‐Beam

E‐Beam

Process of Record #1

CONFIDENTIAL 7

NDL Process node

Equipment

Recipe

Laser Marker

M11

1. Surface of the wafers should be clean.

Equipment : NAAcceptance criteria :Laser mark = Group name (ex:BIO) + Serial number (1~) +Wafer number (1~25), see Fig. 1

Fig. 1

Check point before process Check point after process

BIO1 - 01NA


CONFIDENTIAL 8

NDL process node

Equipment

Recipe


Clean-SC-1

C10-SC1

Temp = 45 Time = 10 min

1. The status of the equipment should be in normal running mode.

2. Parameters checkNH4OH : H2O2 : H2O = 1:1:5

Equipment : NAAcceptance criteria : The surface of the wafers should be clean.


CONFIDENTIAL 9

NDL process node

Equipment

Recipe


Coating-(E-beam-SB350)

G-L17

Recipe = 2-2COT-P05


Equipment : N&K1500 (M23)Acceptance criteria : Thickness = 3850Å ± 30Å


CONFIDENTIAL 10

NDL process node

Equipment

Recipe


Exposure-(E-Beam-SB350)

L19

Job Name = Zero mark


Equipment : NAAcceptance criteria : NA

Fig. 2


CONFIDENTIAL 11

NDL process node

Equipment

Recipe


Development-(E-Beam-SB350)

G-L17

Recipe = 2-4DEV-P05


Equipment : In-line SEMAcceptance criteriaThe picture should look like Fig.2


CONFIDENTIAL 12

NDL process node

Equipment

Recipe


Etch-Poly

E10

Recipe = NDL_Zeromark_deep_Si_PM2


Equipment : P10Acceptance criteria :Depth > 1.1 um


CONFIDENTIAL 13

NDL process node

Equipment

Recipe


Etch-PR(8")

E10

Recipe = NDL_PR_removal_PM4



2. Parameters checkTime = 120 sec


CONFIDENTIAL 14

NDL process node

Equipment

Recipe


WetEtch-PR(8")

C10-PR-SPM

Material = H2SO4Temp = 125 Time = 600 sec

Equipment : OMAcceptance criteria :The photo resistor should be clean under microscope.

1. The status of the equipment should be in normal running mode

2. Parameters checkH2SO4 : H2O2 = 200 : 1


CONFIDENTIAL 15

NDL process node

Equipment

Recipe


Clean STD+HF

G-STD+HF(8")

SC - 1 = 45 / 10minSC - 2 = 45 / 10minDHF = 25 / 1min

Equipment : NAAcceptance criteria : The surface of the wafers should be clean.


2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6DHFHF : H2O = 1:50


CONFIDENTIAL 16

NDL process node

Equipment

Recipe


V-DryOxide

T13

Recipe = Dr 900300


2. Parameters checkDry oxide, 900, 300Å

Equipment : N&K 1500Acceptance criteria :Oxide thickness = 300Å ± 5%

CONFIDENTIAL 17

P-type Bulk Si wafer

Deposition：Sac Oxide 300 Å

Dry‐Oxide

Part.0 ：Wafer start

Process of Record #11‐NMOS

CONFIDENTIAL 18

NDL process node

Equipment

Recipe


Implant

S06

DOSE : 5E13Energy :45KSource : BF2

49+



Process of Record #11‐PMOS

CONFIDENTIAL 19

NDL process node

Equipment

Recipe


Implant

S06

DOSE : 1E14Energy :45KSource : P31+



CONFIDENTIAL 20

NMOS Imp.：BF249+ , Energy = 45keV, Dose = 5E13 cm‐2

PMOS Imp.：P31+ , Energy = 45keV, Dose = 1E14 cm‐2

Part.0 ：Wafer start


Dry‐Oxide


CONFIDENTIAL 21

NDL process node

Equipment

Recipe


Clean STD

G-STD(8")

SC - 1 = 45 / 10minSC - 2 = 45 / 10min


2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6

Equipment : NAAcceptance criteria :The surface of the wafers should be clean.


CONFIDENTIAL 22

NDL process node

Equipment

Recipe


V-Wet-Oxide

T13

Recipe = W1KC20HA


2. Parameters checkWet oxide, 1000, 2000Å

Equipment : N&K 1500Acceptance criteria :Oxide thickness = 2000Å ± 10%

CONFIDENTIAL 23

Part.0 ：Wafer start (PMOS)


Dry‐Oxide

Drive in： 1000oC, 2000 Å Wet‐Oxide

P ‐


CONFIDENTIAL 24

NDL process node

Equipment

Recipe


WetEtch-BOE

C05-10

Tank = BOETemp = 25 Time = 180 sec


Equipment : NAAcceptance criteria :The back of the wafer should be water resistant.

CONFIDENTIAL 25

Part.0 ：Wafer start (PMOS)


P ‐

Etch (Wet; BOE)：Oxide


CONFIDENTIAL 26

NDL process node

Equipment

Recipe


Clean STD+HF

G-STD+HF(8")

SC - 1 = 45 / 10minSC - 2 = 45 / 10minDHF = 25 / 30sec

Equipment : NAAcceptance criteria : The surface of the wafer should be clean.




CONFIDENTIAL 27

NDL process node

Equipment

Recipe


V-DryOxide

T13

Recipe = Dr 80050A



Equipment : NAAcceptance criteria : Oxide thickness = 50Å ± 5%

CONFIDENTIAL 28

總體示意圖目前結構

截面方向


Deposition：Pad Oxide 50 Å

Part.1 ：Fin structure fabrication

Dry‐Oxide


CONFIDENTIAL 29

NDL process node

Equipment

Recipe


Clean

G-STD

SC - 1 = 45 / 10minSC - 2 = 45 / 10min

Equipment : NAAcceptance criteria : The surface of the wafer should be clean.




CONFIDENTIAL 30

NDL process node

Equipment

Recipe


PESiN

T26

Recipe = Nitride 500A


Equipment : N&K 1500Acceptance criteria : SiN thickness = 500Å ± 5%

CONFIDENTIAL 31


截面方向


Deposition：Nitride (HM) 500 Å


PESiNDry‐Oxide


CONFIDENTIAL 32

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-2COT-CAN




CONFIDENTIAL 33

NDL process node

Equipment

Recipe



L19

Job Name = NDL_yfhou_bulkfinfetPORV1_act


2. Parameters checkLayer 43, dose=90 (Pad)Layer 51, dose=64 (30-400nm)


CONFIDENTIAL 34


截面方向


Litho：PR(‐) Coating + Exposure (E‐beam)


PESiNDry‐Oxide

Photo Resist

E-Beam


CONFIDENTIAL 35

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-4DEV-CAN


Fig. 3

Equipment : In-line SEMAcceptance criteria :The picture should look like Fig.3

CONFIDENTIAL 36


截面方向


Litho：Development


PESiNDry‐Oxide

PR

30 nm


CONFIDENTIAL 37

NDL process node

Equipment

Recipe


PR-trimming

E10


2. Must check etching rate first.

Recipe = NDL_P.R_trimmming_R02_PM2

Equipment : In-line SEMAcceptance criteria : Active photo width ≒ 22 nm(依個人所需)

CONFIDENTIAL 38


截面方向



PESiNDry‐Oxide

PR

Etch (Dry)：PR trimming

23 nm


CONFIDENTIAL 39

NDL process node

Equipment

Recipe


Etch-Poly

E10

Recipe = NDL_bulkfinfet_STI_PM2


2. Parameters checkStep 1HM SiN etching rate ≒ 45Å/1secTime ≒ 12secStep 2 Etch-PRStep 3Si trench etching rate ≒ 40Å/1secTime ≒ 50sec

Equipment : P10Acceptance criteria :STI depth ≒ 2500Å

CONFIDENTIAL 40


截面方向


Etch (Dry)：SiN + PR remove + Si


PR


CONFIDENTIAL 41

NDL process node

Equipment

Recipe


WetEtch-PR

C10-PR-SPM


Equipment : OMAcceptance criteria : The photo resistor should be clean under microscope.



CONFIDENTIAL 42


截面方向


Etch：PR remove


Active AEI

CONFIDENTIAL 43

Top view Cross section

Si

SiN (HM)

100nm

Si

SiN (HM)

StructureDevice


CONFIDENTIAL 44

NDL process node

Equipment

Recipe


Clean STD

G-STD

SC - 1 = 45 / 10 minSC - 2 = 45 / 10 min

Equipment : NAAcceptance criteria :The surface of the wafer should be clean.




CONFIDENTIAL 45

NDL process node

Equipment

Recipe


V-DryOxide

T13

Recipe = Dr 80050A



Equipment : NAAcceptance criteria :Oxide thickness = 50Å ± 5%

CONFIDENTIAL 46


截面方向



Deposition：Linear Oxide 50 Å


CONFIDENTIAL 47

NDL process node

Equipment

Recipe


HF-Dip

C10-DHF

DHF = 25 / 30 sec


2. Parameters checkDHFHF : H2O = 1:50

Equipment : NAAcceptance criteria : The back of the wafer should be water resistant.

CONFIDENTIAL 48


截面方向



Etch (Wet; HF)：Linear oxide


CONFIDENTIAL 49

NDL process node

Equipment

Recipe


V-DryOxide

T13

Recipe = Dr 80050A



Equipment : NAAcceptance criteria :Oxide thickness = 50Å ± 5%

CONFIDENTIAL 50


截面方向



Deposition：Linear Oxide 50 Å


CONFIDENTIAL 51

NDL process node

Equipment

Recipe


Clean STD+HF

G-STD+HF(8")

SC - 1 = 45 / 10 minSC - 2 = 45 / 10 minDHF = 25 / 30 sec

Equipment : NAAcceptance criteria : The back of the wafer should be water resistant.




CONFIDENTIAL 52

NDL process node

Equipment

Recipe


HDPCVD-(Frontend8")

T28

Recipe : NDL-bulkfinfet


2. Parameters checkHDPFilm : HDPSiOHDPSiO : 3000 Å

Equipment : N&K 1500Acceptance criteria :Oxide Thickness = 3000Å ± 5%

CONFIDENTIAL 53


截面方向


Deposition：HDPCVD‐SiOx 3000 Å


HDPCVD‐Oxide

CONFIDENTIAL 54


截面方向



HDPCVD‐Oxide

Deposition：HDPCVD‐SiOx 3000 Å

HDP dep.

CONFIDENTIAL 55

Cross section ‐ SEM Cross section ‐ FIB

Si

FOX

50 nm

Si

FOX

DeviceStructure


CONFIDENTIAL 56

NDL process node

Equipment

Recipe


Etch-Oxide(8")

E01

Recipe = NDL_bulkfinfet_OX_PM3


2. Must check etching rate first.3. Parameters Check

Oxide etching rate ≒ 77Å / 1secTime ≒ 16 sec

Equipment : N&K 1500Acceptance criteria :Check scribe line such as Fig. 4.HDPSiO≒2000~2100 Å ( Exposed SiN HM )

Fig. 4

Check here (Scribe Line)

CONFIDENTIAL 57


截面方向


Etch (Dry)：Oxide [until “Nitride” appears]


CONFIDENTIAL 58



HDPCVD‐Oxide

Etch (Dry)：Oxide [until “Nitride” appears] 總體示意圖目前結構

截面方向


CONFIDENTIAL 59

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-2COT-P05




CONFIDENTIAL 60

NDL process node

Equipment

Recipe



L19

Job Name = NDL_yfhou_bulkfinfetPORV1_RT


2. Parameters checkLayer 20, dose=80 (Pad)


CONFIDENTIAL 61



HDPCVD‐Oxide

LIT：PR(+) Coating + Exposure

Remark ：RT (Reverse‐Tone) LIT defines the region of “Pad” (clear) to etch oxide.

RT RT

Photo Resist

E-Beam


截面方向


CONFIDENTIAL 62

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-4DEV-P05


Equipment : In-line SEMAcceptance criteriaThe picture should look like Fig.5

Fig. 5


CONFIDENTIAL 63

NDL process node

Equipment

Recipe


Etch-Oxide(8")

E01



Oxide etching rate ≒ 77Å / 1secTime ≒ 24 sec

Equipment : N&K 1500Acceptance criteria :Check NK PAD (As Fig.6)Si sub / SiN ≒ 200 Å (GOF=99%)


Fig. 6

NK PADNK PAD

CONFIDENTIAL 64



HDPCVD‐Oxide

Etch (Dry)：Oxide

Photo Resist


截面方向


CONFIDENTIAL 65

NDL process node

Equipment

Recipe


Etch-PR(8")

E10

Recipe = NDL_PR_removal_PM4





CONFIDENTIAL 66

NDL process node

Equipment

Recipe


WetEtch-PR(8")

C10-PR-SPM


Equipment : OMAcceptance criteria :The photo resistor should be clean under microscope.



CONFIDENTIAL 67



Etch：PR remove 總體示意圖目前結構

截面方向

RT AEI

CONFIDENTIAL 68

0.2 um

FOX Active Pad

RT

Si

Top view Cross section ‐ SEM

RT

FOX


CONFIDENTIAL 69

NDL process node

Equipment

Recipe


HF-Dip(8")

C10-DHF

DHF = 25 / 10 sec


2. Parameters checkDHFHF : H2O=1:50

Equipment : NAAcceptance criteria : NANote : Need to be continue with next step.


CONFIDENTIAL 70

NDL process node

Equipment

Recipe


WetEtch-H3PO4

C05-09

Tank = H3PO4Time : 60 minTemp : 150


2. Add H2SiF6(六氟矽酸) is better.

Equipment : N&K 1500Acceptance criteria :1. Check NK PAD

Si sub / SiN ≒ 10Å ± 10Å(GOF=99%)

2. Check HDP oxide residue.

CONFIDENTIAL 71


截面方向


Etch (Wet; H3PO4)：Nitride



CONFIDENTIAL 72

NDL process node

Equipment

Recipe


HF-Dip(8")

C10-DHF

DHF = 25


2. Must check etching rate first.3. Parameters check

DHF HF:H2O=1:50

Equipment : N&K 1500Acceptance criteria :Check HDP residue to define fin height. (As Fig.8)SEM cross section like Fig.7

Fig. 8

Check here (Scribe Line)Fig. 7

50 nm

FOX

Si

13 nm

CONFIDENTIAL 73


截面方向


Etch (Wet; HF)：Oxide



CONFIDENTIAL 74

NDL process node

Equipment

Recipe


Clean-RCA(8")

G-RCA(8")


2. Parameters checkSC -1 NH4OH : H2O2 : H2O = 1:1:5SC -2HCl : H2O2 : H2O = 1:1:6SPMH2SO4 : H2O2 = 4:1 DHFHF : H2O = 1:50


SC - 1 = 45 / 10 minSC - 2 = 45 / 10 minSPM = 125 / 10 minDHF = 25 / 10 sec


CONFIDENTIAL 75

NDL process node

Equipment

Recipe


V-SiON

T13

Recipe = SiON80020


Equipment : NAAcceptance criteria : Oxide thickness = 20Å ± 5ÅNote : Need to be continue with next step.


CONFIDENTIAL 76

NDL process node

Equipment

Recipe


ALD-CVD

RDT001

Recipe = TiN‐336C


2. Parameters checkTiN = 100Å

Equipment : Metal-Rs (M19)Acceptance criteria : Rs≒180~190 Ω/Note : Need to be continue with next step.


CONFIDENTIAL 77

NDL process node

Equipment

Recipe


PVD-TiN(8")

T29


2. Parameters checkTiN = 400Å

Recipe = R1_TiN_15KW_W/O_BIAS_80 sec

Equipment : Metal-Rs (M19)Acceptance criteria : Rs≒30Ω/


CONFIDENTIAL 78

截面方向


Deposition：SiON + ALD‐TiN + PVD‐TiN

Part.2 ：Gate fabrication

TiNSiON


CONFIDENTIAL 79

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-2COT-NEB




CONFIDENTIAL 80

NDL process node

Equipment

Recipe



L19

Job Name = NDL_yfhou_bulkfinfetPORV1_gate_NEB


2. Parameters checkLayer 46, dose=10 (Pad)Layer 11, dose=13 (50-400nm)



CONFIDENTIAL 81

截面方向


Photo Resist

Litho：PR(‐) Coating + Exposure (E‐beam)


TiNSiON

E-Beam


CONFIDENTIAL 82

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-4DEV-NEB


Equipment : In-line SEMAcceptance criteria : The picture should look like Fig.9

Fig. 9

S/D S/D

Gate


CONFIDENTIAL 83

截面方向


Litho：Development

PR


TiNSiON


CONFIDENTIAL 84

NDL process node

Equipment

Recipe


Etch-PR trimming(8")

E11

Recipe = NDL_PR_trimming_R01_PM2


2. Must check etching rate first.

Equipment : In-line SEMAcceptance criteria : Gate photo width ≒ 50 nm(依個人所需)


CONFIDENTIAL 85

截面方向


Etch (Dry)：PR trimming

PR


TiNSiON

50 nm


CONFIDENTIAL 86

NDL process node

Equipment

Recipe


Etch-Metal(8")

E11

Recipe = NDL_Metal_gate_TiN_R13_EP_PM2


2. Must check etching rate first.3. Parameters check :

ME = 10 secOE = 1 sec

Equipment : Low-temp measurement (M17)Acceptance criteria : Check scribe line is open (Fig. 10)

Fig. 10

Check here (Scribe Line)

Recipe fine tune 中


CONFIDENTIAL 87

截面方向


Etch (Dry)：TiN + SiON

PR


TiNSiON


CONFIDENTIAL 88

NDL process node

Equipment

Recipe


Etch-PR(8"backend)

E11

Recipe = NDL_PR_strip_240s_PM1





CONFIDENTIAL 89

截面方向


Etch：PR remove


TiNSiON

Gate AEI

CONFIDENTIAL 90

Top view ‐ TEM Cross section ‐ TEM

20 nm

FOX

Si

TiN

12 nm

Si Gox : 22Å

20 nm

TiN54 nm

S/D S/D

Gate

S/D S/D

Gate

Process of Record #51‐NMOS

CONFIDENTIAL 91

NDL process node

Equipment

Recipe


Implant

S06

DOSE : 5E14Energy :10Source : As75+



Process of Record #52‐PMOS

CONFIDENTIAL 92

NDL process node

Equipment

Recipe


Implant

S06

DOSE : 5E15Energy :10Source : BF249+



CONFIDENTIAL 93

Part.3 ：Implantation & Activation


TiNSiON

Imp.：

Source Dose Energy (keV) Tilt TwistN As75+ 5E14 10 0 0

P BF249+ 5E15 10 0 0


截面方向


CONFIDENTIAL 94

NDL process node

Equipment

Recipe


RTA-Metal

*

Recipe = 8RTA800


2. Parameters checkTemp : 800 Time : 30 sec


CONFIDENTIAL 95

Part.3 ：Implantation & Activation


TiNSiON

Anneal：800∕ 30sec ∕ N2

N‐ N‐

Example: NMOS


截面方向

Device

CONFIDENTIAL 96

Cross section ‐ TEM

GateS/D

Top view ‐ FIB

Gox = 18 nm

Si

TiN


CONFIDENTIAL 97

NDL process node

Equipment

Recipe


Oxford-PESiO2

T19

Recipe = PESiO2 500Å


Equipment : N&K 1500Acceptance criteria :The PESiO2 thickness = 500Å ±100Å


CONFIDENTIAL 98

截面方向

Part.4 ：Silicide


TiNSiONN‐ N‐

Deposition：Oxford‐PESiO2

SiO2


CONFIDENTIAL 99

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-2COT-P05




CONFIDENTIAL 100

截面方向

Part.4 ：Silicide


TiNSiONN‐ N‐

SiO2


Remark ：The profile is the same as “RT” layer.

Photo Resist

E-Beam


CONFIDENTIAL 101

NDL process node

Equipment

Recipe



L19

Job Name = NDL_yfhou_bulkfinfetPORV1_silicide


2. Parameters checkLayer 20, dose=125 (Pad)



CONFIDENTIAL 102

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-4DEV-P05


Equipment : In-line SEMAcceptance criteria :The picture should look like Fig.11

Fig. 11


CONFIDENTIAL 103

截面方向

Part.4 ：Silicide


TiNSiONN‐ N‐

SiO2

LIT：Development

Remark ：The profile is the same as “RT” layer.

PR


CONFIDENTIAL 104

NDL process node

Equipment

Recipe


Etch-Oxide(8")

E11



Oxide etching rate ≒ 66 Å / secTime = 6 sec




CONFIDENTIAL 105

截面方向

Part.4 ：Silicide


TiNSiONN‐ N‐

SiO2

PR

Etch (Dry)：SiO2


CONFIDENTIAL 106

NDL process node

Equipment

Recipe


Clean-BOE-Backend

*

Tank = BOE



BOE HF : H2O = 1:50Time = 120 sec

Equipment : Low-temp measurement (M17)Acceptance criteria : Check active pad open.SEM should look like Fig.12.

Fig. 12


CONFIDENTIAL 107

NDL process node

Equipment

Recipe


Etch-PR(8"backend)

E11






CONFIDENTIAL 108

截面方向

Part.4 ：Silicide

Etch：PR remove

SiO2


TiNSiONN‐ N‐


CONFIDENTIAL 109

NDL process node

Equipment

Recipe


PVD-multilayer(8")

T29

Recipe = ICP+Ni 100Å+Ti 100Å


2. Parameters checkICPF1_ETG_9sec_450/200WNi 100ÅR1_Ni_1.5kw25sccmAr10secTi 100ÅF3_Ti_DC_128.4sec_10nm


SiO2

CONFIDENTIAL 110

Part.4 ：Silicide


截面方向

Deposition：PVD‐ Ni + Ti


TiNSiONN‐ N‐

NiTi


CONFIDENTIAL 111

NDL process node

Equipment

Recipe


RTA-Metal

*

Recipe = 8RTA250

1. The status of the equipment should be in normal running mode ( Thermocouple ).

2. Parameters checkTemp : 250 Time : 30s


CONFIDENTIAL 112

Part.4 ：Silicide


截面方向

RTA (1st)：250∕ 30sec.【Ni‐silicide formation】

SiO2


TiNSiON

NiTi

NiSiNiSi

CONFIDENTIAL 113

Process of Record #63NDL process node

Equipment

Recipe


Clean-H2SO4-Backend

Material = H2SO4Time = 10 minTemp = 120


2. Parameters checkH2SO4 : H2O2 =3 : 1

*

Equipment : Low-temp measurement (M17)Acceptance criteria : Check active pad open or not (I ≒1E-3~1E-4)Note : Need to be continue with next step.

CONFIDENTIAL 114

Part.4 ：Silicide


截面方向

BEOL H2SO4：125∕ 10min. (1:3)

SiO2


TiNSiON NiSiNiSi


CONFIDENTIAL 115

NDL process node

Equipment

Recipe


RTA-Metal

*


Recipe = 8RTA400

1. The status of the equipment should be in normal running mode. ( Thermocouple ).

2. Parameters checkTemp : 400 Time : 30 sec

CONFIDENTIAL 116

Part.4 ：Silicide


截面方向

SiO2


TiNSiON NiSiNiSi

RTA (2nd)：400∕ 30sec.


CONFIDENTIAL 117

NDL process node

Equipment

Recipe


Oxford-PESiO2

T19

Recipe = PESiO2 3000Å


Equipment : NAAcceptance criteria : PESiO2 thickness = 3000Å±10%

CONFIDENTIAL 118


TiNSiON

SiO2

Part.5 ：Contact

Deposition：Oxford‐PESiO2 3000Å

PE‐SiO2 PE‐SiO2

總體示意圖

截面方向

NiSiNiSi

PE‐SiO2


CONFIDENTIAL 119

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-2COT-P05




CONFIDENTIAL 120

NDL process node

Equipment

Recipe



L19

Job Name = NDL_yfhou_bulkfinfetPORV1_contact


2. Parameters checkLayer 50, dose=120 (5umx5um)


CONFIDENTIAL 121


TiNSiON

SiO2

Part.5 ：Contact

PE‐SiO2 PE‐SiO2

Photo Resist

E-Beam


NiSiNiSi

PE‐SiO2

Fig. 13-1 ( V2 contact )


CONFIDENTIAL 122

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-4DEV-P05


Equipment : In-line SEMAcceptance criteria : The picture should look like Fig.13

Fig. 13-2( V1 contact )

CONFIDENTIAL 123


TiNSiON

SiO2

Part.5 ：Contact

PE‐SiO2 PE‐SiO2

總體示意圖

截面方向

Photo Resist

LIT：Development

NiSiNiSi

PE‐SiO2


CONFIDENTIAL 124

NDL process node

Equipment

Recipe


Etch-Oxide(8")

E11



Oxide etching rate ≒ 66 Å / 1secTime ≒48 sec




CONFIDENTIAL 125

NDL process node

Equipment

Recipe


Clean-BOE-Backend

*

Tank = BOE 1:50Time = 400sec


Equipment : FIB Acceptance criteria : The picture should look like Fig.14

Fig. 14

Si

OX 2834Å

PR 2094ÅContact

hole

CONFIDENTIAL 126


TiNSiON

SiO2

Part.5 ：Contact 總體示意圖

截面方向

Photo Resist

Etch (Dry)：PE‐SiO2 【with BOE dip after‐then】

NiSiNiSi

PE‐SiO2


CONFIDENTIAL 127

NDL process node

Equipment

Recipe


Etch-PR(8"backend)

E11





CONFIDENTIAL 128


TiNSiON

SiO2

Part.5 ：Contact 總體示意圖

截面方向

Etch：PR remove

NiSiNiSi

PE‐SiO2

Contact AEI

CONFIDENTIAL 129

Top view ‐ SEM Cross section ‐ FIB

Si

OX 2834 Å

PR 2094 Å

Contact hole


CONFIDENTIAL 130

NDL process node

Equipment

Recipe


PVD-multilayer(8")

T29


2. Parameters checkICPF1_ETG_9sec_450/200WTi 50ÅF3_Ti_DC_64.2sec_5nm

Equipment : NAAcceptance criteria : Thickness = 3000Å ± 10%

Recipe = ICP + Ti 50 Å + Al 3000 Å

CONFIDENTIAL 131


TiNSiON

SiO2

Part.6 ：Metal 總體示意圖

截面方向

NiSiNiSi

Ti

Deposition：PVD‐ Ti + AlSiCu

AlSiCu AlSiCuAlSiCu

PE‐SiO2

Ti


CONFIDENTIAL 132

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-2COT-NEB




CONFIDENTIAL 133

NDL process node

Equipment

Recipe



L19

Job Name = NDL_yfhou_bulkfinfetPORV1_metal


2. Parameters checkLayer 10, dose=80


CONFIDENTIAL 134


TiNSiON

SiO2


截面方向

NiSiNiSi

TiAlSiCu AlSiCu

AlSiCu

PE‐SiO2

Ti

E-Beam LIT：PR(‐) Coating + Exposure

Photo Resist


CONFIDENTIAL 135

NDL process node

Equipment

Recipe



G-L17

Recipe = 2-4DEV-NEB


Equipment : OMAcceptance criteriaThe picture should look like Fig.15

Fig. 15

CONFIDENTIAL 136


TiNSiON

SiO2


截面方向

NiSiNiSi

TiAlSiCu AlSiCu

AlSiCu

PE‐SiO2

Ti

LIT：Development

PR


CONFIDENTIAL 137

NDL process node

Equipment

Recipe


Etch-Metal(8")

E11

Recipe = NDL_bulkfinfet_Al_metal_pad_PM2

Equipment : Low-temp measurement (M17)Acceptance criteria : Check metal pad open.


2. Parameters CheckME Time = 40 sec(End point)OE Time = 10 sec (E.P. 停在約 20~25處)

Fig. 16

Check here (ILD area)

CONFIDENTIAL 138


TiNSiON

SiO2


截面方向

NiSiNiSi

TiAlSiCu AlSiCu

AlSiCu

PE‐SiO2

Etch (Dry)：AlSiCu + Ti

PR


CONFIDENTIAL 139

NDL process node

Equipment

Recipe


Etch-PR(8"backend)

E11





CONFIDENTIAL 140


TiNSiON

SiO2


截面方向

NiSiNiSi

TiAlSiCu AlSiCu

AlSiCu

PE‐SiO2

Etch：PR remove

Metal AEI

CONFIDENTIAL 141

Top view ‐ FIB Cross section ‐ TEM

GateS/D

20 nm

AlCu

Oxford ox Ti

Si

NiSix

Appendix ‐ A• NDL fab Equipment Layout

142

Appendix ‐ B• Brief Lists of bulk FinFET recipes

143

1. FilmRecipe = W1KC20HA (Furnace)Recipe = Dr 80050A (Furnace)Recipe = SiON80020 (Furnace)Recipe = NDL‐bulkfinfet (HDP)Recipe = PESiO2 500Å (Oxford)Recipe = PESiO2 3000Å (Oxford)Recipe = TiN‐336C (ALD)Recipe = R1_TiN_15KW_W/O_BIAS_80 sec (PVD)Recipe = R1_Ni_1.5kw25sccmAr10sec (PVD)Recipe = F3_Ti_DC_64.2sec_5nm (PVD)

2. EtchRecipe = NDL_P.R_trimmming_R02_PM2Recipe = NDL_bulkfinfet_STI_PM2Recipe = NDL_bulkfinfet_OX_PM3Recipe = NDL_PR_removal_PM4Recipe = NDL_PR_strip_240s_PM1 Recipe = NDL_Metal_gate_TiN_R13_EP_PM2 Recipe = NDL_bulkfinfet_Al_metal_pad_PM2

3. AnnealRecipe = 8RTA800Recipe = 8RTA250Recipe = 8RTA400


144

Bulk FinFET Mask 檔名 : bulkfinfetPORV1

1. Zero mark : NDL_HCC_DCMARK_V2

2. Active (CAN負光阻) NDL_ yfhou‐bulkfinfetPORV1‐actCell 0Pad : layer : 43 dose 930/40/50/60/70/400 nm : layer : 51 dose 7.5

3. RT (正光阻) NDL_ yfhou‐bulkfinfetPORV1‐RTCell 0Pad : layer : 20 dose 120

4. Gate (負光阻)NDL_ yfhou‐bulkfinfetPORV1‐gate_NEBCell 0Pad : layer : 46 dose 1050/60/70/90/120/150/400 nm : layer : 11 dose 13NDL_ yfhou‐bulkfinfetPORV1‐gate (CAN負光阻, Poly gate)

4. RT (silicide) (正光阻) ‐ 55um x 55umNDL_ yfhou‐bulkfinfetPORV1‐silicideCell 0Pad : layer : 20 dose 120

5. Contact(正光阻) ‐ 5um x 5umNDL_ yfhou‐bulkfinfetPORV1‐contactCell 0Layer : 50 dose 140

6. Metal(負光阻) ‐ 60um x 60umNDL_ yfhou‐bulkfinfetPORV1‐metalCell 0Layer : 10 dose 8.5


145

3. EtchRecipe = NDL_P.R_trimmming_R02_PM2 (FEOL)


146

3. EtchRecipe = NDL_bulkfinfet_STI_PM2 (FEOL)


147

3. EtchRecipe = NDL_bulkfinfet_OX_PM3 (FEOL)


148

3. EtchRecipe = NDL_PR_removal_PM4 (FEOL)


149

3. EtchRecipe = NDL_bulkfinfet_OX_PM3 (BEOL)


150

3. EtchRecipe = NDL_PR_strip_240s_PM1 (BEOL)


151

3. EtchRecipe = NDL_Metal_gate_TiN_R13_EP_PM2 (BEOL)


152

3. EtchRecipe = NDL_bulkfinfet_Al_metal_pad_PM2 (BEOL)

Appendix ‐ C• Flow chart of process

153

Laser mark

Zero mark

P‐well implant

SiN HM deposition

Fin pattering

Si trench etching

Si trench filling

Fin etching back

SiO2 Gox deposition

TiN Metal gate deposition

Gate pattering

Source/Drain implant

RTA

Silicide area patterning

PVD Ni

Low temperature annealing

ILD deposition

Contact patterning

Ti/AlSiCu deposition

Metal1 patterning

總共7道光罩、77道步驟，製程時間約 2個月。

1 day

2 days

2 days

1 day

2 days

2 days

1 day

2 days

1 day

1 day

2 days

1 day

2 days

2 days

1 day

1 day

1 day

2 days

1 day

2 days

Appendix ‐ D• Run card of 20nm bulk FinFET

154


155


156

Appendix ‐ E• Process Engineers for assistance

157

1. Lithography

鄭旭君工程師 (#7644)

2. Etching

許倬綸工程師 (#7651)

3. Thin Film

劉思菁工程師 (#7661)

4. Integration

陳綉芝技術師 (#7694)

陳奕如工程師 (#7571)

陳旻政組長 (#7511)

Appendix ‐ F• Platform performance

158

NMOS PMOS

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