EE143 F2010 Lecture 22 Electrical Characteristics of MOS ...ee143/fa10/lectures/Lec_22.pdf ·...
Transcript of EE143 F2010 Lecture 22 Electrical Characteristics of MOS ...ee143/fa10/lectures/Lec_22.pdf ·...
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
1
Electrical Characteristics of MOS Devices
• The MOS Capacitor
– Voltage components
– Accumulation, Depletion, Inversion Modes
– Effect of channel bias and substrate bias
– Effect of gate oxide charges
– Threshold-voltage adjustment by implantation
– Capacitance vs. voltage characteristics
• MOS Field-Effect Transistor
– I-V characteristics
– Parameter extraction
“metal”
oxide
semiconductor
VG
+
xox
“metal”
oxide
semiconductor
VG
+
xox
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
2
2) Visit the Device Visualization Website
http://jas.eng.buffalo.edu/
and run the visualization experiments of
1) Charge carriers and Fermi level,
2) pn junctions
3) MOS capacitors
4) MOSFETs
1) Reading Assignment
Streetman: Section of Streetman Chap 8 on MOS
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
3
Work Function of Materials
Eo
EV
ECq
SEMICONDUCTOR
Ef
Eo
Ef
METAL
Work function
= q
Vacuum
energy level
qM is determined
by the metal material
qS is determined
by the semiconductor material,
the dopant type,
and doping concentration
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
4
Work Function (qM) of MOS Gate Materials
Eo = vacuum energy level Ef = Fermi level
EC = bottom of conduction band EV = top of conduction
band
Ef
Examples:
Al = 4.1 eV
TiSi2 = 4.6 eV
Ef
Eo
qM
Eo
qM
Ei
EC
EV
0.56eV
q = 4.15eV
0.56eV
q = 4.15eV (electron affinity)
Eo
Ei
EC
EV
0.56eV
q = 4.15eV
0.56eV
Ef
n+ poly-Si
(Ef = EC)p+ poly-Si
(Ef = EV)
qM
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
5
Work Function of doped Si substrate
q = 4.15eV
Ef
Eo
qs
Ei
EC
EV
|qF|
0.56eV
0.56eV
* Depends on substrate concentration NB
Ef
Eo
qs
Ei
EC
EV
|qF|
0.56eV
0.56eV
q = 4.15eV
n-type Si p-type Si
s (volts) = 4.15 +0.56 - |F| s (volts) = 4.15 +0.56 + |F|
i
BF
n
N
q
kTln
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
6
The MOS Capacitor
SioxFBG VVVV
ox
oxox
xC
[in Farads /cm2]
+_ VFB
Vox (depends on VG)
Vsi (depends on VG)
+
_
+
_
“metal”
oxide
semiconductor
VG
+
xox
Oxide capacitance/unit area
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
7
Flat Band Voltage
• VFB is the “built-in” voltage of the MOS:
• Gate work function M:
Al: 4.1 V; n+ poly-Si: 4.15 V; p+ poly-Si: 5.27 V
• Semiconductor work function S :
• Vox = voltage drop across oxide (depends on VG)
• VSi = voltage drop in the silicon (depends on VG)
SMFBV
s (volts) = 4.15 +0.56 - |F| for n-Si
s (volts) = 4.15 +0.56 + |F| for p-Si
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
8
A) Accumulation: VG < VFB for p-type substrate
VSi 0, so Vox = VG - VFB
QSi’ = charge/unit area in Si
=Cox (VG - VFB )
MOS Operation Modes
M O Si (p-Si)
Thickness of accumulation layer ~0
holes
Charge Distribution
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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MOS Operation Modes
• B) Flatband Condition : VG = VFB
No charge in Si (and hence no charge in metal gate)
• VSi = Vox = 0
M O S (p-Si)
Charge Distribution
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
10
C) Depletion: VG > VFB
MOS Operation Modes (cont.)
M O S (p-Si)
qNB
xd
s
2
dB
ox
dBFBG
2
xqN
C
xqNVV
(For given VG, can solve for xd)
B
SiSid
qN
V2x
VoxVSi
Depletion layer
Charge Distribution
Depletion
Layer
thickness
Note: NBxd is the total
charge in Si /unit area
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
11
x
x=0
Q'
Metal
(x)
Oxide
x=xo
x
xd
x=0
Q'
Metal Semiconductor
(x)
Oxide
x=xo
x=xo+
Q'-
x
xd
x=0
Q'
Metal Semiconductor
(x)
Oxide
x=xo
x=xo+
Semiconductor
Depletion Mode :Charge and Electric Field Distributions
by Superposition Principle of Electrostatics
x
xd
x=0
Metal SemiconductorE(x)
Oxide
x=xo
x=xo+
x
xd
x=0
Metal Semiconductor
E(x)
Oxide
x=xo
x=xo+
x
xd
x=0
Metal Semiconductor
E(x)
Oxide
x=xo
x=xo+
=+
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
12
D) Threshold of Inversion: VG = VT
nsurface = NB (for p-type substrate)
=> VSi = 2|F|
MOS Operation Modes (cont.)
M O S (p-Si)
qNB
xdmax
F
ox
BFs
FBTGC
qNVVV
2
22 )(
Q’n
This is a definition
for onset of
strong inversion
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
13
E) Strong Inversion: VG > VT
MOS Operation Modes (cont.)
M O S (p-Si)
qNa
xdmax
)(
max
TGoxn
ox
ndB
ox
VVCQ
C
QxqNV
B
FSi
dqN
x
4
max
Q’n
electrons
xdmax is approximately unchanged
when VG> VT
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
17
Accumulation
Depletion
Inversion
Vox = Qa/Cox
VSi ~ 0
Vox =qNaxd/Cox
VSi = qNaxd2/(2s)
Vox = [qNaxdmax+Qn]/Cox
VSi = qNaxdmax2/(2s)
= 2|F|
Voltage drop = area under E-field curve
* For simplicity, dielectric constants assumed to be same for oxide and Si in E-field sketches
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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Most derivations for MOS shown in lecture notes
are done with p-type substrate (NMOS)
as example.
Repeat the derivations yourself for n-type substrate
(PMOS) to test your understanding of MOS.
Suggested Exercise
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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VG
(more
positive)VFB VT
Accumulation
(holes) depletionstrong inversion
(electrons)
p-Si substrate (NMOS)
n-Si substrate (PMOS)
VG
(more
negative)VFBVT
Accumulation
(electrons)depletionStrong inversion
(holes)
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
25
C-V Characteristic
C/Cox
VT
1
VG
p-type
substrate
a
c
d
b
e
C/Cox
VT
1
VG
n-type
substrate
a
c
d
b
e
a) accumulation: Cox
b) flatband: ~Cox (actually a bit less)
c) depletion: Cox in series with the Cdepl
d) threshold: Cox in series with the minimum Cdepl
e) inversion: Cox (with some time delay!)
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
26
Accumulation
Depletion
Inversion
Q
Q
Q
Q
Q
Q
Low frequency High frequency
Q
Q
All frequencies
All frequencies
C = Cox
C = Cox 1/C = 1/Cox + xdmax/s
1/C = 1/Cox + xd/s
Small signal charge response Q due to VG
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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SioxFBBG VVVVV
net bias across MOS
M
O
p-Si
V
VG
C
inversion
electrons
depletion
region
VB
n+n+
Effect of Substrate Bias VB and Channel Bias VC
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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s
da
OX
daFBBG
BCpSi
XqN
C
XqNVVV
VVV
max2
max
2
1
2
M O SiEi
Efs
q(VC-VB)
Efn
pq
pq
s
daSi
XqNV
max2
2
1
At the onset of strong inversion, where VG is defined
as the threshold voltage
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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At threshold: VG – VB = VFB+Vox+VSi
But VSi = 2|p| + (VC - VB ) =>
xdmax is different from no-bias case
B
SiSid
qN
Vx
2max
VT -VB = VFB + 2sqNB(2|F| + VC-VB)
Cox + 2|F| + VC - VB
VoxVSi
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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Flat Band Voltage with Oxide charges
VFB is the Gate voltage required to create no charge in the Si
dxx
xx
CC
QV
oxx
ox
ox
oxox
f
SMFB 0
)(1
x = 0 x = xox
M O S
ox (x)Qf
ox (x) due to alkaline
contaminants or trapped
chargeQf due to broken bonds
at
Si-SiO interface
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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VT Tailoring with Ion Implantation
Nsub
Shallow implanted
dopant profile at Si-SiO2
interface (approximated as
a delta function)
• Acceptor implant gives positive shift (+ VT)
• Donor implant gives negative shift - VT
Algebraic sign of VT shift is independent of n or p substrate !
OX
iT
C
QV
Qi = q implant dose in Si
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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p-Si
implanted acceptors
Na
SiO2
Doping Profile After Implantation
SiO2
xdmax
Q
Qd
d
Qn
p-Si
(due to implanted acceptors)
Charge Distribution for V G > VT
* Valid if thickness of implanted dopants << xdmax
The VT shift can be viewed as the extra gate voltage needed to
deplete the implanted dopants ~ Qi/Cox
The delta-function approximation of implanted profile
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
33
Summary : Parameters Affecting VT
6
7
n+
Na
VB
5
1
2
4
3
Dopant implant near Si/SiO2 interface
fOX Q& M
xox
VCQn n+
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
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+ Qf or Qox
B threshold implant
As or P threshold implant
Xox increases
Xox increases
M increases
M decreases
|VCB| increases
|VCB| increases
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
35
Summary of MOS Threshold Voltage (NMOS, p-substrate)
• Threshold voltage of MOS capacitor:
• Threshold voltage of MOS transistor:
Note 1: At the onset of strong inversion, inversion charge is negligible
and is often ignored in the VT expression
Note 2: VT of a MOSFET is taken as the VT value at source ( i.e., VC =VS)
Note 3 : Qi = (q implant dose ) is the charge due to the ionized donors
or acceptors implanted at the Si surface. Qi is negative for acceptors
and is positive for donors
VT = VFB + 2sqNB(2|F|)
Cox + 2|F| -
Qi
Cox
VT = VFB + 2sqNB(2|F| + |VC-VB|)
Cox + 2|F| + VC -
Qi
Cox
Professor N Cheung, U.C. Berkeley
Lecture 22EE143 F2010
36
Summary of MOS Threshold Voltage (PMOS, n-substrate)
• Threshold voltage of MOS capacitor:
• Threshold voltage of MOS transistor:
* Yes, + sign for VC term but VC (<0) is a negative bias for PMOS because the
inversion holes have to be negatively biased with respect to the n-substrate
to create a reverse biased pn junction.
VT = VFB - 2sqNB(2|F|)
Cox - 2|F| -
Qi
Cox
VT = VFB - 2sqNB(2|F| + |VC-VB|)
Cox - 2|F| + VC -
Qi
Cox